The GRM155R71C104KA88D is a high-performance multilayer ceramic capacitor (MLCC) manufactured by Murata.
The LL4148 is a widely used small signal switching diode featuring a SOD-80 package.
The MMBT2222A is an NPN small signal transistor housed in a compact SOT-23 package.
The LMS7002M is a highly flexible, fully integrated RF transceiver chip designed for multi-band, multi-standard wireless communication.
The USB3320C-EZK-TR, developed by Microchip, is a high-performance USB 2.0 ULPI transceiver (PHY) that complies with USB 2.0 OTG as well as host/device standards.
The ATTINY4-TSHR is a low-power 8-bit microcontroller built on Atmel’s enhanced AVR® RISC architecture.
The 1N4148WS is a high-speed small-signal switching diode in an SOD-323 package, featuring low leakage current, fast switching speed, and high reverse voltage tolerance.
The MC78L05ACHT1G is a compact and cost-effective positive voltage regulator. It belongs to the MC78L00A series, which is widely used in applications requiring a low-power regulated supply.
The RWR80S2000FRB12 is a rugged, high-precision wirewound resistor for tough environments.
In high-efficiency power supplies and high-speed switching circuits, the performance of rectifier diodes is crucial.
The ESDA14V2L is a diode array specifically for Electrostatic Discharge (ESD) protection, capable of safeguarding one or two signal lines from transient voltage spikes.
The MBRS130LT3G is a Schottky power rectifier that uses the Schottky Barrier principle with a large-area metal-to-silicon junction for efficient performance.
The TPS3823-33DBVR is a highly reliable voltage supervisor for DSP and processor-based systems.
The SN74LVC1G14DCKR is a single Schmitt-trigger inverter.
The FDS4435BZ is a P-Channel MOSFET built with Fairchild Semiconductor’s PowerTrench® technology, designed to keep on-state resistance as low as possible.
The RB521S30T1G is a Schottky barrier diode for high-speed switching, circuit protection, and voltage clamping applications.
The BSS84 is a P-channel enhancement-mode MOSFET manufactured using proprietary high-density DMOS technology.
The MJE13003 is a high-voltage, high-speed NPN power transistor specifically for power switching applications that involve inductive loads.
