페이지 3 - GeneSiC Semiconductor 제품

부품 번호	제조업체	설명	패키지	재고
2N7637-GA	GeneSiC Semiconductor	TRANS SJT 650V 7A TO-257 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) (165°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V Vgs (Max): - FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	패키지: TO-257-3	재고3,536
MURH7040R	GeneSiC Semiconductor	DIODE FAST REC 400V 70A D67 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 155°C	패키지: D-67	재고4,944
MBRH30040L	GeneSiC Semiconductor	DIODE SCHOTTKY 40V 300A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고6,240
MBRH30020RL	GeneSiC Semiconductor	DIODE SCHOTTKY 20V 300A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고4,384
MBRH15045L	GeneSiC Semiconductor	DIODE MODULE 45V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67	재고6,464
S400QR	GeneSiC Semiconductor	DIODE GEN PURP REV 1.2KV DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 200°C	패키지: DO-205AB, DO-9, Stud	재고2,224
S320Q	GeneSiC Semiconductor	DIODE GEN PURP 1.2KV 320A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 320A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 180°C	패키지: DO-205AB, DO-9, Stud	재고7,056
1N4590R	GeneSiC Semiconductor	DIODE GEN REV 400V 150A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	패키지: DO-205AA, DO-8, Stud	재고4,960
1N5830	GeneSiC Semiconductor	DIODE SCHOTTKY 25V 25A DO4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 580mV @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고13,860
MUR7040R	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-203AB, DO-5, Stud	재고4,704
FR70GR05	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고3,376
GKN26/14	GeneSiC Semiconductor	DIODE GEN PURP 1.4KV 25A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-203AA, DO-4, Stud	재고5,280
FR16D02	GeneSiC Semiconductor	DIODE GEN PURP 200V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고6,640
MBR3560R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 60V DO4 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 750mV @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고7,088
MURF30010R	GeneSiC Semiconductor	DIODE GEN PURP 100V 150A TO244 Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 1V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 100V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244	패키지: TO-244AB	재고6,912
MURF30010	GeneSiC Semiconductor	DIODE GEN PURP 100V 150A TO244 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 1V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 100V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244	패키지: TO-244AB	재고4,896
MBRTA80020R	GeneSiC Semiconductor	DIODE SCHOTTKY 20V 400A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 400A Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고7,632
MBRTA60020R	GeneSiC Semiconductor	DIODE SCHOTTKY 20V 300A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 300A Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고5,072
MBRF500150R	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 250A TO244AB Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io) (per Diode): 250A Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 150V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	패키지: TO-244AB	재고2,016
MURTA600120R	GeneSiC Semiconductor	DIODE GEN 1.2KV 300A 3 TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 300A Voltage - Forward (Vf) (Max) @ If: 2.6V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 1200V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고2,912
MBRT30040	GeneSiC Semiconductor	DIODE MODULE 40V 300A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고4,848
MURT10010	GeneSiC Semiconductor	DIODE MODULE 100V 100A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고3,952
MUR30010CTR	GeneSiC Semiconductor	DIODE MODULE 100V 300A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고7,952
MSRT200140(A)	GeneSiC Semiconductor	DIODE MODULE 1.4KV 200A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고3,152
MUR10010CT	GeneSiC Semiconductor	DIODE MODULE 100V 100A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고6,000
MBRT30030	GeneSiC Semiconductor	DIODE MODULE 30V 300A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고5,408
FST10030	GeneSiC Semiconductor	DIODE MODULE 30V 100A TO249AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: TO-249AB Supplier Device Package: TO-249AB	패키지: TO-249AB	재고6,384
KBPM210G	GeneSiC Semiconductor	DIODE BRIDGE 1000V 2A KBPM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM	패키지: 4-SIP, KBPM	재고4,720
BR102	GeneSiC Semiconductor	DIODE BRIDGE 200V 10A BR-10 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, BR-10 Supplier Device Package: BR-10	패키지: 4-Square, BR-10	재고4,080
KBU6G	GeneSiC Semiconductor	DIODE BRIDGE 400V 6A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	패키지: 4-SIP, KBU	재고2,416

2N7637-GA

GeneSiC Semiconductor

TRANS SJT 650V 7A TO-257

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-257
Package / Case: TO-257-3

패키지: TO-257-3

재고3,536

MURH7040R

GeneSiC Semiconductor

DIODE FAST REC 400V 70A D67

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 25µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C

패키지: D-67

재고4,944

MBRH30040L

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 300A D67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고6,240

MBRH30020RL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A D67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고4,384

MBRH15045L

GeneSiC Semiconductor

DIODE MODULE 45V 150A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67

재고6,464

S400QR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 400A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -60°C ~ 200°C

패키지: DO-205AB, DO-9, Stud

재고2,224

S320Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 320A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 320A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -60°C ~ 180°C

패키지: DO-205AB, DO-9, Stud

재고7,056

1N4590R

GeneSiC Semiconductor

DIODE GEN REV 400V 150A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C

패키지: DO-205AA, DO-8, Stud

재고4,960

1N5830

GeneSiC Semiconductor

DIODE SCHOTTKY 25V 25A DO4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고13,860

MUR7040R

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-203AB, DO-5, Stud

재고4,704

FR70GR05

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고3,376

GKN26/14

GeneSiC Semiconductor

DIODE GEN PURP 1.4KV 25A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-203AA, DO-4, Stud

재고5,280

FR16D02

GeneSiC Semiconductor

DIODE GEN PURP 200V 16A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고6,640

MBR3560R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 60V DO4

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고7,088

MURF30010R

GeneSiC Semiconductor

DIODE GEN PURP 100V 150A TO244

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 100V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244

패키지: TO-244AB

재고6,912

MURF30010

GeneSiC Semiconductor

DIODE GEN PURP 100V 150A TO244

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 100V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244

패키지: TO-244AB

재고4,896

MBRTA80020R

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 400A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 400A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고7,632

MBRTA60020R

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고5,072

MBRF500150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 250A TO244AB

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io) (per Diode): 250A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 150V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244AB

패키지: TO-244AB

재고2,016

MURTA600120R

GeneSiC Semiconductor

DIODE GEN 1.2KV 300A 3 TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 1200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고2,912

MBRT30040

GeneSiC Semiconductor

DIODE MODULE 40V 300A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고4,848

MURT10010

GeneSiC Semiconductor

DIODE MODULE 100V 100A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고3,952

MUR30010CTR

GeneSiC Semiconductor

DIODE MODULE 100V 300A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고7,952

MSRT200140(A)

GeneSiC Semiconductor

DIODE MODULE 1.4KV 200A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고3,152

MUR10010CT

GeneSiC Semiconductor

DIODE MODULE 100V 100A 2TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고6,000

MBRT30030

GeneSiC Semiconductor

DIODE MODULE 30V 300A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고5,408

FST10030

GeneSiC Semiconductor

DIODE MODULE 30V 100A TO249AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB

패키지: TO-249AB

재고6,384

KBPM210G

GeneSiC Semiconductor

DIODE BRIDGE 1000V 2A KBPM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

재고4,720

BR102

GeneSiC Semiconductor

DIODE BRIDGE 200V 10A BR-10

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, BR-10
Supplier Device Package: BR-10

패키지: 4-Square, BR-10

재고4,080

KBU6G

GeneSiC Semiconductor

DIODE BRIDGE 400V 6A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 10µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

패키지: 4-SIP, KBU

재고2,416