페이지 9 - Microsemi Corporation 제품 - 트랜지스터 - 양극(BJT) - RF

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2N4957	Microsemi Corporation	TRANS PNP 30V 30MA TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	패키지: TO-72-3 Metal Can	재고11,436	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
JANTX2N2857UB	Microsemi Corporation	TRANS NPN 15V 0.04A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: 3-SMD, No Lead	재고6,368	15V	-	4.5dB @ 450MHz	21dB	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2N2857UB	Microsemi Corporation	TRANS NPN 15V 0.04A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: 3-SMD, No Lead	재고3,936	15V	-	4.5dB @ 450MHz	21dB	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
JANTXV2N2857	Microsemi Corporation	TRANS NPN 15V 0.04A TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	패키지: TO-72-3 Metal Can	재고3,856	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
JAN2N2857	Microsemi Corporation	TRANS NPN 15V 0.04A TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	패키지: TO-72-3 Metal Can	재고5,568	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
MS2203	Microsemi Corporation	TRANS RF BIPO 5W 300MA M220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10.8dB ~ 12.3dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	패키지: M220	재고6,336	20V	1.09GHz	-	10.8dB ~ 12.3dB	5W	120 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	M220	M220
MS2204	Microsemi Corporation	TRANS RF BIPO 600MW 300MA M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10.8dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	패키지: M115	재고2,432	20V	1.09GHz	-	10.8dB	600mW	15 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	M115	M115
MS2206	Microsemi Corporation	TRANS RF BIPO 7.5W 1A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 7.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	패키지: M115	재고4,496	20V	1.025GHz ~ 1.15GHz	-	10dB	7.5W	20 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	M115	M115
MRF517	Microsemi Corporation	TRANS RF BIPO 2.5W 150MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 10dB Power - Max: 2.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 60mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고7,680	20V	4GHz	-	9dB ~ 10dB	2.5W	50 @ 60mA, 10V	150mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
BFY90	Microsemi Corporation	TRANS RF NPN 200MW 50MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 2.5dB ~ 5dB @ 500MHz Gain: 20dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: TO-206AF, TO-72-4 Metal Can	재고2,912	15V	1.3GHz	2.5dB ~ 5dB @ 500MHz	20dB	200mW	20 @ 25mA, 1V	50mA	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
MS1202	Microsemi Corporation	TRANS RF BIPO 15W 1A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 118MHz ~ 136MHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 15W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M135 Supplier Device Package: M135	패키지: M135	재고3,120	35V	118MHz ~ 136MHz	-	8.4dB	15W	5 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	M135	M135
MS2228	Microsemi Corporation	TRANS RF BIPO 175W 5.4A M214 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 5.4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	패키지: M214	재고5,888	65V	1.03GHz ~ 1.09GHz	-	9dB	175W	10 @ 1A, 5V	5.4A	200°C (TJ)	Chassis Mount	M214	M214
MS1007	Microsemi Corporation	TRANS RF BIPO 233W 10A M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 233W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	패키지: M174	재고5,328	55V	30MHz	-	14dB	233W	18 @ 1.4A, 6V	10A	200°C (TJ)	Chassis Mount	M174	M174
MS2393	Microsemi Corporation	TRANS RF BIPO 87.5W 11A M138 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 583W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V Current - Collector (Ic) (Max): 11A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M138 Supplier Device Package: M138	패키지: M138	재고3,104	65V	1.025GHz ~ 1.15GHz	-	8.2dB	583W	5 @ 300mA, 5V	11A	200°C (TJ)	Chassis Mount	M138	M138
MS2361	Microsemi Corporation	TRANS RF BIPO 87.5W 2.6A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 2.6A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	패키지: M115	재고6,368	65V	1.025GHz ~ 1.15GHz	-	9dB	87.5W	-	2.6A	200°C (TJ)	Chassis Mount	M115	M115
MS2341	Microsemi Corporation	TRANS RF BIPO 87.5W 2.6A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 2.6A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	패키지: M115	재고4,272	65V	1.025GHz ~ 1.15GHz	-	9dB	87.5W	-	2.6A	200°C (TJ)	Chassis Mount	M115	M115
