페이지 6 - ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이 | Heisener Electronics
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ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

기록 325
페이지  6/11
이미지
부품 번호
제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot MMDF2P02HDR2
ON Semiconductor

MOSFET 2P-CH 20V 3.3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 16V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고17,700
Logic Level Gate
20V
3.3A
160 mOhm @ 2A, 10V
2V @ 250µA
20nC @ 10V
588pF @ 16V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MMDF2C03HDR2
ON Semiconductor

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,800
Logic Level Gate
30V
4.1A, 3A
70 mOhm @ 3A, 10V
3V @ 250µA
16nC @ 10V
630pF @ 24V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
NTMFD4C86NT3G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6)
패키지: 8-PowerTDFN
재고4,992
Standard
30V
11.3A, 18.1A
5.4 mOhm @ 30A, 10V
2.2V @ 250µA
22.2nC @ 10V
1153pF @ 15V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6)
NTMFD4C87NT1G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6)
패키지: 8-PowerTDFN
재고5,072
Standard
30V
11.7A, 14.9A
5.4 mOhm @ 30A, 10V
2.2V @ 250µA
22.2nC @ 10V
1252pF @ 15V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6)
NTMFD4C85NT3G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
  • Power - Max: 1.13W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6)
패키지: 8-PowerTDFN
재고6,528
Standard
30V
15.4A, 29.7A
3 mOhm @ 20A, 10V
2.1V @ 250µA
32nC @ 10V
1960pF @ 15V
1.13W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6)
NTMFD4C87NT3G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6)
패키지: 8-PowerTDFN
재고2,768
Standard
30V
11.7A, 14.9A
5.4 mOhm @ 30A, 10V
2.2V @ 250µA
22.2nC @ 10V
1252pF @ 15V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6)
hot NTMFD4C88NT1G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6)
패키지: 8-PowerTDFN
재고16,452
Standard
30V
11.7A, 14.2A
5.4 mOhm @ 10A, 10V
2.2V @ 250µA
22.2nC @ 10V
1252pF @ 15V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6)
NTMFD4C88NT3G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6)
패키지: 8-PowerTDFN
재고3,712
Standard
30V
11.7A, 14.2A
5.4 mOhm @ 10A, 10V
2.2V @ 250µA
22.2nC @ 10V
1252pF @ 15V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6)
NTLLD4951NFTWG
ON Semiconductor

MOSFET 2N-CH 30V 5.5A/6.3A WDFN8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
  • Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
  • Power - Max: 800mW, 810mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-WDFN (3x3)
패키지: 8-PowerWDFN
재고2,848
Standard
30V
5.5A, 6.3A
17.4 mOhm @ 9A, 10V
2.2V @ 250µA
12nC @ 10V
605pF @ 15V
800mW, 810mW
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-WDFN (3x3)
NVMFD5483NLWFT1G
ON Semiconductor

MOSFET 2N-CH 60V 6.4A 8DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고3,520
Logic Level Gate
60V
6.4A
36 mOhm @ 15A, 10V
2.5V @ 250µA
23.4nC @ 10V
668pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5483NLT1G
ON Semiconductor

MOSFET 2N-CH 60V 6.4A 8DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고3,296
Logic Level Gate
60V
6.4A
36 mOhm @ 15A, 10V
2.5V @ 250µA
23.4nC @ 10V
668pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5483NLWFT3G
ON Semiconductor

MOSFET 2N-CH 60V 6.4A 8DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고3,488
Logic Level Gate
60V
6.4A
36 mOhm @ 15A, 10V
2.5V @ 250µA
23.4nC @ 10V
668pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5873NLWFT1G
ON Semiconductor

MOSFET 2N-CH 60V 10A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고3,376
Logic Level Gate
60V
10A
13 mOhm @ 15A, 10V
2.5V @ 250µA
30.5nC @ 10V
1560pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5483NLT3G
ON Semiconductor

MOSFET 2N-CH 60V 6.4A 8DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고4,544
Logic Level Gate
60V
6.4A
36 mOhm @ 15A, 10V
2.5V @ 250µA
23.4nC @ 10V
668pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5873NLT1G
ON Semiconductor

MOSFET 2N-CH 60V 10A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고7,776
Logic Level Gate
60V
10A
13 mOhm @ 15A, 10V
2.5V @ 250µA
30.5nC @ 10V
1560pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NTMFD4901NFT3G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual), Schottky
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A, 17.9A
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
  • Power - Max: 1.1W, 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고6,112
Logic Level Gate
30V
10.3A, 17.9A
6.5 mOhm @ 10A, 10V
2.2V @ 250µA
9.7nC @ 4.5V
1150pF @ 15V
1.1W, 1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5852NLWFT1G
ON Semiconductor

