FM25C160B is a 16kbit nonvolatile memory with advanced ferroelectric technology. The high speed SPI bus is used to enhance the high speed writing capability of F-RAM technology. The industrial temperature range of the equipment is -40℃ to +85℃. Ferroelectric random access memory (F-RAM) is non-volatile and has read/write performance similar to RAM.It provides 151 years of reliable data preservation while eliminating the complexity, overhead, and system-level reliability issues caused by serial flash memory, EEPROM, and other non-volatile memory.
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Unlike serial flash memory and EEPROM, FM25C160B performs writes at bus speeds. There is no write delay. After each byte is successfully transferred to the device, the data is immediately written to the memory array.The next bus cycle can begin without data polling. In addition, the product provides considerable write endurance compared to other non-volatile memory. The FM25C160B can support 1014 read/write cycles, or 100 million times more than the EEPROM.
Ordering Code Definitions
These features make FM25C160B ideal for non-volatile memory applications that require frequent or fast writes. For example, from data collection, where the number of write cycles can be critical, to demanding industrial controls, long write times for serial flash memory or EEPROM can lead to data loss. FM25C160B offers substantial benefits to users of serial EEPROM or flash memory as an alternative to hardware.
