페이지 2 - NXP 제품 - 트랜지스터 - 양극(BJT) - RF | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 813
Language Translation

* Please refer to the English Version as our Official Version.

NXP 제품 - 트랜지스터 - 양극(BJT) - RF

기록 169
페이지  2/7
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFU530VL
NXP

TRANS RF NPN 12V 40MA SOT-143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고6,512
12V
11GHz
1.1dB @ 1.8GHz
15.5dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFU530AVL
NXP

TRANS RF NPN 12V 40MA TO-236AB

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 12dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고3,168
12V
11GHz
1.1dB @ 1.8GHz
12dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFU520XVL
NXP

TRANS RF NPN 12V 30MA SOT-143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 18dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고3,456
12V
10.5GHz
1.1dB @ 1.8GHz
18dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFU520XRVL
NXP

TRANS RF NPN 12V 30MA SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 17.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
패키지: SOT-143R
재고3,008
12V
10.5GHz
1dB @ 1.8GHz
17.5dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
BFU520VL
NXP

TRANS RF NPN 12V 30MA SOT-143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 17.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고5,440
12V
10.5GHz
1.1dB @ 1.8GHz
17.5dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFU520AVL
NXP

TRANS RF NPN 12V 30MA SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 12.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고3,216
12V
10GHz
1dB @ 1.8GHz
12.5dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFU550AVL
NXP

TRANS RF NPN 12V 50MA TO-236AB

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
  • Gain: 12dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고2,128
12V
11GHz
1.4dB @ 1.8GHz
12dB
450mW
60 @ 15mA, 8V
50mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFU520WF
NXP

TRANS RF NPN 12V 30MA SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 13dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
패키지: SC-70, SOT-323
재고7,792
12V
10GHz
1dB @ 1.8GHz
13dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
BFT25,215
NXP

TRANS RF NPN 5V 2.3GHZ SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 2.3GHz
  • Noise Figure (dB Typ @ f): 5.5dB @ 500MHz
  • Gain: -
  • Power - Max: 30mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 1V
  • Current - Collector (Ic) (Max): 6.5mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고4,736
5V
2.3GHz
5.5dB @ 500MHz
-
30mW
20 @ 1mA, 1V
6.5mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFU630F,115
NXP

TRANSISTOR NPN SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 21GHz
  • Noise Figure (dB Typ @ f): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
  • Gain: 13dB ~ 22.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
패키지: SOT-343F
재고3,856
5.5V
21GHz
0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
13dB ~ 22.5dB
200mW
90 @ 5mA, 2V
30mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
BFU580GX
NXP

TRANS RF NPN 12V 60MA SOT223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
  • Gain: 10.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: TO-261-4, TO-261AA
재고5,088
12V
11GHz
1.4dB @ 1.8GHz
10.5dB
1W
60 @ 30mA, 8V
60mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BLT50,115
NXP

TRANS NPN 7.5V SOT223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 470MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: TO-261-4, TO-261AA
재고20,304
10V
470MHz
-
-
2W
25 @ 300mA, 5V
500mA
175°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BFQ18A,115
NXP

TRANS NPN 18V 150MA SOT89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
패키지: TO-243AA
재고14,028
18V
4GHz
-
-
1W
25 @ 100mA, 10V
150mA
175°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
BFU580QX
NXP

TRANS RF NPN 12V 60MA SOT89-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
  • Gain: 8.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
패키지: TO-243AA
재고20,412
12V
10.5GHz
1.3dB @ 1.8GHz
8.5dB
1W
60 @ 30mA, 8V
60mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
BFU520R
NXP

TRANS RF NPN 12V 30MA SOT-143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
  • Gain: 20dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고5,056
12V
10.5GHz
0.65dB @ 900MHz
20dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFU790F,115
NXP

TRANSISTOR NPN SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
  • Gain: -
  • Power - Max: 234mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 235 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
패키지: SOT-343F
재고5,184
2.8V
25GHz
0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
-
234mW
235 @ 10mA, 2V
100mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
BFU520XAR
NXP

TRANS RF NPN 12V 30MA SOT-143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
  • Gain: 20dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고6,480
12V
10.5GHz
0.7dB @ 900MHz
20dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFU760F,115
NXP

TRANS RF NPN 2.8V 70MA SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
  • Gain: -
  • Power - Max: 220mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
패키지: SOT-343F
재고4,080
2.8V
45GHz
0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
-
220mW
155 @ 10mA, 2V
70mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
BFU768F,115
NXP

TRANS RF NPN 2.8V 70MA DFP4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz
  • Gain: 13.1dB
  • Power - Max: 220mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
패키지: SOT-343F
재고6,672
2.8V
-
1.1dB @ 2.4GHz
13.1dB
220mW
155 @ 10mA, 2V
70mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
hot BFU730LXZ
NXP

TRANS RF NPN 3V 30MA XQFN3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3V
  • Frequency - Transition: 53GHz
  • Noise Figure (dB Typ @ f): 0.75dB @ 6GHz
  • Gain: 15.8dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: 3-DFN1006 (1.0x0.6)
패키지: 3-XFDFN
재고45,900
3V
53GHz
0.75dB @ 6GHz
15.8dB
160mW
205 @ 2mA, 3V
30mA
-
Surface Mount
3-XFDFN
3-DFN1006 (1.0x0.6)
BFU725F/N1,115
NXP

TRANSISTOR NPN 40MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 55GHz
  • Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
  • Gain: 10dB ~ 24dB
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343 Reverse Pinning
  • Supplier Device Package: 4-SO
패키지: SOT-343 Reverse Pinning
재고2,016
2.8V
55GHz
0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
10dB ~ 24dB
136mW
160 @ 10mA, 2V
40mA
150°C (TJ)
Surface Mount
SOT-343 Reverse Pinning
4-SO
PBR941,215
NXP

TRANSISTOR NPN UHF 50MA SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고3,520
10V
8GHz
1.4dB ~ 2dB @ 1GHz ~ 2GHz
-
360mW
50 @ 5mA, 6V
50mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFU530WX
NXP

TRANS RF NPN 12V 40MA SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
패키지: SC-70, SOT-323
재고6,496
12V
11GHz
0.6dB @ 900MHz
18.5dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
BFU530R
NXP

TRANS RF NPN 12V 40MA SOT-143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 21.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고7,376
12V
11GHz
0.6dB @ 900MHz
21.5dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFU530XRR
NXP

TRANS RF NPN 12V 40MA SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
  • Gain: 21dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
패키지: SOT-143R
재고2,752
12V
11GHz
0.65dB @ 900MHz
21dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
BFU530XAR
NXP

TRANS RF NPN 12V 40MA SOT-143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
  • Gain: 22dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고6,192
12V
11GHz
0.7dB @ 900MHz
22dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFU910FX
NXP

TRANS NPN WIDEBAND DFP4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
패키지: SOT-343F
재고3,344
9.5V
-
-
13.5dB
300mW
-
15mA
-40°C ~ 150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
BFU668F,115
NXP

TRANSISTOR NPN SOT343F

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
패키지: SOT-343F
재고4,304
-
-
-
-
-
-
-
-
Surface Mount
SOT-343F
SOT-343F