Microsemi Corporation 제품 - 트랜지스터 - 양극(BJT) - 어레이

JAN2N6988

Microsemi Corporation

TRANS 4PNP 60V 0.6A

• Transistor Type: 4 PNP (Quad)
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 400mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-Flatpack
• Supplier Device Package: 14-Flatpack

패키지: 14-Flatpack

2N6988

Microsemi Corporation

TRANS 4PNP 60V 0.6A 14FLATPACK

• Transistor Type: 4 PNP (Quad)
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 400mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-Flatpack
• Supplier Device Package: 14-Flatpack

패키지: 14-Flatpack

JANTXV2N2920

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO-78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

2N3838

Microsemi Corporation

TRANS NPN/PNP 40V 0.6A 6 PFLTPK

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-FlatPack
• Supplier Device Package: 6-Flatpack

패키지: 6-FlatPack

JANTXV2N3810L

Microsemi Corporation

TRANS 2PNP 60V 0.05A

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

JAN2N3810U

Microsemi Corporation

TRANS 2PNP 60V 0.05A

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

2N5795

Microsemi Corporation

TRANS 2PNP 60V 0.6A TO-78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
• Power - Max: 600mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

JAN2N2920L

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

JAN2N2919L

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

2N2920L

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

2N2919L

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

2N2060L

Microsemi Corporation

TRANS 2NPN 60V 0.5A TO78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Power - Max: 2.12W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

2N2919

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

2N3810U

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO-78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

JANTX2N3810L

Microsemi Corporation

TRANS 2PNP 60V 0.05A

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

JANTX2N3810

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

JAN2N3810L

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

2N3810L

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO-78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

JANTXV2N5794

Microsemi Corporation

TRANS 2NPN 40V 0.6A TO-78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 600mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

SG2013J-883B

Microsemi Corporation

TRANS 7NPN DARL 50V 0.6A 16JDIP

• Transistor Type: 7 NPN Darlington
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 900 @ 500mA, 2V
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: -
• Supplier Device Package: 16-CDIP

패키지: -

2N6990

Microsemi Corporation

TRANS 4NPN 50V 0.8A

• Transistor Type: 4 NPN (Quad)
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 400mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-Flatpack
• Supplier Device Package: 14-Flatpack

패키지: 14-Flatpack

2N6987

Microsemi Corporation

TRANS 4PNP 60V 0.6A TO116

• Transistor Type: 4 PNP (Quad)
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Supplier Device Package: TO-116

패키지: 14-DIP (0.300", 7.62mm)

JANTX2N4854

Microsemi Corporation

TRANS NPN/PNP 40V 0.6A TO78

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 600mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

JANS2N2920

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO-18

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-18

패키지: TO-206AA, TO-18-3 Metal Can

2N2920

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO-78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

2N3810

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO-78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

JANTXV2N3810

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

JANS2N3810L-TR

Microsemi Corporation

BJTS

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

패키지: -

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