페이지 6 - NXP 제품 - 트랜지스터 - FET, MOSFET - RF | Heisener Electronics
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NXP 제품 - 트랜지스터 - FET, MOSFET - RF

기록 1,171
페이지  6/42
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제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
hot MRFG35010ANT1
NXP

FET RF 15V 3.55GHZ PLD-1.5

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 9W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고11,544
3.55GHz
10dB
12V
-
-
130mA
9W
15V
PLD-1.5
PLD-1.5
MW6S010NR1
NXP

FET RF 68V 960MHZ TO270-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 125mA
  • Power - Output: 10W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
패키지: TO-270AA
재고15,276
960MHz
18dB
28V
-
-
125mA
10W
68V
TO-270AA
TO-270-2
MRF1518NT1
NXP

FET RF 40V 520MHZ PLD-1.5

  • Transistor Type: LDMOS
  • Frequency: 520MHz
  • Gain: 13dB
  • Voltage - Test: 12.5V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 40V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고13,452
520MHz
13dB
12.5V
4A
-
150mA
8W
40V
PLD-1.5
PLD-1.5
hot MW6S004NT1
NXP

FET RF 68V 1.96GHZ PLD-1.5

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 4W
  • Voltage - Rated: 68V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고146,532
1.96GHz
18dB
28V
-
-
50mA
4W
68V
PLD-1.5
PLD-1.5
MRF1513NT1
NXP

FET RF 40V 520MHZ PLD-1.5

  • Transistor Type: LDMOS
  • Frequency: 520MHz
  • Gain: 15dB
  • Voltage - Test: 12.5V
  • Current Rating: 2A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 3W
  • Voltage - Rated: 40V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고19,764
520MHz
15dB
12.5V
2A
-
50mA
3W
40V
PLD-1.5
PLD-1.5
AFT05MS004NT1
NXP

FET RF 30V 520MHZ PLD

  • Transistor Type: LDMOS
  • Frequency: 520MHz
  • Gain: 20.9dB
  • Voltage - Test: 7.5V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 4.9W
  • Voltage - Rated: 30V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
패키지: TO-243AA
재고18,918
520MHz
20.9dB
7.5V
-
-
100mA
4.9W
30V
TO-243AA
SOT-89-3
BF545C,215
NXP

JFET N-CH 30V 25MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고309,114
-
-
-
25mA
-
-
-
30V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BF862,235
NXP

JFET N-CH 20V 25MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고2,000
-
-
-
25mA
-
-
-
20V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
hot BF862,215
NXP

JFET N-CH 20V 25MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고13,188
-
-
-
25mA
-
-
-
20V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
MRF085HR3
NXP

RF MOSFET LDMOS 50V NI650

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 1.215GHz
  • Gain: 25.6dB
  • Voltage - Test: 50 V
  • Current Rating: 2µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 85W
  • Voltage - Rated: 133 V
  • Package / Case: NI-650H-4L
  • Supplier Device Package: NI-650H-4L
패키지: -
Request a Quote
1.8MHz ~ 1.215GHz
25.6dB
50 V
2µA
-
100 mA
85W
133 V
NI-650H-4L
NI-650H-4L
MRF085HR5
NXP

RF MOSFET LDMOS 50V NI650

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 1.215GHz
  • Gain: 25.6dB
  • Voltage - Test: 50 V
  • Current Rating: 7µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 85W
  • Voltage - Rated: 133 V
  • Package / Case: NI-650H-4L
  • Supplier Device Package: NI-650H-4L
패키지: -
Request a Quote
1.8MHz ~ 1.215GHz
25.6dB
50 V
7µA
-
100 mA
85W
133 V
NI-650H-4L
NI-650H-4L
MHT1005HSR3
NXP

RF MOSFET LDMOS NI780S

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
AFM912NT1
NXP

RF MOSFET LDMOS 16DFN

  • Transistor Type: LDMOS
  • Frequency: 136MHz ~ 941MHz
  • Gain: 13.3dB
  • Voltage - Test: -
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30 V
  • Package / Case: 16-VDFN Exposed Pad
  • Supplier Device Package: 16-DFN (4x6)
패키지: -
Request a Quote
136MHz ~ 941MHz
13.3dB
-
10µA
-
-
-
30 V
16-VDFN Exposed Pad
16-DFN (4x6)
A5G35H055NT4
NXP

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLM7G22S-60PBG-118
NXP

RF MOSFET LDMOS 16HSOP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
A3T23H300W23SR6
NXP

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
A5G35S004N-3400
NXP

RF MOSFET 48V 6DFN

  • Transistor Type: -
  • Frequency: 3.3GHz ~ 4.3GHz
  • Gain: 16.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 12 mA
  • Power - Output: 24.5dBm
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (4x4.5)
패키지: -
Request a Quote
3.3GHz ~ 4.3GHz
16.9dB
48 V
-
-
12 mA
24.5dBm
125 V
6-LDFN Exposed Pad
6-PDFN (4x4.5)
MRF300AN-27MHZ
NXP

RF MOSFET LDMOS 50V 3SIL

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 250MHz
  • Gain: 28.2dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 300W
  • Voltage - Rated: 133 V
  • Package / Case: 3-SIP
  • Supplier Device Package: 3-SIL
패키지: -
Request a Quote
1.8MHz ~ 250MHz
28.2dB
50 V
10µA
-
100 mA
300W
133 V
3-SIP
3-SIL
A3G18H500-04SR3
NXP

RF MOSFET LDMOS 48V NI780

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 15.4dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 107W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780S-4L
  • Supplier Device Package: NI-780S-4L
패키지: -
Request a Quote
1.805GHz ~ 1.88GHz
15.4dB
48 V
-
-
200 mA
107W
125 V
NI-780S-4L
NI-780S-4L
A3G26H350W17SR3
NXP

RF MOSFET GAN 48V NI780

  • Transistor Type: GaN
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 13.3dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250 mA
  • Power - Output: 59W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780S-4S2S
  • Supplier Device Package: NI-780S-4S2S
패키지: -
Request a Quote
2.496GHz ~ 2.69GHz
13.3dB
48 V
-
-
250 mA
59W
125 V
NI-780S-4S2S
NI-780S-4S2S
A3T21H455W23SR6
NXP

RF MOSFET LDMOS 30V ACP1230S-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 15dB
  • Voltage - Test: 30 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 87W
  • Voltage - Rated: 65 V
  • Package / Case: ACP-1230S-4L2S
  • Supplier Device Package: ACP-1230S-4L2S
패키지: -
Request a Quote
2.11GHz ~ 2.2GHz
15dB
30 V
10µA
-
400 mA
87W
65 V
ACP-1230S-4L2S
ACP-1230S-4L2S
A2T27S020NR1
NXP

RF MOSFET LDMOS 28V TO270-2

  • Transistor Type: LDMOS
  • Frequency: 400MHz ~ 2.7GHz
  • Gain: 21dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 185 mA
  • Power - Output: 20W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270-2
  • Supplier Device Package: TO-270-2
패키지: -
Request a Quote
400MHz ~ 2.7GHz
21dB
28 V
10µA
-
185 mA
20W
65 V
TO-270-2
TO-270-2
A3T21H450W23SR6
NXP

RF MOSFET LDMOS 30V ACP1230S-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 15.4dB
  • Voltage - Test: 30 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 87W
  • Voltage - Rated: 65 V
  • Package / Case: ACP-1230S-4L2S
  • Supplier Device Package: ACP-1230S-4L2S
패키지: -
Request a Quote
2.11GHz ~ 2.2GHz
15.4dB
30 V
10µA
-
600 mA
87W
65 V
ACP-1230S-4L2S
ACP-1230S-4L2S
A5G38H055NT4
NXP

RF MOSFET GAN 48V 6DFN

  • Transistor Type: GaN
  • Frequency: 3.7GHz ~ 3.98GHz
  • Gain: 15dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 45 mA
  • Power - Output: 7.6W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
패키지: -
Request a Quote
3.7GHz ~ 3.98GHz
15dB
48 V
-
-
45 mA
7.6W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)
MMRF5017HSR5
NXP

RF MOSFET HEMT 50V NI400

  • Transistor Type: HEMT
  • Frequency: 30MHz ~ 2.2GHz
  • Gain: 18.4dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 125W
  • Voltage - Rated: 150 V
  • Package / Case: NI-400S-2S
  • Supplier Device Package: NI-400S-2S
패키지: -
재고3
30MHz ~ 2.2GHz
18.4dB
50 V
-
-
200 mA
125W
150 V
NI-400S-2S
NI-400S-2S
A3G35H100-04SR3
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
A2V09H525-04NR6
NXP

RF MOSFET LDMOS 48V OM1230-4

  • Transistor Type: LDMOS
  • Frequency: 720MHz ~ 960MHz
  • Gain: 18.9dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 688 mA
  • Power - Output: 120W
  • Voltage - Rated: 105 V
  • Package / Case: OM-1230-4L
  • Supplier Device Package: OM-1230-4L
패키지: -
Request a Quote
720MHz ~ 960MHz
18.9dB
48 V
10µA
-
688 mA
120W
105 V
OM-1230-4L
OM-1230-4L
A2T18S260W12NR3
NXP

RF MOSFET LDMOS 28V OM880X-2L2L

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 18.7dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.5 A
  • Power - Output: 280W
  • Voltage - Rated: 65 V
  • Package / Case: OM-880X-2L2L
  • Supplier Device Package: OM-880X-2L2L
패키지: -
Request a Quote
1.805GHz ~ 1.88GHz
18.7dB
28 V
10µA
-
1.5 A
280W
65 V
OM-880X-2L2L
OM-880X-2L2L