페이지 134 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  134/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA070601EV4R250XTMA1
Infineon Technologies

FET RF LDMOS 60W H36265-2

  • Transistor Type: LDMOS
  • Frequency: 760MHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36265-2
패키지: 2-Flatpack, Fin Leads
재고3,392
760MHz
19.5dB
28V
-
-
600mA
60W
65V
2-Flatpack, Fin Leads
H-36265-2
PTFA181001EV4XWSA1
Infineon Technologies

IC FET RF LDMOS 100W H-36248-2

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 100W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
패키지: 2-Flatpack, Fin Leads
재고4,720
1.88GHz
16.5dB
28V
1µA
-
750mA
100W
65V
2-Flatpack, Fin Leads
H-36248-2
BF5020WE6327HTSA1
Infineon Technologies

MOSFET N-CH 8V 25MA SOT-343

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 26dB
  • Voltage - Test: 5V
  • Current Rating: 25mA
  • Noise Figure: 1.2dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고7,632
800MHz
26dB
5V
25mA
1.2dB
10mA
-
8V
SC-82A, SOT-343
PG-SOT343-4
NE3516S02-A
CEL

IC HJ-FET RF N-CH S02 4-MICROX

  • Transistor Type: N-Channel GaAs HJ-FET
  • Frequency: 12GHz
  • Gain: 14dB
  • Voltage - Test: 2V
  • Current Rating: 60mA
  • Noise Figure: 0.35dB
  • Current - Test: 10mA
  • Power - Output: 165mW
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S02
패키지: 4-SMD, Flat Leads
재고5,760
12GHz
14dB
2V
60mA
0.35dB
10mA
165mW
4V
4-SMD, Flat Leads
S02
ON5421,127
NXP

MOSFET RF TO220AB TO220AB

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고7,472
-
-
-
-
-
-
-
-
TO-220-3
TO-220AB
MRF8S9260HR5
NXP

FET RF 70V 960MHZ NI-880H

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.7A
  • Power - Output: 75W
  • Voltage - Rated: 70V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고2,960
960MHz
18.6dB
28V
-
-
1.7A
75W
70V
NI-880
NI-880
MRF6S9130HSR5
NXP

FET RF 68V 880MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 68V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고2,720
880MHz
19.2dB
28V
-
-
950mA
27W
68V
NI-780S
NI-780S
MRF6S19100MBR1
NXP

FET RF 68V 1.99GHZ TO272-4

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 22W
  • Voltage - Rated: 68V
  • Package / Case: TO-272-4
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272-4
재고5,504
1.99GHz
14.5dB
28V
-
-
950mA
22W
68V
TO-272-4
TO-272 WB-4
MRF5S21090HSR5
NXP

FET RF 65V 2.11GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 19W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고4,368
2.11GHz
14.5dB
28V
-
-
850mA
19W
65V
NI-780S
NI-780S
hot MRF5S19100HSR3
NXP

FET RF 65V 1.99GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 13.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 22W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고7,212
1.93GHz ~ 1.99GHz
13.9dB
28V
-
-
1A
22W
65V
NI-780S
NI-780S
BF904AWR,115
NXP

MOSFET N-CH 7V 30MA SOT143R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 200MHz
  • Gain: -
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 1dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
패키지: SC-82A, SOT-343
재고7,808
200MHz
-
5V
30mA
1dB
10mA
-
7V
SC-82A, SOT-343
CMPAK-4
BLF6G10L-260PRN,11
Ampleon USA Inc.

RF FET LDMOS 65V 22DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 917.5MHz ~ 962.5MHz
  • Gain: 22dB
  • Voltage - Test: 28V
  • Current Rating: 64A
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고7,296
917.5MHz ~ 962.5MHz
22dB
28V
64A
-
1.8A
40W
65V
SOT539A
SOT539A
PTAB182002FCV1R0XTMA1
Infineon Technologies

IC RF FET LDMOS 190W H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 520mA
  • Power - Output: 29W
  • Voltage - Rated: 65V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: H-37248-4
재고4,496
1.88GHz
15.5dB
28V
10µA
-
520mA
29W
65V
H-37248-4
H-37248-4
BLF8G24LS-200PNU
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.74A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
패키지: SOT539B
재고6,448
2.3GHz ~ 2.4GHz
17.2dB
28V
-
-
1.74A
60W
65V
SOT539B
SOT539B
A2T18S162W31GSR3
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 1.84GHz
  • Gain: 20.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: NI-780GS-2L2LA
  • Supplier Device Package: NI-780GS-2L2LA
패키지: NI-780GS-2L2LA
재고5,536
1.84GHz
20.1dB
28V
-
-
1A
32W
65V
NI-780GS-2L2LA
NI-780GS-2L2LA
BLP10H6120PY
Ampleon USA Inc.

BLP10H6120P/SOT1223/REELDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,504
-
-
-
-
-
-
-
-
-
-
PD85035C
STMicroelectronics

FET RF 40V 945MHZ M243

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 17.5dB
  • Voltage - Test: 13.6V
  • Current Rating: 8A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: M243
  • Supplier Device Package: M243
패키지: M243
재고6,272
945MHz
17.5dB
13.6V
8A
-
350mA
15W
40V
M243
M243
VRF150
Microsemi Corporation

MOSFET RF PWR N-CH 50V 150W M174

  • Transistor Type: N-Channel
  • Frequency: 150MHz
  • Gain: 11dB
  • Voltage - Test: 50V
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 150W
  • Voltage - Rated: 170V
  • Package / Case: M174
  • Supplier Device Package: M174
패키지: M174
재고5,520
150MHz
11dB
50V
1mA
-
250mA
150W
170V
M174
M174
NPT25015D
M/A-Com Technology Solutions

HEMT N-CH 28V 23W DC-3GHZ 8SOIC

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 3GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 1.5W
  • Voltage - Rated: 100V
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고6,948
0Hz ~ 3GHz
14dB
28V
5A
-
200mA
1.5W
100V
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC
BLF174XRS,112
Ampleon USA Inc.

RF FET LDMOS 110V 28DB SOT1214B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 28.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 110V
  • Package / Case: SOT-1214B
  • Supplier Device Package: SOT1214B
패키지: SOT-1214B
재고4,576
108MHz
28.5dB
50V
-
-
100mA
600W
110V
SOT-1214B
SOT1214B
A2T27S020NR1
NXP

RF MOSFET LDMOS 28V TO270-2

  • Transistor Type: LDMOS
  • Frequency: 400MHz ~ 2.7GHz
  • Gain: 21dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 185 mA
  • Power - Output: 20W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270-2
  • Supplier Device Package: TO-270-2
패키지: -
Request a Quote
400MHz ~ 2.7GHz
21dB
28 V
10µA
-
185 mA
20W
65 V
TO-270-2
TO-270-2
PXAE213708NB-V1-R2
MACOM Technology Solutions

RF MOSFET LDMOS 29V 8HB2SOF

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.18GHz
  • Gain: 16dB
  • Voltage - Test: 29 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750 mA
  • Power - Output: 54W
  • Voltage - Rated: 65 V
  • Package / Case: PG-HB2SOF-8-1
  • Supplier Device Package: PG-HB2SOF-8-1
패키지: -
Request a Quote
2.11GHz ~ 2.18GHz
16dB
29 V
10µA
-
750 mA
54W
65 V
PG-HB2SOF-8-1
PG-HB2SOF-8-1
PXAC243502FV-V1
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37275-4

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz
  • Gain: 15dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850 mA
  • Power - Output: 68W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275-4
  • Supplier Device Package: H-37275-4
패키지: -
Request a Quote
2.4GHz
15dB
28 V
-
-
850 mA
68W
65 V
H-37275-4
H-37275-4
RF5L15030CB2
STMicroelectronics

RF MOSFET LDMOS 50V GXB

  • Transistor Type: LDMOS
  • Frequency: 1.5GHz
  • Gain: 23.5dB
  • Voltage - Test: 50 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 30W
  • Voltage - Rated: 110 V
  • Package / Case: GXB
  • Supplier Device Package: GXB
패키지: -
Request a Quote
1.5GHz
23.5dB
50 V
1µA
-
200 mA
30W
110 V
GXB
GXB
PXAC261212FC-V1
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 15dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 280 mA
  • Power - Output: 28W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
2.69GHz
15dB
28 V
-
-
280 mA
28W
65 V
H-37248-4
H-37248-4
BLF546
Ampleon USA Inc.

RF MOSFET 28V CDFM4

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 500MHz
  • Gain: 13dB
  • Voltage - Test: 28 V
  • Current Rating: 2mA
  • Noise Figure: -
  • Current - Test: 160 mA
  • Power - Output: 80W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-268A
  • Supplier Device Package: CDFM4
패키지: -
Request a Quote
500MHz
13dB
28 V
2mA
-
160 mA
80W
65 V
SOT-268A
CDFM4
NTE221
NTE Electronics, Inc

RF MOSFET 13V TO72

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: -
  • Gain: 20dB
  • Voltage - Test: 13 V
  • Current Rating: 18mA
  • Noise Figure: 5dB
  • Current - Test: 10 mA
  • Power - Output: -
  • Voltage - Rated: 20 V
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
패키지: -
Request a Quote
-
20dB
13 V
18mA
5dB
10 mA
-
20 V
TO-206AF, TO-72-4 Metal Can
TO-72
GTRB424908FC-1-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT H-37248KC-6

  • Transistor Type: HEMT
  • Frequency: 3.7GHz ~ 4GHz
  • Gain: 12dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 450W
  • Voltage - Rated: 48 V
  • Package / Case: H-37248KC-6/2
  • Supplier Device Package: H-37248KC-6/2
패키지: -
Request a Quote
3.7GHz ~ 4GHz
12dB
-
-
-
-
450W
48 V
H-37248KC-6/2
H-37248KC-6/2