페이지 6 - 트랜지스터 - JFET | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2N5546JTXL01	Vishay Siliconix	JFET N-CH 50V TO-71 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-71-6 Supplier Device Package: TO-71	패키지: TO-71-6	재고7,120	-	-	-	-	-	-	-	-	-	Through Hole	TO-71-6	TO-71
2N4860JTXV02	Vishay Siliconix	JFET N-CH 30V TO-206 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고6,528	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2N4339-2	Vishay Siliconix	MOSFET N-CH 50V 1.5MA TO-206AA FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고6,176	50V	-	500µA @ 15V	-	600mV @ 100nA	7pF @ 15V	-	300mW	-55°C ~ 175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
TF408-2-TL-H	ON Semiconductor	JFET N-CH 10MA 30MW USFP FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V Current Drain (Id) - Max: 10mA Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Resistance - RDS(On): - Power - Max: 30mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-USFP	패키지: 3-SMD, Flat Leads	재고6,864	-	-	600µA @ 10V	10mA	180mV @ 1µA	4pF @ 10V	-	30mW	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-USFP
P1086_D74Z	Fairchild/ON Semiconductor	JFET P-CH 30V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V Resistance - RDS(On): 75 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고7,872	30V	-	10mA @ 20V	-	10V @ 1µA	45pF @ 15V	75 Ohm	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J112RLRA	ON Semiconductor	JFET N-CH 35V 0.35W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 50 Ohm Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,568	35V	-	5mA @ 15V	-	1V @ 1µA	-	50 Ohm	350mW	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
J176_D26Z	Fairchild/ON Semiconductor	JFET P-CH 30V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 250 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,672	30V	-	2mA @ 15V	-	1V @ 10nA	-	250 Ohm	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BF246A	Fairchild/ON Semiconductor	JFET N-CH 30V 0.35W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고7,728	30V	-	30mA @ 15V	-	600mV @ 100nA	-	-	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N5116JTX02	Vishay Siliconix	JFET P-CH 30V TO-18 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고5,040	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2N4859	Microsemi Corporation	N CHANNEL JFET FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 25 Ohm Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: TO-206AA, TO-18-3 Metal Can	재고4,272	30V	30V	175mA @ 15V	-	10V @ 500pA	18pF @ 10V	25 Ohm	360mW	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2N4092UB	Microsemi Corporation	JFET N-CHAN 40V 3SMD FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 50 Ohm Power - Max: 360mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-UB (3.09x2.45)	패키지: 3-SMD, No Lead	재고7,408	40V	40V	15mA @ 20V	-	-	16pF @ 20V	50 Ohm	360mW	-65°C ~ 175°C (TJ)	Surface Mount	3-SMD, No Lead	3-UB (3.09x2.45)
2N4392	Microsemi Corporation	N CHANNEL JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,656	-	-	-	-	-	-	-	-	-	-	-	-
BF246B	Central Semiconductor Corp	SCR FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,360	-	-	-	-	-	-	-	-	-	-	-	-
MQ2N4393UB-TR	Microchip Technology	JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
2SK303-3-TB-E	onsemi	NCH J-FET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
2N4221A	NTE Electronics, Inc	JFET N-CH 30V 15MA TO72 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V Current Drain (Id) - Max: 15 mA Voltage - Cutoff (VGS off) @ Id: 6 V @ 100 pA Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V Resistance - RDS(On): 400 Ohms Power - Max: 300 mW Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: -	Request a Quote	30 V	30 V	2 mA @ 15 V	15 mA	6 V @ 100 pA	6pF @ 15V	400 Ohms	300 mW	175°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
MV2N4859UB-TR	Microchip Technology	JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
2N4416AUB	Microchip Technology	JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
LSBF510-SOT-23-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 30V 10MA SOT23-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V Current Drain (Id) - Max: 10 mA Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V Resistance - RDS(On): - Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	재고11,808	30 V	30 V	200 µA @ 15 V	10 mA	300 mV @ 10 nA	4.5pF @ 15V	-	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
MQ2N5114UB-TR	Microchip Technology	JFET P-CH 30V UB FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Resistance - RDS(On): 75 Ohms Power - Max: 500 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	30 mA @ 18 V	-	5 V @ 1 nA	25pF @ 15V	75 Ohms	500 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
MQ2N4392	Microchip Technology	JFET N-CH TO18 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
SMP5484	InterFET	JFET N-Channel -25V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 25 V Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Resistance - RDS(On): 320 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	25 V	2.5 mA @ 15 V	-	1.5 V @ 10 nA	3.5pF @ 15V	320 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
2N5116UA-TR	Microchip Technology	JFET P-CH 30V UA FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Resistance - RDS(On): 175 Ohms Power - Max: 500 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	패키지: -	Request a Quote	30 V	30 V	5 mA @ 15 V	-	1 V @ 1 nA	27pF @ 15V	175 Ohms	500 mW	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
LS845-SOIC-8L	Linear Integrated Systems, Inc.	JFET 2N-CH 60V 8SOIC FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V Resistance - RDS(On): - Power - Max: 400 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고285	60 V	-	1.5 mA @ 15 V	-	1 V @ 1 nA	8pF @ 15V	-	400 mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTE456	NTE Electronics, Inc	JFET N-CH 30V 15MA TO72 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V Current Drain (Id) - Max: 15 mA Voltage - Cutoff (VGS off) @ Id: 6 V @ 100 pA Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V Resistance - RDS(On): 400 Ohms Power - Max: 300 mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: -	Request a Quote	30 V	30 V	2 mA @ 15 V	15 mA	6 V @ 100 pA	6pF @ 15V	400 Ohms	300 mW	150°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
LS5912C-TO-71-6L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 25V TO71 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 25 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Resistance - RDS(On): - Power - Max: 500 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-71-6 Metal Can Supplier Device Package: TO-71	패키지: -	재고1,488	25 V	-	7 mA @ 10 V	-	1 V @ 1 nA	5pF @ 10V	-	500 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-71-6 Metal Can	TO-71
SST112-SOT-23-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 35V SOT23-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Resistance - RDS(On): 50 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	재고14,910	35 V	-	-	-	-	12pF @ 10V	50 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
LSK189-TO-92-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 60V TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V Resistance - RDS(On): - Power - Max: 300 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	재고3,024	60 V	-	2.5 mA @ 15 V	-	1.5 V @ 1 nA	8pF @ 15V	-	300 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92

