페이지 6 - Fairchild/ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FDMD8280	Fairchild/ON Semiconductor	MOSFET 2N-CH 80V 11A 6-MLP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 40V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-Power3.3x5	패키지: 12-PowerWDFN	재고5,856	Standard	80V	11A	8.2 mOhm @ 11A, 10V	4V @ 250µA	44nC @ 10V	3050pF @ 40V	1W	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWDFN	12-Power3.3x5
FDMD8240LET40	Fairchild/ON Semiconductor	MOSFET 2N-CH 40V 24A POWER3.3X5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-Power3.3x5	패키지: 12-PowerWDFN	재고3,376	Standard	40V	24A	2.6 mOhm @ 23A, 10V	3V @ 250µA	56nC @ 10V	4230pF @ 20V	50W	-55°C ~ 175°C (TJ)	Surface Mount	12-PowerWDFN	12-Power3.3x5
FDMS3604AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/23A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 23A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고42,996	Logic Level Gate	30V	13A, 23A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1695pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDMS8095AC	Fairchild/ON Semiconductor	MOSFET N/P-CH 150V 6.2A/1A PWR56 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 6.2A, 1A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 75V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	패키지: 8-PowerWDFN	재고6,080	Standard	150V	6.2A, 1A	30 mOhm @ 6.2A, 10V	4V @ 250µA	30nC @ 10V	2020pF @ 75V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
FDMQ8403	Fairchild/ON Semiconductor	MOSFET 4N-CH 100V 3.1A 12-MLP FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-WDFN Exposed Pad Supplier Device Package: 12-MLP (5x4.5)	패키지: 12-WDFN Exposed Pad	재고7,088	Standard	100V	3.1A	110 mOhm @ 3A, 10V	4V @ 250µA	5nC @ 10V	215pF @ 15V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	12-WDFN Exposed Pad	12-MLP (5x4.5)
FDPC8014AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 20A/40A FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A, 40A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	패키지: 8-PowerWDFN	재고5,856	Standard	25V	20A, 40A	3.8 mOhm @ 20A, 10V	2.5V @ 250µA	35nC @ 10V	2375pF @ 13V	2.1W, 2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power Clip 56
FDMD8240L	Fairchild/ON Semiconductor	MOSFET 2N-CH 40V 23A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-Power3.3x5	패키지: 12-PowerWDFN	재고5,904	Standard	40V	23A	2.6 mOhm @ 23A, 10V	3V @ 250µA	56nC @ 10V	4230pF @ 20V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWDFN	12-Power3.3x5
FDMQ86530L	Fairchild/ON Semiconductor	MOSFET 4N-CH 60V 8A MLP4.5X5 FET Type: 4 N-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-WDFN Exposed Pad Supplier Device Package: 12-MLP (5x4.5)	패키지: 12-WDFN Exposed Pad	재고6,960	Logic Level Gate	60V	8A	17.5 mOhm @ 8A, 10V	3V @ 250µA	33nC @ 10V	2295pF @ 30V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	12-WDFN Exposed Pad	12-MLP (5x4.5)
FDPC8014S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 8PWRCLIP FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A, 41A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	패키지: 8-PowerWDFN	재고3,456	Logic Level Gate	25V	20A, 41A	3.8 mOhm @ 20A, 10V	2.5V @ 250µA	35nC @ 10V	2375pF @ 13V	2.1W, 2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power Clip 56
FDMS7700S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/22A POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 22A Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	패키지: 8-PowerWDFN	재고39,252	Logic Level Gate	30V	12A, 22A	7.5 mOhm @ 12A, 10V	3V @ 250µA	28nC @ 10V	1750pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
FDPC5018SG	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V PWRCLIP56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 32A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Power - Max: 1W, 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	패키지: 8-PowerWDFN	재고6,976	Standard	30V	17A, 32A	5 mOhm @ 17A, 10V	3V @ 250µA	24nC @ 10V	1715pF @ 15V	1W, 1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power Clip 56
FDMS3606AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/27A PWR56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 27A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고6,224	Logic Level Gate	30V	13A, 27A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1695pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDMD82100L	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 7A 6-MLP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 50V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-Power3.3x5	패키지: 12-PowerWDFN	재고6,720	Logic Level Gate	100V	7A	19.5 mOhm @ 7A, 10V	3V @ 250µA	24nC @ 10V	1585pF @ 50V	1W	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWDFN	12-Power3.3x5
FDPC5030SG	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V PWRCLIP56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 25A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Power - Max: 1W, 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	패키지: 8-PowerWDFN	재고7,216	Standard	30V	17A, 25A	5 mOhm @ 17A, 10V	3V @ 250µA	24nC @ 10V	1715pF @ 15V	1W, 1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power Clip 56
FDPC8016S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 8PWRCLIP FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A, 35A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	패키지: 8-PowerWDFN	재고4,160	Logic Level Gate	25V	20A, 35A	3.8 mOhm @ 20A, 10V	2.5V @ 250µA	35nC @ 10V	2375pF @ 13V	2.1W, 2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power Clip 56
FDMS7600AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/22A POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 22A Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	패키지: 8-PowerWDFN	재고366,120	Logic Level Gate	30V	12A, 22A	7.5 mOhm @ 12A, 10V	3V @ 250µA	28nC @ 10V	1750pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
FDMD8900	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V POWER FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 17A Rds On (Max) @ Id, Vgs: 4 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 15V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-Power3.3x5	패키지: 12-PowerWDFN	재고3,568	Standard	30V	19A, 17A	4 mOhm @ 19A, 10V	2.5V @ 250µA	35nC @ 10V	2605pF @ 15V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWDFN	12-Power3.3x5
FDMS3668S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/18A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 18A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고62,028	Logic Level Gate	30V	13A, 18A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1765pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDMC8097AC	Fairchild/ON Semiconductor	MOSFET N/P-CH 150V FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: 8-PowerWDFN	재고2,240	Standard	150V	2.4A (Ta), 900mA (Tc)	155 mOhm @ 2.4A, 10V	4V @ 250µA	6.2nC @ 10V	395pF @ 75V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
FDMS3600AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 15A/30A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 30A Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V Power - Max: 2.2W, 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고16,176	Logic Level Gate	25V	15A, 30A	5.6 mOhm @ 15A, 10V	2.7V @ 250µA	27nC @ 10V	1770pF @ 13V	2.2W, 2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDS6912	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고11,024,736	Logic Level Gate	30V	6A	28 mOhm @ 6A, 10V	3V @ 250µA	10nC @ 5V	740pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDML7610S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/17A 8-MLP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 17A Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Power - Max: 800mW, 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-MLP (3x4.5)	패키지: 8-PowerWDFN	재고72,312	Logic Level Gate	30V	12A, 17A	7.5 mOhm @ 12A, 10V	3V @ 250µA	28nC @ 10V	1750pF @ 15V	800mW, 900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-MLP (3x4.5)
FDS6890A	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고56,208	Logic Level Gate	20V	7.5A	18 mOhm @ 7.5A, 4.5V	1.5V @ 250µA	32nC @ 4.5V	2130pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3602AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 15A/26A POWER56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 26A Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V Power - Max: 2.2W, 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고48,240	Logic Level Gate	25V	15A, 26A	5.6 mOhm @ 15A, 10V	3V @ 250µA	27nC @ 10V	1770pF @ 13V	2.2W, 2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDMS3606S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/27A PWR56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 27A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고15,516	Logic Level Gate	30V	13A, 27A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1785pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDSS2407	Fairchild/ON Semiconductor	MOSFET 2N-CH 62V 3.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 62V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Power - Max: 2.27W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,896	Logic Level Gate	62V	3.3A	110 mOhm @ 3.3A, 10V	3V @ 250µA	4.3nC @ 5V	300pF @ 15V	2.27W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3615S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 16A/18A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A, 18A Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 13V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고7,296	Logic Level Gate	25V	16A, 18A	5.8 mOhm @ 16A, 10V	2.5V @ 250µA	27nC @ 10V	1765pF @ 13V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDMS3622S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 17.5A/34A PWR56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A, 34A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고7,520	Logic Level Gate	25V	17.5A, 34A	5 mOhm @ 17.5A, 10V	2V @ 250µA	26nC @ 10V	1570pF @ 13V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56

