Vishay Semiconductor Diodes Division 제품 - 트랜지스터 - FET, MOSFET - 단일

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
VS-FB180SA10P	Vishay Semiconductor Diodes Division	MOSFET N-CH 100V 180A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 180A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4	패키지: SOT-227-4	재고2,656	MOSFET (Metal Oxide)	100V	180A	10V	4V @ 250µA	380nC @ 10V	10700pF @ 25V	±20V	-	480W (Tc)	6.5 mOhm @ 180A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4
VS-FA38SA50LCP	Vishay Semiconductor Diodes Division	MOSFET N-CH 500V 38A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 38A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고6,320	MOSFET (Metal Oxide)	500V	38A	10V	4V @ 250µA	420nC @ 10V	6900pF @ 25V	±20V	-	500W (Tc)	130 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
FA57SA50LC	Vishay Semiconductor Diodes Division	MOSFET N-CH 500V 57A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 57A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고5,344	MOSFET (Metal Oxide)	500V	57A	10V	4V @ 250µA	338nC @ 10V	10000pF @ 25V	±20V	-	625W (Tc)	80 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
FA38SA50LC	Vishay Semiconductor Diodes Division	MOSFET N-CH 500V 38A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 38A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고6,960	MOSFET (Metal Oxide)	500V	38A	10V	4V @ 250µA	420nC @ 10V	6900pF @ 25V	±20V	-	500W (Tc)	130 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
FB180SA10	Vishay Semiconductor Diodes Division	MOSFET N-CH 100V 180A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 108A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고3,040	MOSFET (Metal Oxide)	100V	180A	10V	4V @ 250µA	380nC @ 10V	10700pF @ 25V	±20V	-	480W (Tc)	6.5 mOhm @ 108A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
VS-FC220SA20	Vishay Semiconductor Diodes Division	MOSFET N-CH 200V 220A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 220A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.1V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 789W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고5,920	MOSFET (Metal Oxide)	200V	220A	10V	5.1V @ 500µA	350nC @ 10V	21000pF @ 50V	±30V	-	789W (Tc)	7 mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
VS-FA72SA50LC	Vishay Semiconductor Diodes Division	MOSFET N-CH 500V 72A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 72A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1136W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고6,400	MOSFET (Metal Oxide)	500V	72A	10V	4V @ 250µA	338nC @ 10V	10000pF @ 25V	±20V	-	1136W (Tc)	80 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
VS-FC80NA20	Vishay Semiconductor Diodes Division	MOSFET N-CH 200V 108A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 108A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10720pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 405W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고7,216	MOSFET (Metal Oxide)	200V	108A	10V	5.5V @ 250µA	161nC @ 10V	10720pF @ 50V	±30V	-	405W (Tc)	14 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	-	SOT-227	SOT-227-4, miniBLOC
VS-FA40SA50LC	Vishay Semiconductor Diodes Division	MOSFET N-CH 500V 40A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고3,904	MOSFET (Metal Oxide)	500V	40A	10V	4V @ 250µA	420nC @ 10V	6900pF @ 25V	±20V	-	543W (Tc)	130 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
VS-FC420SA10	Vishay Semiconductor Diodes Division	POWER MODULE 100V 435A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고4,736	MOSFET (Metal Oxide)	100V	-	10V	-	375nC @ 10V	-	±20V	-	-	-	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
VS-FB190SA10	Vishay Semiconductor Diodes Division	MOSFET N-CH 100V 190A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 568W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 180A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고3,680	MOSFET (Metal Oxide)	100V	190A	10V	4.35V @ 250µA	250nC @ 10V	10700pF @ 25V	±20V	-	568W (Tc)	6.5 mOhm @ 180A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC