이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
패키지: A, Axial |
재고22,776 |
|
200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 45V 1A DO213AB
|
패키지: DO-213AB, MELF |
재고7,616 |
|
45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL
|
패키지: A, Axial |
재고11,172 |
|
600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1A D5A
|
패키지: SQ-MELF, A |
재고7,140 |
|
100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 3A AXIAL
|
패키지: B, Axial |
재고6,888 |
|
200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 3A AXIAL
|
패키지: B, Axial |
재고6,272 |
|
800V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL
|
패키지: A, Axial |
재고7,224 |
|
600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A D5A
|
패키지: SQ-MELF, A |
재고5,744 |
|
200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.2KV 60A TO247
|
패키지: TO-247-2 |
재고55,236 |
|
1200V | 60A | 2.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
패키지: A, Axial |
재고5,360 |
|
200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
패키지: A, Axial |
재고7,356 |
|
400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 60A TO247
|
패키지: TO-247-2 |
재고17,640 |
|
1000V | 60A | 2.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 280ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고13,980 |
|
75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.2KV 40A TO247
|
패키지: TO-247-2 |
재고11,376 |
|
1200V | 40A | 3.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 350ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 30A TO247
|
패키지: TO-247-2 |
재고48,600 |
|
400V | 30A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 250µA @ 400V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 60A TO247
|
패키지: TO-247-2 |
재고6,832 |
|
600V | 60A | 2.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 40A TO247
|
패키지: TO-247-2 |
재고9,420 |
|
1000V | 40A | 3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 30A TO247
|
패키지: TO-247-2 |
재고57,744 |
|
600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 3A POWERMITE3
|
패키지: Powermite?3 |
재고14,916 |
|
40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 180pF @ 4V, 1MHz | Surface Mount | Powermite?3 | Powermite 3 | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA D5D
|
패키지: SQ-MELF, D |
재고6,900 |
|
75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 300MA D5D
|
패키지: SQ-MELF, D |
재고23,832 |
|
50V | 300mA | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 1.2KV 36A TO247
|
패키지: TO-247-3 |
재고8,040 |
|
1200V | 36A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 600pF @ 0V, 1MHz | Through Hole | TO-247-3 | TO-247 | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고84,828 |
|
75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
패키지: B, Axial |
재고8,244 |
|
100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1A D5A
|
패키지: SQ-MELF, A |
재고6,912 |
|
50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 50V 33MA DO213AA
|
패키지: DO-213AA |
재고23,352 |
|
50V | 33mA | 410mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A D5A
|
패키지: SQ-MELF, A |
재고7,664 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 70V 33MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고8,904 |
|
70V | 33mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
패키지: B, Axial |
재고10,536 |
|
100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 20V 75MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고780,000 |
|
20V | 75mA | 1V @ 35mA | Small Signal =< 200mA (Io), Any Speed | - | 150nA @ 16V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |