페이지 3 - Fairchild/ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FDG6318PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 0.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 85.4pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고285,048	Logic Level Gate	20V	500mA	780 mOhm @ 500mA, 4.5V	1.5V @ 250µA	1.62nC @ 4.5V	85.4pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
FDMD85100	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.4A Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 10.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 50V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	패키지: 8-PowerWDFN	재고23,880	Standard	100V	10.4A	9.9 mOhm @ 10.4A, 10V	4V @ 250µA	31nC @ 10V	2230pF @ 50V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6
FDMQ8203	Fairchild/ON Semiconductor	MOSFET 2N/2P-CH 100V/80V 12-MLP FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V, 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-WDFN Exposed Pad Supplier Device Package: 12-MLP (5x4.5)	패키지: 12-WDFN Exposed Pad	재고21,918	Logic Level Gate	100V, 80V	3.4A, 2.6A	110 mOhm @ 3A, 10V	4V @ 250µA	5nC @ 10V	210pF @ 50V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	12-WDFN Exposed Pad	12-MLP (5x4.5)
FDPC8013S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/26A 3.3MM FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V Power - Max: 800mW, 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Powerclip-33	패키지: 8-PowerWDFN	재고28,254	Logic Level Gate	30V	13A, 26A	6.4 mOhm @ 13A, 10V	3V @ 250µA	13nC @ 10V	827pF @ 15V	800mW, 900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Powerclip-33
FDS3992	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 4.5A 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,136	Standard	100V	4.5A	62 mOhm @ 4.5A, 10V	4V @ 250µA	15nC @ 10V	750pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3624S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 17.5A/30A 8PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고262,578	Logic Level Gate	25V	17.5A, 30A	5 mOhm @ 17.5A, 10V	2V @ 250µA	26nC @ 10V	1570pF @ 13V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDMB2308PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH MLP2X3 FET Type: 2 P-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-MLP (2x3)	패키지: 6-WDFN Exposed Pad	재고44,232	Logic Level Gate	-	-	36 mOhm @ 5.7A, 4.5V	1.5V @ 250µA	30nC @ 10V	3030pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-MLP (2x3)
FDS89141	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 3.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고20,046	Logic Level Gate	100V	3.5A	62 mOhm @ 3.5A, 10V	4V @ 250µA	7.1nC @ 10V	398pF @ 50V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4542DY	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 6A 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고33,324	Standard	30V	6A	28 mOhm @ 6A, 10V	3V @ 250µA	13nC @ 5V	830pF @ 15V	1W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NDS9945	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 3.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고270,228	Logic Level Gate	60V	3.5A	100 mOhm @ 3.5A, 10V	3V @ 250µA	30nC @ 10V	345pF @ 25V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS6898A	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 9.4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고107,844	Logic Level Gate	20V	9.4A	14 mOhm @ 9.4A, 4.5V	1.5V @ 250µA	23nC @ 4.5V	1821pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS6898AZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 9.4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고96,732	Logic Level Gate	20V	9.4A	14 mOhm @ 9.4A, 4.5V	1.5V @ 250µA	23nC @ 4.5V	1821pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NDS9952A	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고476,688	Logic Level Gate	30V	3.7A, 2.9A	80 mOhm @ 1A, 10V	2.8V @ 250µA	25nC @ 10V	320pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS9934C	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V 6.5A/5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고152,292	Logic Level Gate	20V	6.5A, 5A	30 mOhm @ 6.5A, 4.5V	1.5V @ 250µA	9nC @ 4.5V	650pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS8978	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 7.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고137,412	Logic Level Gate	30V	7.5A	18 mOhm @ 7.5A, 10V	2.5V @ 250µA	26nC @ 10V	1270pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS8958B	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고325,848	Logic Level Gate	30V	6.4A, 4.5A	26 mOhm @ 6.4A, 10V	3V @ 250µA	12nC @ 10V	540pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS6930B	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 5.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고149,940	Logic Level Gate	30V	5.5A	38 mOhm @ 5.5A, 10V	3V @ 250µA	3.8nC @ 5V	412pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMA3028N	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 3.8A 6MICROFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 68 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	패키지: 6-VDFN Exposed Pad	재고435,192	Logic Level Gate	30V	3.8A	68 mOhm @ 3.8A, 4.5V	1.5V @ 250µA	5.2nC @ 5V	375pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
FDMA6023PZT	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.6A 6MICROFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	패키지: 6-UDFN Exposed Pad	재고13,428	Logic Level Gate	20V	3.6A	60 mOhm @ 3.6A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	885pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	6-MicroFET (2x2)
FDMB3900AN	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 7A 8-MLP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 13V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-MLP, MicroFET (3x1.9)	패키지: 8-PowerWDFN	재고75,120	Logic Level Gate	25V	7A	23 mOhm @ 7A, 10V	3V @ 250µA	17nC @ 10V	890pF @ 13V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-MLP, MicroFET (3x1.9)
FDC6321C	Fairchild/ON Semiconductor	MOSFET N/P-CH 25V SSOT-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고790,776	Logic Level Gate	25V	680mA, 460mA	450 mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3nC @ 5V	50pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
FDC6320C	Fairchild/ON Semiconductor	MOSFET N/P-CH 25V SSOT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-SSOT	패키지: SOT-23-6 Thin, TSOT-23-6	재고432,000	Logic Level Gate	25V	220mA, 120mA	4 Ohm @ 400mA, 4.5V	1.5V @ 250µA	0.4nC @ 4.5V	9.5pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-SSOT
FDG6304P	Fairchild/ON Semiconductor	MOSFET 2P-CH 25V 0.41A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 410mA Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고3,579,360	Logic Level Gate	25V	410mA	1.1 Ohm @ 410mA, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	62pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
NDC7003P	Fairchild/ON Semiconductor	MOSFET 2P-CH 60V 0.34A SSOT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 340mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 25V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고246,588	Logic Level Gate	60V	340mA	5 Ohm @ 340mA, 10V	3.5V @ 250µA	2.2nC @ 10V	66pF @ 25V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
FDY1002PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 0.83A SC89-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 830mA Rds On (Max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고1,400,040	Logic Level Gate	20V	830mA	500 mOhm @ 830mA, 4.5V	1V @ 250µA	3.1nC @ 4.5V	135pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
FDC6303N	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 0.68A SSOT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고61,560	Logic Level Gate	25V	680mA	450 mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V	50pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
FDC6306P	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 1.9A SSOT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.9A Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고515,952	Logic Level Gate	20V	1.9A	170 mOhm @ 1.9A, 4.5V	1.5V @ 250µA	4.2nC @ 4.5V	441pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
FDY4000CZ	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V SC89-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA, 350mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고6,560	Logic Level Gate	20V	600mA, 350mA	700 mOhm @ 600mA, 4.5V	1.5V @ 250µA	1.1nC @ 4.5V	60pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6

FDG6318PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.5A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 85.4pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고285,048

Logic Level Gate

20V

500mA

780 mOhm @ 500mA, 4.5V

1.5V @ 250µA

1.62nC @ 4.5V

85.4pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

FDMD85100

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.4A
Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 10.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 50V
Power - Max: 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power 5x6

패키지: 8-PowerWDFN

재고23,880

Standard

100V

10.4A

9.9 mOhm @ 10.4A, 10V

4V @ 250µA

31nC @ 10V

2230pF @ 50V

2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power 5x6

FDMQ8203

Fairchild/ON Semiconductor

MOSFET 2N/2P-CH 100V/80V 12-MLP

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V, 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-WDFN Exposed Pad
Supplier Device Package: 12-MLP (5x4.5)

패키지: 12-WDFN Exposed Pad

재고21,918

Logic Level Gate

100V, 80V

3.4A, 2.6A

110 mOhm @ 3A, 10V

4V @ 250µA

5nC @ 10V

210pF @ 50V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

12-WDFN Exposed Pad

12-MLP (5x4.5)

FDPC8013S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/26A 3.3MM

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V
Power - Max: 800mW, 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Powerclip-33

패키지: 8-PowerWDFN

재고28,254

Logic Level Gate

30V

13A, 26A

6.4 mOhm @ 13A, 10V

3V @ 250µA

13nC @ 10V

827pF @ 15V

800mW, 900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Powerclip-33

FDS3992

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 4.5A 8-SO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,136

Standard

100V

4.5A

62 mOhm @ 4.5A, 10V

4V @ 250µA

15nC @ 10V

750pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS3624S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 17.5A/30A 8PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고262,578

Logic Level Gate

25V

17.5A, 30A

5 mOhm @ 17.5A, 10V

2V @ 250µA

26nC @ 10V

1570pF @ 13V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDMB2308PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH MLP2X3

FET Type: 2 P-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-MLP (2x3)

패키지: 6-WDFN Exposed Pad

재고44,232

Logic Level Gate

-

36 mOhm @ 5.7A, 4.5V

1.5V @ 250µA

30nC @ 10V

3030pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-MLP (2x3)

FDS89141

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 3.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고20,046

Logic Level Gate

100V

3.5A

62 mOhm @ 3.5A, 10V

4V @ 250µA

7.1nC @ 10V

398pF @ 50V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4542DY

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 6A 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고33,324

