페이지 12 - Fairchild/ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FDS6986AS_SN00192	Fairchild/ON Semiconductor	MOSFET 2N-CH 8SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,672	-	-	-	-	-	-	-	-	-	-	-	-
FDS6982AS_G	Fairchild/ON Semiconductor	MOSFET 2N-CH 8SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,280	-	-	-	-	-	-	-	-	-	-	-	-
FDMC8298	Fairchild/ON Semiconductor	MOSFET 2N-CH 8MLP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고90,852	-	-	-	-	-	-	-	-	-	-	-	-
FDD8424H_F085A	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 9A/6.5A DPAK FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-5	패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD	재고3,440	Logic Level Gate	40V	9A, 6.5A	24 mOhm @ 9A, 10V	3V @ 250µA	20nC @ 10V	1000pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-5
FDQ7238AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 14A/11A 14SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A, 11A Rds On (Max) @ Id, Vgs: 13.2 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Power - Max: 1.3W, 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SO	패키지: 14-SOIC (0.154", 3.90mm Width)	재고72,000	Logic Level Gate	30V	14A, 11A	13.2 mOhm @ 11A, 10V	3V @ 250µA	24nC @ 10V	920pF @ 15V	1.3W, 1.1W	-55°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SO
FDQ7236AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 14A/11A 14-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A, 11A Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Power - Max: 1.3W, 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SO	패키지: 14-SOIC (0.154", 3.90mm Width)	재고96,912	Logic Level Gate	30V	14A, 11A	8.7 mOhm @ 14A, 10V	3V @ 250µA	24nC @ 15V	920pF @ 15V	1.3W, 1.1W	-55°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SO
FDD8426H	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 12A/10A DPAK FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A, 10A Rds On (Max) @ Id, Vgs: 12 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD	재고120,012	Logic Level Gate	40V	12A, 10A	12 mOhm @ 12A, 10V	3V @ 250µA	53nC @ 10V	2735pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
SI9936DY	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고449,484	Standard	30V	5A	50 mOhm @ 5A, 10V	1V @ 250µA	35nC @ 10V	525pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDC6036P_F077	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 5A 6SSOT FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP Supplier Device Package: SuperSOT?-6	패키지: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	재고6,288	Logic Level Gate	20V	5A	44 mOhm @ 5A, 4.5V	1.5V @ 250µA	14nC @ 4.5V	992pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT Flat-lead, SuperSOT?-6 FLMP	SuperSOT?-6
FDS8962C	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 7A/5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고341,676	Logic Level Gate	30V	7A, 5A	30 mOhm @ 7A, 10V	3V @ 250µA	26nC @ 10V	575pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDD8424H_F085	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 9A/6.5A DPAK FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD	재고7,888	Logic Level Gate	40V	9A, 6.5A	24 mOhm @ 9A, 10V	3V @ 250µA	20nC @ 10V	1000pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
NDC7002N_SB9G007	Fairchild/ON Semiconductor	MOSFET 2N-CH 50V 0.51A 6-SSOT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 510mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고6,160	Logic Level Gate	50V	510mA	2 Ohm @ 510mA, 10V	2.5V @ 250µA	1nC @ 10V	20pF @ 25V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
FDY3001NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 0.2A SOT-563F FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고3,200	Logic Level Gate	20V	200mA	5 Ohm @ 200mA, 4.5V	1.5V @ 250µA	1.1nC @ 4.5V	60pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
FDY2001PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 0.15A SOT-563F FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 150mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고3,104	Logic Level Gate	20V	150mA	8 Ohm @ 150mA, 4.5V	1.5V @ 250µA	1.4nC @ 4.5V	100pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
FDS6982S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,039,716	Logic Level Gate	30V	6.3A, 8.6A	28 mOhm @ 6.3A, 10V	3V @ 250µA	12nC @ 5V	2040pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS6898A_NF40	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 9.4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,648	Logic Level Gate	20V	9.4A	14 mOhm @ 9.4A, 4.5V	1.5V @ 250µA	23nC @ 4.5V	1821pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS4895C	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.4A Rds On (Max) @ Id, Vgs: 39 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 20V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,496	Standard	40V	5.5A, 4.4A	39 mOhm @ 5.5A, 10V	5V @ 250µA	10nC @ 10V	410pF @ 20V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMC3300NZA	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 8A POWER33 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 26 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 10V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-Power33 (3x3)	패키지: 8-PowerVDFN	재고274,740	Logic Level Gate	20V	8A	26 mOhm @ 8A, 4.5V	1.5V @ 250µA	12nC @ 4.5V	815pF @ 10V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-Power33 (3x3)
FDC6020C_F077	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V 6-SSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.9A, 4.2A Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP Supplier Device Package: SuperSOT?-6 FLMP	패키지: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	재고6,960	Logic Level Gate	20V	5.9A, 4.2A	27 mOhm @ 5.9A, 4.5V	1.5V @ 250µA	8nC @ 4.5V	677pF @ 10V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT Flat-lead, SuperSOT?-6 FLMP	SuperSOT?-6 FLMP
FDC6000NZ_F077	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.3A 6-SSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.3A Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP Supplier Device Package: SuperSOT?-6 FLMP	패키지: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	재고5,648	Logic Level Gate	20V	7.3A	20 mOhm @ 6.5A, 4.5V	1.5V @ 250µA	11nC @ 4.5V	840pF @ 10V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT Flat-lead, SuperSOT?-6 FLMP	SuperSOT?-6 FLMP
FDMA1027PT	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3A MICROFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: MicroFET 2x2 Thin	패키지: 6-UFDFN Exposed Pad	재고5,552	Logic Level Gate	20V	3A	120 mOhm @ 3A, 4.5V	1.3V @ 250µA	6nC @ 4.5V	435pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	MicroFET 2x2 Thin
FD6M016N03	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 80A EPM15 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: EPM15 Supplier Device Package: EPM15	패키지: EPM15	재고7,680	Standard	30V	80A	1.6 mOhm @ 40A, 10V	3V @ 250µA	295nC @ 10V	11535pF @ 15V	-	-40°C ~ 150°C (TJ)	Through Hole	EPM15	EPM15
FDS9933BZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 4.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고29,580	Logic Level Gate	20V	4.9A	46 mOhm @ 4.9A, 4.5V	1.5V @ 250µA	15nC @ 4.5V	985pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FD6M045N06	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 60A EPM15 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 25V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: EPM15 Supplier Device Package: EPM15	패키지: EPM15	재고3,920	Standard	60V	60A	4.5 mOhm @ 40A, 10V	4V @ 250µA	87nC @ 10V	3890pF @ 25V	-	-40°C ~ 150°C (TJ)	Through Hole	EPM15	EPM15
FD6M043N08	Fairchild/ON Semiconductor	MOSFET 2N-CH 75V 65A EPM15 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: EPM15 Supplier Device Package: EPM15	패키지: EPM15	재고7,824	Standard	75V	65A	4.3 mOhm @ 40A, 10V	4V @ 250µA	148nC @ 10V	6180pF @ 25V	-	-40°C ~ 150°C (TJ)	Through Hole	EPM15	EPM15
FD6M033N06	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 73A EPM15 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 73A Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6010pF @ 25V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: EPM15 Supplier Device Package: EPM15	패키지: EPM15	재고5,440	Standard	60V	73A	3.3 mOhm @ 40A, 10V	4V @ 250µA	129nC @ 10V	6010pF @ 25V	-	-40°C ~ 150°C (TJ)	Through Hole	EPM15	EPM15
FDS6984S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 8.5A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고406,992	Logic Level Gate	30V	5.5A, 8.5A	19 mOhm @ 8.5A, 10V	3V @ 250µA	12nC @ 5V	1233pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS4953	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 55 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고158,856	Logic Level Gate	30V	5A	55 mOhm @ 5A, 10V	3V @ 250µA	9nC @ 5V	528pF @ 15V	900mW	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO

FDS6986AS_SN00192

Fairchild/ON Semiconductor

MOSFET 2N-CH 8SOIC

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,672

-

FDS6982AS_G

Fairchild/ON Semiconductor

MOSFET 2N-CH 8SOIC

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,280

-

FDMC8298

Fairchild/ON Semiconductor

MOSFET 2N-CH 8MLP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고90,852

-

FDD8424H_F085A

Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 9A/6.5A DPAK

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-5

패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD

재고3,440

Logic Level Gate

40V

9A, 6.5A

24 mOhm @ 9A, 10V

3V @ 250µA

20nC @ 10V

1000pF @ 20V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-5

FDQ7238AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 14A/11A 14SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A, 11A
Rds On (Max) @ Id, Vgs: 13.2 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Power - Max: 1.3W, 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SO

패키지: 14-SOIC (0.154", 3.90mm Width)

재고72,000

Logic Level Gate

30V

14A, 11A

13.2 mOhm @ 11A, 10V

3V @ 250µA

24nC @ 10V

920pF @ 15V

1.3W, 1.1W

-55°C ~ 150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SO

FDQ7236AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 14A/11A 14-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A, 11A
Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Power - Max: 1.3W, 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SO

패키지: 14-SOIC (0.154", 3.90mm Width)

재고96,912

Logic Level Gate

30V

14A, 11A

8.7 mOhm @ 14A, 10V

3V @ 250µA

24nC @ 15V

920pF @ 15V

1.3W, 1.1W

-55°C ~ 150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SO

FDD8426H

Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 12A/10A DPAK

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A, 10A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD

재고120,012

Logic Level Gate

40V

12A, 10A

12 mOhm @ 12A, 10V

3V @ 250µA

53nC @ 10V

2735pF @ 20V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-4L

SI9936DY

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고449,484

Standard

30V

5A

50 mOhm @ 5A, 10V

1V @ 250µA

35nC @ 10V

525pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDC6036P_F077

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 5A 6SSOT

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
Supplier Device Package: SuperSOT?-6

패키지: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

재고6,288

Logic Level Gate

20V

5A

44 mOhm @ 5A, 4.5V

1.5V @ 250µA

14nC @ 4.5V

992pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SSOT Flat-lead, SuperSOT?-6 FLMP

SuperSOT?-6

FDS8962C

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 7A/5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고341,676

Logic Level Gate

30V

7A, 5A

30 mOhm @ 7A, 10V

3V @ 250µA

26nC @ 10V

575pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDD8424H_F085

Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 9A/6.5A DPAK

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD

재고7,888

Logic Level Gate

40V

9A, 6.5A

24 mOhm @ 9A, 10V

3V @ 250µA

20nC @ 10V

1000pF @ 20V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-4L

NDC7002N_SB9G007

Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 0.51A 6-SSOT

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 510mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고6,160

Logic Level Gate

50V

510mA

2 Ohm @ 510mA, 10V

2.5V @ 250µA

1nC @ 10V

20pF @ 25V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

FDY3001NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 0.2A SOT-563F

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Power - Max: 446mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고3,200

Logic Level Gate

20V

200mA

5 Ohm @ 200mA, 4.5V

1.5V @ 250µA

1.1nC @ 4.5V

60pF @ 10V

446mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

FDY2001PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.15A SOT-563F

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 150mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Power - Max: 446mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고3,104

Logic Level Gate

20V

150mA

8 Ohm @ 150mA, 4.5V

1.5V @ 250µA

1.4nC @ 4.5V

100pF @ 10V

446mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

FDS6982S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,039,716

Logic Level Gate

30V

6.3A, 8.6A

28 mOhm @ 6.3A, 10V

3V @ 250µA

12nC @ 5V

2040pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS6898A_NF40

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 9.4A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,648

Logic Level Gate

20V

9.4A

14 mOhm @ 9.4A, 4.5V

1.5V @ 250µA

23nC @ 4.5V

1821pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS4895C

Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.4A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 20V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,496

Standard

40V

5.5A, 4.4A

39 mOhm @ 5.5A, 10V

5V @ 250µA

10nC @ 10V

410pF @ 20V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMC3300NZA

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 8A POWER33

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 26 mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 10V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: 8-PowerVDFN

재고274,740

Logic Level Gate

20V

8A

26 mOhm @ 8A, 4.5V

1.5V @ 250µA

12nC @ 4.5V

815pF @ 10V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-Power33 (3x3)

FDC6020C_F077

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 6-SSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A, 4.2A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
Supplier Device Package: SuperSOT?-6 FLMP

패키지: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

재고6,960

Logic Level Gate

20V

5.9A, 4.2A

27 mOhm @ 5.9A, 4.5V

1.5V @ 250µA

8nC @ 4.5V

677pF @ 10V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

6-SSOT Flat-lead, SuperSOT?-6 FLMP

SuperSOT?-6 FLMP

FDC6000NZ_F077

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.3A 6-SSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
Supplier Device Package: SuperSOT?-6 FLMP

패키지: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

재고5,648

Logic Level Gate

20V

7.3A

20 mOhm @ 6.5A, 4.5V

1.5V @ 250µA

11nC @ 4.5V

840pF @ 10V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

6-SSOT Flat-lead, SuperSOT?-6 FLMP

SuperSOT?-6 FLMP

FDMA1027PT

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3A MICROFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: MicroFET 2x2 Thin

패키지: 6-UFDFN Exposed Pad

재고5,552

Logic Level Gate

20V

3A

120 mOhm @ 3A, 4.5V

1.3V @ 250µA

6nC @ 4.5V

435pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

MicroFET 2x2 Thin

FD6M016N03

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 80A EPM15

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: EPM15
Supplier Device Package: EPM15

패키지: EPM15

재고7,680

Standard

30V

80A

1.6 mOhm @ 40A, 10V

3V @ 250µA

295nC @ 10V

11535pF @ 15V

-

-40°C ~ 150°C (TJ)

Through Hole

EPM15

FDS9933BZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 4.9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고29,580

Logic Level Gate

20V

4.9A

46 mOhm @ 4.9A, 4.5V

1.5V @ 250µA

15nC @ 4.5V

985pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FD6M045N06

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 60A EPM15

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 25V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: EPM15
Supplier Device Package: EPM15

패키지: EPM15

재고3,920

Standard

60V

60A

4.5 mOhm @ 40A, 10V

4V @ 250µA

87nC @ 10V

3890pF @ 25V

-

-40°C ~ 150°C (TJ)

Through Hole

EPM15

FD6M043N08

Fairchild/ON Semiconductor

MOSFET 2N-CH 75V 65A EPM15

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 65A
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: EPM15
Supplier Device Package: EPM15

패키지: EPM15

재고7,824

Standard

75V

65A

4.3 mOhm @ 40A, 10V

4V @ 250µA

148nC @ 10V

6180pF @ 25V

-

-40°C ~ 150°C (TJ)

Through Hole

EPM15

FD6M033N06

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 73A EPM15

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 73A
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6010pF @ 25V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: EPM15
Supplier Device Package: EPM15

패키지: EPM15

재고5,440

Standard

60V

73A

3.3 mOhm @ 40A, 10V

4V @ 250µA

129nC @ 10V

6010pF @ 25V

-

-40°C ~ 150°C (TJ)

Through Hole

EPM15

FDS6984S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 8.5A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고406,992

Logic Level Gate

30V

5.5A, 8.5A

19 mOhm @ 8.5A, 10V

3V @ 250µA

12nC @ 5V

1233pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS4953

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고158,856

Logic Level Gate

30V

5A

55 mOhm @ 5A, 10V

3V @ 250µA

9nC @ 5V

528pF @ 15V

900mW

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO