페이지 2 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  2/138
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제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTVA123501ECV2XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,560
-
-
-
-
-
-
-
-
-
-
hot NE3503M04-T2B-A
CEL

FET RF 4V 12GHZ M04

  • Transistor Type: HFET
  • Frequency: 12GHz
  • Gain: 12dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.45dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: M04
패키지: 4-SMD, Flat Leads
재고2,512,248
12GHz
12dB
2V
70mA
0.45dB
10mA
-
4V
4-SMD, Flat Leads
M04
MRF5P20180HR6
NXP

FET RF 65V 1.99GHZ NI-1230

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 38W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고7,680
1.93GHz ~ 1.99GHz
14dB
28V
-
-
1.6A
38W
65V
NI-1230
NI-1230
BLF6G38-50,112
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 16.5A
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 9W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고5,488
3.4GHz ~ 3.6GHz
14dB
28V
16.5A
-
450mA
9W
65V
SOT-502A
LDMOST
AFV121KGSR5
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 960MHz ~ 1.22GHz
  • Gain: 19.6dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 112V
  • Package / Case: NI-1230-4S GW
  • Supplier Device Package: NI-1230-4S Gull Wing
패키지: NI-1230-4S GW
재고4,000
960MHz ~ 1.22GHz
19.6dB
50V
-
-
100mA
1000W
112V
NI-1230-4S GW
NI-1230-4S Gull Wing
hot MRF8P9300HSR6
NXP

FET RF 2CH 70V 960MHZ NI-1230HS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 960MHz
  • Gain: 19.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.4A
  • Power - Output: 100W
  • Voltage - Rated: 70V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고4,336
960MHz
19.4dB
28V
-
-
2.4A
100W
70V
NI-1230S
NI-1230S
MRFE6S9125NBR1
NXP

FET RF 66V 880MHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 66V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272BB
재고6,192
880MHz
20.2dB
28V
-
-
950mA
27W
66V
TO-272BB
TO-272 WB-4
NPT1012B
M/A-Com Technology Solutions

HEMT N-CH 28V 25W DC-4000MHZ

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 4GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 225mA
  • Power - Output: -
  • Voltage - Rated: 100V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,496
0Hz ~ 4GHz
13dB
28V
-
-
225mA
-
100V
-
-
NPT1004D
M/A-Com Technology Solutions

HEMT N-CH 28V 45W DC-4GHZ 8SOIC

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 4GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: 9.5A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 37dBm
  • Voltage - Rated: 100V
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOP2
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고6,228
0Hz ~ 4GHz
13dB
28V
9.5A
-
350mA
37dBm
100V
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOP2
STAC3932F
STMicroelectronics

TRANS RF PWR N-CH STAC244F

  • Transistor Type: N-Channel
  • Frequency: 123MHz
  • Gain: 24.6dB
  • Voltage - Test: 100V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 580W
  • Voltage - Rated: 250V
  • Package / Case: STAC244F
  • Supplier Device Package: STAC244F
패키지: STAC244F
재고6,960
123MHz
24.6dB
100V
20A
-
250mA
580W
250V
STAC244F
STAC244F
375-501N21A-00
IXYS

RF MOSFET N-CHANNEL DE375

  • Transistor Type: N-Channel
  • Frequency: 50MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 940W
  • Voltage - Rated: 500V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE375
패키지: 6-SMD, Flat Lead Exposed Pad
재고7,840
50MHz
-
-
1mA
-
-
940W
500V
6-SMD, Flat Lead Exposed Pad
DE375
BLF6G10LS-200RN:11
Ampleon USA Inc.

RF FET LDMOS 65V 20DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: 49A
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고7,908
871.5MHz ~ 891.5MHz
20dB
28V
49A
-
1.4A
40W
65V
SOT-502B
SOT502B
CLF1G0060-30U
Ampleon USA Inc.

RF FET HEMT 150V 13DB SOT1227A

  • Transistor Type: HEMT
  • Frequency: 3GHz ~ 3.5GHz
  • Gain: 13dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 70mA
  • Power - Output: 30W
  • Voltage - Rated: 150V
  • Package / Case: SOT-1227A
  • Supplier Device Package: SOT-1227A
패키지: SOT-1227A
재고6,372
3GHz ~ 3.5GHz
13dB
50V
-
-
70mA
30W
150V
SOT-1227A
SOT-1227A
CGHV40030F
Cree/Wolfspeed

FET RF 125V 6GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 16dB
  • Voltage - Test: 50V
  • Current Rating: 4.2A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 30W
  • Voltage - Rated: 125V
  • Package / Case: 440166
  • Supplier Device Package: 440166
패키지: 440166
재고6,928
0Hz ~ 6GHz
16dB
50V
4.2A
-
150mA
30W
125V
440166
440166
B11G3742N81DYZ
Ampleon USA Inc.

RF MOSFET LDMOS 550 MV 36QFN

  • Transistor Type: LDMOS
  • Frequency: 3.7GHz ~ 4.2GHz
  • Gain: 32dB
  • Voltage - Test: 550 mV
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 195 mA
  • Power - Output: 48.4dBm
  • Voltage - Rated: 28 V
  • Package / Case: 36-QFN Exposed Pad
  • Supplier Device Package: 36-PQFN (12x7)
패키지: -
재고603
3.7GHz ~ 4.2GHz
32dB
550 mV
1.4µA
-
195 mA
48.4dBm
28 V
36-QFN Exposed Pad
36-PQFN (12x7)
PTFA180701E-V4-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 1.84GHz
  • Gain: 16.5dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 550 mA
  • Power - Output: 60W
  • Voltage - Rated: 65 V
  • Package / Case: H-36265-2
  • Supplier Device Package: H-36265-2
패키지: -
Request a Quote
1.84GHz
16.5dB
28 V
10µA
-
550 mA
60W
65 V
H-36265-2
H-36265-2
CGHV37400F
MACOM Technology Solutions

RF MOSFET HEMT 50V 440217

  • Transistor Type: HEMT
  • Frequency: 3.3GHz ~ 3.8GHz
  • Gain: 14dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1 A
  • Power - Output: 525W
  • Voltage - Rated: 125 V
  • Package / Case: 440217
  • Supplier Device Package: 440217
패키지: -
재고135
3.3GHz ~ 3.8GHz
14dB
50 V
-
-
1 A
525W
125 V
440217
440217
MRF18085BLSR3
Freescale Semiconductor

RF MOSFET 26V NI780

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 12.5dB
  • Voltage - Test: 26 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 800 mA
  • Power - Output: 85W
  • Voltage - Rated: 65 V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: -
Request a Quote
1.93GHz ~ 1.99GHz
12.5dB
26 V
10µA
-
800 mA
85W
65 V
NI-780S
NI-780S
BCP060C
BeRex Inc

RF MOSFET PHEMT FET 8V DIE

  • Transistor Type: pHEMT FET
  • Frequency: 6GHz ~ 18GHz
  • Gain: 12dB
  • Voltage - Test: 8 V
  • Current Rating: 250mA
  • Noise Figure: 1.3dB
  • Current - Test: 90 mA
  • Power - Output: 27.5dBm
  • Voltage - Rated: 12 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
6GHz ~ 18GHz
12dB
8 V
250mA
1.3dB
90 mA
27.5dBm
12 V
Die
Die
GTVA311801FA-V1-R250
MACOM Technology Solutions

RF MOSFET HEMT 50V H-37265J-2

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 15dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 20 mA
  • Power - Output: 180W
  • Voltage - Rated: 125 V
  • Package / Case: H-37265J-2
  • Supplier Device Package: H-37265J-2
패키지: -
재고750
2.7GHz ~ 3.1GHz
15dB
50 V
-
-
20 mA
180W
125 V
H-37265J-2
H-37265J-2
0912GN-100LV
Microchip Technology

RF MOSFET HEMT 50V 55-KR

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 17.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 70 mA
  • Power - Output: 110W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
패키지: -
Request a Quote
960MHz ~ 1.215GHz
17.5dB
50 V
-
-
70 mA
110W
150 V
55-KR
55-KR
CLF1G0035-100P
NXP

RF MOSFET HEMT 50V LDMOST

  • Transistor Type: HEMT
  • Frequency: 3.5GHz
  • Gain: 12.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 330 mA
  • Power - Output: 100W
  • Voltage - Rated: 150 V
  • Package / Case: SOT-1228A
  • Supplier Device Package: LDMOST
패키지: -
Request a Quote
3.5GHz
12.5dB
50 V
-
-
330 mA
100W
150 V
SOT-1228A
LDMOST
BCP020C-70
BeRex Inc

RF MOSFET PHEMT FET 6V 4MICROX

  • Transistor Type: pHEMT FET
  • Frequency: 1GHz ~ 26GHz
  • Gain: 13.5dB
  • Voltage - Test: 6 V
  • Current Rating: 80mA
  • Noise Figure: -
  • Current - Test: 40 mA
  • Power - Output: 21.5dBm
  • Voltage - Rated: 12 V
  • Package / Case: 4-Micro-X
  • Supplier Device Package: 4-Micro-X
패키지: -
Request a Quote
1GHz ~ 26GHz
13.5dB
6 V
80mA
-
40 mA
21.5dBm
12 V
4-Micro-X
4-Micro-X
MRF175GV
MACOM Technology Solutions

RF MOSFET 28V 375-04

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 225MHz
  • Gain: 14dB
  • Voltage - Test: 28 V
  • Current Rating: 26A
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 200W
  • Voltage - Rated: 65 V
  • Package / Case: 375-04
  • Supplier Device Package: 375-04, Style 2
패키지: -
Request a Quote
225MHz
14dB
28 V
26A
-
100 mA
200W
65 V
375-04
375-04, Style 2
MRF24301HSR5
NXP

RF MOSFET LDMOS NI780

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz ~ 2.5GHz
  • Gain: 13.5dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 300W
  • Voltage - Rated: -
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: -
Request a Quote
2.4GHz ~ 2.5GHz
13.5dB
-
-
-
-
300W
-
NI-780S
NI-780S
1214GN-120V
Microchip Technology

RF MOSFET HEMT 50V 55-QQ

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17.16dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30 mA
  • Power - Output: 130W
  • Voltage - Rated: 125 V
  • Package / Case: 55-QQ
  • Supplier Device Package: 55-QQ
패키지: -
Request a Quote
1.2GHz ~ 1.4GHz
17.16dB
50 V
-
-
30 mA
130W
125 V
55-QQ
55-QQ
BLC10G19XS-601AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.995GHz
  • Gain: 15dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.06 A
  • Power - Output: 600W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
패키지: -
재고300
1.93GHz ~ 1.995GHz
15dB
30 V
2.8µA
-
1.06 A
600W
65 V
SOT-1258-4
SOT1258-4
CG2H80030D-GP4
MACOM Technology Solutions

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 8GHz
  • Gain: 16.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 30W
  • Voltage - Rated: 84 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
재고210
8GHz
16.5dB
28 V
-
-
200 mA
30W
84 V
Die
Die