Murata uses the latest silicon process technology to manufacture silicon capacitors with a density of 1.3µF/mm², adding to its portfolio for the mobile and high-performance computing markets. These distribution networks require low impedance over a wide range of bandwidth bands. The extremely low ESL(very little pH) and low ESR(very little mOhm) of these devices support the highest performance of the new distribution network (PDN)
Its 40µm shape allows chip design engineers to embed silicon capacitors as close to the active mold package as possible, thereby reducing the effective path length of the current and thus reducing parasitic effects. Also with the development of digital integrated circuits to provide more functions at low voltage, it is very important to solve the problems such as noise and voltage fluctuation
These multiterminal devices provide a variety of SoC and microprocessor design requirements for multiterminal capacitor networks. Replacing traditional monolithic ceramic capacitors with multi-terminal silicon devices can significantly reduce the total number of capacitors required on the circuit board, thereby improving the compactness of the final design. Fewer capacitors can also completely save BOM and installation costs.
