페이지 5 - Cree/Wolfspeed 제품

부품 번호	제조업체	설명	패키지	재고
CMF10120D	Cree/Wolfspeed	MOSFET N-CH 1200V 24A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V Vgs (Max): +25V, -5V FET Feature: - Power Dissipation (Max): 134W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	패키지: TO-247-3	재고5,296
C3M0065100K	Cree/Wolfspeed	1000V, 65 MOHM, G3 SIC MOSFET FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 113.5W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: - Supplier Device Package: TO-247-4L Package / Case: TO-247-4	패키지: TO-247-4	재고19,500
C3M0120090J	Cree/Wolfspeed	MOSFET N-CH 900V 22A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V Vgs (Max): +18V, -8V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	재고8,340
CRF24010PE	Cree/Wolfspeed	FET RF 120V 1.95GHZ 440196 Transistor Type: Silicon Carbide MESFET Frequency: 1.95GHz Gain: 15dB Voltage - Test: 48V Current Rating: 1.8A Noise Figure: 3.1dB Current - Test: 500mA Power - Output: 12W Voltage - Rated: 120V Package / Case: 440196 Supplier Device Package: 440196	패키지: 440196	재고5,216
CRF24010FE	Cree/Wolfspeed	FET RF 120V 1.95GHZ 440166 Transistor Type: Silicon Carbide MESFET Frequency: 1.95GHz Gain: 15dB Voltage - Test: 48V Current Rating: 1.8A Noise Figure: 3.1dB Current - Test: 500mA Power - Output: 12W Voltage - Rated: 120V Package / Case: 440166 Supplier Device Package: 440166	패키지: 440166	재고2,944
CGHV27060MP	Cree/Wolfspeed	IC HEMT TRANS 60W 50V 2700MZ Transistor Type: HEMT Frequency: 2.7GHz Gain: 16.5dB Voltage - Test: 50V Current Rating: 6.3A Noise Figure: - Current - Test: 125mA Power - Output: 80W Voltage - Rated: 150V Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	패키지: 20-TSSOP (0.173", 4.40mm Width)	재고5,168
CGHV27200F	Cree/Wolfspeed	FET RF 50V 2.7GHZ 440162 Transistor Type: HEMT Frequency: 2.5GHz ~ 2.7GHz Gain: 15dB ~ 16dB Voltage - Test: 50V Current Rating: 12A Noise Figure: - Current - Test: 1A Power - Output: 200W Voltage - Rated: 50V Package / Case: 440162 Supplier Device Package: 440162	패키지: 440162	재고7,696
CGH40045F	Cree/Wolfspeed	FET RF 84V 4GHZ 440193 Transistor Type: HEMT Frequency: 0Hz ~ 4GHz Gain: 14dB Voltage - Test: 28V Current Rating: 14A Noise Figure: - Current - Test: 400mA Power - Output: 55W Voltage - Rated: 84V Package / Case: 440193 Supplier Device Package: 440193	패키지: 440193	재고14,916
CGH40035F	Cree/Wolfspeed	FET RF 84V 4GHZ 440193 Transistor Type: HEMT Frequency: 0Hz ~ 4GHz Gain: 14dB Voltage - Test: 28V Current Rating: 10.5A Noise Figure: - Current - Test: 500mA Power - Output: 45W Voltage - Rated: 84V Package / Case: 440193 Supplier Device Package: 440193	패키지: 440193	재고14,352
CSD10060G	Cree/Wolfspeed	DIODE SCHOTTKY 600V 16.5A TO263 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 550pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고16,272
CSD10060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 16.5A TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 550pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고10,092
CSD06060G	Cree/Wolfspeed	DIODE SCHOTTKY 600V 10A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 340pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,552
CSD06060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 340pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고272,172
CSD04060E	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 220pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,312
C3D06060G	Cree/Wolfspeed	DIODE SCHOTTKY 600V 6A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 295pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고180,588
C3D03060E	Cree/Wolfspeed	DIODE SCHOTTKY 600V 3A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 155pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고6,896
C3D08065I	Cree/Wolfspeed	DIODE SCHOTTKY 650V 8A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 650V Capacitance @ Vr, F: 441pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Supplier Device Package: TO-220-2 Isolated Tab Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2 Isolated Tab	재고7,968
C2D05120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 5A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Capacitance @ Vr, F: 455pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고9,984
C3D10170H	Cree/Wolfspeed	DIODE SCHOTTKY 1.7KV 14.4A TO247 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 14.4A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 1700V Capacitance @ Vr, F: 827pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고13,728
C3D16065D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 650V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io) (per Diode): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 650V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고13,716
C3D16060D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 600V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고15,456
CGHV1F006S-AMP3	Cree/Wolfspeed	DEMO HEMT TRANS AMP3 CGHV1F006S Type: HEMT Frequency: 0Hz ~ 18GHz For Use With/Related Products: CGHV1F006 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고4,842
CGHV59070F-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV59070F Type: HEMT Frequency: 5.2GHz ~ 5.9GHz For Use With/Related Products: CGHV59070F Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고3,222
CGHV59350F-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV59350F Type: HEMT Frequency: 5.2GHz ~ 5.9GHz For Use With/Related Products: CGHV59350 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고6,642
CMPA1D1E025F-TB	Cree/Wolfspeed	TEST FIXTURE FOR CMPA1D1E025F Type: HEMT Frequency: 13.75GHz ~ 14.5GHz For Use With/Related Products: CMPA1D1E025 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고5,220
CGHV35400F-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV35400F Type: FET Frequency: 2.9GHz ~ 3.5GHz For Use With/Related Products: CGHV35400 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고8,514
CGH40090PP-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40090 Type: HEMT Frequency: 500MHz ~ 2.5GHz For Use With/Related Products: CGH40090PP Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고6,840
CGH40025F-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40025 Type: HEMT Frequency: 0Hz ~ 4.5GHz For Use With/Related Products: CGH40025F/ CGH40025P Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고5,814

CMF10120D

Cree/Wolfspeed

MOSFET N-CH 1200V 24A TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V
Vgs (Max): +25V, -5V
FET Feature: -
Power Dissipation (Max): 134W (Tc)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

패키지: TO-247-3

재고5,296

C3M0065100K

Cree/Wolfspeed

1000V, 65 MOHM, G3 SIC MOSFET

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
Vgs (Max): +19V, -8V
FET Feature: -
Power Dissipation (Max): 113.5W (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: -
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4

패키지: TO-247-4

재고19,500

C3M0120090J

Cree/Wolfspeed

MOSFET N-CH 900V 22A

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
Vgs (Max): +18V, -8V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

재고8,340

CRF24010PE

Cree/Wolfspeed

FET RF 120V 1.95GHZ 440196

Transistor Type: Silicon Carbide MESFET
Frequency: 1.95GHz
Gain: 15dB
Voltage - Test: 48V
Current Rating: 1.8A
Noise Figure: 3.1dB
Current - Test: 500mA
Power - Output: 12W
Voltage - Rated: 120V
Package / Case: 440196
Supplier Device Package: 440196

패키지: 440196

재고5,216

CRF24010FE

Cree/Wolfspeed

FET RF 120V 1.95GHZ 440166

Transistor Type: Silicon Carbide MESFET
Frequency: 1.95GHz
Gain: 15dB
Voltage - Test: 48V
Current Rating: 1.8A
Noise Figure: 3.1dB
Current - Test: 500mA
Power - Output: 12W
Voltage - Rated: 120V
Package / Case: 440166
Supplier Device Package: 440166

패키지: 440166

재고2,944

CGHV27060MP

Cree/Wolfspeed

IC HEMT TRANS 60W 50V 2700MZ

Transistor Type: HEMT
Frequency: 2.7GHz
Gain: 16.5dB
Voltage - Test: 50V
Current Rating: 6.3A
Noise Figure: -
Current - Test: 125mA
Power - Output: 80W
Voltage - Rated: 150V
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

패키지: 20-TSSOP (0.173", 4.40mm Width)

재고5,168

CGHV27200F

Cree/Wolfspeed

FET RF 50V 2.7GHZ 440162

Transistor Type: HEMT
Frequency: 2.5GHz ~ 2.7GHz
Gain: 15dB ~ 16dB
Voltage - Test: 50V
Current Rating: 12A
Noise Figure: -
Current - Test: 1A
Power - Output: 200W
Voltage - Rated: 50V
Package / Case: 440162
Supplier Device Package: 440162

패키지: 440162

재고7,696

CGH40045F

Cree/Wolfspeed

FET RF 84V 4GHZ 440193

Transistor Type: HEMT
Frequency: 0Hz ~ 4GHz
Gain: 14dB
Voltage - Test: 28V
Current Rating: 14A
Noise Figure: -
Current - Test: 400mA
Power - Output: 55W
Voltage - Rated: 84V
Package / Case: 440193
Supplier Device Package: 440193

패키지: 440193

재고14,916

CGH40035F

Cree/Wolfspeed

FET RF 84V 4GHZ 440193

Transistor Type: HEMT
Frequency: 0Hz ~ 4GHz
Gain: 14dB
Voltage - Test: 28V
Current Rating: 10.5A
Noise Figure: -
Current - Test: 500mA
Power - Output: 45W
Voltage - Rated: 84V
Package / Case: 440193
Supplier Device Package: 440193

패키지: 440193

재고14,352

CSD10060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 16.5A TO263

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고16,272

CSD10060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 16.5A TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고10,092

CSD06060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 10A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,552

CSD06060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고272,172

CSD04060E

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 220pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,312

C3D06060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 6A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고180,588

C3D03060E

Cree/Wolfspeed

DIODE SCHOTTKY 600V 3A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고6,896

C3D08065I

Cree/Wolfspeed

DIODE SCHOTTKY 650V 8A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 650V
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Supplier Device Package: TO-220-2 Isolated Tab
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2 Isolated Tab

재고7,968

C2D05120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 5A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Capacitance @ Vr, F: 455pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고9,984

C3D10170H

Cree/Wolfspeed

DIODE SCHOTTKY 1.7KV 14.4A TO247

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 14.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 1700V
Capacitance @ Vr, F: 827pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고13,728

C3D16065D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 650V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io) (per Diode): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 650V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고13,716

C3D16060D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 600V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고15,456

CGHV1F006S-AMP3

Cree/Wolfspeed

DEMO HEMT TRANS AMP3 CGHV1F006S

Type: HEMT
Frequency: 0Hz ~ 18GHz
For Use With/Related Products: CGHV1F006
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고4,842

CGHV59070F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV59070F

Type: HEMT
Frequency: 5.2GHz ~ 5.9GHz
For Use With/Related Products: CGHV59070F
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고3,222

CGHV59350F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV59350F

Type: HEMT
Frequency: 5.2GHz ~ 5.9GHz
For Use With/Related Products: CGHV59350
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고6,642

CMPA1D1E025F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CMPA1D1E025F

Type: HEMT
Frequency: 13.75GHz ~ 14.5GHz
For Use With/Related Products: CMPA1D1E025
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고5,220

CGHV35400F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV35400F

Type: FET
Frequency: 2.9GHz ~ 3.5GHz
For Use With/Related Products: CGHV35400
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고8,514

CGH40090PP-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40090

Type: HEMT
Frequency: 500MHz ~ 2.5GHz
For Use With/Related Products: CGH40090PP
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고6,840

CGH40025F-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40025

Type: HEMT
Frequency: 0Hz ~ 4.5GHz
For Use With/Related Products: CGH40025F/ CGH40025P
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고5,814