트랜지스터 - JFET | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MX2N4392UB	Microsemi Corporation	N CHANNEL JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,552	-	-	-	-	-	-	-	-	-	-	-	-
2N5114UB	Microsemi Corporation	P CHANNEL JFET FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 90mA @ 18V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Resistance - RDS(On): 75 Ohm Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: 3-SMD, No Lead	재고2,880	30V	30V	90mA @ 18V	-	10V @ 1nA	25pF @ 15V	75 Ohm	500mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
TF262TH-5-TL-H	ON Semiconductor	JFET N-CH 1MA 100MW FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 2V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 200mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 2V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: VTFP	패키지: 3-SMD, Flat Leads	재고3,920	-	-	210µA @ 2V	1mA	200mV @ 1µA	3.5pF @ 2V	-	100mW	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	VTFP
U291	Vishay Siliconix	JFET N-CH 30V 0.5W TO-206AC FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V Resistance - RDS(On): 7 Ohm Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AC, TO-52-3 Metal Can Supplier Device Package: TO-206AC (TO-52)	패키지: TO-206AC, TO-52-3 Metal Can	재고12,336	30V	-	200mA @ 10V	-	1.5V @ 3nA	160pF @ 0V	7 Ohm	500mW	-55°C ~ 150°C (TJ)	Through Hole	TO-206AC, TO-52-3 Metal Can	TO-206AC (TO-52)
SST4118-T1-E3	Vishay Siliconix	JFET N-CH 70V 80UA SOT-23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고97,824	40V	-	80µA @ 10V	-	1V @ 1nA	3pF @ 10V	-	350mW	-55°C ~ 175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2N4416	Vishay Siliconix	JFET N-CH 30V 0.3W TO-206AF FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-206AF (TO-72)	패키지: TO-206AF, TO-72-4 Metal Can	재고32,892	30V	-	5mA @ 15V	-	3V @ 1nA	4pF @ 15V	-	300mW	-50°C ~ 150°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-206AF (TO-72)
2N4391-E3	Vishay Siliconix	MOSFET N-CH 40V .1NA TO-18 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 30 Ohm Power - Max: 1.8W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고3,312	40V	-	50mA @ 20V	-	4V @ 1nA	14pF @ 20V	30 Ohm	1.8W	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2SK715V-AC	ON Semiconductor	JFET N-CH 50MA 300MW SPA FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 15V Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V Current Drain (Id) - Max: 50mA Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: 125°C (TJ) Mounting Type: Through Hole Package / Case: SC-72 Supplier Device Package: 3-SPA	패키지: SC-72	재고2,976	-	15V	10mA @ 5V	50mA	600mV @ 100µA	10pF @ 5V	-	300mW	125°C (TJ)	Through Hole	SC-72	3-SPA
2N4093UB	Microsemi Corporation	JFET N-CHAN 40V 3SMD FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 80 Ohm Power - Max: 360mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-UB (3.09x2.45)	패키지: 3-SMD, No Lead	재고4,912	40V	40V	8mA @ 20V	-	-	16pF @ 20V	80 Ohm	360mW	-65°C ~ 175°C (TJ)	Surface Mount	3-SMD, No Lead	3-UB (3.09x2.45)
2N3823	Microsemi Corporation	N CHANNEL JFET FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 8V @ 500pA Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: TO-206AF, TO-72-4 Metal Can	재고3,328	30V	30V	20mA @ 15V	-	8V @ 500pA	6pF @ 15V	-	300mW	-55°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
2SK2394-7-TB-E	ON Semiconductor	JFET N-CH 50MA 200MW CP FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 15V Current - Drain (Idss) @ Vds (Vgs=0): 16mA @ 5V Current Drain (Id) - Max: 50mA Voltage - Cutoff (VGS off) @ Id: 300mV @ 100µA Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Resistance - RDS(On): - Power - Max: 200mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	패키지: TO-236-3, SC-59, SOT-23-3	재고117,972	-	15V	16mA @ 5V	50mA	300mV @ 100µA	10pF @ 5V	-	200mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
BFR31,235	NXP	JFET N-CH 10MA 250MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V Current Drain (Id) - Max: 10mA Voltage - Cutoff (VGS off) @ Id: 2.5V @ 0.5nA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Resistance - RDS(On): - Power - Max: 250mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	패키지: TO-236-3, SC-59, SOT-23-3	재고5,088	-	25V	1mA @ 10V	10mA	2.5V @ 0.5nA	4pF @ 10V	-	250mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)
2SK880GRTE85LF	Toshiba Semiconductor and Storage	JFET N-CH 50V 0.1W USM FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	패키지: SC-70, SOT-323	재고50,250	50V	-	2.6mA @ 10V	-	1.5V @ 100nA	13pF @ 10V	-	100mW	125°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
2N5457	Central Semiconductor Corp	JFET N-CH 25V 0.31W TO-92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 310mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고102,144	25V	25V	1mA @ 15V	-	500mV @ 10nA	7pF @ 15V	-	310mW	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
MMBFJ175LT1	onsemi	SS P-CHAN 25V SOT23 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
LS845-TO-71-6L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 60V TO71 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V Resistance - RDS(On): - Power - Max: 400 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-71-6 Metal Can Supplier Device Package: TO-71	패키지: -	재고1,500	60 V	-	1.5 mA @ 15 V	-	1 V @ 1 nA	8pF @ 15V	-	400 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-71-6 Metal Can	TO-71
LS846-TO-92-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 60V TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V Resistance - RDS(On): - Power - Max: 300 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	재고3,018	60 V	-	1.5 mA @ 15 V	-	1 V @ 1 nA	8pF @ 15V	-	300 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
IF140AST3	InterFET	JFET N-Channel -20V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 20 V Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3 V @ 5 nA Input Capacitance (Ciss) (Max) @ Vds: 1.8pF @ 15V Resistance - RDS(On): 220 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	20 V	7 mA @ 15 V	-	3 V @ 5 nA	1.8pF @ 15V	220 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
MX2N4856UB-TR	Microchip Technology	JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SMP4416	InterFET	JFET N-Channel -30V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Resistance - RDS(On): 180 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	30 V	8 mA @ 15 V	-	3 V @ 1 nA	3.5pF @ 15V	180 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
MV2N5116UB-TR	Microchip Technology	JFET P-CH 30V UB FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Resistance - RDS(On): 175 Ohms Power - Max: 500 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	5 mA @ 15 V	-	1 V @ 1 nA	27pF @ 15V	175 Ohms	500 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
CMPF4392-TR-PBFREE	Central Semiconductor Corp	JFET N-CH 40V SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 60 Ohms Power - Max: 350 mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고852	40 V	40 V	25 mA @ 20 V	-	2 V @ 1 nA	14pF @ 20V	60 Ohms	350 mW	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2N4393-TO-18-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 40V TO18-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 100 Ohms Power - Max: 1.8 W Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18-3	패키지: -	재고1,488	40 V	-	5 mA @ 20 V	-	500 mV @ 1 nA	14pF @ 20V	100 Ohms	1.8 W	-55°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18-3
SST309-SOT-23-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 25V SOT23-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Resistance - RDS(On): 35 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	재고11,721	25 V	-	-	-	-	4pF @ 10V	35 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
NTE489	NTE Electronics, Inc	JFET P-CH 30V TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 15V Resistance - RDS(On): - Power - Max: 360 mW Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	30 V	-	2 mA @ 15 V	-	500 mV @ 1 nA	32pF @ 15V	-	360 mW	-55°C ~ 135°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
SD5000I-S-B-DIP-16L-ROHS	Linear Integrated Systems, Inc.	QUAD HIGH SPEED N-CHANNEL LATERA FET Type: 4 N-Channel Voltage - Breakdown (V(BR)GSS): 20 V Drain to Source Voltage (Vdss): 20 V Current - Drain (Idss) @ Vds (Vgs=0): 900 pA @ 20 V Current Drain (Id) - Max: 50 mA Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 70 Ohms Power - Max: 500 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	패키지: -	재고60	20 V	20 V	900 pA @ 20 V	50 mA	-	-	70 Ohms	500 mW	-55°C ~ 150°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-DIP
2N3955A	Harris Corporation	JFET 2N-CH 50V TO71 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 50 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-71-6 Metal Can Supplier Device Package: TO-71	패키지: -	Request a Quote	50 V	-	-	-	-	-	-	-	-	Through Hole	TO-71-6 Metal Can	TO-71
J202-TO-92-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 40V TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 900 µA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V Resistance - RDS(On): - Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	재고2,790	40 V	-	900 µA @ 20 V	-	800 mV @ 10 nA	4.5pF @ 15V	-	350 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92

MX2N4392UB

Microsemi Corporation

N CHANNEL JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,552

-

2N5114UB

Microsemi Corporation

P CHANNEL JFET

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 90mA @ 18V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Resistance - RDS(On): 75 Ohm
Power - Max: 500mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: 3-SMD, No Lead

재고2,880

30V

90mA @ 18V

-

10V @ 1nA

25pF @ 15V

75 Ohm

500mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

TF262TH-5-TL-H

ON Semiconductor

JFET N-CH 1MA 100MW

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 2V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 200mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 2V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: VTFP

패키지: 3-SMD, Flat Leads

재고3,920

-

210µA @ 2V

1mA

200mV @ 1µA

3.5pF @ 2V

-

100mW

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

VTFP

U291

Vishay Siliconix

JFET N-CH 30V 0.5W TO-206AC

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Resistance - RDS(On): 7 Ohm
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Supplier Device Package: TO-206AC (TO-52)

패키지: TO-206AC, TO-52-3 Metal Can

재고12,336

30V

-

200mA @ 10V

-

1.5V @ 3nA

160pF @ 0V

7 Ohm

500mW

-55°C ~ 150°C (TJ)

Through Hole

TO-206AC, TO-52-3 Metal Can

TO-206AC (TO-52)

SST4118-T1-E3

Vishay Siliconix

JFET N-CH 70V 80UA SOT-23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고97,824

40V

-

80µA @ 10V

-

1V @ 1nA

3pF @ 10V

-

350mW

-55°C ~ 175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2N4416

Vishay Siliconix

JFET N-CH 30V 0.3W TO-206AF

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-206AF (TO-72)

패키지: TO-206AF, TO-72-4 Metal Can

재고32,892

30V

-

5mA @ 15V

-

3V @ 1nA

4pF @ 15V

-

300mW

-50°C ~ 150°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-206AF (TO-72)

2N4391-E3

Vishay Siliconix

MOSFET N-CH 40V .1NA TO-18

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 30 Ohm
Power - Max: 1.8W
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고3,312

40V

-

50mA @ 20V

-

4V @ 1nA

14pF @ 20V

30 Ohm

1.8W

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2SK715V-AC

ON Semiconductor

JFET N-CH 50MA 300MW SPA

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 15V
Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V
Current Drain (Id) - Max: 50mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-72
Supplier Device Package: 3-SPA

패키지: SC-72

재고2,976

-

15V

10mA @ 5V

50mA

600mV @ 100µA

10pF @ 5V

-

300mW

125°C (TJ)

Through Hole

SC-72

3-SPA

2N4093UB

Microsemi Corporation

JFET N-CHAN 40V 3SMD

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 80 Ohm
Power - Max: 360mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-UB (3.09x2.45)

패키지: 3-SMD, No Lead

재고4,912

40V

8mA @ 20V

-

16pF @ 20V

80 Ohm

360mW

-65°C ~ 175°C (TJ)

Surface Mount

3-SMD, No Lead

3-UB (3.09x2.45)

2N3823

Microsemi Corporation

N CHANNEL JFET

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 8V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: TO-206AF, TO-72-4 Metal Can

재고3,328

30V

20mA @ 15V

-

8V @ 500pA

6pF @ 15V

-

300mW

-55°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

2SK2394-7-TB-E

ON Semiconductor

JFET N-CH 50MA 200MW CP

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 15V
Current - Drain (Idss) @ Vds (Vgs=0): 16mA @ 5V
Current Drain (Id) - Max: 50mA
Voltage - Cutoff (VGS off) @ Id: 300mV @ 100µA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Resistance - RDS(On): -
Power - Max: 200mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

패키지: TO-236-3, SC-59, SOT-23-3

재고117,972

-

15V

16mA @ 5V

50mA

300mV @ 100µA

10pF @ 5V

-

200mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

BFR31,235

NXP

JFET N-CH 10MA 250MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V
Current Drain (Id) - Max: 10mA
Voltage - Cutoff (VGS off) @ Id: 2.5V @ 0.5nA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Resistance - RDS(On): -
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)

패키지: TO-236-3, SC-59, SOT-23-3

재고5,088

-

25V

1mA @ 10V

10mA

2.5V @ 0.5nA

4pF @ 10V

-

250mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (TO-236AB)

2SK880GRTE85LF

Toshiba Semiconductor and Storage

JFET N-CH 50V 0.1W USM

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 50V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

패키지: SC-70, SOT-323

재고50,250

50V

-

2.6mA @ 10V

-

1.5V @ 100nA

13pF @ 10V

-

100mW

125°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70

2N5457

Central Semiconductor Corp

JFET N-CH 25V 0.31W TO-92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 310mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고102,144

25V

1mA @ 15V

-

500mV @ 10nA

7pF @ 15V

-

310mW

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

MMBFJ175LT1

onsemi

SS P-CHAN 25V SOT23

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

LS845-TO-71-6L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 60V TO71

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Resistance - RDS(On): -
Power - Max: 400 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-71-6 Metal Can
Supplier Device Package: TO-71

패키지: -

재고1,500

60 V

-

1.5 mA @ 15 V

-

1 V @ 1 nA

8pF @ 15V

-

400 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-71-6 Metal Can

TO-71

LS846-TO-92-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 60V TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Resistance - RDS(On): -
Power - Max: 300 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

재고3,018

60 V

-

1.5 mA @ 15 V

-

1 V @ 1 nA

8pF @ 15V

-

300 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

IF140AST3

InterFET

JFET N-Channel -20V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 20 V
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3 V @ 5 nA
Input Capacitance (Ciss) (Max) @ Vds: 1.8pF @ 15V
Resistance - RDS(On): 220 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

20 V

7 mA @ 15 V

-

3 V @ 5 nA

1.8pF @ 15V

220 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

MX2N4856UB-TR

Microchip Technology

JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SMP4416

InterFET

JFET N-Channel -30V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Resistance - RDS(On): 180 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

30 V

8 mA @ 15 V

-

3 V @ 1 nA

3.5pF @ 15V

180 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

MV2N5116UB-TR

Microchip Technology

JFET P-CH 30V UB

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Resistance - RDS(On): 175 Ohms
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

5 mA @ 15 V

-

1 V @ 1 nA

27pF @ 15V

175 Ohms

500 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

CMPF4392-TR-PBFREE

Central Semiconductor Corp

JFET N-CH 40V SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고852

40 V

25 mA @ 20 V

-

2 V @ 1 nA

14pF @ 20V

60 Ohms

350 mW

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2N4393-TO-18-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 40V TO18-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 100 Ohms
Power - Max: 1.8 W
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18-3

패키지: -

재고1,488

40 V

-

5 mA @ 20 V

-

500 mV @ 1 nA

14pF @ 20V

100 Ohms

1.8 W

-55°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18-3

SST309-SOT-23-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 25V SOT23-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Resistance - RDS(On): 35 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

재고11,721

25 V

-

4pF @ 10V

35 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

NTE489

NTE Electronics, Inc

JFET P-CH 30V TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 15V
Resistance - RDS(On): -
Power - Max: 360 mW
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

Request a Quote

30 V

-

2 mA @ 15 V

-

500 mV @ 1 nA

32pF @ 15V

-

360 mW

-55°C ~ 135°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

SD5000I-S-B-DIP-16L-ROHS

Linear Integrated Systems, Inc.

QUAD HIGH SPEED N-CHANNEL LATERA

FET Type: 4 N-Channel
Voltage - Breakdown (V(BR)GSS): 20 V
Drain to Source Voltage (Vdss): 20 V
Current - Drain (Idss) @ Vds (Vgs=0): 900 pA @ 20 V
Current Drain (Id) - Max: 50 mA
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 70 Ohms
Power - Max: 500 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

패키지: -

재고60

20 V

900 pA @ 20 V

50 mA

-

70 Ohms

500 mW

-55°C ~ 150°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-DIP

2N3955A

Harris Corporation

JFET 2N-CH 50V TO71

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 50 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-71-6 Metal Can
Supplier Device Package: TO-71

패키지: -

Request a Quote

50 V

-

Through Hole

TO-71-6 Metal Can

TO-71

J202-TO-92-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 40V TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 900 µA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Resistance - RDS(On): -
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

재고2,790

40 V

-

900 µA @ 20 V

-

800 mV @ 10 nA

4.5pF @ 15V

-

350 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92