페이지 97 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  97/148
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRGB4086PBF
Infineon Technologies

IGBT 300V 70A 160W TO220AB

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 36ns/112ns
  • Test Condition: 196V, 25A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고15,000
300V
70A
-
2.96V @ 15V, 120A
160W
-
Standard
65nC
36ns/112ns
196V, 25A, 10 Ohm
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
SKB06N60HSATMA1
Infineon Technologies

IGBT 600V 12A 68W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 6A
  • Power - Max: 68W
  • Switching Energy: 190µJ
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 11ns/196ns
  • Test Condition: 400V, 6A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,184
600V
12A
24A
3.15V @ 15V, 6A
68W
190µJ
Standard
33nC
11ns/196ns
400V, 6A, 50 Ohm, 15V
100ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IHW40T60FKSA1
Infineon Technologies

IGBT 600V 80A 303W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
  • Power - Max: 303W
  • Switching Energy: 920µJ
  • Input Type: Standard
  • Gate Charge: 215nC
  • Td (on/off) @ 25°C: -/186ns
  • Test Condition: 400V, 40A, 5.6 Ohm, 15V
  • Reverse Recovery Time (trr): 143ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고3,856
600V
80A
120A
2.05V @ 15V, 40A
303W
920µJ
Standard
215nC
-/186ns
400V, 40A, 5.6 Ohm, 15V
143ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRGI4085-111PBF
Infineon Technologies

IGBT 330V 28A 38W TO220ABFP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 28V, 15A
  • Power - Max: 38W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 48ns/180ns
  • Test Condition: 196V, 25A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고6,672
330V
28A
-
1.5V @ 28V, 15A
38W
-
Standard
84nC
48ns/180ns
196V, 25A, 10 Ohm
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IRGP4050PBF
Infineon Technologies

IGBT 250V 104A 330W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Current - Collector (Ic) (Max): 104A
  • Current - Collector Pulsed (Icm): 208A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 330W
  • Switching Energy: 45µJ (on), 125µJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 37ns/120ns
  • Test Condition: 180V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고2,064
250V
104A
208A
1.9V @ 15V, 30A
330W
45µJ (on), 125µJ (off)
Standard
230nC
37ns/120ns
180V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG4BC10S
Infineon Technologies

IGBT 600V 14A 38W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 2.58mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 25ns/630ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고3,312
600V
14A
18A
1.8V @ 15V, 8A
38W
140µJ (on), 2.58mJ (off)
Standard
15nC
25ns/630ns
480V, 8A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IXGH30N60A
IXYS

IGBT 600V 50A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고93,360
600V
50A
-
3V @ 15V, 30A
200W
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGH12N60CD1
IXYS

IGBT 600V 24A 100W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 20ns/60ns
  • Test Condition: 480V, 12A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고3,392
600V
24A
48A
2.7V @ 15V, 12A
100W
90µJ (off)
Standard
32nC
20ns/60ns
480V, 12A, 18 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGP16N60B2
IXYS

IGBT 600V 40A 150W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
  • Power - Max: 150W
  • Switching Energy: 160µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 18ns/73ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고6,592
600V
40A
100A
1.95V @ 15V, 12A
150W
160µJ (on), 120µJ (off)
Standard
24nC
18ns/73ns
400V, 12A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
HGTG11N120CN
Fairchild/ON Semiconductor

IGBT 1200V 43A 298W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
  • Power - Max: 298W
  • Switching Energy: 400µJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 23ns/180ns
  • Test Condition: 960V, 11A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고5,968
1200V
43A
80A
2.4V @ 15V, 11A
298W
400µJ (on), 1.3mJ (off)
Standard
100nC
23ns/180ns
960V, 11A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot IXGH32N60BU1
IXYS

IGBT 600V 60A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
  • Power - Max: 200W
  • Switching Energy: 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 25ns/100ns
  • Test Condition: 480V, 32A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고130,800
600V
60A
120A
2.3V @ 15V, 32A
200W
600µJ (off)
Standard
110nC
25ns/100ns
480V, 32A, 4.7 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot IXGH24N60B
IXYS

IGBT 600V 48A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 600µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 480V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고18,084
600V
48A
96A
2.3V @ 15V, 24A
150W
600µJ (on), 800µJ (off)
Standard
90nC
25ns/150ns
480V, 24A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IKB15N60TATMA1
Infineon Technologies

IGBT 600V 30A 130W TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
  • Power - Max: 130W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 17ns/188ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO-263
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,824
600V
30A
45A
2.05V @ 15V, 15A
130W
570µJ
Standard
87nC
17ns/188ns
400V, 15A, 15 Ohm, 15V
34ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO-263
IXGX75N250
IXYS

IGBT 2500V 170A 780W PLUS247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): 530A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
  • Power - Max: 780W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 410nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고2,064
2500V
170A
530A
3.6V @ 15V, 150A
780W
-
Standard
410nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXBH28N170A
IXYS

IGBT 1700V 30A 300W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 14A
  • Power - Max: 300W
  • Switching Energy: 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: 35ns/265ns
  • Test Condition: 850V, 14A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 360ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
패키지: TO-247-3
재고3,568
1700V
30A
60A
6V @ 15V, 14A
300W
1.2mJ (off)
Standard
105nC
35ns/265ns
850V, 14A, 10 Ohm, 15V
360ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXBH)
STGWA40H65DFB
STMicroelectronics

IGBT TRENCH 650V 80A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 283W
  • Switching Energy: 498µJ (on), 363µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 40ns/142ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 62ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: TO-247-3
재고6,464
650V
80A
160A
2V @ 15V, 40A
283W
498µJ (on), 363µJ (off)
Standard
210nC
40ns/142ns
400V, 40A, 5 Ohm, 15V
62ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
hot IRG4PSC71KDPBF
Infineon Technologies

IGBT 600V 85A 350W SUPER247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 350W
  • Switching Energy: 3.95mJ (on), 2.33mJ (off)
  • Input Type: Standard
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: 82ns/282ns
  • Test Condition: 480V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 82ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-274AA
  • Supplier Device Package: SUPER-247 (TO-274AA)
패키지: TO-274AA
재고11,100
600V
85A
200A
2.3V @ 15V, 60A
350W
3.95mJ (on), 2.33mJ (off)
Standard
340nC
82ns/282ns
480V, 60A, 5 Ohm, 15V
82ns
-55°C ~ 150°C (TJ)
Through Hole
TO-274AA
SUPER-247 (TO-274AA)
FGPF4565
Fairchild/ON Semiconductor

IGBT 650V 30W TO-220F

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 170A
  • Vce(on) (Max) @ Vge, Ic: 1.88V @ 15V, 30A
  • Power - Max: 30W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40.3nC
  • Td (on/off) @ 25°C: 11.2ns/40.8ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: TO-220-3 Full Pack
재고8,376
650V
-
170A
1.88V @ 15V, 30A
30W
-
Standard
40.3nC
11.2ns/40.8ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
hot STGP10NC60HD
STMicroelectronics

IGBT 600V 20A 65W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
  • Power - Max: 65W
  • Switching Energy: 31.8µJ (on), 95µJ (off)
  • Input Type: Standard
  • Gate Charge: 19.2nC
  • Td (on/off) @ 25°C: 14.2ns/72ns
  • Test Condition: 390V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고32,232
600V
20A
30A
2.5V @ 15V, 5A
65W
31.8µJ (on), 95µJ (off)
Standard
19.2nC
14.2ns/72ns
390V, 5A, 10 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot FGA50S110P
Fairchild/ON Semiconductor

IGBT 1100V 50A 300W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1100V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 195nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고103,944
1100V
50A
120A
2.6V @ 15V, 50A
300W
-
Standard
195nC
-
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IRG4PC50FD-EPBF
Infineon Technologies

IGBT 600V 70A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
  • Power - Max: 200W
  • Switching Energy: 1.5mJ (on), 2.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 55ns/240ns
  • Test Condition: 480V, 39A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고13,272
600V
70A
280A
1.6V @ 15V, 39A
200W
1.5mJ (on), 2.4mJ (off)
Standard
190nC
55ns/240ns
480V, 39A, 5 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IHW40N60RFKSA1
Infineon Technologies

IGBT TRENCH 600V 80A TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
  • Power - Max: 305 W
  • Switching Energy: 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 223 nC
  • Td (on/off) @ 25°C: -/193ns
  • Test Condition: 400V, 40A, 5.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
패키지: -
Request a Quote
600 V
80 A
120 A
2.05V @ 15V, 40A
305 W
750µJ (off)
Standard
223 nC
-/193ns
400V, 40A, 5.6Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
IXGT64N60B3
IXYS

IGBT PT 600V 64A TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 64 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 460 W
  • Switching Energy: 1.5mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 168 nC
  • Td (on/off) @ 25°C: 25ns/138ns
  • Test Condition: 480V, 50A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 41 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: -
Request a Quote
600 V
64 A
400 A
1.8V @ 15V, 50A
460 W
1.5mJ (on), 1mJ (off)
Standard
168 nC
25ns/138ns
480V, 50A, 3Ohm, 15V
41 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
FGA20S125P-SN00336
onsemi

IGBT 1250V 20A 250W TO-3PN

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1250 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 250 W
  • Switching Energy: 740µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 153 nC
  • Td (on/off) @ 25°C: 10ns/400ns
  • Test Condition: 600V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: -
Request a Quote
1250 V
40 A
60 A
2.5V @ 15V, 20A
250 W
740µJ (on), 500µJ (off)
Standard
153 nC
10ns/400ns
600V, 20A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IXYP30N65B3D1
IXYS

IGBT 650V 30A TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-220-3
TO-220AB
IKD15N60RC2ATMA1
Infineon Technologies

IGBT TRENCH FS 600V 28A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 28 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
  • Power - Max: 115.4 W
  • Switching Energy: 570µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 72 nC
  • Td (on/off) @ 25°C: 18ns/374ns
  • Test Condition: 400V, 15A, 49Ohm, 15V
  • Reverse Recovery Time (trr): 129 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: -
재고13,224
600 V
28 A
45 A
2.3V @ 15V, 15A
115.4 W
570µJ (on), 350µJ (off)
Standard
72 nC
18ns/374ns
400V, 15A, 49Ohm, 15V
129 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
MGP4N60E
onsemi

IGBT, 6A, 600V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKZA75N120CH7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 109A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 109 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 549 W
  • Switching Energy: 2.01mJ (on), 1.76mJ (off)
  • Input Type: Standard
  • Gate Charge: 550 nC
  • Td (on/off) @ 25°C: 40ns/359ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 95 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-U02
패키지: -
재고510
1200 V
109 A
300 A
2.15V @ 15V, 75A
549 W
2.01mJ (on), 1.76mJ (off)
Standard
550 nC
40ns/359ns
-
95 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-U02
FGH40T65SQD_F155
onsemi

650V FS4 TRENCH IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 238 W
  • Switching Energy: 138µJ (on), 52µJ (off)
  • Input Type: Standard
  • Gate Charge: 80 nC
  • Td (on/off) @ 25°C: 16.4ns/86.4ns
  • Test Condition: 400V, 10A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 31.8 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
Request a Quote
650 V
80 A
160 A
2.1V @ 15V, 40A
238 W
138µJ (on), 52µJ (off)
Standard
80 nC
16.4ns/86.4ns
400V, 10A, 6Ohm, 15V
31.8 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGH50T65SQD-F155
onsemi

IGBT TRENCH FS 650V 100A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 268 W
  • Switching Energy: 180µJ (on), 45µJ (off)
  • Input Type: Standard
  • Gate Charge: 99 nC
  • Td (on/off) @ 25°C: 22ns/105ns
  • Test Condition: 400V, 12.5A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 31 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고1,179
650 V
100 A
200 A
2.1V @ 15V, 50A
268 W
180µJ (on), 45µJ (off)
Standard
99 nC
22ns/105ns
400V, 12.5A, 4.7Ohm, 15V
31 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3