페이지 6 - Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 1,247
페이지  6/45
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부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RQ5E030RPTL
Rohm Semiconductor

MOSFET P-CH 30V 3A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
패키지: -
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MOSFET (Metal Oxide)
30 V
3A (Ta)
4V, 10V
2.5V @ 1mA
5.2 nC @ 5 V
480 pF @ 10 V
±20V
-
700mW (Ta)
75mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RSQ035N03HZGTR
Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
재고4,446
MOSFET (Metal Oxide)
30 V
3.5A (Ta)
4V, 10V
2.5V @ 1mA
7.4 nC @ 5 V
290 pF @ 10 V
±20V
-
950mW (Ta)
62mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
R6007JNJGTL
Rohm Semiconductor

MOSFET N-CH 600V 7A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 780mOhm @ 3.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고3,240
MOSFET (Metal Oxide)
600 V
7A (Tc)
15V
7V @ 1mA
17.5 nC @ 15 V
475 pF @ 100 V
±30V
-
96W (Tc)
780mOhm @ 3.5A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RW4C045BCTCL1
Rohm Semiconductor

PCH -20V -4.5A POWER MOSFET: RW4

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1616-7T
  • Package / Case: 6-PowerUFDFN
패키지: -
재고62,220
MOSFET (Metal Oxide)
20 V
4.5A (Ta)
1.8V, 4.5V
1.5V @ 1mA
6.5 nC @ 4.5 V
460 pF @ 10 V
±8V
-
1.5W (Ta)
56mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
DFN1616-7T
6-PowerUFDFN
R6022YNX3C16
Rohm Semiconductor

NCH 600V 22A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 1.8mA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 205W (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
재고2,994
MOSFET (Metal Oxide)
600 V
22A (Tc)
10V, 12V
6V @ 1.8mA
33 nC @ 10 V
1400 pF @ 100 V
±30V
-
205W (Tc)
165mOhm @ 6.5A, 12V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RD3L080SNFRATL
Rohm Semiconductor

MOSFET N-CH 60V 8A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고21,264
MOSFET (Metal Oxide)
60 V
8A (Ta)
4V, 10V
2.5V @ 1mA
9.4 nC @ 10 V
380 pF @ 10 V
±20V
-
15W (Tc)
80mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RQ6E045SNTR
Rohm Semiconductor

MOSFET N-CH 30V 4.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
재고8,991
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
4V, 10V
2.5V @ 1mA
9.5 nC @ 5 V
520 pF @ 10 V
±20V
-
950mW (Ta)
38mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
R6524ENZC8
Rohm Semiconductor

MOSFET N-CH 650V 24A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
패키지: -
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MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
4V @ 750µA
70 nC @ 10 V
1650 pF @ 25 V
±20V
-
74W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6003JND4TL1
Rohm Semiconductor

600V 1.3A SOT-223-3, PRESTOMOS W

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 7.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.15Ohm @ 1.5A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-3
패키지: -
재고12,000
MOSFET (Metal Oxide)
600 V
1.3A (Tc)
15V
7V @ 300µA
8 nC @ 15 V
180 pF @ 100 V
±30V
-
7.8W (Tc)
2.15Ohm @ 1.5A, 15V
150°C (TJ)
Surface Mount
SOT-223-3
TO-261-3
RQ1A070ZPHZGTR
Rohm Semiconductor

AUTOMOTIVE PCH -12V -7A SMALL SI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
패키지: -
재고8,790
MOSFET (Metal Oxide)
12 V
7A (Ta)
1.5V, 4.5V
1V @ 1mA
58 nC @ 4.5 V
7400 pF @ 6 V
±10V
-
1.1W (Ta)
12mOhm @ 7A, 4.5V
150°C (TJ)
Surface Mount
TSMT8
8-SMD, Flat Lead
RW4E045AJTCL1
Rohm Semiconductor

NCH 30V 4.5A POWER MOSFET: RW4E0

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1616-7T
  • Package / Case: 6-PowerUFDFN
패키지: -
재고7,356
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
4 nC @ 4.5 V
450 pF @ 15 V
±12V
-
1.5W (Ta)
40mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
DFN1616-7T
6-PowerUFDFN
SCT4036KW7TL
Rohm Semiconductor

1200V, 40A, 7-PIN SMD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 150W
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7L
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
패키지: -
재고2,388
SiCFET (Silicon Carbide)
1200 V
40A (Tj)
18V
4.8V @ 11.1mA
91 nC @ 18 V
2335 pF @ 800 V
+21V, -4V
-
150W
47mOhm @ 21A, 18V
175°C (TJ)
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
RQ6P020ATTCR
Rohm Semiconductor

PCH -100V -2A POWER MOSFET: RQ6P

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
재고16,155
MOSFET (Metal Oxide)
100 V
2A (Ta)
4.5V, 10V
2.5V @ 1mA
24 nC @ 10 V
760 pF @ 50 V
±20V
-
950mW (Ta)
220mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
R6061YNXC7G
Rohm Semiconductor

