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부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A DUAL HS TO220-5
|
패키지: TO-220-5 |
재고10,176 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL IN/NON 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
재고42,504 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
MOSFET DVR ULT FAST 14A 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고4,752 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DIFF 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고104,760 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL ENABLE 8DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고9,948 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A INV 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고94,896 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL ENABLE 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고14,676 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고15,636 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-SO
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고87,648 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고29,334 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
패키지: 8-VDFN Exposed Pad |
재고18,336 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (3x3) |
||
IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고23,262 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO263
|
패키지: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
재고17,232 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
||
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO263
|
패키지: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
재고14,772 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
||
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220
|
패키지: TO-220-5 |
재고23,808 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE TO-263-5
|
패키지: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
재고20,616 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
||
IXYS Integrated Circuits Division |
MOSFET N-CH 14A LO SIDE TO-220-5
|
패키지: TO-220-5 |
재고18,744 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
재고45,276 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL ENABLE 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
재고19,848 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A INV 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
재고9,060 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
재고22,020 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
재고37,320 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고62,292 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고89,682 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
DUAL LOW SIDE MOSFET DRIVER
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고128,988 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC MOSFET DVR NONINV 1.5A 8-DFN
|
패키지: 8-VDFN Exposed Pad |
재고121,404 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (3x3) |
||
IXYS Integrated Circuits Division |
3A DUAL NON-INVERTING LOW SIDE G
|
패키지: 8-DIP (0.300", 7.62mm) |
재고4,288 |
|
Independent | 2 | IGBT | 4.5 V ~ 35 V | 0.8V, 3V | 3A, 3A | CMOS/TTL | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
IXYS Integrated Circuits Division |
5A, DUAL LOW-SIDE, NON-INVERTING
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고6,272 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.5V | 5A, 5A | CMOS/TTL | - | 7ns, 7ns | -55°C ~ 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
5A, DUAL LOW-SIDE, NON-INVERTING
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고5,888 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.5V | 5A, 5A | CMOS/TTL | - | 7ns, 7ns | -55°C ~ 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
4 AMP GATE DRIVER, FOR WHOLE WAF
|
패키지: - |
재고4,992 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |