트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  1/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA081501E1V4XWSA1
Infineon Technologies

IC RF FET LDMOS H-36248-2

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,696
-
-
-
-
-
-
-
-
-
-
BF5020WH6327XTSA1
Infineon Technologies

MOSFET N-CH 8V 25MA SOT343

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 26dB
  • Voltage - Test: 5V
  • Current Rating: 25mA
  • Noise Figure: 1.2dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고3,328
800MHz
26dB
5V
25mA
1.2dB
10mA
-
8V
SC-82A, SOT-343
PG-SOT343-4
BLP8G10S-45PGJ
NXP

TRANS LDMOS 45W 4HSOP

  • Transistor Type: LDMOS
  • Frequency: 700MHz ~ 1GHz
  • Gain: 21dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 45W
  • Voltage - Rated: 28V
  • Package / Case: SOT-1223-1
  • Supplier Device Package: 4-HSOPF
패키지: SOT-1223-1
재고5,040
700MHz ~ 1GHz
21dB
-
-
-
-
45W
28V
SOT-1223-1
4-HSOPF
BLF8G24LS-200P,112
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.74A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
패키지: SOT539B
재고3,200
2.3GHz ~ 2.4GHz
17.2dB
28V
-
-
1.74A
60W
65V
SOT539B
SOT539B
BLF6G24-180PN,112
NXP

TRANSISTOR PWR LDMOS SOT539A

  • Transistor Type: LDMOS
  • Frequency: 2GHz ~ 2.2GHz
  • Gain: 17.5dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 50W
  • Voltage - Rated: -
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고4,256
2GHz ~ 2.2GHz
17.5dB
-
-
-
-
50W
-
SOT539A
SOT539A
MRF6VP11KHR6
NXP

FET RF 2CH 110V 130MHZ NI-1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 130MHz
  • Gain: 26dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고3,280
130MHz
26dB
50V
-
-
150mA
1000W
110V
NI-1230
NI-1230
MRFE6S9130HR5
NXP

FET RF 66V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 66V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고2,480
880MHz
19.2dB
28V
-
-
950mA
27W
66V
NI-780
NI-780
MRF7S21080HR5
NXP

FET RF 65V 2.17GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 22W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고3,440
2.17GHz
18dB
28V
-
-
800mA
22W
65V
NI-780
NI-780
hot MRF21010LSR1
NXP

FET RF 65V 2.17GHZ NI-360S

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-360S
  • Supplier Device Package: NI-360 Short Lead
패키지: NI-360S
재고27,324
2.17GHz
13.5dB
28V
-
-
100mA
10W
65V
NI-360S
NI-360 Short Lead
J310ZL1G
ON Semiconductor

JFET N-CH 25V 60MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: 16dB
  • Voltage - Test: 10V
  • Current Rating: 60mA
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고5,552
100MHz
16dB
10V
60mA
-
10mA
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRF5S19100HSR5
NXP

FET RF 65V 1.99GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 13.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 22W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고6,048
1.93GHz ~ 1.99GHz
13.9dB
28V
-
-
1A
22W
65V
NI-780S
NI-780S
MRF18085BLR3
NXP

FET RF 65V 1.99GHZ NI-78O

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 12.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 90W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고2,160
1.93GHz ~ 1.99GHz
12.5dB
26V
-
-
800mA
90W
65V
NI-780
NI-780
2N5485_D26Z
Fairchild/ON Semiconductor

JFET N-CH 25V 10MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 400MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 10mA
  • Noise Figure: 4dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고5,200
400MHz
-
15V
10mA
4dB
-
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot NE34018-T1-A
CEL

FET RF 4V 2GHZ SOT-343

  • Transistor Type: HFET
  • Frequency: 2GHz
  • Gain: 16dB
  • Voltage - Test: 2V
  • Current Rating: 120mA
  • Noise Figure: 0.6dB
  • Current - Test: 5mA
  • Power - Output: 12dBm
  • Voltage - Rated: 4V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
패키지: SC-82A, SOT-343
재고448,488
2GHz
16dB
2V
120mA
0.6dB
5mA
12dBm
4V
SC-82A, SOT-343
SOT-343
BLF6G22LS-130,112
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: 34A
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고3,264
2.11GHz ~ 2.17GHz
17dB
28V
34A
-
1.1A
30W
65V
SOT-502B
SOT502B
MRF6VP121KHR5
NXP

FET RF 2CH 110V 1.03GHZ NI1230H

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.03GHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고4,784
1.03GHz
20dB
50V
-
-
150mA
1000W
110V
NI-1230
NI-1230
hot SD4933
STMicroelectronics

TRANSISTOR RF MOSFET N-CH M177

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 24dB
  • Voltage - Test: 50V
  • Current Rating: 40A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 300W
  • Voltage - Rated: 200V
  • Package / Case: M177
  • Supplier Device Package: M177
패키지: M177
재고4,272
30MHz
24dB
50V
40A
-
250mA
300W
200V
M177
M177
STAC2932FW
STMicroelectronics

TRANS RF PWR N-CH 300W STAC244B

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: -
  • Voltage - Test: 50V
  • Current Rating: 40A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 390W
  • Voltage - Rated: 125V
  • Package / Case: STAC244F
  • Supplier Device Package: STAC244F
패키지: STAC244F
재고6,420
175MHz
-
50V
40A
-
250mA
390W
125V
STAC244F
STAC244F
MMRF1004NR1
NXP

FET RF 68V 2.17GHZ TO270-2

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 10W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
패키지: TO-270AA
재고5,136
2.17GHz
15.5dB
28V
-
-
130mA
10W
68V
TO-270AA
TO-270-2
MMBFJ309
Fairchild/ON Semiconductor

JFET N-CH 25V 30MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: 450MHz
  • Gain: 12dB
  • Voltage - Test: 10V
  • Current Rating: 30mA
  • Noise Figure: 3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고4,016
450MHz
12dB
10V
30mA
3dB
10mA
-
25V
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot MMBFJ211
Fairchild/ON Semiconductor

JFET N-CH 25V 20MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 20mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고140,880
-
-
-
20mA
-
-
-
25V
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot MRFE6S9060NR1
NXP

FET RF 66V 880MHZ TO270-2

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 21.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 14W
  • Voltage - Rated: 66V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
패키지: TO-270AA
재고5,344
880MHz
21.1dB
28V
-
-
450mA
14W
66V
TO-270AA
TO-270-2
1011GN-30EP
Microchip Technology

RF MOSFET GAN 50V

  • Transistor Type: GaN
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 18.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40 mA
  • Power - Output: 35W
  • Voltage - Rated: 150 V
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
1.03GHz ~ 1.09GHz
18.5dB
50 V
-
-
40 mA
35W
150 V
Module
-
CGH35015F
MACOM Technology Solutions

RF MOSFET HEMT 28V 440196

  • Transistor Type: HEMT
  • Frequency: 3.3GHz ~ 3.9GHz
  • Gain: 12dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 15W
  • Voltage - Rated: 84 V
  • Package / Case: 440196
  • Supplier Device Package: 440196
패키지: -
재고93
3.3GHz ~ 3.9GHz
12dB
28 V
-
-
100 mA
15W
84 V
440196
440196
UPA570T-T1-A
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
DU2840S
MACOM Technology Solutions

RF MOSFET 28V

  • Transistor Type: -
  • Frequency: 2MHz ~ 175MHz
  • Gain: 13dB
  • Voltage - Test: 28 V
  • Current Rating: 2mA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 40W
  • Voltage - Rated: 65 V
  • Package / Case: 4L-FLG
  • Supplier Device Package: -
패키지: -
Request a Quote
2MHz ~ 175MHz
13dB
28 V
2mA
-
200 mA
40W
65 V
4L-FLG
-
A3T18H360W23SR6
NXP

RF MOSFET LDMOS 28V ACP1230S-4

  • Transistor Type: LDMOS
  • Frequency: 1.8GHz ~ 1.88GHz
  • Gain: 16.6dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 700 mA
  • Power - Output: 63W
  • Voltage - Rated: 65 V
  • Package / Case: ACP-1230S-4L2S
  • Supplier Device Package: ACP-1230S-4L2S
패키지: -
Request a Quote
1.8GHz ~ 1.88GHz
16.6dB
28 V
10µA
-
700 mA
63W
65 V
ACP-1230S-4L2S
ACP-1230S-4L2S
BB504CDS-TL-H
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-