Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

EM6K7T2CR

Rohm Semiconductor

MOSFET 2N-CH 20V 0.2A EMT6

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
• Power - Max: 150mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: EMT6

패키지: -

SH8KC6TB1

Rohm Semiconductor

MOSFET 2N-CH 60V 6.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
• Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

HP8JE5TB1

Rohm Semiconductor

-100V 12.5A, DUAL PCH+PCH, HSOP8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc)
• Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V
• Power - Max: 3W (Ta), 21W (Tc)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-HSOP

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SH8M24GZETB

Rohm Semiconductor

MOSFET N/P-CH 45V 6A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

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SH8K26GZ0TB1

Rohm Semiconductor

MOSFET 2N-CH 40V 6A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

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QS8M51HZGTR

Rohm Semiconductor

100V NCH + PCH SMALL SIGNAL MOSF

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
• Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
• Power - Max: 1.1W (Ta)
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

패키지: -

SH8KC7TB1

Rohm Semiconductor

MOSFET 2N-CH 60V 10.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
• Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

QH8MC5TCR

Rohm Semiconductor

MOSFET N/P-CH 60V 3A/3.5A TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

패키지: -

QH8K26TR

Rohm Semiconductor

MOSFET 2N-CH 40V 7A TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

패키지: -

SP8K52FRATB

Rohm Semiconductor

MOSFET 2N-CH 100V 3A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

SP8M31HZGTB

Rohm Semiconductor

MOSFET N/P-CH 60V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 2500pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

UT6J3TCR1

Rohm Semiconductor

MOSFET 2P-CH 20V 3A 8DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerUDFN
• Supplier Device Package: DFN2020-8D

패키지: -

HP8MC5TB1

Rohm Semiconductor

60V 12A, DUAL NCH+PCH, HSOP8, PO

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
• Power - Max: 3W (Ta), 20W (Tc)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-HSOP

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SH8KA2TB1

Rohm Semiconductor

MOSFET 2N-CH 30V 8A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

QS8M31TR

Rohm Semiconductor

MOSFET N/P-CH 60V 3A/2A TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2A (Ta)
• Rds On (Max) @ Id, Vgs: 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA, 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, 7.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, 750pF @ 10V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

패키지: -

QH8K51TR

Rohm Semiconductor

MOSFET 2N-CH 100V 2A TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

패키지: -

QH8JC5TCR

Rohm Semiconductor

MOSFET 2P-CH 60V 3.5A TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

패키지: -

QS6K21FRATR

Rohm Semiconductor

MOSFET 2N-CH 45V 1A TSMT6

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Rds On (Max) @ Id, Vgs: 420mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
• Power - Max: 950mW (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSMT6 (SC-95)

패키지: -

EM6M2T2CR

Rohm Semiconductor

MOSFET N/P-CH 20V EMT6

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

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SH8KA4TB1

Rohm Semiconductor

MOSFET 2N-CH 30V 9A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
• Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

SH8K37GZETB

Rohm Semiconductor

MOSFET 2N-CH 60V 5.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
• Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

SH8K3TB1

Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

HP8MA2TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 18A/15A 8HSOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
• Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
• Power - Max: 3W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-HSOP

패키지: -

SP8K41HZGTB

Rohm Semiconductor

MOSFET 2N-CH 80V 3.4A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
• Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

SH8ME5TB1

Rohm Semiconductor

MOSFET 100V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V, 91mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, 52nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V, 2100pF @ 50V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

RZM001P02T2CL

Rohm Semiconductor

MOSFET 2P-CH 20V EMT6

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

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UT6MB5TCR

Rohm Semiconductor

MOSFET 40V 5A/3.5A HUML2020L8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc)
• Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-PowerUDFN
• Supplier Device Package: HUML2020L8

패키지: -

HS8MA2TCR1

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/7A 9DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
• Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerWDFN
• Supplier Device Package: DFN3333-9DC

패키지: -