0105-50	Microsemi Corporation	TRANS RF BIPO 140W 500MHZ 55JT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 100MHz ~ 500MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 10dB Power - Max: 140W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JT Supplier Device Package: 55JT	패키지: 55JT	재고6,528	65V	100MHz ~ 500MHz	-	8.5dB ~ 10dB	140W	10 @ 1A, 5V	7A	200°C (TJ)	Chassis Mount	55JT	55JT
2307	Microsemi Corporation	TRANS BIPO 20V 7W 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 42V Frequency - Transition: 2.3GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 20.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	패키지: 55BT	재고360,000	42V	2.3GHz	-	8dB	20.5W	10 @ 500mA, 5V	1A	200°C (TJ)	Chassis Mount	55BT	55BT
2003	Microsemi Corporation	TRANS HBT RF BIPOLAR 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 12W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT-1 Supplier Device Package: 55BT-1	패키지: 55BT-1	재고3,024	50V	2GHz	-	8.5dB	12W	10 @ 100mA, 5V	500mA	200°C (TJ)	Chassis Mount	55BT-1	55BT-1
MS2322	Microsemi Corporation	TRANS RF BIPO 87.5W 1.5A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 1.5A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	패키지: M115	재고2,016	65V	1.025GHz ~ 1.15GHz	-	10dB	87.5W	10 @ 100mA, 5V	1.5A	-	Chassis Mount	M115	M115
MS2321	Microsemi Corporation	TRANS RF BIPO 87.5W 1.5A M104 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M105 Supplier Device Package: M105	패키지: M105	재고2,768	65V	1.025GHz ~ 1.15GHz	-	10dB	87.5W	-	1.5A	200°C (TJ)	Chassis Mount	M105	M105
MS2272	Microsemi Corporation	TRANS RF BIPO 940W 24A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.6dB Power - Max: 940W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	패키지: M216	재고3,920	65V	960MHz ~ 1.215GHz	-	7.6dB	940W	10 @ 5A, 5V	24A	200°C (TJ)	Chassis Mount	M216	M216
MS2215	Microsemi Corporation	TRANS RF BIPO 300W 16.5A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 300W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 16.5A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	패키지: M216	재고3,728	55V	960MHz ~ 1.215GHz	-	7.5dB	300W	20 @ 5A, 5V	16.5A	250°C (TJ)	Chassis Mount	M216	M216
MS2214	Microsemi Corporation	TRANS BIPO NPN 300W 8A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 300W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	패키지: M218	재고5,360	55V	960MHz ~ 1.215GHz	-	7.5dB	300W	20 @ 2A, 5V	8A	250°C (TJ)	Chassis Mount	M218	M218
MS2213	Microsemi Corporation	TRANS RF BIPO 75W 3.5A M214 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.8dB Power - Max: 75W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 3.5A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	패키지: M214	재고4,544	55V	960MHz ~ 1.215GHz	-	7.8dB	75W	15 @ 1A, 5V	3.5A	250°C (TJ)	Chassis Mount	M214	M214
MS2212	Microsemi Corporation	TRANS RF BIPO 50W 1.8A M222 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8.1dB ~ 8.9dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V Current - Collector (Ic) (Max): 1.8A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M222 Supplier Device Package: M222	패키지: M222	재고4,640	55V	960MHz ~ 1.215GHz	-	8.1dB ~ 8.9dB	50W	15 @ 500mA, 5V	1.8A	250°C (TJ)	Chassis Mount	M222	M222
MS2211	Microsemi Corporation	TRANS RF BIPO 25W 900MA M222 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 48V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 9.3dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 900mA Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M222 Supplier Device Package: M222	패키지: M222	재고14,544	48V	960MHz ~ 1.215GHz	-	9.3dB	25W	30 @ 250mA, 5V	900mA	250°C (TJ)	Chassis Mount	M222	M222
MS2205	Microsemi Corporation	TRANS RF BIPO 21.9W 1A M220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 21.9W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M105 Supplier Device Package: M105	패키지: M105	재고5,584	45V	1.025GHz ~ 1.15GHz	-	9.5dB	21.9W	10 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	M105	M105
MS2202	Microsemi Corporation	TRANS BIPO NPN M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	패키지: M115	재고7,248	3.5V	1.025GHz ~ 1.15GHz	-	9dB	10W	30 @ 100mA, 5V	250mA	200°C (TJ)	Chassis Mount	M115	M115
2N5109	Microsemi Corporation	TRANS RF NPN 2.5W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 2.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고19,092	20V	1.2GHz	-	12dB	2.5W	40 @ 50mA, 15V	400mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39

2N4957

Microsemi Corporation

TRANS PNP 30V 30MA TO72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

패키지: TO-72-3 Metal Can

재고11,436

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

JANTX2N2857UB

Microsemi Corporation

TRANS NPN 15V 0.04A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 21dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: 3-SMD, No Lead

재고6,368

15V

-

4.5dB @ 450MHz

21dB

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2N2857UB

Microsemi Corporation

TRANS NPN 15V 0.04A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 21dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: 3-SMD, No Lead

재고3,936

15V

-

4.5dB @ 450MHz

21dB

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

JANTXV2N2857

Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 12.5dB ~ 21dB @ 450MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

패키지: TO-72-3 Metal Can

재고3,856

15V

500MHz

4.5dB @ 450MHz

12.5dB ~ 21dB @ 450MHz

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

JAN2N2857

Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 12.5dB ~ 21dB @ 450MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

패키지: TO-72-3 Metal Can

재고5,568

15V

500MHz

4.5dB @ 450MHz

12.5dB ~ 21dB @ 450MHz

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

MS2203

Microsemi Corporation

TRANS RF BIPO 5W 300MA M220

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10.8dB ~ 12.3dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M220
Supplier Device Package: M220

패키지: M220

재고6,336

20V

1.09GHz

-

10.8dB ~ 12.3dB

5W

120 @ 100mA, 5V

300mA

200°C (TJ)

Chassis Mount

M220

MS2204

Microsemi Corporation

TRANS RF BIPO 600MW 300MA M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10.8dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

패키지: M115

재고2,432

20V

1.09GHz

-

10.8dB

600mW

15 @ 100mA, 5V

300mA

200°C (TJ)

Chassis Mount

M115

MS2206

Microsemi Corporation

TRANS RF BIPO 7.5W 1A M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 7.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

패키지: M115

재고4,496

20V

1.025GHz ~ 1.15GHz

-

10dB

7.5W

20 @ 100mA, 5V

1A

200°C (TJ)

Chassis Mount

M115

MRF517

Microsemi Corporation

TRANS RF BIPO 2.5W 150MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 10dB
Power - Max: 2.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 60mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고7,680

20V

4GHz

-

9dB ~ 10dB

2.5W

50 @ 60mA, 10V

150mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

BFY90

Microsemi Corporation

TRANS RF NPN 200MW 50MA TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 2.5dB ~ 5dB @ 500MHz
Gain: 20dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: TO-206AF, TO-72-4 Metal Can

재고2,912

15V

1.3GHz

2.5dB ~ 5dB @ 500MHz

20dB

200mW

20 @ 25mA, 1V

50mA

-

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

MS1202

Microsemi Corporation

TRANS RF BIPO 15W 1A M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 118MHz ~ 136MHz
Noise Figure (dB Typ @ f): -
Gain: 8.4dB
Power - Max: 15W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M135
Supplier Device Package: M135

패키지: M135

재고3,120

35V

118MHz ~ 136MHz

-

8.4dB

15W

5 @ 100mA, 5V

1A

200°C (TJ)

Chassis Mount

M135

MS2228

Microsemi Corporation

TRANS RF BIPO 175W 5.4A M214

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 5.4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M214
Supplier Device Package: M214

패키지: M214

재고5,888

65V

1.03GHz ~ 1.09GHz

-

9dB

175W

10 @ 1A, 5V

5.4A

200°C (TJ)

Chassis Mount

M214

MS1007

Microsemi Corporation

TRANS RF BIPO 233W 10A M174

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 233W
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V
Current - Collector (Ic) (Max): 10A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M174
Supplier Device Package: M174

패키지: M174

재고5,328

55V

30MHz

-

14dB

233W

18 @ 1.4A, 6V

10A

200°C (TJ)

Chassis Mount

M174

MS2393

Microsemi Corporation

TRANS RF BIPO 87.5W 11A M138

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB
Power - Max: 583W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V
Current - Collector (Ic) (Max): 11A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M138
Supplier Device Package: M138

패키지: M138

재고3,104

65V

1.025GHz ~ 1.15GHz

-

8.2dB

583W

5 @ 300mA, 5V

11A

200°C (TJ)

Chassis Mount

M138

MS2361

Microsemi Corporation

TRANS RF BIPO 87.5W 2.6A M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 2.6A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

패키지: M115

재고6,368

65V

1.025GHz ~ 1.15GHz

-

9dB

87.5W

-

2.6A

200°C (TJ)

Chassis Mount

M115

MS2341

Microsemi Corporation

TRANS RF BIPO 87.5W 2.6A M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 2.6A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

패키지: M115

재고4,272

65V

1.025GHz ~ 1.15GHz

-

9dB

87.5W

-

2.6A

200°C (TJ)

Chassis Mount

M115

0105-50

Microsemi Corporation

TRANS RF BIPO 140W 500MHZ 55JT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 100MHz ~ 500MHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 10dB
Power - Max: 140W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 7A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55JT
Supplier Device Package: 55JT

패키지: 55JT

재고6,528

65V

100MHz ~ 500MHz

-

8.5dB ~ 10dB

140W

10 @ 1A, 5V

7A

200°C (TJ)

Chassis Mount

55JT

2307

Microsemi Corporation

TRANS BIPO 20V 7W 55BT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 42V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 20.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

패키지: 55BT

재고360,000

42V

2.3GHz

-

8dB

20.5W

10 @ 500mA, 5V

1A

200°C (TJ)

Chassis Mount

55BT

2003

Microsemi Corporation

TRANS HBT RF BIPOLAR 55BT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 12W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT-1
Supplier Device Package: 55BT-1

패키지: 55BT-1

재고3,024

50V

2GHz

-

8.5dB

12W

10 @ 100mA, 5V

500mA

200°C (TJ)

Chassis Mount

55BT-1

MS2322

Microsemi Corporation

TRANS RF BIPO 87.5W 1.5A M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

패키지: M115

재고2,016

65V

1.025GHz ~ 1.15GHz

-

10dB

87.5W

10 @ 100mA, 5V

1.5A

-

Chassis Mount

M115

MS2321

Microsemi Corporation

TRANS RF BIPO 87.5W 1.5A M104

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M105
Supplier Device Package: M105

패키지: M105

재고2,768

65V

1.025GHz ~ 1.15GHz

-

10dB

87.5W

-

1.5A

200°C (TJ)

Chassis Mount

M105

MS2272

Microsemi Corporation

TRANS RF BIPO 940W 24A M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.6dB
Power - Max: 940W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

패키지: M216

재고3,920

65V

960MHz ~ 1.215GHz

-

7.6dB

940W

10 @ 5A, 5V

24A

200°C (TJ)

Chassis Mount

M216

MS2215

Microsemi Corporation

TRANS RF BIPO 300W 16.5A M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.5dB
Power - Max: 300W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 16.5A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

패키지: M216

재고3,728

55V

960MHz ~ 1.215GHz

-

7.5dB

300W

20 @ 5A, 5V

16.5A

250°C (TJ)

Chassis Mount

M216

MS2214

Microsemi Corporation

TRANS BIPO NPN 300W 8A M218

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.5dB
Power - Max: 300W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

패키지: M218

재고5,360

55V

960MHz ~ 1.215GHz

-

7.5dB

300W

20 @ 2A, 5V

8A

250°C (TJ)

Chassis Mount

M218

MS2213

Microsemi Corporation

TRANS RF BIPO 75W 3.5A M214

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.8dB
Power - Max: 75W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 3.5A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M214
Supplier Device Package: M214

패키지: M214

재고4,544

55V

960MHz ~ 1.215GHz

-

7.8dB

75W

15 @ 1A, 5V

3.5A

250°C (TJ)

Chassis Mount

M214

MS2212

Microsemi Corporation

TRANS RF BIPO 50W 1.8A M222

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8.1dB ~ 8.9dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
Current - Collector (Ic) (Max): 1.8A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M222
Supplier Device Package: M222

패키지: M222

재고4,640

55V

960MHz ~ 1.215GHz

-

8.1dB ~ 8.9dB

50W

15 @ 500mA, 5V

1.8A

250°C (TJ)

Chassis Mount

M222

MS2211

Microsemi Corporation

TRANS RF BIPO 25W 900MA M222

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 48V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 9.3dB
Power - Max: 25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Current - Collector (Ic) (Max): 900mA
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M222
Supplier Device Package: M222

패키지: M222

재고14,544

48V

960MHz ~ 1.215GHz

-

9.3dB

25W

30 @ 250mA, 5V

900mA

250°C (TJ)

Chassis Mount

M222

MS2205

Microsemi Corporation

TRANS RF BIPO 21.9W 1A M220

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 21.9W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M105
Supplier Device Package: M105

패키지: M105

재고5,584

45V

1.025GHz ~ 1.15GHz

-

9.5dB

21.9W

10 @ 100mA, 5V

1A

200°C (TJ)

Chassis Mount

M105

MS2202

Microsemi Corporation

TRANS BIPO NPN M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

패키지: M115

재고7,248

3.5V

1.025GHz ~ 1.15GHz

-

9dB

10W

30 @ 100mA, 5V

250mA

200°C (TJ)

Chassis Mount

M115

2N5109

Microsemi Corporation

TRANS RF NPN 2.5W 400MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 2.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고19,092

20V

1.2GHz

-

12dB

2.5W

40 @ 50mA, 15V

400mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39