페이지 2 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일

기록 1,429
페이지  2/48
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제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IKQ150N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 160A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 160 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
  • Power - Max: 621 W
  • Switching Energy: 5.8mJ (on), 5.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 301 nC
  • Td (on/off) @ 25°C: 45ns/341ns
  • Test Condition: 400V, 150A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 84 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: -
재고528
650 V
160 A
600 A
1.65V @ 15V, 150A
621 W
5.8mJ (on), 5.4mJ (off)
Standard
301 nC
45ns/341ns
400V, 150A, 10Ohm, 15V
84 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
IKU15N60R
Infineon Technologies

IGBT TRENCH 600V 30A TO251-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 250 W
  • Switching Energy: 900µJ
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 16ns/183ns
  • Test Condition: 400V, 15A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 110 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package: PG-TO251-3
패키지: -
Request a Quote
600 V
30 A
45 A
2.1V @ 15V, 15A
250 W
900µJ
Standard
90 nC
16ns/183ns
400V, 15A, 15Ohm, 15V
110 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
PG-TO251-3
IGC41T120T8QX7SA2
Infineon Technologies

IGBT 1200V 40A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 40A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
1200 V
-
120 A
2.42V @ 15V, 40A
-
-
Standard
-
-
-
-
-
-
-
-
SIGC76T60R3EX1SA1
Infineon Technologies

IGBT TRENCH FS 600V 150A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 450 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
150 A
450 A
1.9V @ 15V, 150A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC15T60SEX7SA1
Infineon Technologies

IGBT 3 CHIP 600V

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
30 A
90 A
2.05V @ 15V, 30A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IGQ75N120S7XKSA1
Infineon Technologies

IGBT TRENCH 1200V 154A TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 154 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 630 W
  • Switching Energy: 5.13mJ (on), 3.48mJ (off)
  • Input Type: Standard
  • Gate Charge: 450 nC
  • Td (on/off) @ 25°C: 38ns/190ns
  • Test Condition: 600V, 75A, 2.1Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-55
패키지: -
재고606
1200 V
154 A
225 A
2V @ 15V, 75A
630 W
5.13mJ (on), 3.48mJ (off)
Standard
450 nC
38ns/190ns
600V, 75A, 2.1Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-55
IKFW90N60EH3XKSA1
Infineon Technologies

IGBT TRENCH FS 600V 77A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 77 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Power - Max: 178 W
  • Switching Energy: 2.65mJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 440 nC
  • Td (on/off) @ 25°C: 32ns/210ns
  • Test Condition: 400V, 75A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 107 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-AI
패키지: -
재고732
600 V
77 A
300 A
2.3V @ 15V, 75A
178 W
2.65mJ (on), 1.3mJ (off)
Standard
440 nC
32ns/210ns
400V, 75A, 5Ohm, 15V
107 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-AI
IPP319N20NM6AKSA1
Infineon Technologies

IGBT TRENCH 100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKZA75N120CH7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 109A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 109 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 549 W
  • Switching Energy: 2.01mJ (on), 1.76mJ (off)
  • Input Type: Standard
  • Gate Charge: 550 nC
  • Td (on/off) @ 25°C: 40ns/359ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 95 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-U02
패키지: -
재고510
1200 V
109 A
300 A
2.15V @ 15V, 75A
549 W
2.01mJ (on), 1.76mJ (off)
Standard
550 nC
40ns/359ns
-
95 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-U02
IKQB120N75CP2AKSA1
Infineon Technologies

IGBT 750V 150A TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 750 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 360 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
  • Power - Max: 577 W
  • Switching Energy: 6.4mJ (on), 3.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 481 nC
  • Td (on/off) @ 25°C: 57ns/285ns
  • Test Condition: 450V, 120A, 4.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-51
패키지: -
재고645
750 V
150 A
360 A
1.65V @ 15V, 120A
577 W
6.4mJ (on), 3.4mJ (off)
Standard
481 nC
57ns/285ns
450V, 120A, 4.8Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-51
IGB20N60H3ATMA1
Infineon Technologies

IGBT TRENCH FS 600V 40A TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 170 W
  • Switching Energy: 690µJ
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 16ns/194ns
  • Test Condition: 400V, 20A, 14.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: -
재고2,868
600 V
40 A
80 A
2.4V @ 15V, 20A
170 W
690µJ
Standard
120 nC
16ns/194ns
400V, 20A, 14.6Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
SIGC25T60SNCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 44ns/324ns
  • Test Condition: 400V, 30A, 11Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
30 A
90 A
2.5V @ 15V, 30A
-
-
Standard
-
44ns/324ns
400V, 30A, 11Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
FZ1200R16KF4S1NOSA1
Infineon Technologies

FZ1200R16 - INSULATED GATE BIPOL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AIMDQ75R140M1HXUMA1
Infineon Technologies

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIGC100T60R3EX1SA4
Infineon Technologies

IGBT 3 CHIP 600V 200A WAFER

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
200 A
600 A
1.9V @ 15V, 200A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC100T60R3EX1SA1
Infineon Technologies

IGBT TRENCH FS 600V 200A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
200 A
600 A
1.9V @ 15V, 200A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IGC13T120T8LX1SA1
Infineon Technologies

IGBT 1200V 10A SAWN ON FOIL

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 8A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
1200 V
-
30 A
2.07V @ 15V, 8A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
AIGB50N65F5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: -
Request a Quote
650 V
50 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IRGC14C40LD
Infineon Technologies

IGBT IGNITION LL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430 V
  • Current - Collector (Ic) (Max): 14 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.65V @ 4.5V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
430 V
14 A
-
2.65V @ 4.5V, 10A
-
-
Logic
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC76T60R3EX7SA1
Infineon Technologies

IGBT TRENCH FS 600V 150A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 450 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
150 A
450 A
1.9V @ 15V, 150A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKP28N65ES5XKSA1
Infineon Technologies

IGBT 650V 28A TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 28A
  • Power - Max: 130 W
  • Switching Energy: 530µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 50 nC
  • Td (on/off) @ 25°C: 27ns/184ns
  • Test Condition: 400V, 28A, 34Ohm, 15V
  • Reverse Recovery Time (trr): 73 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: -
Request a Quote
650 V
38 A
90 A
1.9V @ 15V, 28A
130 W
530µJ (on), 400µJ (off)
Standard
50 nC
27ns/184ns
400V, 28A, 34Ohm, 15V
73 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
SIGC11T60NCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 20ns/110ns
  • Test Condition: 300V, 10A, 27Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
10 A
30 A
2.5V @ 15V, 10A
-
-
Standard
-
20ns/110ns
300V, 10A, 27Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IRGC10B60KB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 2A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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600 V
10 A
-
1.3V @ 15V, 2A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
AUXTMGPS4070D2
Infineon Technologies

IGBT TRENCH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AUXTMGPS4070D1
Infineon Technologies

IGBT TRENCH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKW75N120CH7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 92A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 92 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 549 W
  • Switching Energy: 4.22mJ (on), 1.66mJ (off)
  • Input Type: Standard
  • Gate Charge: 535 nC
  • Td (on/off) @ 25°C: 55ns/461ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 145 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-U06
패키지: -
재고1,140
1200 V
92 A
300 A
2.15V @ 15V, 75A
549 W
4.22mJ (on), 1.66mJ (off)
Standard
535 nC
55ns/461ns
-
145 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-U06
SIGC18T60NCX1SA5
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
21ns/110ns
300V, 20A, 13Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC18T60NCX1SA6
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
21ns/110ns
300V, 20A, 13Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC18T60NCX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
21ns/110ns
300V, 20A, 13Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC18T60NCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
21ns/110ns
300V, 20A, 13Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die