페이지 7 - Cree/Wolfspeed 제품 | Heisener Electronics
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Cree/Wolfspeed 제품

기록 243
페이지  7/9
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C3M0120100K
Cree/Wolfspeed

1000V, 120 MOHM, G3 SIC MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
패키지: TO-247-4
재고11,004
C3M0065090J
Cree/Wolfspeed

MOSFET N-CH 900V 35A D2PAK-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.1V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
  • Vgs (Max): +19V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 113W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
재고62,232
C3M0065090D
Cree/Wolfspeed

MOSFET N-CH 900V 36A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.1V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
  • Vgs (Max): +18V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고30,360
CGHV1J006D
Cree/Wolfspeed

RF MOSFET HEMT 40V DIE

  • Transistor Type: HEMT
  • Frequency: 18GHz
  • Gain: 17dB
  • Voltage - Test: 40V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 6W
  • Voltage - Rated: 100V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,672
CGHV96100F2
Cree/Wolfspeed

FET RF 100V 9.6GHZ 440210

  • Transistor Type: HEMT
  • Frequency: 7.9GHz ~ 9.6GHz
  • Gain: 10.2dB
  • Voltage - Test: 40V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 131W
  • Voltage - Rated: 100V
  • Package / Case: 440210
  • Supplier Device Package: 440210
패키지: 440210
재고5,312
CGHV96050F1
Cree/Wolfspeed

FET RF 100V 9.6GHZ 440210

  • Transistor Type: HEMT
  • Frequency: 7.9GHz ~ 9.6GHz
  • Gain: 17dB
  • Voltage - Test: 40V
  • Current Rating: 13A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 32W
  • Voltage - Rated: 100V
  • Package / Case: 440210
  • Supplier Device Package: 440210
패키지: 440210
재고7,104
CGHV35400F
Cree/Wolfspeed

FET RF 125V 3.5GHZ 440210

  • Transistor Type: HEMT
  • Frequency: 2.9GHz ~ 3.5GHz
  • Gain: 11dB
  • Voltage - Test: 45V
  • Current Rating: 24A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 455W
  • Voltage - Rated: 125V
  • Package / Case: 440210
  • Supplier Device Package: 440210
패키지: 440210
재고7,520
CGHV1J070D-GP4
Cree/Wolfspeed

RF MOSFET HEMT 40V DIE

  • Transistor Type: HEMT
  • Frequency: 18GHz
  • Gain: 17dB
  • Voltage - Test: 40V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 360mA
  • Power - Output: 70W
  • Voltage - Rated: 100V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고8,340
CGH40010F
Cree/Wolfspeed

FET RF 84V 6GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: 3.5A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 12.5W
  • Voltage - Rated: 84V
  • Package / Case: 440166
  • Supplier Device Package: 440166
패키지: 440166
재고15,240
CGH40006P
Cree/Wolfspeed

FET RF 84V 6GHZ 440109

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: 3.5A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 8W
  • Voltage - Rated: 84V
  • Package / Case: 440109
  • Supplier Device Package: 440109
패키지: 440109
재고9,324
CCS020M12CM2
Cree/Wolfspeed

MOSFET 6N-CH 1200V 29.5A MODULE

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 29.5A
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
  • Power - Max: 167W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고2,096
CAS325M12HM2
Cree/Wolfspeed

MOSFET 2N-CH 1200V 444A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 400A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 105mA
  • Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3000W
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,992
CAS300M12BM2
Cree/Wolfspeed

MOSFET 2N-CH 1200V 404A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 404A
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 300A, 20V
  • Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 600V
  • Power - Max: 1660W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module, Screw Terminals
  • Supplier Device Package: Module
패키지: Module, Screw Terminals
재고5,248
C2D05120E-TR
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 17.5A TO252

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Capacitance @ Vr, F: 455pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,328
hot C3D06060G-TR
Cree/Wolfspeed

DIODE SCHOTTKY 600V 6A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 295pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고63,840
C3D06060F
Cree/Wolfspeed

DIODE SCHOTTKY 600V 6A TO220-F2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 294pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220-F2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2 Full Pack
재고6,512
C3D04060F
Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-F2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 251pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220-F2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2 Full Pack, Isolated Tab
재고28,830
C3D10065E
Cree/Wolfspeed

DIODE SCHOTTKY 650V 32A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 32A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 650V
  • Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고17,982
C3D10060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 480pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고13,086
CSD01060E
Cree/Wolfspeed

DIODE SCHOTTKY 600V 1A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 80pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고109,674
C4D10120D
Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 9A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 150µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고3,584
C3D20065D
Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 60µA @ 650V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고7,216
C3D30065D
Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 39A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 95µA @ 650V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고9,240
CMPA601C025F-TB
Cree/Wolfspeed

EVAL BOARD FOR CMPA601C025F

  • Type: Amplifier
  • Frequency: 6GHz ~ 12GHz
  • For Use With/Related Products: CMPA601C025F
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고3,400
CGHV1F025S-AMP1
Cree/Wolfspeed

DEMO HEMT TRANS AMP1 CGHV1F025S

  • Type: HEMT
  • Frequency: 0Hz ~ 15GHz
  • For Use With/Related Products: CGHV1F025
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고7,452
CGHV1F006S-AMP1
Cree/Wolfspeed

DEMO HEMT TRANS AMP1 CGHV1F006S

  • Type: HEMT
  • Frequency: 0Hz ~ 18GHz
  • For Use With/Related Products: CGHV1F006
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고4,518
CGHV27200-TB
Cree/Wolfspeed

EVAL BOARD FOR CGHV27200

  • Type: HEMT
  • Frequency: 2.5GHz ~ 2.7GHz
  • For Use With/Related Products: CGHV27200
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고6,300
CGH40045F-TB
Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40045

  • Type: HEMT
  • Frequency: 0Hz ~ 4GHz
  • For Use With/Related Products: CGH40045F
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고8,136
CGHV22200-TB
Cree/Wolfspeed

EVAL BOARD FOR CGHV22200

  • Type: HEMT
  • Frequency: 1.8GHz ~ 2.2GHz
  • For Use With/Related Products: CGHV22200
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고4,608
CGHV40100F-TB
Cree/Wolfspeed

TEST FIXTURE FOR CGHV40100F

  • Type: FET
  • Frequency: 500MHz ~ 2.5GHz
  • For Use With/Related Products: CGHV40100
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고4,158