MOSFET 2N-CH 40V 15A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고3,360
Logic Level Gate
40V
15A
6.9 mOhm @ 20A, 10V
2.4V @ 250µA
36nC @ 10V
1800pF @ 25V
3.2W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5852NLT1G
ON Semiconductor

MOSFET 2N-CH 40V 15A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고4,688
Logic Level Gate
40V
15A
6.9 mOhm @ 20A, 10V
2.4V @ 250µA
36nC @ 10V
1800pF @ 25V
3.2W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5485NLWFT1G
ON Semiconductor

MOSFET 2N-CH 60V 5.3A DFN8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
  • Power - Max: 2.9W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고2,864
Logic Level Gate
60V
5.3A
44 mOhm @ 15A, 10V
2.5V @ 250µA
20nC @ 10V
560pF @ 25V
2.9W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5485NLT1G
ON Semiconductor

MOSFET 2N-CH 60V 5.3A DFN8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
  • Power - Max: 2.9W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고7,712
Logic Level Gate
60V
5.3A
44 mOhm @ 15A, 10V
2.5V @ 250µA
20nC @ 10V
560pF @ 25V
2.9W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
EFC4C002NLTDG
ON Semiconductor

MOSFET 2N-CH 8WLCSP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
  • Power - Max: 2.6W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XFBGA, WLCSP
  • Supplier Device Package: 8-WLCSP (6x2.5)
패키지: 8-XFBGA, WLCSP
재고3,712
Logic Level Gate
-
-
-
2.2V @ 1mA
45nC @ 4.5V
6200pF @ 15V
2.6W
150°C (TJ)
Surface Mount
8-XFBGA, WLCSP
8-WLCSP (6x2.5)
NVMFD5489NLWFT1G
ON Semiconductor

MOSFET 2N-CH 60V 4.5A DFN8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고7,776
Logic Level Gate
60V
4.5A
65 mOhm @ 15A, 10V
2.5V @ 250µA
12.4nC @ 10V
330pF @ 25V
3W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVDD5894NLT4G
ON Semiconductor

MOSFET 2N-CH 40V 14A DPAK

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2103pF @ 25V
  • Power - Max: 3.8W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: D-Pak 5-Lead
패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD
재고3,168
Standard
40V
14A
10 mOhm @ 50A, 10V
2.5V @ 250µA
41nC @ 10V
2103pF @ 25V
3.8W
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-5, DPak (4 Leads + Tab), TO-252AD
D-Pak 5-Lead
NVMFD5853NWFT1G
ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고6,608
Logic Level Gate
40V
12A
10 mOhm @ 15A, 10V
4V @ 250µA
24nC @ 10V
1225pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5853NLWFT1G
ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고2,112
Logic Level Gate
40V
12A
10 mOhm @ 15A, 10V
2.4V @ 250µA
23nC @ 10V
1100pF @ 25V
3W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5485NLWFT3G
ON Semiconductor

MOSFET 2N-CH 60V 5.3A DFN8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
  • Power - Max: 2.9W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고6,288
Logic Level Gate
60V
5.3A
44 mOhm @ 15A, 10V
2.5V @ 250µA
20nC @ 10V
560pF @ 25V
2.9W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5489NLT1G
ON Semiconductor

MOSFET 2N-CH 60V 4.5A DFN8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고2,688
Logic Level Gate
60V
4.5A
65 mOhm @ 15A, 10V
2.5V @ 250µA
12.4nC @ 10V
330pF @ 25V
3W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5853NT1G
ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고2,048
Logic Level Gate
40V
12A
10 mOhm @ 15A, 10V
4V @ 250µA
24nC @ 10V
1225pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5485NLT3G
ON Semiconductor

MOSFET 2N-CH 60V 5.3A DFN8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
  • Power - Max: 2.9W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고5,568
Logic Level Gate
60V
5.3A
44 mOhm @ 15A, 10V
2.5V @ 250µA
20nC @ 10V
560pF @ 25V
2.9W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMD3P03R2G
ON Semiconductor

MOSFET 2P-CH 30V 2.34A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.34A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 24V
  • Power - Max: 730mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,192
Logic Level Gate
30V
2.34A
85 mOhm @ 3.05A, 10V
2.5V @ 250µA
25nC @ 10V
750pF @ 24V
730mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC