페이지 9 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BCW60E6422HTMA1	Infineon Technologies	TRANSISTOR AF SOT23 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,088	-	-	-	-	-	-	-	-	-	-	-
2SC3669-Y(T2OMI,FM	Toshiba Semiconductor and Storage	TRANS NPN 2A 80V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	패키지: SC-71	재고2,256	2A	80V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC6054G0L	Panasonic Electronic Components	TRANS NPN 50V 0.1A SSMINI-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Power - Max: 125mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3	패키지: SC-89, SOT-490	재고2,768	100mA	50V	300mV @ 10mA, 100mA	100µA	160 @ 2mA, 10V	125mW	100MHz	125°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F3
MPSA63_D27Z	Fairchild/ON Semiconductor	TRANS PNP DARL 30V 1.2A TO-92 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: 125MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,040	1.2A	30V	1.5V @ 100µA, 100mA	100nA (ICBO)	10000 @ 100mA, 5V	625mW	125MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSC2859OMTF	Fairchild/ON Semiconductor	TRANS NPN 30V 0.5A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,544	500mA	30V	250mV @ 10mA, 100mA	100nA	70 @ 100mA, 1V	150mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
KSA1175RTA	Fairchild/ON Semiconductor	TRANS PNP 50V 0.15A TO-92S Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Power - Max: 250mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	패키지: TO-226-3, TO-92-3 Short Body (Formed Leads)	재고3,552	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	40 @ 1mA, 6V	250mW	180MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body (Formed Leads)	TO-92S
BC556CBU	Fairchild/ON Semiconductor	TRANS PNP 65V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고6,400	100mA	65V	650mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	500mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC309BTA	Fairchild/ON Semiconductor	TRANS PNP 25V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,016	100mA	25V	500mV @ 5mA, 100mA	15nA	180 @ 2mA, 5V	500mW	130MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5089TF	Fairchild/ON Semiconductor	TRANS NPN 25V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V Power - Max: 625mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,312	100mA	25V	500mV @ 1mA, 10mA	50nA (ICBO)	400 @ 100µA, 5V	625mW	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N3905TF	Fairchild/ON Semiconductor	TRANS PNP 40V 0.2A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,816	200mA	40V	400mV @ 5mA, 50mA	-	50 @ 10mA, 1V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SB1236ATV2P	Rohm Semiconductor	TRANS PNP 160V 1.5A ATV Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: ATV Supplier Device Package: ATV	패키지: ATV	재고6,400	1.5A	160V	2V @ 100mA, 1A	1µA (ICBO)	82 @ 100mA, 5V	1W	50MHz	150°C (TJ)	Through Hole	ATV	ATV
MPSW05	ON Semiconductor	TRANS NPN 60V 0.5A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V Power - Max: 1W Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 Long Body	재고5,744	500mA	60V	400mV @ 10mA, 250mA	500nA	60 @ 250mA, 1V	1W	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92
MMBT4401T-7	Diodes Incorporated	TRANS NPN 40V 0.6A SOT-523 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Power - Max: 150mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고14,808	600mA	40V	750mV @ 50mA, 500mA	-	100 @ 150mA, 1V	150mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
HD1750FX	STMicroelectronics	TRANS NPN 800V 24A ISOWATT218 Transistor Type: NPN Current - Collector (Ic) (Max): 24A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 6.5 @ 12A, 5V Power - Max: 75W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOWATT218FX Supplier Device Package: ISOWATT-218FX	패키지: ISOWATT218FX	재고82,992	24A	800V	3V @ 3A, 12A	200µA	6.5 @ 12A, 5V	75W	-	150°C (TJ)	Through Hole	ISOWATT218FX	ISOWATT-218FX
2SC4518A	Sanken	TRANS NPN 550V 5A TO220F Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 550V Vce Saturation (Max) @ Ib, Ic: 500mV @ 360mA, 1.8A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1.8A, 4V Power - Max: 35W Frequency - Transition: 6MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack	재고14,988	5A	550V	500mV @ 360mA, 1.8A	100µA (ICBO)	10 @ 1.8A, 4V	35W	6MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
MMST2907A-7	Diodes Incorporated	TRANS PNP 60V 0.6A SC70-3 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고6,752	600mA	60V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	200mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BD437TG	ON Semiconductor	TRANS NPN 45V 4A TO-225AA Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 36W Frequency - Transition: 3MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-225AA	패키지: TO-225AA, TO-126-3	재고3,600	4A	45V	800mV @ 300mA, 3A	100µA (ICBO)	85 @ 500mA, 1V	36W	3MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-225AA
PBSS4230QAZ	Nexperia USA Inc.	TRANS NPN 30V 2A DFN1010D-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Power - Max: 325mW Frequency - Transition: 190MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3	패키지: 3-XDFN Exposed Pad	재고5,184	2A	30V	190mV @ 50mA, 1A	100nA (ICBO)	100 @ 2A, 2V	325mW	190MHz	150°C (TJ)	Surface Mount	3-XDFN Exposed Pad	DFN1010D-3
PBHV9115T,215	Nexperia USA Inc.	TRANS PNP 150V 1A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V Power - Max: 300mW Frequency - Transition: 115MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고6,320	1A	150V	300mV @ 100mA, 500mA	100nA	100 @ 100mA, 10V	300mW	115MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
2SC5200-O(Q)	Toshiba Semiconductor and Storage	TRANS NPN 230V 15A TO-3PL Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	패키지: TO-3PL	재고304,956	15A	230V	3V @ 800mA, 8A	5µA (ICBO)	80 @ 1A, 5V	150W	30MHz	150°C (TJ)	Through Hole	TO-3PL	TO-3P(L)
2SC5585TL	Rohm Semiconductor	TRANS NPN 12V 0.5A SOT-416 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 150mW Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	패키지: SC-75, SOT-416	재고1,411,800	500mA	12V	250mV @ 10mA, 200mA	100nA (ICBO)	270 @ 10mA, 2V	150mW	320MHz	150°C (TJ)	Surface Mount	SC-75, SOT-416	EMT3
JANTX2N3867P	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	3 A	40 V	1.5V @ 250mA, 2.5A	1µA	50 @ 500mA, 1V	1 W	-	-55°C ~ 200°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
JANS2N5237	Microchip Technology	TRANS NPN 120V 10A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	10 A	120 V	2.5V @ 1A, 10A	10µA	40 @ 5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2SC2859-GR-TP	Micro Commercial Co	TRANS NPN 30V 0.5A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Power - Max: 150 mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	500 mA	30 V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 100mA, 1V	150 mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2N3019A	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5601	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 20 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	패키지: -	Request a Quote	2 A	80 V	850mV @ 200µA, 1mA	-	-	20 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
2N5618	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 58 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	패키지: -	Request a Quote	5 A	80 V	-	-	-	58 W	-	-	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
JANTXV2N4033UA-TR	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	패키지: -	Request a Quote	1 A	80 V	1V @ 100mA, 1A	25nA	100 @ 100mA, 5V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
S9013-I-AP	Micro Commercial Co	TRANS NPN 25V 0.5A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 50mA, 1V Power - Max: 625 mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	패키지: -	Request a Quote	500 mA	25 V	600mV @ 50mA, 500mA	100nA	190 @ 50mA, 1V	625 mW	150MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
JANSM2N3636UB-TR	Microchip Technology	TRANS PNP 175V 1A UB Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 175 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1.5 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	1 A	175 V	600mV @ 5mA, 50mA	10µA	50 @ 50mA, 10V	1.5 W	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB

BCW60E6422HTMA1

Infineon Technologies

TRANSISTOR AF SOT23

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,088

-

2SC3669-Y(T2OMI,FM

Toshiba Semiconductor and Storage

TRANS NPN 2A 80V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

패키지: SC-71

재고2,256

2A

80V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC6054G0L

Panasonic Electronic Components

TRANS NPN 50V 0.1A SSMINI-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Power - Max: 125mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3

패키지: SC-89, SOT-490

재고2,768

100mA

50V

300mV @ 10mA, 100mA

100µA

160 @ 2mA, 10V

125mW

100MHz

125°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F3

MPSA63_D27Z

Fairchild/ON Semiconductor

TRANS PNP DARL 30V 1.2A TO-92

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,040

1.2A

30V

1.5V @ 100µA, 100mA

100nA (ICBO)

10000 @ 100mA, 5V

625mW

125MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSC2859OMTF

Fairchild/ON Semiconductor

TRANS NPN 30V 0.5A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,544

500mA

30V

250mV @ 10mA, 100mA

100nA

70 @ 100mA, 1V

150mW

300MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

KSA1175RTA

Fairchild/ON Semiconductor

TRANS PNP 50V 0.15A TO-92S

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Power - Max: 250mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S

패키지: TO-226-3, TO-92-3 Short Body (Formed Leads)

재고3,552

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

40 @ 1mA, 6V

250mW

180MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body (Formed Leads)

TO-92S

BC556CBU

Fairchild/ON Semiconductor

TRANS PNP 65V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고6,400

100mA

65V

650mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

500mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BC309BTA

Fairchild/ON Semiconductor

TRANS PNP 25V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,016

100mA

25V

500mV @ 5mA, 100mA

15nA

180 @ 2mA, 5V

500mW

130MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N5089TF

Fairchild/ON Semiconductor

TRANS NPN 25V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,312

100mA

25V

500mV @ 1mA, 10mA

50nA (ICBO)

400 @ 100µA, 5V

625mW

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N3905TF

Fairchild/ON Semiconductor

TRANS PNP 40V 0.2A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,816

200mA

40V

400mV @ 5mA, 50mA

-

50 @ 10mA, 1V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SB1236ATV2P

Rohm Semiconductor

TRANS PNP 160V 1.5A ATV

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ATV
Supplier Device Package: ATV

패키지: ATV

재고6,400

1.5A

160V

2V @ 100mA, 1A

1µA (ICBO)

82 @ 100mA, 5V

1W

50MHz

150°C (TJ)

Through Hole

ATV

MPSW05

ON Semiconductor

TRANS NPN 60V 0.5A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 Long Body

재고5,744

500mA

60V

400mV @ 10mA, 250mA

500nA

60 @ 250mA, 1V

1W

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92

MMBT4401T-7

Diodes Incorporated

TRANS NPN 40V 0.6A SOT-523

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 150mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고14,808

600mA

40V

750mV @ 50mA, 500mA

-

100 @ 150mA, 1V

150mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-523

HD1750FX

STMicroelectronics

TRANS NPN 800V 24A ISOWATT218

Transistor Type: NPN
Current - Collector (Ic) (Max): 24A
Voltage - Collector Emitter Breakdown (Max): 800V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6.5 @ 12A, 5V
Power - Max: 75W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOWATT218FX
Supplier Device Package: ISOWATT-218FX

패키지: ISOWATT218FX

재고82,992

24A

800V

3V @ 3A, 12A

200µA

6.5 @ 12A, 5V

75W

-

150°C (TJ)

Through Hole

ISOWATT218FX

ISOWATT-218FX

2SC4518A

Sanken

TRANS NPN 550V 5A TO220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 550V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 360mA, 1.8A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1.8A, 4V
Power - Max: 35W
Frequency - Transition: 6MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

재고14,988

5A

550V

500mV @ 360mA, 1.8A

100µA (ICBO)

10 @ 1.8A, 4V

35W

6MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

MMST2907A-7

Diodes Incorporated

TRANS PNP 60V 0.6A SC70-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고6,752

600mA

60V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

200mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BD437TG

ON Semiconductor

TRANS NPN 45V 4A TO-225AA

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 36W
Frequency - Transition: 3MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA

패키지: TO-225AA, TO-126-3

재고3,600

4A

45V

800mV @ 300mA, 3A

100µA (ICBO)

85 @ 500mA, 1V

36W

3MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-225AA

PBSS4230QAZ

Nexperia USA Inc.

TRANS NPN 30V 2A DFN1010D-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Power - Max: 325mW
Frequency - Transition: 190MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3

패키지: 3-XDFN Exposed Pad

재고5,184

2A

30V

190mV @ 50mA, 1A

100nA (ICBO)

100 @ 2A, 2V

325mW

190MHz

150°C (TJ)

Surface Mount

3-XDFN Exposed Pad

DFN1010D-3

PBHV9115T,215

Nexperia USA Inc.

TRANS PNP 150V 1A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V
Power - Max: 300mW
Frequency - Transition: 115MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고6,320

1A

150V

300mV @ 100mA, 500mA

100nA

100 @ 100mA, 10V

300mW

115MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

2SC5200-O(Q)

Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PL

Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 150W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)

패키지: TO-3PL

재고304,956

15A

230V

3V @ 800mA, 8A

5µA (ICBO)

80 @ 1A, 5V

150W

30MHz

150°C (TJ)

Through Hole

TO-3PL

TO-3P(L)

2SC5585TL

Rohm Semiconductor

TRANS NPN 12V 0.5A SOT-416

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Power - Max: 150mW
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

패키지: SC-75, SOT-416

재고1,411,800

500mA

12V

250mV @ 10mA, 200mA

100nA (ICBO)

270 @ 10mA, 2V

150mW

320MHz

150°C (TJ)

Surface Mount

SC-75, SOT-416

EMT3

JANTX2N3867P

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

Request a Quote

3 A

40 V

1.5V @ 250mA, 2.5A

1µA

50 @ 500mA, 1V

1 W

-

-55°C ~ 200°C

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

JANS2N5237

Microchip Technology

TRANS NPN 120V 10A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

Request a Quote

10 A

120 V

2.5V @ 1A, 10A

10µA

40 @ 5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2SC2859-GR-TP

Micro Commercial Co

TRANS NPN 30V 0.5A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Power - Max: 150 mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

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500 mA

30 V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 100mA, 1V

150 mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2N3019A

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

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1 A

80 V

500mV @ 50mA, 500mA

10nA

100 @ 150mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2N5601

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 20 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

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2 A

80 V

850mV @ 200µA, 1mA

-

20 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

2N5618

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 58 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

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5 A

80 V

-

58 W

-

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

JANTXV2N4033UA-TR

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

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1 A

80 V

1V @ 100mA, 1A

25nA

100 @ 100mA, 5V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

S9013-I-AP

Micro Commercial Co

TRANS NPN 25V 0.5A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 50mA, 1V
Power - Max: 625 mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

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500 mA

25 V

600mV @ 50mA, 500mA

100nA

190 @ 50mA, 1V

625 mW

150MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

JANSM2N3636UB-TR

Microchip Technology

TRANS PNP 175V 1A UB

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Power - Max: 1.5 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

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1 A

175 V

600mV @ 5mA, 50mA

10µA

50 @ 50mA, 10V

1.5 W

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB