페이지 3 - Rohm Semiconductor 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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Rohm Semiconductor 제품 - 트랜지스터 - IGBT - 단일

기록 181
페이지  3/7
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
RGS80TSX2HRC11
Rohm Semiconductor

IGBT TRENCH FLD 1200V 80A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 555 W
  • Switching Energy: 3mJ (on), 3.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 49ns/199ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고531
1200 V
80 A
120 A
2.1V @ 15V, 40A
555 W
3mJ (on), 3.1mJ (off)
Standard
104 nC
49ns/199ns
600V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTV60TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 60A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 194 W
  • Switching Energy: 570µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 64 nC
  • Td (on/off) @ 25°C: 33ns/105ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 95 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
Request a Quote
650 V
60 A
120 A
1.9V @ 15V, 30A
194 W
570µJ (on), 500µJ (off)
Standard
64 nC
33ns/105ns
400V, 30A, 10Ohm, 15V
95 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGSX5TS65EGC11
Rohm Semiconductor

IGBT TRENCH FLD 650V 114A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 114 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 404 W
  • Switching Energy: 3.44mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: 43ns/113ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 116 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,314
650 V
114 A
225 A
2.15V @ 15V, 75A
404 W
3.44mJ (on), 1.9mJ (off)
Standard
79 nC
43ns/113ns
400V, 75A, 10Ohm, 15V
116 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGW50NL65HRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 57A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 57 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 165 W
  • Switching Energy: 110µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 73 nC
  • Td (on/off) @ 25°C: 31ns/119ns
  • Test Condition: 400V, 12.5A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
Request a Quote
650 V
57 A
100 A
1.9V @ 15V, 25A
165 W
110µJ (on), 230µJ (off)
Standard
73 nC
31ns/119ns
400V, 12.5A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
RGS50NL65DHRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 50A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 206 W
  • Switching Energy: 810µJ (on), 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 31 nC
  • Td (on/off) @ 25°C: 28ns/91ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 95 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
Request a Quote
650 V
50 A
75 A
2.1V @ 15V, 25A
206 W
810µJ (on), 650µJ (off)
Standard
31 nC
28ns/91ns
400V, 25A, 10Ohm, 15V
95 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
RGW60TS65CHRC11
Rohm Semiconductor

IGBT 650V 64A TO247N

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 64 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 178 W
  • Switching Energy: 70µJ (on), 220µJ (off)
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 37ns/91ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 34 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,275
650 V
64 A
120 A
1.9V @ 15V, 30A
178 W
70µJ (on), 220µJ (off)
Standard
84 nC
37ns/91ns
400V, 15A, 10Ohm, 15V
34 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGW00TS65EHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 96A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 254 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 141 nC
  • Td (on/off) @ 25°C: 50ns/183ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 90 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,344
650 V
96 A
200 A
1.9V @ 15V, 50A
254 W
-
Standard
141 nC
50ns/183ns
400V, 25A, 10Ohm, 15V
90 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGW40TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 40A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 136 W
  • Switching Energy: 330µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 59 nC
  • Td (on/off) @ 25°C: 33ns/76ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,335
650 V
40 A
80 A
1.9V @ 15V, 20A
136 W
330µJ (on), 300µJ (off)
Standard
59 nC
33ns/76ns
400V, 20A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGS60TS65HRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 56A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 56 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 223 W
  • Switching Energy: 660µJ (on), 810µJ (off)
  • Input Type: Standard
  • Gate Charge: 36 nC
  • Td (on/off) @ 25°C: 28ns/104ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
Request a Quote
650 V
56 A
90 A
2.1V @ 15V, 30A
223 W
660µJ (on), 810µJ (off)
Standard
36 nC
28ns/104ns
400V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGT30TM65DGC9
Rohm Semiconductor

IGBT TRNCH FLD 650V 14A TO220NFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 14 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 32 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: 18ns/64ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 55 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NFM
패키지: -
재고2,802
650 V
14 A
45 A
2.1V @ 15V, 15A
32 W
-
Standard
32 nC
18ns/64ns
400V, 15A, 10Ohm, 15V
55 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NFM
RGTH00TS65GC13
Rohm Semiconductor

IGBT TRENCH FIELD 650V 85A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 85 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 277 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 39ns/143ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고1,794
650 V
85 A
200 A
2.1V @ 15V, 50A
277 W
-
Standard
94 nC
39ns/143ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
RGW80NL65DHRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 83A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 83 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 227 W
  • Switching Energy: 240µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 42ns/148ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
재고3,000
650 V
83 A
160 A
1.9V @ 15V, 40A
227 W
240µJ (on), 330µJ (off)
Standard
110 nC
42ns/148ns
400V, 20A, 10Ohm, 15V
92 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
RGW40TK65DGVC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 27A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 27 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 61 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 59 nC
  • Td (on/off) @ 25°C: 33ns/76ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: -
재고1,350
650 V
27 A
80 A
1.9V @ 15V, 20A
61 W
-
Standard
59 nC
33ns/76ns
400V, 20A, 10Ohm, 15V
92 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
RGS80TSX2DGC11
Rohm Semiconductor

IGBT TRENCH FLD 1200V 80A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 555 W
  • Switching Energy: 3mJ (on), 3.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 49ns/199ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 198 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고762
1200 V
80 A
120 A
2.1V @ 15V, 40A
555 W
3mJ (on), 3.1mJ (off)
Standard
104 nC
49ns/199ns
600V, 40A, 10Ohm, 15V
198 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGWS60TS65GC13
Rohm Semiconductor

