페이지 8 - Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
UT6MA3TCR	Rohm Semiconductor	20V NCH+PCH MIDDLE POWER MOSFET FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Rds On (Max) @ Id, Vgs: 59 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: HUML2020L8	패키지: 6-UDFN Exposed Pad	재고5,184	-	20V	5A, 5.5A	59 mOhm @ 5A, 4.5V	1.5V @ 1mA	6.5nC @ 4.5V	460pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	HUML2020L8
QH8KA4TCR	Rohm Semiconductor	30V NCH+NCH MIDDLE POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고7,888	-	30V	9A	17 mOhm @ 7A, 4.5V	1.5V @ 1mA	12nC @ 4.5V	1400pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
SP8K2TB	Rohm Semiconductor	MOSFET 2N-CH 30V 6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,159,248	Logic Level Gate	30V	6A	30 mOhm @ 6A, 10V	2.5V @ 1mA	10.1nC @ 5V	520pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
QH8MA4TCR	Rohm Semiconductor	MOSFET N/P-CH 30V TSMT8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고2,112	Standard	30V	9A, 8A	16 mOhm @ 9A, 10V	2.5V @ 1mA	15.5nC @ 10V	640pF @ 15V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
QS8J13TR	Rohm Semiconductor	MOSFET 2P-CH 12V 5.5A TSMT8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 22 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 6V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고6,416	Logic Level Gate	12V	5.5A	22 mOhm @ 5.5A, 4.5V	1V @ 1mA	60nC @ 4.5V	6300pF @ 6V	1.25W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
UT6JA2TCR	Rohm Semiconductor	-30V PCH+PCH MIDDLE POWER MOSFET FET Type: 2 P-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: HUML2020L8	패키지: 6-UDFN Exposed Pad	재고2,000	-	30V	4A	70 mOhm @ 4A, 10V	2.5V @ 1mA	6.7nC @ 10V	305pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	HUML2020L8
SH8M4TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 9A/7A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 7A Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고27,000	Logic Level Gate	30V	9A, 7A	18 mOhm @ 9A, 10V	2.5V @ 1mA	15nC @ 5V	1190pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
US6K2TR	Rohm Semiconductor	MOSFET 2N-CH 30V 1.4A TUMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	패키지: 6-SMD, Flat Leads	재고432,000	Logic Level Gate	30V	1.4A	240 mOhm @ 1.4A, 10V	2.5V @ 1mA	2nC @ 5V	70pF @ 10V	1W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	TUMT6
QH8MA3TCR	Rohm Semiconductor	MOSFET N/P-CH 30V TSMT8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고6,192	Standard	30V	7A, 5.5A	29 mOhm @ 7A, 10V	2.5V @ 1mA	7.2nC @ 10V	300pF @ 15V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
US6K4TR	Rohm Semiconductor	MOSFET 2N-CH 20V 1.5A TUMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	패키지: 6-SMD, Flat Leads	재고4,064	Logic Level Gate	20V	1.5A	180 mOhm @ 1.5A, 4.5V	1V @ 1mA	2.5nC @ 4.5V	110pF @ 10V	1W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	TUMT6
US6K1TR	Rohm Semiconductor	MOSFET 2N-CH 30V 1.5A TUMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	패키지: 6-SMD, Flat Leads	재고828,000	Logic Level Gate	30V	1.5A	240 mOhm @ 1.5A, 4.5V	1.5V @ 1mA	2.2nC @ 4.5V	80pF @ 10V	1W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	TUMT6
QH8KA2TCR	Rohm Semiconductor	30V NCH+NCH POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V Power - Max: 2.4W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고7,264	-	30V	4.5A	73 mOhm @ 4.5A, 10V	2.5V @ 1mA	3nC @ 10V	125pf @ 15V	2.4W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
US6M11TR	Rohm Semiconductor	MOSFET N/P-CH 20V/12V TUMT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V, 12V Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: 6-TSSOP, SC-88, SOT-363	재고5,200	Logic Level Gate	20V, 12V	1.5A, 1.3A	180 mOhm @ 1.5A, 4.5V	1V @ 1mA	1.8nC @ 4.5V	110pF @ 10V	1W	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
US6J11TR	Rohm Semiconductor	MOSFET 2P-CH 12V 1.3A TUMT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V Power - Max: 320mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: 6-TSSOP, SC-88, SOT-363	재고36,000	Logic Level Gate	12V	1.3A	260 mOhm @ 1.3A, 4.5V	1V @ 1mA	2.4nC @ 4.5V	290pF @ 6V	320mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
