페이지 3 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IDT71V3558S166PFI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고5,040	SRAM	SRAM - Synchronous ZBT	4.5Mb (256K x 18)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
CY7C1512AV18-250BZXI	Cypress Semiconductor Corp	IC SRAM 72MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	패키지: 165-LBGA	재고5,200	SRAM	SRAM - Synchronous, QDR II	72Mb (4M x 18)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
CY7C1414AV18-200BZXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 200MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	패키지: 165-LBGA	재고5,664	SRAM	SRAM - Synchronous, QDR II	36Mb (1M x 36)	Parallel	200MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
CY7C1371D-100AXCT	Cypress Semiconductor Corp	IC SRAM 18MBIT 100MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고2,352	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	100MHz	-	8.5ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
AT28C64E-20JI	Microchip Technology	IC EEPROM 64KBIT 200NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 200µs Access Time: 200ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고3,184	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	200µs	200ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT28C256E-15FM/883	Microchip Technology	IC EEPROM 256KBIT 150NS 28FLATPK Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 28-CFlatPack Supplier Device Package: 28-Flatpack, Ceramic Bottom-Brazed	패키지: 28-CFlatPack	재고5,168	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	150ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TC)	Surface Mount	28-CFlatPack	28-Flatpack, Ceramic Bottom-Brazed
70V3389S6BC	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 6NS 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (64K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고4,560	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (64K x 18)	Parallel	-	-	6ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
MT44K16M36RB-093E IT:B TR	Micron Technology Inc.	IC RLDRAM 576MBIT 1.067GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (16M x 36) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 168-TBGA Supplier Device Package: 168-BGA	패키지: 168-TBGA	재고5,312	DRAM	DRAM	576Mb (16M x 36)	Parallel	1067MHz	-	8ns	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
7028L20PFI8	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 20NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고3,056	SRAM	SRAM - Dual Port, Asynchronous	1Mb (64K x 16)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT53B384M64D4EZ-062 WT:B TR	Micron Technology Inc.	IC SDRAM 24GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,040	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
CY14V104LA-BA45XIT	Cypress Semiconductor Corp	IC NVSRAM 4MBIT 45NS 48FBGA Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-FBGA (6x10)	패키지: 48-TFBGA	재고2,624	NVSRAM	NVSRAM (Non-Volatile SRAM)	4Mb (512K x 8)	Parallel	-	45ns	45ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-FBGA (6x10)
S26KS512SDPBHA023	Cypress Semiconductor Corp	FLASH MEMORY NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 96ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,128	FLASH	FLASH - NOR	512Mb (64M x 8)	Parallel	166MHz	-	96ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	-
MT47H64M8SH-25E IT:H	Micron Technology Inc.	IC SDRAM 512MBIT 400MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고3,904	DRAM	SDRAM - DDR2	512Mb (64M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
MT48LC4M16A2B4-6A IT:J	Micron Technology Inc.	IC SDRAM 64MBIT 167MHZ 54VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (8x8)	패키지: 54-VFBGA	재고6,288	DRAM	SDRAM	64Mb (4M x 16)	Parallel	167MHz	12ns	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-VFBGA	54-VFBGA (8x8)
MT28EW512ABA1HPC-0SIT	Micron Technology Inc.	IC FLASH SER NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8, 32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 95ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	패키지: 64-LBGA	재고2,208	FLASH	FLASH - NOR	512Mb (64M x 8, 32M x 16)	Parallel	-	60ns	95ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-LBGA (11x13)
24LC04B-I/MC	Microchip Technology	IC EEPROM 4KBIT 400KHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN (2x3)	패키지: 8-VFDFN Exposed Pad	재고6,752	EEPROM	EEPROM	4Kb (256 x 8 x 2)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-VFDFN Exposed Pad	8-DFN (2x3)
71256SA15YGI8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 15NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	패키지: 28-BSOJ (0.300", 7.62mm Width)	재고12,636	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
47C16-I/W16K	Microchip Technology	IC EERAM 16K I2C 1MHZ WAFER Memory Type: Non-Volatile Memory Format: EERAM Technology: EEPROM, SRAM Memory Size: 16Kb (2K x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 1ms Access Time: 400ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고5,168	EERAM	EEPROM, SRAM	16Kb (2K x 8)	I²C	1MHz	1ms	400ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
S29PL127J60TDI130H	Cypress Semiconductor Corp	IC FLASH MEM NOR 56TSOPI Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128M (8M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 60ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고6,800	FLASH	FLASH - NOR	128M (8M x 16)	Parallel	-	60ns	60ns	2.7 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
W632GG8NB15I-TR	Winbond Electronics	IC DRAM 2GBIT SSTL 15 78VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gbit Memory Interface: SSTL_15 Clock Frequency: 667 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-VFBGA (8x10.5)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3	2Gbit	SSTL_15	667 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-VFBGA (8x10.5)
MX25U6472FZBI02	Macronix	MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 40µs, 3ms Access Time: 6 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-USON (4x3)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	64Mbit	SPI - Quad I/O, QPI	133 MHz	40µs, 3ms	6 ns	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN Exposed Pad	8-USON (4x3)
MX30LF4G28AD-XKI	Macronix	IC FLASH 4GBIT PARALLEL 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: -	재고4,536	FLASH	FLASH - NAND (SLC)	4Gbit	Parallel	-	20ns	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
SM662GAA-BDST	Silicon Motion, Inc.	IC FLASH 128GBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 128Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	패키지: -	Request a Quote	FLASH	FLASH - NAND (TLC)	128Gbit	eMMC	-	-	-	-	-40°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
SST39LF020-55-4C-WHE-T	Microchip Technology	IC FLSH 2MBIT PARALLEL 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20µs Access Time: 55 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-TSOP	패키지: -	Request a Quote	FLASH	FLASH - NOR	2Mbit	Parallel	-	20µs	55 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-TSOP
MB85RS256TYPNF-G-BCE1	Fujitsu Semiconductor Memory Solution	256KBIT FRAM WITH SPI, 1.8~3.6V, Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 256Kbit Memory Interface: SPI Clock Frequency: 33 MHz Write Cycle Time - Word, Page: - Access Time: 13 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	256Kbit	SPI	33 MHz	-	13 ns	1.8V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MT62F1G64D8CH-031-WT-B-TR	Micron Technology Inc.	IC DRAM 64GBIT 3.2GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: - Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	64Gbit	-	3.2 GHz	-	-	1.05V	-25°C ~ 85°C (TC)	-	-	-
CY7C194-20VC	Cypress Semiconductor Corp	IC SRAM 256KBIT PARALLEL 24SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 24-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 24-SOJ	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	256Kbit	Parallel	-	20ns	20 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	24-BSOJ (0.300", 7.62mm Width)	24-SOJ
W25Q80DVWA	Winbond Electronics	IC FLASH 8MBIT SPI/QUAD 104MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 30µs, 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	FLASH	FLASH - NOR	8Mbit	SPI - Quad I/O	104 MHz	30µs, 3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	-	-	-

IDT71V3558S166PFI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고5,040

SRAM

SRAM - Synchronous ZBT

4.5Mb (256K x 18)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

CY7C1512AV18-250BZXI

Cypress Semiconductor Corp

IC SRAM 72MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

패키지: 165-LBGA

재고5,200

SRAM

SRAM - Synchronous, QDR II

72Mb (4M x 18)

Parallel

250MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

CY7C1414AV18-200BZXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 200MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

패키지: 165-LBGA

재고5,664

SRAM

SRAM - Synchronous, QDR II

36Mb (1M x 36)

Parallel

200MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

CY7C1371D-100AXCT

Cypress Semiconductor Corp

IC SRAM 18MBIT 100MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고2,352

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

100MHz

-

8.5ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

AT28C64E-20JI

Microchip Technology

IC EEPROM 64KBIT 200NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 200µs
Access Time: 200ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고3,184

EEPROM

64Kb (8K x 8)

Parallel

-

200µs

200ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT28C256E-15FM/883

Microchip Technology

IC EEPROM 256KBIT 150NS 28FLATPK

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-CFlatPack
Supplier Device Package: 28-Flatpack, Ceramic Bottom-Brazed

패키지: 28-CFlatPack

재고5,168

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

150ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TC)

Surface Mount

28-CFlatPack

28-Flatpack, Ceramic Bottom-Brazed

70V3389S6BC

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 6NS 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (64K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고4,560

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (64K x 18)

Parallel

-

6ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

MT44K16M36RB-093E IT:B TR

Micron Technology Inc.

IC RLDRAM 576MBIT 1.067GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (16M x 36)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-TBGA
Supplier Device Package: 168-BGA

패키지: 168-TBGA

재고5,312

DRAM

576Mb (16M x 36)

Parallel

1067MHz

-

8ns

1.28 V ~ 1.42 V

-40°C ~ 95°C (TC)

Surface Mount

168-TBGA

168-BGA

7028L20PFI8

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고3,056

SRAM

SRAM - Dual Port, Asynchronous

1Mb (64K x 16)

Parallel

-

20ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT53B384M64D4EZ-062 WT:B TR

Micron Technology Inc.