IGBT TRENCH FS 650V 51A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 51 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 156 W
  • Switching Energy: 500µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 58 nC
  • Td (on/off) @ 25°C: 32ns/91ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
패키지: -
재고1,800
650 V
51 A
90 A
2V @ 15V, 30A
156 W
500µJ (on), 450µJ (off)
Standard
58 nC
32ns/91ns
400V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
RGTV00TS65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 95A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 95 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 276 W
  • Switching Energy: 1.17mJ (on), 940µJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 41ns/142ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
Request a Quote
650 V
95 A
200 A
1.9V @ 15V, 50A
276 W
1.17mJ (on), 940µJ (off)
Standard
104 nC
41ns/142ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTH00TK65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 35A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 35 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 72 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 39ns/143ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 225 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: -
재고1,344
650 V
35 A
200 A
2.1V @ 15V, 50A
72 W
-
Standard
94 nC
39ns/143ns
400V, 50A, 10Ohm, 15V
225 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
RGW60NL65HRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 67A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 67 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 187 W
  • Switching Energy: 180µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 34ns/122ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
재고3,000
650 V
67 A
120 A
1.9V @ 15V, 30A
187 W
180µJ (on), 250µJ (off)
Standard
84 nC
34ns/122ns
400V, 15A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
RGS00TS65HRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 88A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 88 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 326 W
  • Switching Energy: 1.46mJ (on), 1.29mJ (off)
  • Input Type: Standard
  • Gate Charge: 58 nC
  • Td (on/off) @ 25°C: 36ns/115ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
Request a Quote
650 V
88 A
150 A
2.1V @ 15V, 50A
326 W
1.46mJ (on), 1.29mJ (off)
Standard
58 nC
36ns/115ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGW80TS65CHRC11
Rohm Semiconductor

IGBT 650V 81A TO247N

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 81 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 214 W
  • Switching Energy: 120µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 43ns/145ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 33 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,071
650 V
81 A
160 A
1.9V @ 15V, 40A
214 W
120µJ (on), 340µJ (off)
Standard
110 nC
43ns/145ns
400V, 20A, 10Ohm, 15V
33 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTV00TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 95A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 95 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 276 W
  • Switching Energy: 1.17mJ (on), 940µJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 41ns/142ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 102 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
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650 V
95 A
200 A
1.9V @ 15V, 50A
276 W
1.17mJ (on), 940µJ (off)
Standard
104 nC
41ns/142ns
400V, 50A, 10Ohm, 15V
102 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTH50TS65DGC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 50A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 174 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49 nC
  • Td (on/off) @ 25°C: 27ns/94ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
패키지: -
재고1,800
650 V
50 A
100 A
2.1V @ 15V, 25A
174 W
-
Standard
49 nC
27ns/94ns
400V, 25A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
RGW50TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 50A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 156 W
  • Switching Energy: 390µJ (on), 430µJ (off)
  • Input Type: Standard
  • Gate Charge: 73 nC
  • Td (on/off) @ 25°C: 35ns/102ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,338
650 V
50 A
100 A
1.9V @ 15V, 25A
156 W
390µJ (on), 430µJ (off)
Standard
73 nC
35ns/102ns
400V, 25A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGWX5TS65DHRC11
Rohm Semiconductor

IGBT TRENCH FLD 650V 132A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 132 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
  • Power - Max: 348 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 213 nC
  • Td (on/off) @ 25°C: 62ns/237ns
  • Test Condition: 400V, 37.5A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고996
650 V
132 A
300 A
1.9V @ 15V, 75A
348 W
-
Standard
213 nC
62ns/237ns
400V, 37.5A, 10Ohm, 15V
92 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGPR20NL43HRTL
Rohm Semiconductor

430V 20A, LPDL, IGNITION IGBT FO

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 460 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 5V, 10A
  • Power - Max: 107 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 14 nC
  • Td (on/off) @ 25°C: 170ns/1.3µs
  • Test Condition: 300V, 8A, 100Ohm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
재고3,000
460 V
20 A
-
2V @ 5V, 10A
107 W
-
Standard
14 nC
170ns/1.3µs
300V, 8A, 100Ohm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
RGW80TS65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 78A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 78 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 214 W
  • Switching Energy: 760µJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 44ns/143ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고456
650 V
78 A
160 A
1.9V @ 15V, 40A
214 W
760µJ (on), 720µJ (off)
Standard
110 nC
44ns/143ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTVX2TS65GC11
Rohm Semiconductor

IGBT TRENCH FLD 650V 111A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 111 A
  • Current - Collector Pulsed (Icm): 240 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
  • Power - Max: 319 W
  • Switching Energy: 2.08mJ (on), 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 123 nC
  • Td (on/off) @ 25°C: 49ns/150ns
  • Test Condition: 400V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,254
650 V
111 A
240 A
1.9V @ 15V, 60A
319 W
2.08mJ (on), 1.15mJ (off)
Standard
123 nC
49ns/150ns
400V, 60A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGT50NL65DGTL
Rohm Semiconductor

IGBT TRENCH FIELD 650V 48A LPDS

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 48 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 194 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49 nC
  • Td (on/off) @ 25°C: 27ns/88ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
패키지: -
재고4,146
650 V
48 A
75 A
2.1V @ 15V, 25A
194 W
-
Standard
49 nC
27ns/88ns
400V, 25A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS