페이지 7 - Fairchild/ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FDMS3686S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/23A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 23A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고6,656	Logic Level Gate	30V	13A, 23A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1785pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDS8960C	Fairchild/ON Semiconductor	MOSFET N/P-CH 35V 7A/5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 7A, 5A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고16,800	Logic Level Gate	35V	7A, 5A	24 mOhm @ 7A, 10V	3V @ 250µA	7.7nC @ 5V	570pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3620S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 17.5A/38A 8PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A, 38A Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고46,656	Logic Level Gate	25V	17.5A, 38A	4.7 mOhm @ 17.5A, 10V	2V @ 250µA	26nC @ 10V	1570pF @ 13V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDS6911	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 13 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,168	Logic Level Gate	20V	7.5A	13 mOhm @ 7.5A, 10V	3V @ 250µA	24nC @ 10V	1130pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDG1024NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 1.2A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A Rds On (Max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고758,196	Logic Level Gate	20V	1.2A	175 mOhm @ 1.2A, 4.5V	1V @ 250µA	2.6nC @ 4.5V	150pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
FDY3000NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 0.6A SC89 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고160,128	Logic Level Gate	20V	600mA	700 mOhm @ 600mA, 4.5V	1.3V @ 250µA	1.1nC @ 4.5V	60pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
FDG6303N	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 0.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고1,975,920	Logic Level Gate	25V	500mA	450 mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V	50pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
FDMS8090	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 10A PWR56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	패키지: 8-PowerWDFN	재고7,376	Logic Level Gate	100V	10A	13 mOhm @ 10A, 10V	4V @ 250µA	27nC @ 10V	1800pF @ 50V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
FDMS9600S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/16A POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	패키지: 8-PowerWDFN	재고255,684	Logic Level Gate	30V	12A, 16A	8.5 mOhm @ 12A, 10V	3V @ 250µA	13nC @ 4.5V	1705pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
FDS4559_F085	Fairchild/ON Semiconductor	MOSFET N/P-CH 60V 4.5A/3.5A 8-SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,416	Logic Level Gate	60V	4.5A, 3.5A	55 mOhm @ 4.5A, 10V	3V @ 250µA	18nC @ 10V	650pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FQS4903TF	Fairchild/ON Semiconductor	MOSFET 2N-CH 500V 0.37A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 370mA Rds On (Max) @ Id, Vgs: 6.2 Ohm @ 185mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고20,040	Standard	500V	370mA	6.2 Ohm @ 185mA, 10V	4V @ 250µA	8.2nC @ 10V	200pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS7602S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/17A POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 17A Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	패키지: 8-PowerWDFN	재고674,016	Logic Level Gate	30V	12A, 17A	7.5 mOhm @ 12A, 10V	3V @ 250µA	28nC @ 10V	1750pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
FDMA3027PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 3.3A MICRO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 87 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	패키지: 6-VDFN Exposed Pad	재고7,856	Logic Level Gate	30V	3.3A	87 mOhm @ 3.3A, 10V	3V @ 250µA	10nC @ 10V	435pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
FDS6986AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고983,376	Logic Level Gate	30V	6.5A, 7.9A	29 mOhm @ 6.5A, 10V	3V @ 250µA	17nC @ 10V	720pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3664S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/25A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 25A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고2,141,112	Logic Level Gate	30V	13A, 25A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1765pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDZ1905PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 6-WLCSP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 126 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, WLCSP Supplier Device Package: 6-WLCSP	패키지: 6-UFBGA, WLCSP	재고6,560	Logic Level Gate	-	-	126 mOhm @ 1A, 4.5V	1V @ 250µA	-	-	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFBGA, WLCSP	6-WLCSP
FDS4897AC	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 6.1A/5.2A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고12,828	Logic Level Gate	40V	6.1A, 5.2A	26 mOhm @ 6.1A, 10V	3V @ 250µA	21nC @ 10V	1055pF @ 20V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS6912A	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고548,340	Logic Level Gate	30V	6A	28 mOhm @ 6A, 10V	3V @ 250µA	8.1nC @ 5V	575pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2N7002DW	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 0.115A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고2,247,348	Logic Level Gate	60V	115mA	7.5 Ohm @ 50mA, 5V	2V @ 250µA	-	50pF @ 25V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
FPF1C2P5BF07A	Fairchild/ON Semiconductor	MOSFET 5N-CH 650V 36A F1 MODULE FET Type: 5 N-Channel (Solar Inverter) FET Feature: Standard Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 90 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: F1 Module Supplier Device Package: F1	패키지: F1 Module	재고6,888	Standard	650V	36A	90 mOhm @ 27A, 10V	3.8V @ 250µA	-	-	250W	-40°C ~ 150°C (TJ)	Chassis Mount	F1 Module	F1
FDMD8540L	Fairchild/ON Semiconductor	MOSFET 2N-CH 40V 33A POWER FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 33A, 156A Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7940pF @ 20V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	패키지: 8-PowerWDFN	재고5,632	Standard	40V	33A, 156A	1.5 mOhm @ 33A, 10V	3V @ 250µA	113nC @ 10V	7940pF @ 20V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6
FDMD8260LET60	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 15A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V Power - Max: 1.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-Power3.3x5	패키지: 12-PowerWDFN	재고4,864	Standard	60V	15A	5.8 mOhm @ 15A, 10V	3V @ 250µA	68nC @ 10V	5245pF @ 30V	1.1W	-55°C ~ 175°C (TJ)	Surface Mount	12-PowerWDFN	12-Power3.3x5
FDMD8560L	Fairchild/ON Semiconductor	MOSFET 2N-CH 46V 22A POWER FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A, 93A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	패키지: 8-PowerWDFN	재고5,984	Standard	60V	22A, 93A	3.2 mOhm @ 22A, 10V	3V @ 250µA	128nC @ 10V	11130pF @ 30V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6
FDPC4044	Fairchild/ON Semiconductor	MOSFET 2N-CH 8MLP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Powerclip-33	패키지: 8-PowerWDFN	재고5,904	Logic Level Gate	-	-	4.3 mOhm @ 27A, 10V	3V @ 250µA	49nC @ 10V	3215pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Powerclip-33
FDMD8580	Fairchild/ON Semiconductor	MOSFET 80V 16A POWER 5X6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 40V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	패키지: 8-PowerWDFN	재고6,496	Standard	80V	16A (Ta), 82A (Tc)	4.6 mOhm @ 16A, 10V	4.5V @ 250µA	80nC @ 10V	5875pF @ 40V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6
FDMD8260L	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 6-MLP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-Power3.3x5	패키지: 12-PowerWDFN	재고7,616	Standard	60V	15A	5.8 mOhm @ 15A, 10V	3V @ 250µA	68nC @ 10V	5245pF @ 30V	1W	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWDFN	12-Power3.3x5
FDMD82100	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 7A 12POWER FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 19 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-Power3.3x5	패키지: 12-PowerWDFN	재고2,688	Standard	100V	7A	19 mOhm @ 7A, 10V	4V @ 250µA	17nC @ 10V	1070pF @ 50V	1W	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWDFN	12-Power3.3x5
FDMD86100	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V FET Type: 2 N-Channel (Dual) Common Source FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	패키지: 8-PowerWDFN	재고6,240	Standard	100V	10A	10.5 mOhm @ 10A, 10V	4V @ 250µA	30nC @ 10V	2060pF @ 50V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6

