페이지 182 - IXYS 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
IXGT24N170A	IXYS	IGBT 1700V 24A 250W TO268 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A Power - Max: 250W Switching Energy: 2.97mJ (on), 790µJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25°C: 21ns/336ns Test Condition: 850V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고4,016
IXA37IF1200HJ	IXYS	IGBT 1200V 58A 195W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 58A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Power - Max: 195W Switching Energy: 3.8mJ (on), 4.1mJ (off) Input Type: Standard Gate Charge: 106nC Td (on/off) @ 25°C: - Test Condition: 600V, 35A, 27 Ohm, 15V Reverse Recovery Time (trr): 350ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	패키지: ISOPLUS247?	재고7,856
IXGQ180N33TCD1	IXYS	IGBT 330V 180A TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 180A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고5,952
IXXK160N65B4	IXYS	IGBT 650V 310A 940W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 310A Current - Collector Pulsed (Icm): 860A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A Power - Max: 940W Switching Energy: 3.3mJ (on), 1.88mJ (off) Input Type: Standard Gate Charge: 425nC Td (on/off) @ 25°C: 52ns/220ns Test Condition: 400V, 80A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXXK)	패키지: TO-264-3, TO-264AA	재고6,928
MIXA60WB1200TEH	IXYS	IGBT MODULE 1200V 60A IGBT Type: PT Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Power - Max: 290W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A Current - Collector Cutoff (Max): 500µA Input Capacitance (Cies) @ Vce: - Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E3 Supplier Device Package: E3	패키지: E3	재고6,640
IXBN75N170	IXYS	IGBT BIMOSFET 1700V 145A SOT227B IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 145A Power - Max: 625W Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A Current - Collector Cutoff (Max): 25µA Input Capacitance (Cies) @ Vce: 6.93nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고5,760
MIXA10WB1200TED	IXYS	IGBT MODULE 1200V 12A HEX IGBT Type: PT Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 17A Power - Max: 60W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 9A Current - Collector Cutoff (Max): 700µA Input Capacitance (Cies) @ Vce: - Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	패키지: E2	재고3,776
IXTC280N055T	IXYS	MOSFET N-CH 55V 145A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	패키지: ISOPLUS220?	재고5,632
IXFR90N20Q	IXYS	MOSFET N-CH 200V ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	패키지: ISOPLUS247?	재고7,920
IXFR24N100	IXYS	MOSFET N-CH 1KV 22A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	패키지: ISOPLUS247?	재고5,088
IXTR20P50P	IXYS	MOSFET P-CH 500V 13A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 490 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	패키지: ISOPLUS247?	재고4,176
IXTT24P20	IXYS	MOSFET P-CH 200V 24A TO-268 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고5,968
IXTQ150N06P	IXYS	MOSFET N-CH 60V 150A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고103,464
VMM90-09F	IXYS	MOSFET 2N-CH 900V 85A Y3-LI FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 85A Rds On (Max) @ Id, Vgs: 76 mOhm @ 65A, 10V Vgs(th) (Max) @ Id: 5V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 960nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-Li Supplier Device Package: Y3-Li	패키지: Y3-Li	재고3,792
MLO36-16IO1	IXYS	MODULE AC CTLR 1600V KAMM-MODUL Structure: 1-Phase Controller - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 18A Current - On State (It (RMS)) (Max): 28A Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 65mA Current - Non Rep. Surge 50, 60Hz (Itsm): 360A, 390A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	패키지: Module	재고6,800
VWO85-08IO1	IXYS	MODULE AC CTLR 3PH 800V V2-PACK Structure: 3-Phase Controller - All SCRs Number of SCRs, Diodes: 6 SCRs Voltage - Off State: 800V Current - On State (It (AV)) (Max): 27A Current - On State (It (RMS)) (Max): 59A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	패키지: Module	재고3,616
DSA1-16D	IXYS	DIODE AVALANCHE 1.6KV 2.3A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 2.3A Voltage - Forward (Vf) (Max) @ If: 1.34V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 1600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Radial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Radial	재고20,400
DSB30C30PB	IXYS	DIODE ARRAY SCHOTTKY 30V TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 510mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 30V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고5,904
VUB160-12NO2	IXYS	RECT BRIDGE 3PH 1200V V2-PACK Diode Type: Three Phase (Braking) Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 188A Voltage - Forward (Vf) (Max) @ If: 2.7V @ 30A Current - Reverse Leakage @ Vr: 300µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V2-PAK Supplier Device Package: V2-PAK	패키지: V2-PAK	재고5,920
VUO190-14NO7	IXYS	RECT BRIDGE 3PH 1400V PWS-E-1 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 248A Voltage - Forward (Vf) (Max) @ If: 1.07V @ 80A Current - Reverse Leakage @ Vr: 200µA @ 1400V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-E1 Supplier Device Package: PWS-E1	패키지: PWS-E1	재고2,080
VUE75-12NO7	IXYS	3 PHASE/FULL WAVE 74A BRDG RECT Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 74A Voltage - Forward (Vf) (Max) @ If: 2.71V @ 30A Current - Reverse Leakage @ Vr: 250µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1 Supplier Device Package: ECO-PAC1	패키지: ECO-PAC1	재고3,952
VUO86-08NO7	IXYS	RECT BRIDGE 3PH 800V ECO-PAC1 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 86A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A Current - Reverse Leakage @ Vr: 40µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1 Supplier Device Package: ECO-PAC1	패키지: ECO-PAC1	재고6,256
IXBOD1-25R	IXYS	IC DIODE MODULE BOD 0.9A 2500V Voltage - Clamping: 2500V (2.5kV) Technology: Mixed Technology Number of Circuits: 3 Number of Circuits: 3 Applications: High Voltage Mounting Type: PCB, Through Hole Package / Case: Radial Supplier Device Package: BOD	패키지: Radial	재고7,380
IXBOD1-19R	IXYS	IC DIODE MODULE BOD 1.25A 1900V Voltage - Clamping: 1900V (1.9kV) Technology: Mixed Technology Number of Circuits: 2 Number of Circuits: 2 Applications: High Voltage Mounting Type: PCB, Through Hole Package / Case: Radial Supplier Device Package: BOD	패키지: Radial	재고2,466
IXYP20N65C3	IXYS	DISC IGBT XPT-GENX3 TO-220AB/FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 105 A Vce(on) (Max) @ Vge, Ic: - Power - Max: 200 W Switching Energy: - Input Type: - Gate Charge: 30 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 135 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
IXYX25N250CV1	IXYS	IGBT 2500V 235A PLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector (Ic) (Max): 95 A Current - Collector Pulsed (Icm): 235 A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Power - Max: 937 W Switching Energy: 8.3mJ (on), 7.3mJ (off) Input Type: Standard Gate Charge: 147 nC Td (on/off) @ 25°C: 15ns/230ns Test Condition: 1250V, 25A, 5Ohm, 15V Reverse Recovery Time (trr): 220 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3	패키지: -	Request a Quote
IXFP34N60X2A	IXYS	MOSFET N-CH TO220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote
MCC162-16IO1B	IXYS	BIPOLAR MODULE - THYRISTOR Y4-M Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6 kV Current - On State (It (AV)) (Max): 181 A Current - On State (It (RMS)) (Max): 300 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A Current - Hold (Ih) (Max): 200 mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Y4-M6	패키지: -	Request a Quote
IXFN170N65X2	IXYS	MOSFET N-CH 650V 170A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1170W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: -	재고60
IXFX400N15X3	IXYS	MOSFET N-CH 150V 400A PLUS247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3 Variant	패키지: -	Request a Quote

IXGT24N170A

IXYS

IGBT 1700V 24A 250W TO268

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
Power - Max: 250W
Switching Energy: 2.97mJ (on), 790µJ (off)
Input Type: Standard
Gate Charge: 140nC
Td (on/off) @ 25°C: 21ns/336ns
Test Condition: 850V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고4,016

IXA37IF1200HJ

IXYS

IGBT 1200V 58A 195W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 58A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Power - Max: 195W
Switching Energy: 3.8mJ (on), 4.1mJ (off)
Input Type: Standard
Gate Charge: 106nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 35A, 27 Ohm, 15V
Reverse Recovery Time (trr): 350ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

패키지: ISOPLUS247?

재고7,856

IXGQ180N33TCD1

IXYS

IGBT 330V 180A TO3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 330V
Current - Collector (Ic) (Max): 180A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고5,952

IXXK160N65B4

IXYS

IGBT 650V 310A 940W TO264

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 310A
Current - Collector Pulsed (Icm): 860A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Power - Max: 940W
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Input Type: Standard
Gate Charge: 425nC
Td (on/off) @ 25°C: 52ns/220ns
Test Condition: 400V, 80A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXXK)

패키지: TO-264-3, TO-264AA

재고6,928

MIXA60WB1200TEH

IXYS

IGBT MODULE 1200V 60A

IGBT Type: PT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 85A
Power - Max: 290W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: -
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3

패키지: E3

재고6,640

IXBN75N170

IXYS

IGBT BIMOSFET 1700V 145A SOT227B

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 145A
Power - Max: 625W
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Current - Collector Cutoff (Max): 25µA
Input Capacitance (Cies) @ Vce: 6.93nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고5,760

MIXA10WB1200TED

IXYS

IGBT MODULE 1200V 12A HEX

IGBT Type: PT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 17A
Power - Max: 60W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 9A
Current - Collector Cutoff (Max): 700µA
Input Capacitance (Cies) @ Vce: -
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

패키지: E2

재고3,776

IXTC280N055T

IXYS

MOSFET N-CH 55V 145A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

패키지: ISOPLUS220?

재고5,632

IXFR90N20Q

IXYS

MOSFET N-CH 200V ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

패키지: ISOPLUS247?

재고7,920

IXFR24N100

IXYS

MOSFET N-CH 1KV 22A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

패키지: ISOPLUS247?

재고5,088

IXTR20P50P

IXYS

MOSFET P-CH 500V 13A ISOPLUS247

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 490 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

패키지: ISOPLUS247?

재고4,176

IXTT24P20

IXYS

MOSFET P-CH 200V 24A TO-268

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고5,968

IXTQ150N06P

IXYS

MOSFET N-CH 60V 150A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고103,464

VMM90-09F

IXYS

MOSFET 2N-CH 900V 85A Y3-LI

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 85A
Rds On (Max) @ Id, Vgs: 76 mOhm @ 65A, 10V
Vgs(th) (Max) @ Id: 5V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 960nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Supplier Device Package: Y3-Li

패키지: Y3-Li

재고3,792

MLO36-16IO1

IXYS

MODULE AC CTLR 1600V KAMM-MODUL

Structure: 1-Phase Controller - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 18A
Current - On State (It (RMS)) (Max): 28A
Voltage - Gate Trigger (Vgt) (Max): 1V
Current - Gate Trigger (Igt) (Max): 65mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 360A, 390A
Current - Hold (Ih) (Max): 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

패키지: Module

재고6,800

VWO85-08IO1

IXYS

MODULE AC CTLR 3PH 800V V2-PACK

Structure: 3-Phase Controller - All SCRs
Number of SCRs, Diodes: 6 SCRs
Voltage - Off State: 800V
Current - On State (It (AV)) (Max): 27A
Current - On State (It (RMS)) (Max): 59A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

패키지: Module

재고3,616

DSA1-16D

IXYS

DIODE AVALANCHE 1.6KV 2.3A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 2.3A
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 700µA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Radial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Radial

재고20,400

DSB30C30PB

IXYS

DIODE ARRAY SCHOTTKY 30V TO220AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 30V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고5,904

VUB160-12NO2

IXYS

RECT BRIDGE 3PH 1200V V2-PACK

Diode Type: Three Phase (Braking)
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 188A
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 30A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V2-PAK
Supplier Device Package: V2-PAK

패키지: V2-PAK

재고5,920

VUO190-14NO7

IXYS

RECT BRIDGE 3PH 1400V PWS-E-1

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1400V
Current - Average Rectified (Io): 248A
Voltage - Forward (Vf) (Max) @ If: 1.07V @ 80A
Current - Reverse Leakage @ Vr: 200µA @ 1400V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-E1
Supplier Device Package: PWS-E1

패키지: PWS-E1

재고2,080

VUE75-12NO7

IXYS

3 PHASE/FULL WAVE 74A BRDG RECT

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 74A
Voltage - Forward (Vf) (Max) @ If: 2.71V @ 30A
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Supplier Device Package: ECO-PAC1

패키지: ECO-PAC1

재고3,952

VUO86-08NO7

IXYS

RECT BRIDGE 3PH 800V ECO-PAC1

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 86A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
Current - Reverse Leakage @ Vr: 40µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Supplier Device Package: ECO-PAC1

패키지: ECO-PAC1

재고6,256

IXBOD1-25R

IXYS

IC DIODE MODULE BOD 0.9A 2500V

Voltage - Clamping: 2500V (2.5kV)
Technology: Mixed Technology
Number of Circuits: 3
Number of Circuits: 3
Applications: High Voltage
Mounting Type: PCB, Through Hole
Package / Case: Radial
Supplier Device Package: BOD

패키지: Radial

재고7,380

IXBOD1-19R

IXYS

IC DIODE MODULE BOD 1.25A 1900V

Voltage - Clamping: 1900V (1.9kV)
Technology: Mixed Technology
Number of Circuits: 2
Number of Circuits: 2
Applications: High Voltage
Mounting Type: PCB, Through Hole
Package / Case: Radial
Supplier Device Package: BOD

패키지: Radial

재고2,466

IXYP20N65C3

IXYS

DISC IGBT XPT-GENX3 TO-220AB/FP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 105 A
Vce(on) (Max) @ Vge, Ic: -
Power - Max: 200 W
Switching Energy: -
Input Type: -
Gate Charge: 30 nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 135 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

IXYX25N250CV1

IXYS

IGBT 2500V 235A PLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 95 A
Current - Collector Pulsed (Icm): 235 A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Power - Max: 937 W
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Input Type: Standard
Gate Charge: 147 nC
Td (on/off) @ 25°C: 15ns/230ns
Test Condition: 1250V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr): 220 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PLUS247™-3

패키지: -

Request a Quote

IXFP34N60X2A

IXYS

MOSFET N-CH TO220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

MCC162-16IO1B

IXYS

BIPOLAR MODULE - THYRISTOR Y4-M

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.6 kV
Current - On State (It (AV)) (Max): 181 A
Current - On State (It (RMS)) (Max): 300 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Current - Hold (Ih) (Max): 200 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6

패키지: -

Request a Quote

IXFN170N65X2

IXYS

MOSFET N-CH 650V 170A SOT227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: -

재고60

IXFX400N15X3

IXYS

MOSFET N-CH 150V 400A PLUS247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3 Variant

패키지: -

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