NCH 600V 26A, TO-220FM, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고3,000
MOSFET (Metal Oxide)
600 V
26A (Tc)
10V, 12V
6V @ 3.5mA
76 nC @ 10 V
3700 pF @ 100 V
±30V
-
100W (Tc)
60mOhm @ 13A, 12V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6027YNXC7G
Rohm Semiconductor

NCH 600V 14A, TO-220FM, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 135mOhm @ 7A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고3,000
MOSFET (Metal Oxide)
600 V
14A (Tc)
10V, 12V
6V @ 2mA
40 nC @ 10 V
1670 pF @ 100 V
±30V
-
70W (Tc)
135mOhm @ 7A, 12V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6002END3TL1
Rohm Semiconductor

MOSFET N-CH 600V 1.7A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고6,957
MOSFET (Metal Oxide)
600 V
1.7A (Tc)
10V
4V @ 1mA
6.5 nC @ 10 V
65 pF @ 25 V
±20V
-
26W (Tc)
3.4Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT3022KLGC11
Rohm Semiconductor

SICFET N-CH 1200V 95A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 427W
  • Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
패키지: -
재고648
SiCFET (Silicon Carbide)
1200 V
95A (Tc)
18V
5.6V @ 18.2mA
178 nC @ 10 V
2879 pF @ 800 V
+22V, -4V
-
427W
28.6mOhm @ 36A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
R6050JNZC8
Rohm Semiconductor

MOSFET N-CH 600V 50A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 83mOhm @ 25A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
패키지: -
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MOSFET (Metal Oxide)
600 V
50A (Tc)
15V
7V @ 5mA
120 nC @ 15 V
4500 pF @ 100 V
±30V
-
120W (Tc)
83mOhm @ 25A, 15V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6524ENJTL
Rohm Semiconductor

MOSFET N-CH 650V 24A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고282
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
4V @ 750µA
70 nC @ 10 V
1650 pF @ 25 V
±20V
-
245W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6509ENXC7G
Rohm Semiconductor

650V 9A TO-220FM, LOW-NOISE POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고2,982
MOSFET (Metal Oxide)
650 V
9A (Ta)
10V
4V @ 230µA
24 nC @ 10 V
430 pF @ 25 V
±20V
-
48W (Tc)
585mOhm @ 2.8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6524KNXC7G
Rohm Semiconductor

650V 24A TO-220FM, HIGH-SPEED SW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고2,970
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
5V @ 750µA
45 nC @ 10 V
1850 pF @ 25 V
±20V
-
74W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RD3L140SPFRATL
Rohm Semiconductor

MOSFET P-CH 60V 14A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고23,931
MOSFET (Metal Oxide)
60 V
14A (Ta)
4V, 10V
3V @ 1mA
27 nC @ 10 V
1900 pF @ 10 V
±20V
-
20W (Tc)
84mOhm @ 14A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6030JNZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 30A TO247G

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 5.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
패키지: -
재고1,566
MOSFET (Metal Oxide)
600 V
30A (Tc)
15V
7V @ 5.5mA
74 nC @ 15 V
2500 pF @ 100 V
±30V
-
370W (Tc)
143mOhm @ 15A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-247G
TO-247-3
R6024ENZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 24A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 24A, 15V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: -
재고1,800
MOSFET (Metal Oxide)
600 V
24A (Tc)
10V, 15V
-
70 nC @ 15 V
-
±20V
-
245W (Tc)
165mOhm @ 24A, 15V
-
Through Hole
TO-247
TO-247-3
R6524KNZC17
Rohm Semiconductor

MOSFET N-CH 650V 24A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
패키지: -
재고900
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
5V @ 750µA
45 nC @ 10 V
1850 pF @ 25 V
±20V
-
74W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6025JNZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 25A TO247G

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 4.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 306W (Tc)
  • Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
패키지: -
재고1,791
MOSFET (Metal Oxide)
600 V
25A (Tc)
15V
7V @ 4.5mA
57 nC @ 15 V
1900 pF @ 100 V
±30V
-
306W (Tc)
182mOhm @ 12.5A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-247G
TO-247-3
RD3P200SNFRATL
Rohm Semiconductor

MOSFET N-CH 100V 20A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고18,834
MOSFET (Metal Oxide)
100 V
20A (Ta)
4V, 10V
2.5V @ 1mA
55 nC @ 10 V
2100 pF @ 25 V
±20V
-
20W (Tc)
46mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6012JNJGTL
Rohm Semiconductor

MOSFET N-CH 600V 12A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고5,400
MOSFET (Metal Oxide)
600 V
12A (Tc)
15V
7V @ 2.5mA
28 nC @ 15 V
900 pF @ 100 V
±30V
-
160W (Tc)
390mOhm @ 6A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB