페이지 2 - Cree/Wolfspeed 제품

부품 번호	제조업체	설명	패키지	재고
C3M0065090J-TR	Cree/Wolfspeed	MOSFET N-CH 900V 35A D2PAK-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	재고3,520
C3M0280090J-TR	Cree/Wolfspeed	MOSFET N-CH 900V 11A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V Vgs (Max): +18V, -8V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	재고19,680
CGHV27100F	Cree/Wolfspeed	FET RF 50V 2.7GHZ 440162 Transistor Type: HEMT Frequency: 2.5GHz ~ 2.7GHz Gain: 18dB Voltage - Test: 50V Current Rating: 6A Noise Figure: - Current - Test: 500mA Power - Output: 100W Voltage - Rated: 50V Package / Case: 440162 Supplier Device Package: 440162	패키지: 440162	재고7,968
CGH60015D	Cree/Wolfspeed	RF MOSFET HEMT 28V DIE Transistor Type: HEMT Frequency: 6GHz Gain: 15dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 200mA Power - Output: 15W Voltage - Rated: 84V Package / Case: Die Supplier Device Package: Die	패키지: Die	재고5,408
CGHV40320D	Cree/Wolfspeed	RF MOSFET HEMT 50V DIE Transistor Type: HEMT Frequency: 4GHz Gain: 19dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 500mA Power - Output: 320W Voltage - Rated: 150V Package / Case: Die Supplier Device Package: Die	패키지: Die	재고5,264
CGH27030F	Cree/Wolfspeed	RF MOSFET HEMT 28V 440166 Transistor Type: HEMT Frequency: 3GHz Gain: 14.5dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 150mA Power - Output: 30W Voltage - Rated: 84V Package / Case: 440166 Supplier Device Package: 440166	패키지: 440166	재고6,792
CGHV40100F	Cree/Wolfspeed	FET RF 125V 3GHZ 440193 Transistor Type: HEMT Frequency: 0Hz ~ 3GHz Gain: 11dB Voltage - Test: 50V Current Rating: 8.7A Noise Figure: - Current - Test: 600mA Power - Output: 116W Voltage - Rated: 125V Package / Case: 440193 Supplier Device Package: 440193	패키지: 440193	재고14,844
CAS100H12AM1	Cree/Wolfspeed	MOSFET 2N-CH 1200V 168A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 168A Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3.1V @ 50mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 800V Power - Max: 568W Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고7,872
CCS050M12CM2	Cree/Wolfspeed	MOSFET 6N-CH 1200V 87A MODULE FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 87A Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 2.3V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2.810nF @ 800V Power - Max: 337W Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고5,440
CSD04060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 7A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 7A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 220pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고7,808
C3D10060G-TR	Cree/Wolfspeed	DIODE SCHOTTKY 600V 29.5A TO263 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 29.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,520
C4D02120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 2A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 167pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,328
C3D04060E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 600V 15.5A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고10,356
C3D04065A	Cree/Wolfspeed	DIODE SCHOTTKY 650V 4A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 650V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고138,000
C3D08065E	Cree/Wolfspeed	DIODE SCHOTTKY 650V 25.5A TO252 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 25.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 395pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,208
C3D1P7060Q	Cree/Wolfspeed	DIODE SCHOTTKY 600V 1.7A 10PQFN Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.7A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.7A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 100pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 10-PowerTQFN Supplier Device Package: 10-Power QFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 160°C	패키지: 10-PowerTQFN	재고2,176
C3D12065A	Cree/Wolfspeed	DIODE SCHOTTKY 650V 35A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 35A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 74µA @ 650V Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고5,712
C3D04065E	Cree/Wolfspeed	DIODE SCHOTTKY 650V 4A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 650V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고28,038
C3D25170H	Cree/Wolfspeed	DIODE SCHOTTKY 1.7KV 26.3A TO247 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 26.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2.5V @ 25A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1700V Capacitance @ Vr, F: 2079pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고7,248
C4D05120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 5A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 150µA @ 1200V Capacitance @ Vr, F: 390pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고59,508
C3D10060G	Cree/Wolfspeed	DIODE SCHOTTKY 600V 10A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고26,490
C4D02120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 2A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 167pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고24,792
C2D20120D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 1200V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 22A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고14,304
C4D40120D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 1200V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 27A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고22,836
CGHV27060MP-AMP1	Cree/Wolfspeed	EVAL BOARD FOR CGHV27060 Type: HEMT Frequency: 0Hz ~ 2.7GHz For Use With/Related Products: CGHV27060 Supplied Contents: Board	패키지: -	재고4,950
CGHV40050F-TB	Cree/Wolfspeed	TEST BOARD FOR CGHV40050F Type: Transistor Frequency: 0Hz ~ 4GHz For Use With/Related Products: CGHV40050 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고7,308
CMPA1D1E025F	Cree/Wolfspeed	IC AMP GAN HEMT MMIC 440208 Frequency: 13.75GHz ~ 14.5GHz P1dB: - Gain: 24dB Noise Figure: - RF Type: - Voltage - Supply: 40V Current - Supply: - Test Frequency: - Package / Case: 440208 Supplier Device Package: 440208	패키지: 440208	재고8,028
CMPA2560025F	Cree/Wolfspeed	IC AMP GAN HEMT MMIC 780019 Frequency: 2.5GHz ~ 6GHz P1dB: - Gain: 24dB Noise Figure: - RF Type: - Voltage - Supply: 6 V ~ 28 V Current - Supply: 20mA ~ 10A Test Frequency: 2.5GHz ~ 6GHz Package / Case: 780019 Supplier Device Package: 780019	패키지: 780019	재고6,858

C3M0065090J-TR

Cree/Wolfspeed

MOSFET N-CH 900V 35A D2PAK-7

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
Vgs (Max): +19V, -8V
FET Feature: -
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

재고3,520

C3M0280090J-TR

Cree/Wolfspeed

MOSFET N-CH 900V 11A

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
Vgs (Max): +18V, -8V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

재고19,680

CGHV27100F

Cree/Wolfspeed

FET RF 50V 2.7GHZ 440162

Transistor Type: HEMT
Frequency: 2.5GHz ~ 2.7GHz
Gain: 18dB
Voltage - Test: 50V
Current Rating: 6A
Noise Figure: -
Current - Test: 500mA
Power - Output: 100W
Voltage - Rated: 50V
Package / Case: 440162
Supplier Device Package: 440162

패키지: 440162

재고7,968

CGH60015D

Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

Transistor Type: HEMT
Frequency: 6GHz
Gain: 15dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 200mA
Power - Output: 15W
Voltage - Rated: 84V
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고5,408

CGHV40320D

Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

Transistor Type: HEMT
Frequency: 4GHz
Gain: 19dB
Voltage - Test: 50V
Current Rating: -
Noise Figure: -
Current - Test: 500mA
Power - Output: 320W
Voltage - Rated: 150V
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고5,264

CGH27030F

Cree/Wolfspeed

RF MOSFET HEMT 28V 440166

Transistor Type: HEMT
Frequency: 3GHz
Gain: 14.5dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 150mA
Power - Output: 30W
Voltage - Rated: 84V
Package / Case: 440166
Supplier Device Package: 440166

패키지: 440166

재고6,792

CGHV40100F

Cree/Wolfspeed

FET RF 125V 3GHZ 440193

Transistor Type: HEMT
Frequency: 0Hz ~ 3GHz
Gain: 11dB
Voltage - Test: 50V
Current Rating: 8.7A
Noise Figure: -
Current - Test: 600mA
Power - Output: 116W
Voltage - Rated: 125V
Package / Case: 440193
Supplier Device Package: 440193

패키지: 440193

재고14,844

CAS100H12AM1

Cree/Wolfspeed

MOSFET 2N-CH 1200V 168A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 168A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3.1V @ 50mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 800V
Power - Max: 568W
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고7,872

CCS050M12CM2

Cree/Wolfspeed

MOSFET 6N-CH 1200V 87A MODULE

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 87A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 2.810nF @ 800V
Power - Max: 337W
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고5,440

CSD04060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 7A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 7A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 220pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고7,808

C3D10060G-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 29.5A TO263

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 29.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,520

C4D02120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 2A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,328

C3D04060E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 15.5A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고10,356

C3D04065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 4A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 650V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고138,000

C3D08065E

Cree/Wolfspeed

DIODE SCHOTTKY 650V 25.5A TO252

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 25.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 650V
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,208

C3D1P7060Q

Cree/Wolfspeed

DIODE SCHOTTKY 600V 1.7A 10PQFN

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.7A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.7A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 100pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 10-PowerTQFN
Supplier Device Package: 10-Power QFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 160°C

패키지: 10-PowerTQFN

재고2,176

C3D12065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 35A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 35A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 74µA @ 650V
Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고5,712

C3D04065E

Cree/Wolfspeed

DIODE SCHOTTKY 650V 4A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 650V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고28,038

C3D25170H

Cree/Wolfspeed

DIODE SCHOTTKY 1.7KV 26.3A TO247

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 26.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 25A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1700V
Capacitance @ Vr, F: 2079pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고7,248

C4D05120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 5A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 150µA @ 1200V
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고59,508

C3D10060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 10A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고26,490

C4D02120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 2A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고24,792

C2D20120D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 22A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고14,304

C4D40120D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 27A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고22,836

CGHV27060MP-AMP1

Cree/Wolfspeed

EVAL BOARD FOR CGHV27060

Type: HEMT
Frequency: 0Hz ~ 2.7GHz
For Use With/Related Products: CGHV27060
Supplied Contents: Board

패키지: -

재고4,950

CGHV40050F-TB

Cree/Wolfspeed

TEST BOARD FOR CGHV40050F

Type: Transistor
Frequency: 0Hz ~ 4GHz
For Use With/Related Products: CGHV40050
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고7,308

CMPA1D1E025F

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 440208

Frequency: 13.75GHz ~ 14.5GHz
P1dB: -
Gain: 24dB
Noise Figure: -
RF Type: -
Voltage - Supply: 40V
Current - Supply: -
Test Frequency: -
Package / Case: 440208
Supplier Device Package: 440208

패키지: 440208

재고8,028

CMPA2560025F

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 780019

Frequency: 2.5GHz ~ 6GHz
P1dB: -
Gain: 24dB
Noise Figure: -
RF Type: -
Voltage - Supply: 6 V ~ 28 V
Current - Supply: 20mA ~ 10A
Test Frequency: 2.5GHz ~ 6GHz
Package / Case: 780019
Supplier Device Package: 780019

패키지: 780019

재고6,858