페이지 96 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  96/148
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PH46U-EP
Infineon Technologies

IGBT 1200V 108A TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 130A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 469W
  • Switching Energy: 2.56mJ (on), 1.78mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 45ns/410ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고4,864
1200V
130A
160A
2V @ 15V, 40A
469W
2.56mJ (on), 1.78mJ (off)
Standard
220nC
45ns/410ns
600V, 40A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRG4BC30F-STRRP
Infineon Technologies

IGBT 600V 31A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 230µJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,584
600V
31A
120A
1.8V @ 15V, 17A
100W
230µJ (on), 1.18mJ (off)
Standard
51nC
21ns/200ns
480V, 17A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4RC10K
Infineon Technologies

IGBT 600V 9A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 160µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 11ns/51ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,456
600V
9A
18A
2.62V @ 15V, 5A
38W
160µJ (on), 100µJ (off)
Standard
19nC
11ns/51ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
RJH1BG7RDPK-00#T0
Renesas Electronics America

IGBT 1100V 60A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,080
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RJP5001APP-M0#T2
Renesas Electronics America

IGBT 500V TO-220FN

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 10V @ 12V, 300A
  • Power - Max: 45W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 100ns/200ns
  • Test Condition: 300V, 300A, 30 Ohm, 12V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FL
패키지: TO-220-3 Full Pack
재고3,744
500V
-
300A
10V @ 12V, 300A
45W
-
Standard
-
100ns/200ns
300V, 300A, 30 Ohm, 12V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FL
IXGR40N60C2G1
IXYS

IGBT 600V ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고4,176
600V
-
-
-
-
-
Standard
-
-
-
-
-
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGP20N60B
IXYS

IGBT 600V 40A 150W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 150µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 15ns/150ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고7,456
600V
40A
80A
2V @ 15V, 20A
150W
150µJ (on), 700µJ (off)
Standard
90nC
15ns/150ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
HGT1S2N120CN
Fairchild/ON Semiconductor

IGBT 1200V 13A 104W I2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
  • Power - Max: 104W
  • Switching Energy: 96µJ (on), 355µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 25ns/205ns
  • Test Condition: 960V, 2.6A, 51 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고7,200
1200V
13A
20A
2.4V @ 15V, 2.6A
104W
96µJ (on), 355µJ (off)
Standard
30nC
25ns/205ns
960V, 2.6A, 51 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
FGH50N6S2
Fairchild/ON Semiconductor

IGBT 600V 75A 463W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 260µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 390V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고2,736
600V
75A
240A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
70nC
13ns/55ns
390V, 30A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
AUIRGP35B60PD
Infineon Technologies

IGBT 600V 60A 308W TO247AC

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A
  • Power - Max: 308W
  • Switching Energy: 220µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 26ns/110ns
  • Test Condition: 390V, 22A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고3,200
600V
60A
120A
2.55V @ 15V, 35A
308W
220µJ (on), 215µJ (off)
Standard
160nC
26ns/110ns
390V, 22A, 3.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IGP15N60TXKSA1
Infineon Technologies

IGBT 600V 30A 130W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
  • Power - Max: 130W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 17ns/188ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고3,840
600V
30A
45A
2.05V @ 15V, 15A
130W
570µJ
Standard
87nC
17ns/188ns
400V, 15A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
GA35XCP12-247
GeneSiC Semiconductor

IGBT 1200V SOT247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 35A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 35A
  • Power - Max: -
  • Switching Energy: 2.66mJ (on), 4.35mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 800V, 35A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 36ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AB
패키지: TO-247-3
재고4,224
1200V
-
35A
3V @ 15V, 35A
-
2.66mJ (on), 4.35mJ (off)
Standard
50nC
-
800V, 35A, 22 Ohm, 15V
36ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AB
IXGA8N100
IXYS

IGBT 1000V 16A 54W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 32A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 8A
  • Power - Max: 54W
  • Switching Energy: 2.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 26.5nC
  • Td (on/off) @ 25°C: 15ns/600ns
  • Test Condition: 800V, 8A, 120 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,536
1000V
16A
32A
2.7V @ 15V, 8A
54W
2.3mJ (off)
Standard
26.5nC
15ns/600ns
800V, 8A, 120 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
IRG4BC30FDPBF
Infineon Technologies

IGBT 600V 31A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 124A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 630µJ (on), 1.39mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 42ns/230ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고2,112
600V
31A
124A
1.8V @ 15V, 17A
100W
630µJ (on), 1.39mJ (off)
Standard
51nC
42ns/230ns
480V, 17A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot HGTG18N120BND
Fairchild/ON Semiconductor

IGBT 1200V 54A 390W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A
  • Power - Max: 390W
  • Switching Energy: 1.9mJ (on), 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 23ns/170ns
  • Test Condition: 960V, 18A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 75ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고26,340
1200V
54A
160A
2.7V @ 15V, 18A
390W
1.9mJ (on), 1.8mJ (off)
Standard
165nC
23ns/170ns
960V, 18A, 3 Ohm, 15V
75ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot IRGB30B60KPBF
Infineon Technologies

IGBT 600V 78A 370W TO220AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
  • Power - Max: 370W
  • Switching Energy: 350µJ (on), 825µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 46ns/185ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,488
600V
78A
120A
2.35V @ 15V, 30A
370W
350µJ (on), 825µJ (off)
Standard
102nC
46ns/185ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
RJP60V0DPM-00#T1
Renesas Electronics America

