이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 150V 2.5A AXIAL
|
패키지: A, Axial |
재고3,872 |
|
150V | 2.5A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 150MA DO204AH
|
패키지: DO-204AH, DO-35, Axial |
재고14,514 |
|
50V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 125V 150MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고7,632 |
|
125V | 150mA | 920mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 4A DO213AA
|
패키지: DO-213AA |
재고37,944 |
|
50V | 4A | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 8A POWERMITE
|
패키지: DO-216AA |
재고600,000 |
|
40V | 8A | 450mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 35V 8A POWERMITE3
|
패키지: Powermite?3 |
재고600,000 |
|
35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | Surface Mount | Powermite?3 | Powermite 3 | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고17,934 |
|
50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 45V 3A DO214AB
|
패키지: DO-214AB, SMC |
재고6,544 |
|
45V | 3A | 520mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 45V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 2A POWERMITE
|
패키지: DO-216AA |
재고7,072 |
|
200V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A DO214BA
|
패키지: DO-214AA, SMB |
재고5,456 |
|
800V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 20µA @ 800V | - | Surface Mount | DO-214AA, SMB | DO-214BA | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 60V 5A DO214AB
|
패키지: DO-214AB, SMC |
재고3,440 |
|
60V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 60V 7A POWERMITE3
|
패키지: Powermite?3 |
재고2,864 |
|
60V | 7A | 600mV @ 7A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 375pF @ 4V, 1MHz | Surface Mount | Powermite?3 | Powermite 3 | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 60V 3A POWERMITE3
|
패키지: Powermite?3 |
재고3,392 |
|
60V | 3A | 630mV @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | 130pF @ 4V, 1MHz | Surface Mount | Powermite?3 | Powermite 3 | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 5A POWERMITE3
|
패키지: Powermite?3 |
재고80,004 |
|
40V | 5A | 540mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 250pF @ 4V, 1MHz | Surface Mount | Powermite?3 | Powermite 3 | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 1A DO214AA
|
패키지: DO-214AA, SMB |
재고4,800 |
|
40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 1A POWERMITE1
|
패키지: DO-216AA |
재고3,376 |
|
40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 60pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 3A B-MELF
|
패키지: SQ-MELF, B |
재고14,952 |
|
1000V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 3A AXIAL
|
패키지: B, Axial |
재고4,704 |
|
1000V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A B-MELF
|
패키지: SQ-MELF, B |
재고9,768 |
|
100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 3A AXIAL
|
패키지: B, Axial |
재고6,108 |
|
50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1A D5A
|
패키지: SQ-MELF, A |
재고11,304 |
|
600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | 25pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A B-MELF
|
패키지: SQ-MELF, B |
재고9,108 |
|
600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 1µA @ 600V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A D5A
|
패키지: SQ-MELF, A |
재고10,956 |
|
200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A D5A
|
패키지: SQ-MELF, A |
재고8,736 |
|
400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 3A B-MELF
|
패키지: SQ-MELF, B |
재고16,692 |
|
400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
패키지: B, Axial |
재고11,616 |
|
100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 3A AXIAL
|
패키지: B, Axial |
재고5,248 |
|
200V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1A AXIAL
|
패키지: A, Axial |
재고8,544 |
|
50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1A AXIAL
|
패키지: A, Axial |
재고11,304 |
|
100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1A D5A
|
패키지: SQ-MELF, A |
재고14,556 |
|
600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |