페이지 42 - Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 1,247
페이지  42/45
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부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
R5207ANDTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE CPT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,992
MOSFET (Metal Oxide)
525V
7A (Ta)
10V
4.5V @ 1mA
13nC @ 10V
500pF @ 25V
±30V
-
40W (Tc)
1 Ohm @ 3.5A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
RCX050N25
Rohm Semiconductor

MOSFET N-CH 250V 5A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1100 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
패키지: TO-220-2 Full Pack
재고7,216
MOSFET (Metal Oxide)
250V
5A (Ta)
10V
5.5V @ 1mA
9nC @ 10V
410pF @ 25V
±30V
-
30W (Tc)
1100 mOhm @ 2.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
RSJ300N10TL
Rohm Semiconductor

MOSFET N-CH 100V 30A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
패키지: SC-83
재고6,832
MOSFET (Metal Oxide)
100V
30A (Ta)
4V, 10V
2.5V @ 1mA
50nC @ 10V
2200pF @ 25V
±20V
-
50W (Tc)
52 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
R4008ANDTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE CPT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,816
MOSFET (Metal Oxide)
400V
8A (Ta)
10V
4.5V @ 1mA
15nC @ 10V
500pF @ 25V
±30V
-
20W (Tc)
950 mOhm @ 4A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
R5205CNDTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE CPT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,240
MOSFET (Metal Oxide)
525V
5A (Ta)
10V
4.5V @ 1mA
10.8nC @ 10V
320pF @ 25V
±30V
-
40W (Tc)
1.6 Ohm @ 2.5A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
R5005CNJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,840
MOSFET (Metal Oxide)
500V
5A (Ta)
10V
4.5V @ 1mA
10.8nC @ 10V
320pF @ 25V
±30V
-
40W (Tc)
1.6 Ohm @ 2.5A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RSH140N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 14A SOP8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,784
MOSFET (Metal Oxide)
30V
14A (Ta)
4V, 10V
-
-
-
±20V
-
2W (Ta)
-
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
hot RSS130N03FU6TB
Rohm Semiconductor

MOSFET N-CH 30V 13A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 13A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고188,556
MOSFET (Metal Oxide)
30V
13A (Ta)
4V, 10V
2.5V @ 1mA
35nC @ 5V
2000pF @ 10V
20V
-
2W (Ta)
8.1 mOhm @ 13A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RDN050N20FU6
Rohm Semiconductor

MOSFET N-CH 200V 5A TO-220FN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 292pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 720 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FN
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고2,720
MOSFET (Metal Oxide)
200V
5A (Ta)
10V
4V @ 1mA
18.6nC @ 10V
292pF @ 10V
±30V
-
30W (Tc)
720 mOhm @ 2.5A, 10V
150°C (TJ)
Through Hole
TO-220FN
TO-220-3 Full Pack
RRS100P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 10A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC
패키지: 8-SOIC
재고7,728
MOSFET (Metal Oxide)
30V
10A (Ta)
-
-
-
-
-
-
-
-
-
Surface Mount
8-SOIC
8-SOIC
RCJ160N20TL
Rohm Semiconductor

MOSFET N-CH 200V 16A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
패키지: SC-83
재고2,624
MOSFET (Metal Oxide)
200V
16A (Tc)
10V
5.25V @ 1mA
26nC @ 10V
1370pF @ 25V
±30V
-
1.56W (Ta), 40W (Tc)
180 mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
RZY200P01TL
Rohm Semiconductor

MOSFET P-CH 12V 20A TCPT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TCPT3
  • Package / Case: 3-SMD, Flat Leads
패키지: 3-SMD, Flat Leads
재고3,232
MOSFET (Metal Oxide)
12V
20A (Ta)
-
-
-
-
±10V
-
20W (Tc)
-
150°C (TJ)
Surface Mount
TCPT3
3-SMD, Flat Leads
hot RSS075P03FU6TB
Rohm Semiconductor

MOSFET P-CH 30V 7.5A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고25,680
MOSFET (Metal Oxide)
30V
7.5A (Ta)
4V, 10V
2.5V @ 1mA
30nC @ 5V
2900pF @ 10V
±20V
-
2W (Ta)
21 mOhm @ 7.5A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RCD100N20TL
Rohm Semiconductor

MOSFET N-CH 200V 10A CPT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 850mW (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 182 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,104
MOSFET (Metal Oxide)
200V
10A (Tc)
10V
5.25V @ 1mA
25nC @ 10V
1400pF @ 25V
±30V
-
850mW (Ta), 20W (Tc)
182 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot RRH100P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 10A SOP8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 650mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고14,784
MOSFET (Metal Oxide)
30V
10A (Ta)
4V, 10V
2.5V @ 1mA
39nC @ 5V
3600pF @ 10V
±20V
-
650mW (Ta)
12.6 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RSS125N03FU6TB
Rohm Semiconductor