2N5546JTXL01

Vishay Siliconix

JFET N-CH 50V TO-71

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-71-6
Supplier Device Package: TO-71

패키지: TO-71-6

재고7,120

-

Through Hole

TO-71-6

TO-71

2N4860JTXV02

Vishay Siliconix

JFET N-CH 30V TO-206

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고6,528

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2N4339-2

Vishay Siliconix

MOSFET N-CH 50V 1.5MA TO-206AA

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 50V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고6,176

50V

-

500µA @ 15V

-

600mV @ 100nA

7pF @ 15V

-

300mW

-55°C ~ 175°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

TF408-2-TL-H

ON Semiconductor

JFET N-CH 10MA 30MW USFP

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
Current Drain (Id) - Max: 10mA
Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Resistance - RDS(On): -
Power - Max: 30mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-USFP

패키지: 3-SMD, Flat Leads

재고6,864

-

600µA @ 10V

10mA

180mV @ 1µA

4pF @ 10V

-

30mW

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-USFP

P1086_D74Z

Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
Resistance - RDS(On): 75 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고7,872

30V

-

10mA @ 20V

-

10V @ 1µA

45pF @ 15V

75 Ohm

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

J112RLRA

ON Semiconductor

JFET N-CH 35V 0.35W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 50 Ohm
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,568

35V

-

5mA @ 15V

-

1V @ 1µA

-

50 Ohm

350mW

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

J176_D26Z

Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 250 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,672

30V

-

2mA @ 15V

-

1V @ 10nA

-

250 Ohm

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BF246A

Fairchild/ON Semiconductor

JFET N-CH 30V 0.35W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고7,728

30V

-

30mA @ 15V

-

600mV @ 100nA

-

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N5116JTX02

Vishay Siliconix

JFET P-CH 30V TO-18

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고5,040

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2N4859

Microsemi Corporation

N CHANNEL JFET

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 25 Ohm
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: TO-206AA, TO-18-3 Metal Can

재고4,272

30V

175mA @ 15V

-

10V @ 500pA

18pF @ 10V

25 Ohm

360mW

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

2N4092UB

Microsemi Corporation

JFET N-CHAN 40V 3SMD

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 50 Ohm
Power - Max: 360mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-UB (3.09x2.45)

패키지: 3-SMD, No Lead

재고7,408

40V

15mA @ 20V

-

16pF @ 20V

50 Ohm

360mW

-65°C ~ 175°C (TJ)

Surface Mount

3-SMD, No Lead

3-UB (3.09x2.45)

2N4392

Microsemi Corporation

N CHANNEL JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,656

-

BF246B

Central Semiconductor Corp

SCR

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,360

-

MQ2N4393UB-TR

Microchip Technology

JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SK303-3-TB-E

onsemi

NCH J-FET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N4221A

NTE Electronics, Inc

JFET N-CH 30V 15MA TO72

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Current Drain (Id) - Max: 15 mA
Voltage - Cutoff (VGS off) @ Id: 6 V @ 100 pA
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Resistance - RDS(On): 400 Ohms
Power - Max: 300 mW
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: -

Request a Quote

30 V

2 mA @ 15 V

15 mA

6 V @ 100 pA

6pF @ 15V

400 Ohms

300 mW

175°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

MV2N4859UB-TR

Microchip Technology

JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N4416AUB

Microchip Technology

JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

LSBF510-SOT-23-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 30V 10MA SOT23-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
Current Drain (Id) - Max: 10 mA
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Resistance - RDS(On): -
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

재고11,808

30 V

200 µA @ 15 V

10 mA

300 mV @ 10 nA

4.5pF @ 15V

-

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

MQ2N5114UB-TR

Microchip Technology

JFET P-CH 30V UB

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Resistance - RDS(On): 75 Ohms
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

30 mA @ 18 V

-

5 V @ 1 nA

25pF @ 15V

75 Ohms

500 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

MQ2N4392

Microchip Technology

JFET N-CH TO18

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: -

Request a Quote

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

SMP5484

InterFET

JFET N-Channel -25V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 25 V
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Resistance - RDS(On): 320 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

25 V

2.5 mA @ 15 V

-

1.5 V @ 10 nA

3.5pF @ 15V

320 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

2N5116UA-TR

Microchip Technology

JFET P-CH 30V UA

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Resistance - RDS(On): 175 Ohms
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

패키지: -

Request a Quote

30 V

5 mA @ 15 V

-

1 V @ 1 nA

27pF @ 15V

175 Ohms

500 mW

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

LS845-SOIC-8L

Linear Integrated Systems, Inc.

JFET 2N-CH 60V 8SOIC

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Resistance - RDS(On): -
Power - Max: 400 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고285

60 V

-

1.5 mA @ 15 V

-

1 V @ 1 nA

8pF @ 15V

-

400 mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NTE456

NTE Electronics, Inc

JFET N-CH 30V 15MA TO72

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Current Drain (Id) - Max: 15 mA
Voltage - Cutoff (VGS off) @ Id: 6 V @ 100 pA
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Resistance - RDS(On): 400 Ohms
Power - Max: 300 mW
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: -

Request a Quote

30 V

2 mA @ 15 V

15 mA

6 V @ 100 pA

6pF @ 15V

400 Ohms

300 mW

150°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

LS5912C-TO-71-6L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 25V TO71

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 25 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Resistance - RDS(On): -
Power - Max: 500 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-71-6 Metal Can
Supplier Device Package: TO-71

패키지: -

재고1,488

25 V

-

7 mA @ 10 V

-

1 V @ 1 nA

5pF @ 10V

-

500 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-71-6 Metal Can

TO-71

SST112-SOT-23-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 35V SOT23-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Resistance - RDS(On): 50 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

재고14,910

35 V

-

12pF @ 10V

50 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

LSK189-TO-92-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 60V TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Resistance - RDS(On): -
Power - Max: 300 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

재고3,024

60 V

-

2.5 mA @ 15 V

-

1.5 V @ 1 nA

8pF @ 15V

-

300 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92