IC SDRAM 24GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (384M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,040

DRAM

SDRAM - Mobile LPDDR4

24Gb (384M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

CY14V104LA-BA45XIT

Cypress Semiconductor Corp

IC NVSRAM 4MBIT 45NS 48FBGA

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)

패키지: 48-TFBGA

재고2,624

NVSRAM

NVSRAM (Non-Volatile SRAM)

4Mb (512K x 8)

Parallel

-

45ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-FBGA (6x10)

S26KS512SDPBHA023

Cypress Semiconductor Corp

FLASH MEMORY NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 96ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,128

FLASH

FLASH - NOR

512Mb (64M x 8)

Parallel

166MHz

-

96ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

-

MT47H64M8SH-25E IT:H

Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고3,904

DRAM

SDRAM - DDR2

512Mb (64M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 95°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

MT48LC4M16A2B4-6A IT:J

Micron Technology Inc.

IC SDRAM 64MBIT 167MHZ 54VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (8x8)

패키지: 54-VFBGA

재고6,288

DRAM

SDRAM

64Mb (4M x 16)

Parallel

167MHz

12ns

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-VFBGA

54-VFBGA (8x8)

MT28EW512ABA1HPC-0SIT

Micron Technology Inc.

IC FLASH SER NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8, 32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 95ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-LBGA (11x13)

패키지: 64-LBGA

재고2,208

FLASH

FLASH - NOR

512Mb (64M x 8, 32M x 16)

Parallel

-

60ns

95ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-LBGA (11x13)

24LC04B-I/MC

Microchip Technology

IC EEPROM 4KBIT 400KHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 8 x 2)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (2x3)

패키지: 8-VFDFN Exposed Pad

재고6,752

EEPROM

4Kb (256 x 8 x 2)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-VFDFN Exposed Pad

8-DFN (2x3)

71256SA15YGI8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 15NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

패키지: 28-BSOJ (0.300", 7.62mm Width)

재고12,636

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

15ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

47C16-I/W16K

Microchip Technology

IC EERAM 16K I2C 1MHZ WAFER

Memory Type: Non-Volatile
Memory Format: EERAM
Technology: EEPROM, SRAM
Memory Size: 16Kb (2K x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 1ms
Access Time: 400ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고5,168

EERAM

EEPROM, SRAM

16Kb (2K x 8)

I²C

1MHz

1ms

400ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

S29PL127J60TDI130H

Cypress Semiconductor Corp

IC FLASH MEM NOR 56TSOPI

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128M (8M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고6,800

FLASH

FLASH - NOR

128M (8M x 16)

Parallel

-

60ns

2.7 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

W632GG8NB15I-TR

Winbond Electronics

IC DRAM 2GBIT SSTL 15 78VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gbit
Memory Interface: SSTL_15
Clock Frequency: 667 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-VFBGA (8x10.5)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3

2Gbit

SSTL_15

667 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-VFBGA (8x10.5)

MX25U6472FZBI02

Macronix

MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 40µs, 3ms
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-USON (4x3)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

64Mbit

SPI - Quad I/O, QPI

133 MHz

40µs, 3ms

6 ns

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN Exposed Pad

8-USON (4x3)

MX30LF4G28AD-XKI

Macronix

IC FLASH 4GBIT PARALLEL 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: -

재고4,536

FLASH

FLASH - NAND (SLC)

4Gbit

Parallel

-

20ns

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

SM662GAA-BDST

Silicon Motion, Inc.

IC FLASH 128GBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 128Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

패키지: -

Request a Quote

FLASH

FLASH - NAND (TLC)

128Gbit

eMMC

-

-40°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

SST39LF020-55-4C-WHE-T

Microchip Technology

IC FLSH 2MBIT PARALLEL 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20µs
Access Time: 55 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-TSOP

패키지: -

Request a Quote

FLASH

FLASH - NOR

2Mbit

Parallel

-

20µs

55 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-TSOP

MB85RS256TYPNF-G-BCE1

Fujitsu Semiconductor Memory Solution

256KBIT FRAM WITH SPI, 1.8~3.6V,

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 256Kbit
Memory Interface: SPI
Clock Frequency: 33 MHz
Write Cycle Time - Word, Page: -
Access Time: 13 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

256Kbit

SPI

33 MHz

-

13 ns

1.8V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

MT62F1G64D8CH-031-WT-B-TR

Micron Technology Inc.

IC DRAM 64GBIT 3.2GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: -
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

64Gbit

-

3.2 GHz

-

1.05V

-25°C ~ 85°C (TC)

-

CY7C194-20VC

Cypress Semiconductor Corp

IC SRAM 256KBIT PARALLEL 24SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 24-SOJ

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

256Kbit

Parallel

-

20ns

20 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

24-BSOJ (0.300", 7.62mm Width)

24-SOJ

W25Q80DVWA

Winbond Electronics

IC FLASH 8MBIT SPI/QUAD 104MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 30µs, 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

FLASH

FLASH - NOR

8Mbit

SPI - Quad I/O

104 MHz

30µs, 3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

-