페이지 20 - Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 815
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 4,844
페이지  20/173
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SIHD1K4N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 4.2A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
4.2A (Tc)
10V
5V @ 250µA
7.5 nC @ 10 V
172 pF @ 100 V
±30V
-
63W (Tc)
1.45Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIJH112E-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 23A/225A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 225A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: 8-PowerTDFN
패키지: -
재고4,530
MOSFET (Metal Oxide)
100 V
23A (Ta), 225A (Tc)
-
4V @ 250µA
160 nC @ 10 V
8050 pF @ 50 V
±20V
-
3.3W (Ta), 333W (Tc)
2.8mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8
8-PowerTDFN
SIHF22N60E-E3
Vishay Siliconix

MOSFET N-CH 600V 21A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
21A (Tc)
-
4V @ 250µA
86 nC @ 10 V
1920 pF @ 100 V
-
-
-
180mOhm @ 11A, 10V
-
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
SIHB055N60EF-GE3
Vishay Siliconix

EF SERIES POWER MOSFET WITH FAST

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3707 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 26.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고2,955
MOSFET (Metal Oxide)
600 V
46A (Tc)
10V
5V @ 250µA
95 nC @ 10 V
3707 pF @ 100 V
±30V
-
278W (Tc)
55mOhm @ 26.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIS698DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 6.9A PPAK1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 19.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
패키지: -
Request a Quote
MOSFET (Metal Oxide)
100 V
6.9A (Tc)
6V, 10V
3.5V @ 250µA
8 nC @ 10 V
210 pF @ 50 V
±20V
-
19.8W (Tc)
195mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SI1480BDH-T1-GE3
Vishay Siliconix

N-CHNNEL 100-V (D-S) MOSFET SC70

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
패키지: -
재고17,565
MOSFET (Metal Oxide)
100 V
1.8A (Ta), 2.38A (Tc)
4.5V, 10V
3V @ 250µA
6 nC @ 10 V
206 pF @ 50 V
±20V
-
1.5W (Ta), 2.6W (Tc)
212mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
SIHP22N60AE-BE3
Vishay Siliconix

N-CHANNEL 600V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
재고5,838
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
4V @ 250µA
96 nC @ 10 V
1451 pF @ 100 V
±30V
-
179W (Tc)
180mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHP7N60E-BE3
Vishay Siliconix

N-CHANNEL 600V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
재고5,970
MOSFET (Metal Oxide)
600 V
7A (Tc)
10V
4V @ 250µA
40 nC @ 10 V
680 pF @ 100 V
±30V
-
78W (Tc)
600mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHFR9014-GE3
Vishay Siliconix

MOSFET P-CH 60V 5.1A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
5.1A (Tc)
10V
4V @ 250µA
12 nC @ 10 V
270 pF @ 25 V
±20V
-
2.5W (Ta), 25W (Tc)
500mOhm @ 3.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SI2308BDS-T1-BE3
Vishay Siliconix

N-CHANNEL 60-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
  • Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고6,495
MOSFET (Metal Oxide)
60 V
1.9A (Ta), 2.3A (Tc)
4.5V, 10V
3V @ 250µA
6.8 nC @ 10 V
190 pF @ 30 V
±20V
-
1.09W (Ta), 1.66W (Tc)
156mOhm @ 1.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SQJ401EP-T1_GE3
Vishay Siliconix

MOSFET P-CH 12V 32A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10015 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고1,092
MOSFET (Metal Oxide)
12 V
32A (Tc)
2.5V, 4.5V
1.5V @ 250µA
164 nC @ 4.5 V
10015 pF @ 6 V
±8V
-
83W (Tc)
6mOhm @ 15A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIR878BDP-T1-RE3
Vishay Siliconix

MOSFET N-CH 100V 12A/42.5A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고38,733
MOSFET (Metal Oxide)
100 V
12A (Ta), 42.5A (Tc)
7.5V, 10V
3.4V @ 250µA
38 nC @ 10 V
1850 pF @ 50 V
±20V
-
5W (Ta), 62.5W (Tc)
14.4mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SQ2351ES-T1_BE3
Vishay Siliconix

MOSFET P-CH 20V 3.2A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고34,674
MOSFET (Metal Oxide)
20 V
3.2A (Tc)
2.5V, 4.5V
1.5V @ 250µA
5.5 nC @ 4.5 V
330 pF @ 10 V
±12V
-
2W (Tc)
115mOhm @ 2.4A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SQ2360EES-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 4.4A TO236

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
4.4A (Tc)
-
2.5V @ 250µA
12 nC @ 10 V
370 pF @ 25 V
-
-
-
85mOhm @ 6A, 10V
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SIDR402EP-T1-RE3
Vishay Siliconix

N-CHANNEL 40 V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8DC
  • Package / Case: PowerPAK® SO-8
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
65.2A (Ta), 291A (Tc)
4.5V, 10V
2.3V @ 250µA
165 nC @ 10 V
9100 pF @ 20 V
+20V, -16V
-
7.5W (Ta), 150W (Tc)
0.88mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8DC
PowerPAK® SO-8
SIHD11N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 8A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
800 V
8A (Tc)
10V
4V @ 250µA
42 nC @ 10 V
804 pF @ 100 V
±30V
-
78W (Tc)
450mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SI2333DS-T1-BE3
Vishay Siliconix

P-CHANNEL 12-V (D-S) MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고3,780
MOSFET (Metal Oxide)
12 V
4.1A (Ta)
1.8V, 4.5V
1V @ 250µA
18 nC @ 4.5 V
1100 pF @ 6 V
±8V
-
750mW (Ta)
32mOhm @ 5.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SIHA125N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 11A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고2,976
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
5V @ 250µA
47 nC @ 10 V
1533 pF @ 100 V
±30V
-
179W (Tc)
125mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
SI3457CDV-T1-BE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 5.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3W (Tc)
  • Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
재고17,313
MOSFET (Metal Oxide)
30 V
4.1A (Ta), 5.1A (Tc)
4.5V, 10V
3V @ 250µA
15 nC @ 10 V
450 pF @ 15 V
±20V
-
2W (Ta), 3W (Tc)
74mOhm @ 4.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
SISS32ADN-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 17.4A/63A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
패키지: -
재고43,440
MOSFET (Metal Oxide)
80 V
17.4A (Ta), 63A (Tc)
7.5V, 10V
3.6V @ 250µA
36 nC @ 10 V
1520 pF @ 40 V
±20V
-
5W (Ta), 65.7W (Tc)
7.3mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
SIHG11N80E-GE3
Vishay Siliconix

MOSFET N-CH 800V 12A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
800 V
12A (Tc)
10V
4V @ 250µA
88 nC @ 10 V
1670 pF @ 100 V
±30V
-
179W (Tc)
440mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SQJ420EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 30A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고3,129
MOSFET (Metal Oxide)
40 V
30A (Tc)
4.5V, 10V
2.5V @ 250µA
41 nC @ 10 V
1860 pF @ 25 V
±20V
-
45W (Tc)
10mOhm @ 9.7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SQJ433EP-T1_BE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) 175C MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고17,991
MOSFET (Metal Oxide)
30 V
75A (Tc)
4.5V, 10V
2.5V @ 250µA
108 nC @ 10 V
4877 pF @ 15 V
±20V
-
83W (Tc)
8.1mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SUD80460E-BE3
Vishay Siliconix

MOSFET N-CH 150V 42A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
150 V
42A (Tc)
10V
4V @ 250µA
16 nC @ 10 V
560 pF @ 50 V
±20V
-
65.2W (Tc)
44.7mOhm @ 8.3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHF530-GE3
Vishay Siliconix

MOSFET N-CH 100V 14A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
100 V
14A (Tc)
10V
4V @ 250µA
26 nC @ 10 V
670 pF @ 25 V
±20V
-
88W (Tc)
160mOhm @ 8.4A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHG155N60EF-GE3
Vishay Siliconix

EF SERIES POWER MOSFET WITH FAST

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 149mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
패키지: -
재고2,955
MOSFET (Metal Oxide)
600 V
21A (Tc)
10V
5V @ 250µA
38 nC @ 10 V
1465 pF @ 100 V
±20V
-
179W (Tc)
149mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHB068N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 41A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고4,050
MOSFET (Metal Oxide)
600 V
41A (Tc)
10V
5V @ 250µA
77 nC @ 10 V
2628 pF @ 100 V
±30V
-
250W (Tc)
68mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQ4483EY-T1_GE3
Vishay Siliconix

MOSFET P-CHANNEL 30V 30A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: -
재고7,395
MOSFET (Metal Oxide)
30 V
30A (Tc)
4.5V, 10V
2.5V @ 250µA
113 nC @ 10 V
4500 pF @ 15 V
±20V
-
7W (Tc)
8.5mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)