페이지 21 - Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 4,844
페이지  21/173
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재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SISA40DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 43.7A/162A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 43.7A (Ta), 162A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
  • Vgs (Max): +12V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
패키지: -
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MOSFET (Metal Oxide)
20 V
43.7A (Ta), 162A (Tc)
2.5V, 10V
1.5V @ 250µA
53 nC @ 10 V
3415 pF @ 10 V
+12V, -8V
-
3.7W (Ta), 52W (Tc)
1.1mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIHLZ34S-GE3
Vishay Siliconix

MOSFET N-CH 60V 30A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
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MOSFET (Metal Oxide)
60 V
30A (Tc)
4V, 5V
2V @ 250µA
35 nC @ 5 V
1600 pF @ 25 V
±10V
-
3.7W (Ta), 88W (Tc)
50mOhm @ 18A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SISH536DN-T1-GE3
Vishay Siliconix

N-CHANNEL 30 V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 67.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
  • Vgs (Max): +16V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8SH
  • Package / Case: PowerPAK® 1212-8SH
패키지: -
재고31,416
MOSFET (Metal Oxide)
30 V
24.7A (Ta), 67.4A (Tc)
4.5V, 10V
2.2V @ 250µA
25 nC @ 10 V
1150 pF @ 15 V
+16V, -12V
-
3.57W (Ta), 26.5W (Tc)
3.25mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SH
PowerPAK® 1212-8SH
SQD10N30-330H_4GE3
Vishay Siliconix

N-CHANNEL 300-V (D-S) 175C MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고5,076
MOSFET (Metal Oxide)
300 V
10A (Tc)
10V
4.4V @ 250µA
47 nC @ 10 V
2190 pF @ 25 V
±30V
-
107W (Tc)
330mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIRA66DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
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MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
2.2V @ 1mA
66 nC @ 10 V
-
+20V, -16V
-
62.5W (Tc)
2.3mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIR124DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 80V 16.1A/56.8A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 56.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고35,880
MOSFET (Metal Oxide)
80 V
16.1A (Ta), 56.8A (Tc)
7.5V, 10V
3.8V @ 250µA
40 nC @ 10 V
1666 pF @ 40 V
±20V
-
5W (Ta), 62.5W (Tc)
8.4mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SQA470EEJ-T1_GE3
Vishay Siliconix

MOSFET N-CH 30V 2.25A PPAK SC70

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 13.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6
  • Package / Case: PowerPAK® SC-70-6
패키지: -
재고22,521
MOSFET (Metal Oxide)
30 V
2.25A (Tc)
2.5V, 4.5V
1.6V @ 250µA
5.2 nC @ 4.5 V
453 pF @ 20 V
±12V
-
13.6W (Tc)
56mOhm @ 2A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
SIA430DJT-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 12A PPAK SC70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 19.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6 Single
  • Package / Case: PowerPAK® SC-70-6
패키지: -
재고9,000
MOSFET (Metal Oxide)
20 V
12A (Tc)
4.5V, 10V
3V @ 250µA
18 nC @ 10 V
800 pF @ 10 V
±20V
-
19.2W (Tc)
13.5mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Single
PowerPAK® SC-70-6
SI2304DDS-T1-BE3
Vishay Siliconix

MOSFET N-CH 30V 3.3A/3.6A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고10,695
MOSFET (Metal Oxide)
30 V
3.3A (Ta), 3.6A (Tc)
4.5V, 10V
2.2V @ 250µA
6.7 nC @ 10 V
235 pF @ 15 V
±20V
-
1.1W (Ta), 1.7W (Tc)
60mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SI3469DV-T1-BE3
Vishay Siliconix

P-CHANNEL 20-V (D-S) MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.14W (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
재고15,360
MOSFET (Metal Oxide)
20 V
5A (Ta)
4.5V, 10V
3V @ 250µA
30 nC @ 10 V
-
±20V
-
1.14W (Ta)
30mOhm @ 6.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
SQ4470EY-T1_BE3
Vishay Siliconix

MOSFET N-CH 60V 16A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: -
재고7,377
MOSFET (Metal Oxide)
60 V
16A (Tc)
6V, 10V
3.5V @ 250µA
68 nC @ 10 V
3165 pF @ 25 V
±20V
-
7.1W (Tc)
12mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
SQ2308CES-T1_BE3
Vishay Siliconix

MOSFET N-CH 60V 2.3A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고204,576
MOSFET (Metal Oxide)
60 V
2.3A (Tc)
4.5V, 10V
2.5V @ 250µA
5.3 nC @ 10 V
205 pF @ 30 V
±20V
-
2W (Tc)
150mOhm @ 2.3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SUD23N06-31-BE3
Vishay Siliconix

MOSFET N-CH 60V 9.1A/21.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고5,970
MOSFET (Metal Oxide)
60 V
9.1A (Ta), 21.4A (Tc)
4.5V, 10V
3V @ 250µA
17 nC @ 10 V
670 pF @ 25 V
±20V
-
5.7W (Ta), 31.25W (Tc)
31mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRLZ14PBF-BE3
Vishay Siliconix

MOSFET N-CH 60V 10A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
재고5,193
MOSFET (Metal Oxide)
60 V
10A (Tc)
-
2V @ 250µA
8.4 nC @ 5 V
400 pF @ 25 V
±10V
-
43W (Tc)
200mOhm @ 6A, 5V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SQJQ142E-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 460A PPAK 8 X 8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6975 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: PowerPAK® 8 x 8
패키지: -
재고3,600
MOSFET (Metal Oxide)
40 V
460A (Tc)
10V
3.5V @ 250µA
130 nC @ 10 V
6975 pF @ 25 V
±20V
-
500W (Tc)
1.24mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
SIR668ADP-T1-RE3
Vishay Siliconix

MOSFET N-CH 100V 93.6A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 93.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고8,112
MOSFET (Metal Oxide)
100 V
93.6A (Tc)
7.5V, 10V
4V @ 250µA
81 nC @ 10 V
3750 pF @ 50 V
±20V
-
104W (Tc)
4.8mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SUD50N04-8M8P-4BE3
Vishay Siliconix

MOSFET N-CH 40V 14A/50A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 48.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
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MOSFET (Metal Oxide)
40 V
14A (Ta), 50A (Tc)
4.5V, 10V
3V @ 250µA
56 nC @ 10 V
2400 pF @ 20 V
±20V
-
3.1W (Ta), 48.1W (Tc)
8.8mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SISS30LDN-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 16A/55.5A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
패키지: -
재고32,643
MOSFET (Metal Oxide)
80 V
16A (Ta), 55.5A (Tc)
4.5V, 10V
2.5V @ 250µA
50 nC @ 10 V
2070 pF @ 40 V
±20V
-
4.8W (Ta), 57W (Tc)
8.5mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
SIHF520STRL-GE3
Vishay Siliconix

MOSFET N-CH 100V 9.2A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
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MOSFET (Metal Oxide)
100 V
9.2A (Tc)
10V
4V @ 250µA
16 nC @ 10 V
360 pF @ 25 V
±20V
-
3.7W (Ta), 60W (Tc)
270mOhm @ 5.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRLR110TRPBF-BE3
Vishay Siliconix

N-CHANNEL 100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
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MOSFET (Metal Oxide)
100 V
4.3A (Tc)
4V, 5V
2V @ 250µA
6.1 nC @ 5 V
250 pF @ 25 V
±10V
-
2.5W (Ta), 25W (Tc)
540mOhm @ 2.6A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SQJ186EP-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 80 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고8,307
MOSFET (Metal Oxide)
80 V
60A (Tc)
10V
3.5V @ 250µA
36 nC @ 10 V
1942 pF @ 25 V
±20V
-
135W (Tc)
15mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SI2319CDS-T1-BE3
Vishay Siliconix

MOSFET P-CH 40V 3.1A/4.4A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
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MOSFET (Metal Oxide)
40 V
3.1A (Ta), 4.4A (Tc)
4.5V, 10V
2.5V @ 250µA
21 nC @ 10 V
595 pF @ 20 V
±20V
-
1.25W (Ta), 2.5W (Tc)
77mOhm @ 3.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SI7454FDP-T1-RE3
Vishay Siliconix

N-CHANNEL 100-V (D-S) MOSFET POW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 29.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고23,445
MOSFET (Metal Oxide)
100 V
7.2A (Ta), 23.5A (Tc)
4.5V, 10V
2.4V @ 250µA
26.5 nC @ 10 V
1110 pF @ 50 V
±20V
-
3.6W (Ta), 39W (Tc)
29.5mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SUD09P10-195-BE3
Vishay Siliconix

MOSFET P-CH 100V 8.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고7,653
MOSFET (Metal Oxide)
100 V
8.8A (Tc)
4.5V, 10V
2.5V @ 250µA
34.8 nC @ 10 V
1055 pF @ 50 V
±20V
-
2.5W (Ta), 32.1W (Tc)
195mOhm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHU5N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 4.4A TO251AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: -
재고8,985
MOSFET (Metal Oxide)
800 V
4.4A (Tc)
10V
4V @ 250µA
16.5 nC @ 10 V
321 pF @ 100 V
±30V
-
62.5W (Tc)
1.35Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
SIDR500EP-T1-RE3
Vishay Siliconix

N-CHANNEL 30 V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 94A (Ta), 421A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
  • Vgs (Max): +16V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8DC
  • Package / Case: PowerPAK® SO-8
패키지: -
재고17,550
MOSFET (Metal Oxide)
30 V
94A (Ta), 421A (Tc)
4.5V, 10V
2.2V @ 250µA
180 nC @ 10 V
8960 pF @ 15 V
+16V, -12V
-
7.5W (Ta), 150W (Tc)
0.47mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8DC
PowerPAK® SO-8
SIA485DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 150V 1.6A PPAK SC70

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 15.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6
  • Package / Case: PowerPAK® SC-70-6
패키지: -
재고33,657
MOSFET (Metal Oxide)
150 V
1.6A (Tc)
6V, 10V
4.5V @ 250µA
6.3 nC @ 10 V
155 pF @ 75 V
±20V
-
15.6W (Tc)
2.6Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
SQJ420EP-T1_BE3
Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고17,322
MOSFET (Metal Oxide)
40 V
30A (Tc)
4.5V, 10V
2.5V @ 250µA
41 nC @ 10 V
1860 pF @ 25 V
±20V
-
45W (Tc)
10mOhm @ 9.7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8