MOSFET N-CH 30V 12.5A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,448
MOSFET (Metal Oxide)
30V
12.5A (Ta)
4V, 10V
2.5V @ 1mA
28nC @ 5V
1670pF @ 10V
20V
-
2W (Ta)
8.9 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RSH125N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 12.5A SOP8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 12.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,048
MOSFET (Metal Oxide)
30V
12.5A (Ta)
4V, 10V
2.5V @ 1mA
28nC @ 5V
1670pF @ 10V
±20V
-
2W (Ta)
9.1 mOhm @ 12.5A, 10V
-
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
hot RSS110N03FU6TB
Rohm Semiconductor

MOSFET N-CH 30V 11A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고210,000
MOSFET (Metal Oxide)
30V
11A (Ta)
4V, 10V
2.5V @ 1mA
17nC @ 5V
1300pF @ 10V
20V
-
2W (Ta)
10.7 mOhm @ 11A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
hot 2SK2094TL
Rohm Semiconductor

MOSFET N-CH 60V 2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고182,400
MOSFET (Metal Oxide)
60V
2A (Ta)
4V, 10V
2.5V @ 1mA
-
400pF @ 10V
±20V
-
20W (Tc)
350 mOhm @ 1A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
RDD020N60TL
Rohm Semiconductor

MOSFET N-CH 600V 2A CPT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,120
MOSFET (Metal Oxide)
600V
2A (Ta)
10V
-
-
-
±30V
-
20W (Tc)
-
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot RSS100N03FU6TB
Rohm Semiconductor

MOSFET N-CH 30V 10A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 10V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고122,004
MOSFET (Metal Oxide)
30V
10A (Ta)
4V, 10V
2.5V @ 1mA
14nC @ 5V
1070pF @ 10V
20V
-
2W (Ta)
13 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RS1G180MNTB
Rohm Semiconductor

MOSFET N-CH 40V 18A 8HSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 18A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고5,920
MOSFET (Metal Oxide)
40V
18A (Ta), 80A (Tc)
4.5V, 10V
2.5V @ 1mA
19.5nC @ 10V
1293pF @ 20V
±20V
-
3W (Ta), 30W (Tc)
7 mOhm @ 18A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
hot RRH090P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 9A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 650mW (Ta)
  • Rds On (Max) @ Id, Vgs: 15.4 mOhm @ 9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고17,688
MOSFET (Metal Oxide)
30V
9A (Ta)
4V, 10V
2.5V @ 1mA
30nC @ 5V
3000pF @ 10V
±20V
-
650mW (Ta)
15.4 mOhm @ 9A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RCD075N20TL
Rohm Semiconductor

MOSFET N-CH 200V 7.5A CPT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 850mW (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 325 mOhm @ 3.75A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,432
MOSFET (Metal Oxide)
200V
7.5A (Tc)
10V
5.25V @ 1mA
15nC @ 10V
755pF @ 25V
±30V
-
850mW (Ta), 20W (Tc)
325 mOhm @ 3.75A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot RCD060N25TL
Rohm Semiconductor

MOSFET N-CH 250V 6A CPT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 850mW (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 530 mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고30,000
MOSFET (Metal Oxide)
250V
6A (Tc)
10V
5V @ 1mA
15nC @ 10V
840pF @ 25V
±30V
-
850mW (Ta), 20W (Tc)
530 mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot RRH075P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 7.5A SOP8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 650mW (Ta)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고82,188
MOSFET (Metal Oxide)
30V
7.5A (Ta)
4V, 10V
2.5V @ 1mA
21nC @ 5V
1900pF @ 10V
±20V
-
650mW (Ta)
21 mOhm @ 7.5A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
hot RSY200N05TL
Rohm Semiconductor

MOSFET N-CH 45V 20A TCPT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Ta)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TCPT3
  • Package / Case: 3-SMD, Flat Leads
패키지: 3-SMD, Flat Leads
재고7,600
MOSFET (Metal Oxide)
45V
20A (Ta)
4.5V, 10V
-
-
-
±20V
-
20W (Ta)
-
150°C (TJ)
Surface Mount
TCPT3
3-SMD, Flat Leads
RDD020N50TL
Rohm Semiconductor

MOSFET N-CH 500V 2A CPT3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고4,016
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-