IGBT 600V 45A 40W TO-3PFM

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 22A
  • Power - Max: 40W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 45ns/100ns
  • Test Condition: 300V, 22A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: TO-3PFM, SC-93-3
재고6,012
600V
45A
-
2.1V @ 15V, 22A
40W
-
Standard
75nC
45ns/100ns
300V, 22A, 5 Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
STGD3NB60FT4
STMicroelectronics

IGBT 600V 6A 60W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
  • Power - Max: 60W
  • Switching Energy: 125µJ (off)
  • Input Type: Standard
  • Gate Charge: 16nC
  • Td (on/off) @ 25°C: 12.5ns/105ns
  • Test Condition: 480V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,752
600V
6A
24A
2.4V @ 15V, 3A
60W
125µJ (off)
Standard
16nC
12.5ns/105ns
480V, 3A, 10 Ohm, 15V
45ns
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IKP10N60TXKSA1
Infineon Technologies

IGBT 600V 20A 110W TO220-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
  • Power - Max: 110W
  • Switching Energy: 430µJ
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: 12ns/215ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고8,460
600V
20A
30A
2.05V @ 15V, 10A
110W
430µJ
Standard
62nC
12ns/215ns
400V, 10A, 23 Ohm, 15V
115ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IGB50N60T
Infineon Technologies

IGBT 600V 100A 333W TO263-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 333W
  • Switching Energy: 2.6mJ
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 26ns/299ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,584
600V
100A
150A
2V @ 15V, 50A
333W
2.6mJ
Standard
310nC
26ns/299ns
400V, 50A, 7 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
FGA6065ADF
Fairchild/ON Semiconductor

IGBT 650V 120A 306W TO3P

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 306W
  • Switching Energy: 2.46mJ (on), 520µJ (off)
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 25.6ns/71ns
  • Test Condition: 400V, 60A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 110ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고9,468
650V
120A
180A
2.3V @ 15V, 60A
306W
2.46mJ (on), 520µJ (off)
Standard
84nC
25.6ns/71ns
400V, 60A, 6 Ohm, 15V
110ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
MGP7N60E
onsemi

IGBT, 10A, 600V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FGA20S125P
onsemi

IGBT 1250V 40A 250W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1250 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 250 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 129 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: -
Request a Quote
1250 V
40 A
60 A
2.5V @ 15V, 20A
250 W
-
Standard
129 nC
-
-
-
-
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IKFW40N65DH5XKSA1
Infineon Technologies

HOME APPLIANCES 14 PG-HSIP247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 53 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A
  • Power - Max: 106 W
  • Switching Energy: 1.17mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 18ns/105ns
  • Test Condition: 400V, 40A, 14Ohm, 15V
  • Reverse Recovery Time (trr): 64 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
패키지: -
Request a Quote
650 V
53 A
120 A
2.25V @ 15V, 40A
106 W
1.17mJ (on), 500µJ (off)
Standard
70 nC
18ns/105ns
400V, 40A, 14Ohm, 15V
64 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
IXYH50N65C3D1
IXYS

IGBT 650V 132A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 132 A
  • Current - Collector Pulsed (Icm): 250 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
  • Power - Max: 600 W
  • Switching Energy: 800µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 86 nC
  • Td (on/off) @ 25°C: 20ns/90ns
  • Test Condition: 400V, 36A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 36 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
패키지: -
Request a Quote
650 V
132 A
250 A
2.1V @ 15V, 36A
600 W
800µJ (on), 800µJ (off)
Standard
86 nC
20ns/90ns
400V, 36A, 5Ohm, 15V
36 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
MIWP75N120DH1Y-BP
Micro Commercial Co

IGBT TRENCH FS 1200V 150A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
  • Power - Max: 600 W
  • Switching Energy: 7.3mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 650 nC
  • Td (on/off) @ 25°C: 23ns/227ns
  • Test Condition: 600V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
Request a Quote
1200 V
150 A
300 A
2.5V @ 15V, 75A
600 W
7.3mJ (on), 2.2mJ (off)
Standard
650 nC
23ns/227ns
600V, 75A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
HGTP10N40EID
Harris Corporation

17.5A, 400V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AOTF10B65MQ2
Alpha & Omega Semiconductor Inc.

IGBT 10A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
  • Power - Max: 30 W
  • Switching Energy: 180µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 24 nC
  • Td (on/off) @ 25°C: 12ns/91ns
  • Test Condition: 400V, 10A, 30Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: -
Request a Quote
650 V
20 A
30 A
2V @ 15V, 10A
30 W
180µJ (on), 130µJ (off)
Standard
24 nC
12ns/91ns
400V, 10A, 30Ohm, 15V
100 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
HGTD7N60B3S
Harris Corporation

14A, 600V, UFS N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 14 A
  • Current - Collector Pulsed (Icm): 56 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
  • Power - Max: 60 W
  • Switching Energy: 72µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 37 nC
  • Td (on/off) @ 25°C: 26ns/130ns
  • Test Condition: 480V, 7A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: -
Request a Quote
600 V
14 A
56 A
2.1V @ 15V, 7A
60 W
72µJ (on), 120µJ (off)
Standard
37 nC
26ns/130ns
480V, 7A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
IKW50N120CS7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 82A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 82 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 428 W
  • Switching Energy: 2.8mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 290 nC
  • Td (on/off) @ 25°C: 29ns/170ns
  • Test Condition: 600V, 50A, 2.3Ohm, 15V
  • Reverse Recovery Time (trr): 165 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: -
재고1,347
1200 V
82 A
150 A
2V @ 15V, 50A
428 W
2.8mJ (on), 2.2mJ (off)
Standard
290 nC
29ns/170ns
600V, 50A, 2.3Ohm, 15V
165 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3