Standard

30V

6A

28 mOhm @ 6A, 10V

3V @ 250µA

13nC @ 5V

830pF @ 15V

1W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NDS9945

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 3.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고270,228

Logic Level Gate

60V

3.5A

100 mOhm @ 3.5A, 10V

3V @ 250µA

30nC @ 10V

345pF @ 25V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS6898A

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 9.4A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고107,844

Logic Level Gate

20V

9.4A

14 mOhm @ 9.4A, 4.5V

1.5V @ 250µA

23nC @ 4.5V

1821pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS6898AZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 9.4A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고96,732

Logic Level Gate

20V

9.4A

14 mOhm @ 9.4A, 4.5V

1.5V @ 250µA

23nC @ 4.5V

1821pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NDS9952A

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고476,688

Logic Level Gate

30V

3.7A, 2.9A

80 mOhm @ 1A, 10V

2.8V @ 250µA

25nC @ 10V

320pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS9934C

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 6.5A/5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고152,292

Logic Level Gate

20V

6.5A, 5A

30 mOhm @ 6.5A, 4.5V

1.5V @ 250µA

9nC @ 4.5V

650pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS8978

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고137,412

Logic Level Gate

30V

7.5A

18 mOhm @ 7.5A, 10V

2.5V @ 250µA

26nC @ 10V

1270pF @ 15V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS8958B

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고325,848

Logic Level Gate

30V

6.4A, 4.5A

26 mOhm @ 6.4A, 10V

3V @ 250µA

12nC @ 10V

540pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS6930B

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고149,940

Logic Level Gate

30V

5.5A

38 mOhm @ 5.5A, 10V

3V @ 250µA

3.8nC @ 5V

412pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMA3028N

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 3.8A 6MICROFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

패키지: 6-VDFN Exposed Pad

재고435,192

Logic Level Gate

30V

3.8A

68 mOhm @ 3.8A, 4.5V

1.5V @ 250µA

5.2nC @ 5V

375pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

FDMA6023PZT

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.6A 6MICROFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

패키지: 6-UDFN Exposed Pad

재고13,428

Logic Level Gate

20V

3.6A

60 mOhm @ 3.6A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

885pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

6-MicroFET (2x2)

FDMB3900AN

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 7A 8-MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 13V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP, MicroFET (3x1.9)

패키지: 8-PowerWDFN

재고75,120

Logic Level Gate

25V

7A

23 mOhm @ 7A, 10V

3V @ 250µA

17nC @ 10V

890pF @ 13V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-MLP, MicroFET (3x1.9)

FDC6321C

Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SSOT-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고790,776

Logic Level Gate

25V

680mA, 460mA

450 mOhm @ 500mA, 4.5V

1.5V @ 250µA

2.3nC @ 5V

50pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

FDC6320C

Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SSOT6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-SSOT

패키지: SOT-23-6 Thin, TSOT-23-6

재고432,000

Logic Level Gate

25V

220mA, 120mA

4 Ohm @ 400mA, 4.5V

1.5V @ 250µA

0.4nC @ 4.5V

9.5pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-SSOT

FDG6304P

Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.41A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 410mA
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고3,579,360

Logic Level Gate

25V

410mA

1.1 Ohm @ 410mA, 4.5V

1.5V @ 250µA

1.5nC @ 4.5V

62pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

NDC7003P

Fairchild/ON Semiconductor

MOSFET 2P-CH 60V 0.34A SSOT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 25V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고246,588

Logic Level Gate

60V

340mA

5 Ohm @ 340mA, 10V

3.5V @ 250µA

2.2nC @ 10V

66pF @ 25V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

FDY1002PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.83A SC89-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Rds On (Max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Power - Max: 446mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고1,400,040

Logic Level Gate

20V

830mA

500 mOhm @ 830mA, 4.5V

1V @ 250µA

3.1nC @ 4.5V

135pF @ 10V

446mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

FDC6303N

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.68A SSOT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고61,560

Logic Level Gate

25V

680mA

450 mOhm @ 500mA, 4.5V

1.5V @ 250µA

2.3nC @ 4.5V

50pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

FDC6306P

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 1.9A SSOT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.9A
Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고515,952

Logic Level Gate

20V

1.9A

170 mOhm @ 1.9A, 4.5V

1.5V @ 250µA

4.2nC @ 4.5V

441pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

FDY4000CZ

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V SC89-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA, 350mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Power - Max: 446mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고6,560

Logic Level Gate

20V

600mA, 350mA

700 mOhm @ 600mA, 4.5V

1.5V @ 250µA

1.1nC @ 4.5V

60pF @ 10V

446mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6