Microsemi Corporation 제품

APTGT750U60D4G

Microsemi Corporation

IGBT 600V 1000A 2300W D4

• IGBT Type: Trench Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 1000A
• Power - Max: 2300W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 800A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 49nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: D4
• Supplier Device Package: D4

패키지: D4

APTM50AM19STG

Microsemi Corporation

MOSFET 2N-CH 500V 170A SP4

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 170A
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 85A, 10V
• Vgs(th) (Max) @ Id: 5V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
• Power - Max: 1250W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Supplier Device Package: SP4

패키지: SP4

JAN2N5416

Microsemi Corporation

TRANS PNP 300V 1A TO5

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
• Current - Collector Cutoff (Max): 1mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
• Power - Max: 750mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5

패키지: TO-205AA, TO-5-3 Metal Can

1N5358/TR8

Microsemi Corporation

DIODE ZENER 22V 5W T18

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±20%
• Power - Max: 5W
• Impedance (Max) (Zzt): 3.5 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 15.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

패키지: T-18, Axial

SMBG5919C/TR13

Microsemi Corporation

DIODE ZENER 5.6V 2W SMBG

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±2%
• Power - Max: 2W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

패키지: DO-215AA, SMB Gull Wing

CDLL5945D

Microsemi Corporation

DIODE ZENER 68V 1.25W DO213AB

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±1%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 120 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 51.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

패키지: DO-213AB, MELF

CDLL3829

Microsemi Corporation

DIODE ZENER

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

SMBJ5944A/TR13

Microsemi Corporation

DIODE ZENER 62V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 47.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

패키지: DO-214AA, SMB

1PMT5950AE3/TR7

Microsemi Corporation

DIODE ZENER 110V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 110V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 83.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

패키지: DO-216AA

SMAJ5942AE3/TR13

Microsemi Corporation

DIODE ZENER 51V 3W DO214AC

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 38.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMAJ)

패키지: DO-214AC, SMA

JAN1N3768

Microsemi Corporation

DIODE GEN PURP 1KV 35A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-203AB, DO-5, Stud

JANTXV1N5623

Microsemi Corporation

DIODE GEN PURP 1KV 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 500nA @ 1000V
• Capacitance @ Vr, F: 15pF @ 12V, 1MHz
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: A, Axial

M2S090-1FG484I

Microsemi Corporation

IC FPGA SOC 90K LUTS 484FBGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 90K Logic Modules
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

패키지: 484-BGA

A54SX32A-FG144

Microsemi Corporation

IC FPGA 111 I/O 144FBGA

• Number of LABs/CLBs: 2880
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 111
• Number of Gates: 48000
• Voltage - Supply: 2.25 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 144-LBGA
• Supplier Device Package: 144-FPBGA (13x13)

패키지: 144-LBGA

A40MX02-1PLG68I

Microsemi Corporation

IC FPGA 57 I/O 68PLCC

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 57
• Number of Gates: 3000
• Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 68-LCC (J-Lead)
• Supplier Device Package: 68-PLCC (24.23x24.23)

패키지: 68-LCC (J-Lead)

M2GL005S-TQG144I

Microsemi Corporation

IC FPGA 84 I/O 144TQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 6060
• Total RAM Bits: 719872
• Number of I/O: 84
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 144-LQFP
• Supplier Device Package: 144-TQFP (20x20)

패키지: 144-LQFP

JANTXV1N6172AUS

Microsemi Corporation

TVS DIODE 136.8VWM 245.7VC CPKG

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 136.8V
• Voltage - Breakdown (Min): 171V
• Voltage - Clamping (Max) @ Ipp: 245.7V
• Current - Peak Pulse (10/1000µs): 6.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, C
• Supplier Device Package: C, SQ-MELF

패키지: SQ-MELF, C

JAN1N6072A

Microsemi Corporation

TVS DIODE 185VWM 328VC DO13

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 185V
• Voltage - Breakdown (Min): 209V
• Voltage - Clamping (Max) @ Ipp: 328V
• Current - Peak Pulse (10/1000µs): 4.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13 (DO-202AA)

패키지: DO-13

MAP4KE220CAE3

Microsemi Corporation

TVS DIODE 185VWM 328VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 185V
• Voltage - Breakdown (Min): 209V
• Voltage - Clamping (Max) @ Ipp: 328V
• Current - Peak Pulse (10/1000µs): 1A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

MA15KP200AE3

Microsemi Corporation

TVS DIODE 200VWM 322VC DO204AR

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 200V
• Voltage - Breakdown (Min): 222V
• Voltage - Clamping (Max) @ Ipp: 322V
• Current - Peak Pulse (10/1000µs): 47A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

패키지: DO-204AR, Axial

MXLPLAD36KP100CA

Microsemi Corporation

TVS DIODE 162VC 223A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 100V
• Voltage - Breakdown (Min): 111V
• Voltage - Clamping (Max) @ Ipp: 162V
• Current - Peak Pulse (10/1000µs): 223A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

패키지: Nonstandard SMD

MX1.5KE22CA

Microsemi Corporation

TVS DIODE 18.8VWM 30.6VC CASE1

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 18.8V
• Voltage - Breakdown (Min): 20.9V
• Voltage - Clamping (Max) @ Ipp: 30.6V
• Current - Peak Pulse (10/1000µs): 49A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

패키지: DO-201AA, DO-27, Axial

MXSMBJ43CA

Microsemi Corporation

TVS DIODE 43VWM 69.4VC DO214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 43V
• Voltage - Breakdown (Min): 47.8V
• Voltage - Clamping (Max) @ Ipp: 69.4V
• Current - Peak Pulse (10/1000µs): 8.6A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

패키지: DO-214AA, SMB

MXLLCE16A

Microsemi Corporation

TVS DIODE 16VWM 26VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 16V
• Voltage - Breakdown (Min): 17.8V
• Voltage - Clamping (Max) @ Ipp: 26V
• Current - Peak Pulse (10/1000µs): 57A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

패키지: DO-201AA, DO-27, Axial

MSMCG8.5AE3

Microsemi Corporation

TVS DIODE 8.5VWM 14.4VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8.5V
• Voltage - Breakdown (Min): 9.44V
• Voltage - Clamping (Max) @ Ipp: 14.4V
• Current - Peak Pulse (10/1000µs): 104.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

패키지: DO-215AB, SMC Gull Wing

MSMBJ28A

Microsemi Corporation

TVS DIODE 28VWM 45.4VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 28V
• Voltage - Breakdown (Min): 31.1V
• Voltage - Clamping (Max) @ Ipp: 45.4V
• Current - Peak Pulse (10/1000µs): 13.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

패키지: DO-214AA, SMB

MMA023AA

Microsemi Corporation

MMIC AMPLIFIER - DC-30GHZ

• Frequency: 0Hz ~ 30GHz
• P1dB: 21.5dBm
• Gain: 17.5dB
• Noise Figure: 5.5dB
• RF Type: -
• Voltage - Supply: 8V
• Current - Supply: -
• Test Frequency: 30GHz
• Package / Case: -
• Supplier Device Package: -

패키지: -

1N5914BG

Microsemi Corporation

DIODE ZENER 3.6V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 3.6 V
• Tolerance: ±5%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 75 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: -

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