QS6M3TR	Rohm Semiconductor	MOSFET N/P-CH 30V/20V 1.5A TSMT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSMT6 (SC-95)	패키지: SOT-23-6 Thin, TSOT-23-6	재고541,212	Logic Level Gate	30V, 20V	1.5A	230 mOhm @ 1.5A, 4.5V	1.5V @ 1mA	1.6nC @ 4.5V	80pF @ 10V	1.25W	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSMT6 (SC-95)
QH8MA2TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 4.5A/3A TSMT8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고7,248	Logic Level Gate	30V	4.5A, 3A	35 mOhm @ 4.5A, 10V	2.5V @ 1mA	8.4nC @ 10V	365pF @ 10V	1.25W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
TT8K11TCR	Rohm Semiconductor	MOSFET 2N-CH 30V 3A TSST8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1A Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	패키지: 8-SMD, Flat Lead	재고5,616	Logic Level Gate, 4V Drive	30V	3A	71 mOhm @ 3A, 10V	2.5V @ 1A	2.5nC @ 5V	140pF @ 10V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
SM6K2T110	Rohm Semiconductor	MOSFET 2N-CH 60V 0.2A SOT-457 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	패키지: SC-74, SOT-457	재고331,920	Logic Level Gate	60V	200mA	2.4 Ohm @ 200mA, 10V	2.5V @ 1mA	4.4nC @ 10V	15pF @ 10V	300mW	150°C (TJ)	Surface Mount	SC-74, SOT-457	SMT6
EM6K31GT2R	Rohm Semiconductor	MOSFET 2N-CH 60V 0.25A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: SOT-563, SOT-666	재고22,560	Logic Level Gate, 2.5V Drive	60V	250mA	2.4 Ohm @ 250mA, 10V	2.3V @ 1mA	-	15pF @ 25V	120mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
EM6J1T2R	Rohm Semiconductor	MOSFET 2P-CH 20V 0.2A EMT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: SOT-563, SOT-666	재고517,212	Logic Level Gate	20V	200mA	1.2 Ohm @ 200mA, 4.5V	1V @ 100µA	1.4nC @ 4.5V	115pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
SP8K3TB	Rohm Semiconductor	MOSFET 2N-CH 30V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,031,220	Logic Level Gate	30V	7A	24 mOhm @ 7A, 10V	2.5V @ 1mA	11.8nC @ 5V	600pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
TT8J13TCR	Rohm Semiconductor	MOSFET 2P-CH 12V 2.5A TSST8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 6V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	패키지: 8-SMD, Flat Lead	재고4,672	Logic Level Gate, 1.5V Drive	12V	2.5A	62 mOhm @ 2.5A, 4.5V	1V @ 1mA	16nC @ 4.5V	2000pF @ 6V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
QH8KA1TCR	Rohm Semiconductor	30V NCH+NCH POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V Power - Max: 2.4W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고2,688	-	30V	4.5A	73 mOhm @ 4.5A, 10V	2.5V @ 1mA	3nC @ 10V	125pf @ 15V	2.4W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
EM6K7T2R	Rohm Semiconductor	MOSFET 2N-CH 20V 0.2A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: SOT-563, SOT-666	재고511,500	Logic Level Gate	20V	200mA	1.2 Ohm @ 200mA, 2.5V	1V @ 1mA	-	25pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
TT8M3TR	Rohm Semiconductor	MOSFET N/P-CH 20V 2.5A TSST8 FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	패키지: 8-SMD, Flat Lead	재고3,424	Logic Level Gate, 1.5V Drive	20V	2.5A, 2.4A	72 mOhm @ 2.5A, 4.5V	1V @ 1mA	3.6nC @ 4.5V	260pF @ 10V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
QS8J11TCR	Rohm Semiconductor	MOSFET 2P-CH 12V 3.5A TSMT8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V Power - Max: 550mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고3,776	Logic Level Gate, 1.5V Drive	12V	3.5A	43 mOhm @ 3.5A, 4.5V	1V @ 1mA	22nC @ 4.5V	2600pF @ 6V	550mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
VT6J1T2CR	Rohm Semiconductor	MOSFET 2P-CH 20V 0.1A VMT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: VMT6	패키지: 6-SMD, Flat Leads	재고2,944	Logic Level Gate, 1.2V Drive	20V	100mA	3.8 Ohm @ 100mA, 4.5V	1V @ 100µA	-	15pF @ 10V	120mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	VMT6
EM6K31T2R	Rohm Semiconductor	MOSFET 2N-CH 60V 0.25A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: SOT-563, SOT-666	재고60,000	Logic Level Gate	60V	250mA	2.4 Ohm @ 250mA, 10V	2.3V @ 1mA	-	15pF @ 25V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6

UT6MA3TCR

Rohm Semiconductor

20V NCH+PCH MIDDLE POWER MOSFET

FET Type: N and P-Channel
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Rds On (Max) @ Id, Vgs: 59 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: HUML2020L8

패키지: 6-UDFN Exposed Pad

재고5,184

-

20V

5A, 5.5A

59 mOhm @ 5A, 4.5V

1.5V @ 1mA

6.5nC @ 4.5V

460pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

HUML2020L8

QH8KA4TCR

Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고7,888

-

30V

9A

17 mOhm @ 7A, 4.5V

1.5V @ 1mA

12nC @ 4.5V

1400pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

SP8K2TB

Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,159,248

Logic Level Gate

30V

6A

30 mOhm @ 6A, 10V

2.5V @ 1mA

10.1nC @ 5V

520pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

QH8MA4TCR

Rohm Semiconductor

MOSFET N/P-CH 30V TSMT8

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고2,112

Standard

30V

9A, 8A

16 mOhm @ 9A, 10V

2.5V @ 1mA

15.5nC @ 10V

640pF @ 15V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

QS8J13TR

Rohm Semiconductor

MOSFET 2P-CH 12V 5.5A TSMT8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 6V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고6,416

Logic Level Gate

12V

5.5A

22 mOhm @ 5.5A, 4.5V

1V @ 1mA

60nC @ 4.5V

6300pF @ 6V

1.25W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

UT6JA2TCR

Rohm Semiconductor

-30V PCH+PCH MIDDLE POWER MOSFET

FET Type: 2 P-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: HUML2020L8

패키지: 6-UDFN Exposed Pad

재고2,000

-

30V

4A

70 mOhm @ 4A, 10V

2.5V @ 1mA

6.7nC @ 10V

305pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

HUML2020L8

SH8M4TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고27,000

Logic Level Gate

30V

9A, 7A

18 mOhm @ 9A, 10V

2.5V @ 1mA

15nC @ 5V

1190pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

US6K2TR

Rohm Semiconductor

MOSFET 2N-CH 30V 1.4A TUMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

패키지: 6-SMD, Flat Leads

재고432,000

Logic Level Gate

30V

1.4A

240 mOhm @ 1.4A, 10V

2.5V @ 1mA

2nC @ 5V

70pF @ 10V

1W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

TUMT6

QH8MA3TCR

Rohm Semiconductor

MOSFET N/P-CH 30V TSMT8

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고6,192

Standard

30V

7A, 5.5A

29 mOhm @ 7A, 10V

2.5V @ 1mA

7.2nC @ 10V

300pF @ 15V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

US6K4TR

Rohm Semiconductor

MOSFET 2N-CH 20V 1.5A TUMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

패키지: 6-SMD, Flat Leads

재고4,064

Logic Level Gate

20V

1.5A

180 mOhm @ 1.5A, 4.5V

1V @ 1mA

2.5nC @ 4.5V

110pF @ 10V

1W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

TUMT6

US6K1TR

Rohm Semiconductor

MOSFET 2N-CH 30V 1.5A TUMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

패키지: 6-SMD, Flat Leads

재고828,000

Logic Level Gate

30V

1.5A

240 mOhm @ 1.5A, 4.5V

1.5V @ 1mA

2.2nC @ 4.5V

80pF @ 10V

1W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

TUMT6

QH8KA2TCR

Rohm Semiconductor

30V NCH+NCH POWER MOSFET

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Power - Max: 2.4W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고7,264

-

30V

4.5A

73 mOhm @ 4.5A, 10V

2.5V @ 1mA

3nC @ 10V

125pf @ 15V

2.4W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

US6M11TR

Rohm Semiconductor

MOSFET N/P-CH 20V/12V TUMT6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: 6-TSSOP, SC-88, SOT-363

재고5,200

Logic Level Gate

20V, 12V

1.5A, 1.3A

180 mOhm @ 1.5A, 4.5V

1V @ 1mA

1.8nC @ 4.5V

110pF @ 10V

1W

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

US6J11TR

Rohm Semiconductor

MOSFET 2P-CH 12V 1.3A TUMT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Power - Max: 320mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: 6-TSSOP, SC-88, SOT-363

재고36,000

Logic Level Gate

12V

1.3A

260 mOhm @ 1.3A, 4.5V

1V @ 1mA

2.4nC @ 4.5V

290pF @ 6V

320mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

QS6M3TR

Rohm Semiconductor

MOSFET N/P-CH 30V/20V 1.5A TSMT6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSMT6 (SC-95)

패키지: SOT-23-6 Thin, TSOT-23-6

재고541,212

Logic Level Gate

30V, 20V

1.5A

230 mOhm @ 1.5A, 4.5V

1.5V @ 1mA

1.6nC @ 4.5V

80pF @ 10V

1.25W

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSMT6 (SC-95)

QH8MA2TCR

Rohm Semiconductor

MOSFET N/P-CH 30V 4.5A/3A TSMT8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고7,248

Logic Level Gate

30V

4.5A, 3A

35 mOhm @ 4.5A, 10V

2.5V @ 1mA

8.4nC @ 10V

365pF @ 10V

1.25W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

TT8K11TCR

Rohm Semiconductor

MOSFET 2N-CH 30V 3A TSST8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1A
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

패키지: 8-SMD, Flat Lead

재고5,616

Logic Level Gate, 4V Drive

30V

3A

71 mOhm @ 3A, 10V

2.5V @ 1A

2.5nC @ 5V

140pF @ 10V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

SM6K2T110

Rohm Semiconductor

MOSFET 2N-CH 60V 0.2A SOT-457

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SMT6

패키지: SC-74, SOT-457

재고331,920

Logic Level Gate

60V

200mA

2.4 Ohm @ 200mA, 10V

2.5V @ 1mA

4.4nC @ 10V

15pF @ 10V

300mW

150°C (TJ)

Surface Mount

SC-74, SOT-457

SMT6

EM6K31GT2R

Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A EMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Power - Max: 120mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: SOT-563, SOT-666

재고22,560

Logic Level Gate, 2.5V Drive

60V

250mA

2.4 Ohm @ 250mA, 10V

2.3V @ 1mA

-

15pF @ 25V

120mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

EM6J1T2R

Rohm Semiconductor

MOSFET 2P-CH 20V 0.2A EMT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: SOT-563, SOT-666

재고517,212

Logic Level Gate

20V

200mA

1.2 Ohm @ 200mA, 4.5V

1V @ 100µA

1.4nC @ 4.5V

115pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

SP8K3TB

Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,031,220

Logic Level Gate

30V

7A

24 mOhm @ 7A, 10V

2.5V @ 1mA

11.8nC @ 5V

600pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

TT8J13TCR

Rohm Semiconductor

MOSFET 2P-CH 12V 2.5A TSST8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 6V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

패키지: 8-SMD, Flat Lead

재고4,672

Logic Level Gate, 1.5V Drive

12V

2.5A

62 mOhm @ 2.5A, 4.5V

1V @ 1mA

16nC @ 4.5V

2000pF @ 6V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

QH8KA1TCR

Rohm Semiconductor

30V NCH+NCH POWER MOSFET

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Power - Max: 2.4W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고2,688

-

30V

4.5A

73 mOhm @ 4.5A, 10V

2.5V @ 1mA

3nC @ 10V

125pf @ 15V

2.4W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

EM6K7T2R

Rohm Semiconductor

MOSFET 2N-CH 20V 0.2A EMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: SOT-563, SOT-666

재고511,500

Logic Level Gate

20V

200mA

1.2 Ohm @ 200mA, 2.5V

1V @ 1mA

-

25pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

TT8M3TR

Rohm Semiconductor

MOSFET N/P-CH 20V 2.5A TSST8

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A
Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

패키지: 8-SMD, Flat Lead

재고3,424

Logic Level Gate, 1.5V Drive

20V

2.5A, 2.4A

72 mOhm @ 2.5A, 4.5V

1V @ 1mA

3.6nC @ 4.5V

260pF @ 10V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

QS8J11TCR

Rohm Semiconductor

MOSFET 2P-CH 12V 3.5A TSMT8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
Power - Max: 550mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고3,776

Logic Level Gate, 1.5V Drive

12V

3.5A

43 mOhm @ 3.5A, 4.5V

1V @ 1mA

22nC @ 4.5V

2600pF @ 6V

550mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

VT6J1T2CR

Rohm Semiconductor

MOSFET 2P-CH 20V 0.1A VMT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Power - Max: 120mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: VMT6

패키지: 6-SMD, Flat Leads

재고2,944

Logic Level Gate, 1.2V Drive

20V

100mA

3.8 Ohm @ 100mA, 4.5V

1V @ 100µA

-

15pF @ 10V

120mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

VMT6

EM6K31T2R

Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A EMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: SOT-563, SOT-666

재고60,000

Logic Level Gate

60V

250mA

2.4 Ohm @ 250mA, 10V

2.3V @ 1mA

-

15pF @ 25V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6