FDMD8280

Fairchild/ON Semiconductor

MOSFET 2N-CH 80V 11A 6-MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 40V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Supplier Device Package: 12-Power3.3x5

패키지: 12-PowerWDFN

재고5,856

Standard

80V

11A

8.2 mOhm @ 11A, 10V

4V @ 250µA

44nC @ 10V

3050pF @ 40V

1W

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWDFN

12-Power3.3x5

FDMD8240LET40

Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 24A POWER3.3X5

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24A
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Supplier Device Package: 12-Power3.3x5

패키지: 12-PowerWDFN

재고3,376

Standard

40V

24A

2.6 mOhm @ 23A, 10V

3V @ 250µA

56nC @ 10V

4230pF @ 20V

50W

-55°C ~ 175°C (TJ)

Surface Mount

12-PowerWDFN

12-Power3.3x5

FDMS3604AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/23A 8-PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고42,996

Logic Level Gate

30V

13A, 23A

8 mOhm @ 13A, 10V

2.7V @ 250µA

29nC @ 10V

1695pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDMS8095AC

Fairchild/ON Semiconductor

MOSFET N/P-CH 150V 6.2A/1A PWR56

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 1A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 75V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

패키지: 8-PowerWDFN

재고6,080

Standard

150V

6.2A, 1A

30 mOhm @ 6.2A, 10V

4V @ 250µA

30nC @ 10V

2020pF @ 75V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

FDMQ8403

Fairchild/ON Semiconductor

MOSFET 4N-CH 100V 3.1A 12-MLP

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-WDFN Exposed Pad
Supplier Device Package: 12-MLP (5x4.5)

패키지: 12-WDFN Exposed Pad

재고7,088

Standard

100V

3.1A

110 mOhm @ 3A, 10V

4V @ 250µA

5nC @ 10V

215pF @ 15V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

12-WDFN Exposed Pad

12-MLP (5x4.5)

FDPC8014AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 20A/40A

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A, 40A
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V
Power - Max: 2.1W, 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power Clip 56

패키지: 8-PowerWDFN

재고5,856

Standard

25V

20A, 40A

3.8 mOhm @ 20A, 10V

2.5V @ 250µA

35nC @ 10V

2375pF @ 13V

2.1W, 2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power Clip 56

FDMD8240L

Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 23A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Supplier Device Package: 12-Power3.3x5

패키지: 12-PowerWDFN

재고5,904

Standard

40V

23A

2.6 mOhm @ 23A, 10V

3V @ 250µA

56nC @ 10V

4230pF @ 20V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWDFN

12-Power3.3x5

FDMQ86530L

Fairchild/ON Semiconductor

MOSFET 4N-CH 60V 8A MLP4.5X5

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-WDFN Exposed Pad
Supplier Device Package: 12-MLP (5x4.5)

패키지: 12-WDFN Exposed Pad

재고6,960

Logic Level Gate

60V

8A

17.5 mOhm @ 8A, 10V

3V @ 250µA

33nC @ 10V

2295pF @ 30V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

12-WDFN Exposed Pad

12-MLP (5x4.5)

FDPC8014S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 8PWRCLIP

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A, 41A
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V
Power - Max: 2.1W, 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power Clip 56

패키지: 8-PowerWDFN

재고3,456

Logic Level Gate

25V

20A, 41A

3.8 mOhm @ 20A, 10V

2.5V @ 250µA

35nC @ 10V

2375pF @ 13V

2.1W, 2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power Clip 56

FDMS7700S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/22A POWER56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 22A
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

패키지: 8-PowerWDFN

재고39,252

Logic Level Gate

30V

12A, 22A

7.5 mOhm @ 12A, 10V

3V @ 250µA

28nC @ 10V

1750pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

FDPC5018SG

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V PWRCLIP56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Power - Max: 1W, 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power Clip 56

패키지: 8-PowerWDFN

재고6,976

Standard

30V

17A, 32A

5 mOhm @ 17A, 10V

3V @ 250µA

24nC @ 10V

1715pF @ 15V

1W, 1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power Clip 56

FDMS3606AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/27A PWR56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고6,224

Logic Level Gate

30V

13A, 27A

8 mOhm @ 13A, 10V

2.7V @ 250µA

29nC @ 10V

1695pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDMD82100L

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 7A 6-MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 50V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Supplier Device Package: 12-Power3.3x5

패키지: 12-PowerWDFN

재고6,720

Logic Level Gate

100V

7A

19.5 mOhm @ 7A, 10V

3V @ 250µA

24nC @ 10V

1585pF @ 50V

1W

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWDFN

12-Power3.3x5

FDPC5030SG

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V PWRCLIP56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 25A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Power - Max: 1W, 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power Clip 56

패키지: 8-PowerWDFN

재고7,216

Standard

30V

17A, 25A

5 mOhm @ 17A, 10V

3V @ 250µA

24nC @ 10V

1715pF @ 15V

1W, 1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power Clip 56

FDPC8016S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 8PWRCLIP

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A, 35A
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V
Power - Max: 2.1W, 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power Clip 56

패키지: 8-PowerWDFN

재고4,160

Logic Level Gate

25V

20A, 35A

3.8 mOhm @ 20A, 10V

2.5V @ 250µA

35nC @ 10V

2375pF @ 13V

2.1W, 2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power Clip 56

FDMS7600AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/22A POWER56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 22A
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

패키지: 8-PowerWDFN

재고366,120

Logic Level Gate

30V

12A, 22A

7.5 mOhm @ 12A, 10V

3V @ 250µA

28nC @ 10V

1750pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

FDMD8900

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V POWER

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 17A
Rds On (Max) @ Id, Vgs: 4 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 15V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Supplier Device Package: 12-Power3.3x5

패키지: 12-PowerWDFN

재고3,568

Standard

30V

19A, 17A

4 mOhm @ 19A, 10V

2.5V @ 250µA

35nC @ 10V

2605pF @ 15V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWDFN

12-Power3.3x5

FDMS3668S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/18A 8-PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고62,028

Logic Level Gate

30V

13A, 18A

8 mOhm @ 13A, 10V

2.7V @ 250µA

29nC @ 10V

1765pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDMC8097AC

Fairchild/ON Semiconductor

MOSFET N/P-CH 150V

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: 8-PowerWDFN

재고2,240

Standard

150V

2.4A (Ta), 900mA (Tc)

155 mOhm @ 2.4A, 10V

4V @ 250µA

6.2nC @ 10V

395pF @ 75V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

FDMS3600AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 15A/30A 8-PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 30A
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V
Power - Max: 2.2W, 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고16,176

Logic Level Gate

25V

15A, 30A

5.6 mOhm @ 15A, 10V

2.7V @ 250µA

27nC @ 10V

1770pF @ 13V

2.2W, 2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDS6912

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고11,024,736

Logic Level Gate

30V

6A

28 mOhm @ 6A, 10V

3V @ 250µA

10nC @ 5V

740pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDML7610S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/17A 8-MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Power - Max: 800mW, 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP (3x4.5)

패키지: 8-PowerWDFN

재고72,312

Logic Level Gate

30V

12A, 17A

7.5 mOhm @ 12A, 10V

3V @ 250µA

28nC @ 10V

1750pF @ 15V

800mW, 900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-MLP (3x4.5)

FDS6890A

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고56,208

Logic Level Gate

20V

7.5A

18 mOhm @ 7.5A, 4.5V

1.5V @ 250µA

32nC @ 4.5V

2130pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS3602AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 15A/26A POWER56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 26A
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V
Power - Max: 2.2W, 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고48,240

Logic Level Gate

25V

15A, 26A

5.6 mOhm @ 15A, 10V

3V @ 250µA

27nC @ 10V

1770pF @ 13V

2.2W, 2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDMS3606S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/27A PWR56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고15,516

Logic Level Gate

30V

13A, 27A

8 mOhm @ 13A, 10V

2.7V @ 250µA

29nC @ 10V

1785pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDSS2407

Fairchild/ON Semiconductor

MOSFET 2N-CH 62V 3.3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 62V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Power - Max: 2.27W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,896

Logic Level Gate

62V

3.3A

110 mOhm @ 3.3A, 10V

3V @ 250µA

4.3nC @ 5V

300pF @ 15V

2.27W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS3615S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 16A/18A 8-PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A, 18A
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 13V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고7,296

Logic Level Gate

25V

16A, 18A

5.8 mOhm @ 16A, 10V

2.5V @ 250µA

27nC @ 10V

1765pF @ 13V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDMS3622S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 17.5A/34A PWR56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 34A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고7,520

Logic Level Gate

25V

17.5A, 34A

5 mOhm @ 17.5A, 10V

2V @ 250µA

26nC @ 10V

1570pF @ 13V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56