FDMS3686S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/23A 8-PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고6,656

Logic Level Gate

30V

13A, 23A

8 mOhm @ 13A, 10V

2.7V @ 250µA

29nC @ 10V

1785pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDS8960C

Fairchild/ON Semiconductor

MOSFET N/P-CH 35V 7A/5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 7A, 5A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고16,800

Logic Level Gate

35V

7A, 5A

24 mOhm @ 7A, 10V

3V @ 250µA

7.7nC @ 5V

570pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS3620S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 17.5A/38A 8PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 38A
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고46,656

Logic Level Gate

25V

17.5A, 38A

4.7 mOhm @ 17.5A, 10V

2V @ 250µA

26nC @ 10V

1570pF @ 13V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDS6911

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 13 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,168

Logic Level Gate

20V

7.5A

13 mOhm @ 7.5A, 10V

3V @ 250µA

24nC @ 10V

1130pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDG1024NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 1.2A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Rds On (Max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고758,196

Logic Level Gate

20V

1.2A

175 mOhm @ 1.2A, 4.5V

1V @ 250µA

2.6nC @ 4.5V

150pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

FDY3000NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 0.6A SC89

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Power - Max: 446mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고160,128

Logic Level Gate

20V

600mA

700 mOhm @ 600mA, 4.5V

1.3V @ 250µA

1.1nC @ 4.5V

60pF @ 10V

446mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

FDG6303N

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.5A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고1,975,920

Logic Level Gate

25V

500mA

450 mOhm @ 500mA, 4.5V

1.5V @ 250µA

2.3nC @ 4.5V

50pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

FDMS8090

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 10A PWR56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Power - Max: 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

패키지: 8-PowerWDFN

재고7,376

Logic Level Gate

100V

10A

13 mOhm @ 10A, 10V

4V @ 250µA

27nC @ 10V

1800pF @ 50V

2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

FDMS9600S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/16A POWER56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

패키지: 8-PowerWDFN

재고255,684

Logic Level Gate

30V

12A, 16A

8.5 mOhm @ 12A, 10V

3V @ 250µA

13nC @ 4.5V

1705pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

FDS4559_F085

Fairchild/ON Semiconductor

MOSFET N/P-CH 60V 4.5A/3.5A 8-SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,416

Logic Level Gate

60V

4.5A, 3.5A

55 mOhm @ 4.5A, 10V

3V @ 250µA

18nC @ 10V

650pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FQS4903TF

Fairchild/ON Semiconductor

MOSFET 2N-CH 500V 0.37A 8SOP

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 370mA
Rds On (Max) @ Id, Vgs: 6.2 Ohm @ 185mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고20,040

Standard

500V

370mA

6.2 Ohm @ 185mA, 10V

4V @ 250µA

8.2nC @ 10V

200pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS7602S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/17A POWER56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

패키지: 8-PowerWDFN

재고674,016

Logic Level Gate

30V

12A, 17A

7.5 mOhm @ 12A, 10V

3V @ 250µA

28nC @ 10V

1750pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

FDMA3027PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 3.3A MICRO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Rds On (Max) @ Id, Vgs: 87 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

패키지: 6-VDFN Exposed Pad

재고7,856

Logic Level Gate

30V

3.3A

87 mOhm @ 3.3A, 10V

3V @ 250µA

10nC @ 10V

435pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

FDS6986AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고983,376

Logic Level Gate

30V

6.5A, 7.9A

29 mOhm @ 6.5A, 10V

3V @ 250µA

17nC @ 10V

720pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS3664S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/25A 8-PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고2,141,112

Logic Level Gate

30V

13A, 25A

8 mOhm @ 13A, 10V

2.7V @ 250µA

29nC @ 10V

1765pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDZ1905PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 6-WLCSP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 126 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Supplier Device Package: 6-WLCSP

패키지: 6-UFBGA, WLCSP

재고6,560

Logic Level Gate

-

126 mOhm @ 1A, 4.5V

1V @ 250µA

-

900mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFBGA, WLCSP

6-WLCSP

FDS4897AC

Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 6.1A/5.2A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A
Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고12,828

Logic Level Gate

40V

6.1A, 5.2A

26 mOhm @ 6.1A, 10V

3V @ 250µA

21nC @ 10V

1055pF @ 20V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS6912A

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고548,340

Logic Level Gate

30V

6A

28 mOhm @ 6A, 10V

3V @ 250µA

8.1nC @ 5V

575pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

2N7002DW

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 0.115A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고2,247,348

Logic Level Gate

60V

115mA

7.5 Ohm @ 50mA, 5V

2V @ 250µA

-

50pF @ 25V

200mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

FPF1C2P5BF07A

Fairchild/ON Semiconductor

MOSFET 5N-CH 650V 36A F1 MODULE

FET Type: 5 N-Channel (Solar Inverter)
FET Feature: Standard
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: F1 Module
Supplier Device Package: F1

패키지: F1 Module

재고6,888

Standard

650V

36A

90 mOhm @ 27A, 10V

3.8V @ 250µA

-

250W

-40°C ~ 150°C (TJ)

Chassis Mount

F1 Module

F1

FDMD8540L

Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 33A POWER

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 33A, 156A
Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7940pF @ 20V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power 5x6

패키지: 8-PowerWDFN

재고5,632

Standard

40V

33A, 156A

1.5 mOhm @ 33A, 10V

3V @ 250µA

113nC @ 10V

7940pF @ 20V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power 5x6

FDMD8260LET60

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 15A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Supplier Device Package: 12-Power3.3x5

패키지: 12-PowerWDFN

재고4,864

Standard

60V

15A

5.8 mOhm @ 15A, 10V

3V @ 250µA

68nC @ 10V

5245pF @ 30V

1.1W

-55°C ~ 175°C (TJ)

Surface Mount

12-PowerWDFN

12-Power3.3x5

FDMD8560L

Fairchild/ON Semiconductor

MOSFET 2N-CH 46V 22A POWER

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A, 93A
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V
Power - Max: 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power 5x6

패키지: 8-PowerWDFN

재고5,984

Standard

60V

22A, 93A

3.2 mOhm @ 22A, 10V

3V @ 250µA

128nC @ 10V

11130pF @ 30V

2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power 5x6

FDPC4044

Fairchild/ON Semiconductor

MOSFET 2N-CH 8MLP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Powerclip-33

패키지: 8-PowerWDFN

재고5,904

Logic Level Gate

-

4.3 mOhm @ 27A, 10V

3V @ 250µA

49nC @ 10V

3215pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Powerclip-33

FDMD8580

Fairchild/ON Semiconductor

MOSFET 80V 16A POWER 5X6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 40V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power 5x6

패키지: 8-PowerWDFN

재고6,496

Standard

80V

16A (Ta), 82A (Tc)

4.6 mOhm @ 16A, 10V

4.5V @ 250µA

80nC @ 10V

5875pF @ 40V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power 5x6

FDMD8260L

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 6-MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Supplier Device Package: 12-Power3.3x5

패키지: 12-PowerWDFN

재고7,616

Standard

60V

15A

5.8 mOhm @ 15A, 10V

3V @ 250µA

68nC @ 10V

5245pF @ 30V

1W

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWDFN

12-Power3.3x5

FDMD82100

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 7A 12POWER

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Supplier Device Package: 12-Power3.3x5

패키지: 12-PowerWDFN

재고2,688

Standard

100V

7A

19 mOhm @ 7A, 10V

4V @ 250µA

17nC @ 10V

1070pF @ 50V

1W

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWDFN

12-Power3.3x5

FDMD86100

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V

FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Power - Max: 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power 5x6

패키지: 8-PowerWDFN

재고6,240

Standard

100V

10A

10.5 mOhm @ 10A, 10V

4V @ 250µA

30nC @ 10V

2060pF @ 50V

2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power 5x6