페이지 3 - Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 8,381
페이지  3/280
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재고
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPP60R190E6XKSA1
Infineon Technologies

MOSFET N-CH 600V 20.2A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
패키지: -
재고5,955
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
3.5V @ 630µA
63 nC @ 10 V
1400 pF @ 100 V
±20V
-
151W (Tc)
190mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IQE050N08NM5CGATMA1
Infineon Technologies

TRENCH 40<-<100V PG-TTFN-9

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 49µA
  • Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PG-TTFN-9-1
  • Package / Case: 8-PowerTDFN
패키지: -
재고29,310
MOSFET (Metal Oxide)
80 V
16A (Ta), 101A (Tc)
6V, 10V
3.8V @ 49µA
43.2 nC @ 10 V
2900 pF @ 40 V
±20V
-
2.5W (Ta), 100W (Tc)
5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PG-TTFN-9-1
8-PowerTDFN
BSZ520N15NS3GATMA1
Infineon Technologies

MOSFET N-CH 150V 21A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
패키지: -
재고46,680
MOSFET (Metal Oxide)
150 V
21A (Tc)
8V, 10V
4V @ 35µA
12 nC @ 10 V
890 pF @ 75 V
±20V
-
57W (Tc)
52mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
ISC037N13NM6ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IQE004NE1LM7SCATMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 15 V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
  • Vgs(th) (Max) @ Id: 2V @ 432µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
  • Vgs (Max): ±7V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-WHSON-8
  • Package / Case: 8-PowerWDFN
패키지: -
재고15,000
MOSFET (Metal Oxide)
15 V
58A (Ta), 379A (Tc)
4.5V, 7V
2V @ 432µA
55 nC @ 7 V
6240 pF @ 7.5 V
±7V
-
2.1W (Ta), 89W (Tc)
0.45mOhm @ 30A, 7V
-55°C ~ 150°C (TJ)
Surface Mount
PG-WHSON-8
8-PowerWDFN
IPLK60R600PFD7ATMA1
Infineon Technologies

MOSFET N-CH 600V 7A THIN-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-52
  • Package / Case: 8-PowerTDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
7A (Tc)
10V
4.5V @ 80µA
8.5 nC @ 10 V
344 pF @ 400 V
±20V
-
45W (Tc)
600mOhm @ 1.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-52
8-PowerTDFN
BSS127IXTSA1
Infineon Technologies

SMALL SIGNAL MOSFETS PG-SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 8µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고20,598
MOSFET (Metal Oxide)
600 V
21mA (Ta)
4.5V, 10V
2.6V @ 8µA
0.65 nC @ 10 V
21 pF @ 25 V
±20V
-
500mW (Ta)
500Ohm @ 16mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT-23-3
TO-236-3, SC-59, SOT-23-3
94-2312PBF
Infineon Technologies

IC MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPB015N04NGATMA1
Infineon Technologies

MOSFET N-CH 40V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고6,495
MOSFET (Metal Oxide)
40 V
120A (Tc)
10V
4V @ 200µA
250 nC @ 10 V
20000 pF @ 20 V
±20V
-
250W (Tc)
1.5mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRLB3036PBFXKMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
195A (Tc)
4.5V, 10V
2.5V @ 250µA
140 nC @ 4.5 V
11210 pF @ 50 V
±16V
-
380W (Tc)
2.4mOhm @ 165A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IMZ120R220M1HXKSA1
Infineon Technologies

SICFET N-CH 1.2KV 13A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
  • Vgs (Max): +23V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-1
  • Package / Case: TO-247-4
패키지: -
재고1,053
SiCFET (Silicon Carbide)
1200 V
13A (Tc)
15V, 18V
5.7V @ 1.6mA
8.5 nC @ 18 V
289 pF @ 800 V
+23V, -7V
-
75W (Tc)
220mOhm @ 4A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
IPL60R225CFD7AUMA1
Infineon Technologies

MOSFET N-CH 600V 12A VSON-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 225mOhm @ 4.9A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-VSON-4-1
  • Package / Case: 4-PowerTSFN
패키지: -
재고9,000
MOSFET (Metal Oxide)
600 V
12A (Tc)
10V
4.5V @ 240µA
23 nC @ 10 V
1015 pF @ 400 V
±20V
-
68W (Tc)
225mOhm @ 4.9A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-VSON-4-1
4-PowerTSFN
AUIRLR2703TRL
Infineon Technologies

MOSFET N-CH 30V 20A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
20A (Tc)
-
1V @ 250µA
15 nC @ 4.5 V
450 pF @ 25 V
-
-
45W (Tc)
45mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB65R190C7ATMA2
Infineon Technologies

MOSFET N-CH 650V 13A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 290µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 72W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고1,890
MOSFET (Metal Oxide)
650 V
13A (Tc)
10V
4V @ 290µA
23 nC @ 10 V
1150 pF @ 400 V
±20V
-
72W (Tc)
190mOhm @ 5.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPD95R450P7ATMA1
Infineon Technologies

MOSFET N-CH 950V 14A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 360µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고6,282
MOSFET (Metal Oxide)
950 V
14A (Tc)
10V
3.5V @ 360µA
35 nC @ 10 V
1053 pF @ 400 V
±20V
-
104W (Tc)
450mOhm @ 7.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB030N08N3GATMA1
Infineon Technologies

MOSFET N-CH 80V 160A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 155µA
  • Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
패키지: -
재고8,244
MOSFET (Metal Oxide)
80 V
160A (Tc)
6V, 10V
3.5V @ 155µA
117 nC @ 10 V
8110 pF @ 40 V
±20V
-
214W (Tc)
3mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
IGT60R070D1ATMA4
Infineon Technologies

GANFET N-CH

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
  • Vgs (Max): -10V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-3
  • Package / Case: 8-PowerSFN
패키지: -
재고8,799
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-
380 pF @ 400 V
-10V
-
125W (Tc)
-
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-3
8-PowerSFN
IGT60R070D1ATMA1
Infineon Technologies

GANFET N-CH 600V 31A 8HSOF

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
  • Vgs (Max): -10V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-3
  • Package / Case: 8-PowerSFN
패키지: -
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GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-
380 pF @ 400 V
-10V
-
125W (Tc)
-
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-3
8-PowerSFN
IPD390P06NMSAUMA1
Infineon Technologies

MOSFET P-CH 60V TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
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MOSFET (Metal Oxide)
60 V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPTG044N15NM5ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 235µA
  • Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOG-8
  • Package / Case: 8-PowerSMD, Gull Wing
패키지: -
재고1,842
MOSFET (Metal Oxide)
150 V
19.4A (Ta), 174A (Tc)
8V, 10V
4.6V @ 235µA
89 nC @ 10 V
7000 pF @ 75 V
±20V
-
3.8W (Ta), 300W (Tc)
4.4mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOG-8
8-PowerSMD, Gull Wing
SPP18P06PHXKSA1
Infineon Technologies

MOSFET P-CH 60V 18.7A TO220-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 81.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
패키지: -
재고1,821
MOSFET (Metal Oxide)
60 V
18.7A (Ta)
10V
4V @ 1mA
28 nC @ 10 V
860 pF @ 25 V
±20V
-
81.1W (Ta)
130mOhm @ 13.2A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IMBG65R107M1HXTMA1
Infineon Technologies

SILICON CARBIDE MOSFET PG-TO263-

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
  • Vgs (Max): +23V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
패키지: -
재고2,955
SiCFET (Silicon Carbide)
650 V
24A (Tc)
18V
5.7V @ 2.6mA
15 nC @ 18 V
496 pF @ 400 V
+23V, -5V
-
110W (Tc)
141mOhm @ 8.9A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IAUCN04S7L005ATMA1
Infineon Technologies

MOSFET_(20V 40V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 95µA
  • Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-43
  • Package / Case: 8-PowerTDFN
패키지: -
재고3,000
MOSFET (Metal Oxide)
40 V
430A (Tj)
4.5V, 10V
1.8V @ 95µA
141 nC @ 10 V
9415 pF @ 20 V
±16V
-
179W (Tc)
0.52mOhm @ 88A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-43
8-PowerTDFN
IMBG65R039M1HXTMA1
Infineon Technologies

SILICON CARBIDE MOSFET PG-TO263-

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
  • Vgs (Max): +23V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 211W (Tc)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
패키지: -
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SiCFET (Silicon Carbide)
650 V
54A (Tc)
18V
5.7V @ 7.5mA
41 nC @ 18 V
1393 pF @ 400 V
+23V, -5V
-
211W (Tc)
51mOhm @ 25A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMW65R057M1HXKSA1
Infineon Technologies

SILICON CARBIDE MOSFET, PG-TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
  • Vgs (Max): +20V, -2V
  • FET Feature: -
  • Power Dissipation (Max): 133W (Tc)
  • Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
패키지: -
재고306
SiCFET (Silicon Carbide)
650 V
35A (Tc)
18V
5.7V @ 5mA
28 nC @ 18 V
930 pF @ 400 V
+20V, -2V
-
133W (Tc)
74mOhm @ 16.7A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
BSC220N20NSFDATMA1
Infineon Technologies

MOSFET N-CH 200V 52A TSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 137µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSON-8-3
  • Package / Case: 8-PowerTDFN
패키지: -
재고34,863
MOSFET (Metal Oxide)
200 V
52A (Tc)
10V
4V @ 137µA
43 nC @ 10 V
3680 pF @ 100 V
±20V
-
214W (Tc)
22mOhm @ 52A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSON-8-3
8-PowerTDFN
IMT65R022M1HXUMA1
Infineon Technologies

SILICON CARBIDE MOSFET

  • FET Type: -
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
패키지: -
재고5,883
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
IPBE65R230CFD7AATMA1
Infineon Technologies

MOSFET N-CH 650V 11A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-3-10
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
패키지: -
재고7,263
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
4.5V @ 260µA
23 nC @ 10 V
1044 pF @ 400 V
±20V
-
63W (Tc)
230mOhm @ 5.2A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO263-7-3-10
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
IPT60T065S7XTMA1
Infineon Technologies

HIGH POWER_NEW

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IMW120R045M1XKSA1
Infineon Technologies

SICFET N-CH 1.2KV 52A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 5.7V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
  • Vgs (Max): +20V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 228W (Tc)
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
패키지: -
재고174
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
5.7V @ 10mA
52 nC @ 15 V
1900 pF @ 800 V
+20V, -10V
-
228W (Tc)
59mOhm @ 20A, 15V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3