페이지 8 - 주요 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
FDS4435BZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 8.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1845pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,980,904
ZXMN3A01FTA	Diodes Incorporated	MOSFET N-CH 30V 1.8A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고1,720,392
PMV65XP,215	Nexperia USA Inc.	MOSFET P-CH 20V 2.8A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 744pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 74 mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고223,128
FDV305N	Fairchild/ON Semiconductor	MOSFET N-CH 20V 0.9A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 109pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 220 mOhm @ 900mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고503,136
NDS331N	Fairchild/ON Semiconductor	MOSFET N-CH 20V 1.3A SSOT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 162pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고1,566,768
SSM3J328R,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 6A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	패키지: SOT-23-3 Flat Leads	재고40,200
AO3407A	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 4.3A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고1,652,040
DMN2300UFB4-7B	Diodes Incorporated	MOSFET N-CH 20V 1.3A 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 175 mOhm @ 300mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN1006-3 Package / Case: 3-XFDFN	패키지: 3-XFDFN	재고1,373,580
BSS138-7-F	Diodes Incorporated	MOSFET N-CH 50V 200MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고1,221,240
FDV303N	Fairchild/ON Semiconductor	MOSFET N-CH 25V 680MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,517,196
BSS123LT1G	ON Semiconductor	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고1,098,564
BSS138LT1G	ON Semiconductor	MOSFET N-CH 50V 200MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,160,040
BSS84-7-F	Diodes Incorporated	MOSFET P-CH 50V 130MA SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고5,170,908
FDV301N	Fairchild/ON Semiconductor	MOSFET N-CH 25V 220MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.06V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,609,752
2N7002-7-F	Diodes Incorporated	MOSFET N-CH 60V 115MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고127,124,664
2N7002LT1G	ON Semiconductor	MOSFET N-CH 60V 0.115A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고11,691,168
ARF444	Microsemi Corporation	PWR MOSFET RF N-CH 900V TO-247AD Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,264
ARF445	Microsemi Corporation	PWR MOSFET RF N-CH 900V TO-247AD Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,768
VMMK-1218-TR1G	Broadcom Limited	FET RF 5V 10GHZ 0402 Transistor Type: E-pHEMT Frequency: 10GHz Gain: 9dB Voltage - Test: 3V Current Rating: 100mA Noise Figure: 0.81dB Current - Test: 20mA Power - Output: 12dBm Voltage - Rated: 5V Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402	패키지: 0402 (1005 Metric)	재고5,280
2N5485	Fairchild/ON Semiconductor	JFET N-CH 25V 10MA TO92 Transistor Type: N-Channel JFET Frequency: 400MHz Gain: - Voltage - Test: 15V Current Rating: 10mA Noise Figure: 4dB Current - Test: - Power - Output: - Voltage - Rated: 25V Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고183,996
NE3509M04-A	CEL	FET RF 4V 2GHZ 4-SMINI Transistor Type: HFET Frequency: 2GHz Gain: 17.5dB Voltage - Test: 2V Current Rating: 60mA Noise Figure: 0.4dB Current - Test: 10mA Power - Output: 11dBm Voltage - Rated: 4V Package / Case: SOT-343F Supplier Device Package: M04	패키지: SOT-343F	재고6,816
MPF102	Fairchild/ON Semiconductor	JFET N-CH 25V 20MA TO92 Transistor Type: N-Channel JFET Frequency: - Gain: - Voltage - Test: - Current Rating: 20mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 25V Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,752
VRF150MP	Microsemi Corporation	RF MOSFET N-CHANNEL 50V M174 Transistor Type: N-Channel Frequency: 150MHz Gain: 11dB Voltage - Test: 50V Current Rating: 1mA Noise Figure: - Current - Test: 250mA Power - Output: 150W Voltage - Rated: 170V Package / Case: M174 Supplier Device Package: M174	패키지: M174	재고3,280
MRF151G	M/A-Com Technology Solutions	FET RF 2CH 125V 175MHZ 375-04 Transistor Type: 2 N-Channel (Dual) Common Source Frequency: 175MHz Gain: 16dB Voltage - Test: 50V Current Rating: 40A Noise Figure: - Current - Test: 500mA Power - Output: 300W Voltage - Rated: 125V Package / Case: 375-04 Supplier Device Package: 375-04, Style 2	패키지: 375-04	재고2,000
VRF150	Microsemi Corporation	MOSFET RF PWR N-CH 50V 150W M174 Transistor Type: N-Channel Frequency: 150MHz Gain: 11dB Voltage - Test: 50V Current Rating: 1mA Noise Figure: - Current - Test: 250mA Power - Output: 150W Voltage - Rated: 170V Package / Case: M174 Supplier Device Package: M174	패키지: M174	재고5,520
NPT1012B	M/A-Com Technology Solutions	HEMT N-CH 28V 25W DC-4000MHZ Transistor Type: HEMT Frequency: 0Hz ~ 4GHz Gain: 13dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 225mA Power - Output: - Voltage - Rated: 100V Package / Case: - Supplier Device Package: -	패키지: -	재고4,496
PD55015-E	STMicroelectronics	FET RF 40V 500MHZ PWRSO-10 Transistor Type: LDMOS Frequency: 500MHz Gain: 14dB Voltage - Test: 12.5V Current Rating: 5A Noise Figure: - Current - Test: 150mA Power - Output: 15W Voltage - Rated: 40V Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Supplier Device Package: PowerSO-10RF (Formed Lead)	패키지: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	재고7,152
ATF-54143-TR1G	Broadcom Limited	FET RF 5V 2GHZ SOT-343 Transistor Type: pHEMT FET Frequency: 2GHz Gain: 16.6dB Voltage - Test: 3V Current Rating: 120mA Noise Figure: 0.5dB Current - Test: 60mA Power - Output: 20.4dBm Voltage - Rated: 5V Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고1,561,968

FDS4435BZ

Fairchild/ON Semiconductor

MOSFET P-CH 30V 8.8A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1845pF @ 15V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,980,904

ZXMN3A01FTA

Diodes Incorporated

MOSFET N-CH 30V 1.8A SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고1,720,392

PMV65XP,215

Nexperia USA Inc.

MOSFET P-CH 20V 2.8A SOT-23

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 744pF @ 20V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 480mW (Ta)
Rds On (Max) @ Id, Vgs: 74 mOhm @ 2.8A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB (SOT23)
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고223,128

FDV305N

Fairchild/ON Semiconductor

MOSFET N-CH 20V 0.9A SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 109pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 900mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고503,136

NDS331N

Fairchild/ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 162pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SuperSOT-3
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고1,566,768

SSM3J328R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

패키지: SOT-23-3 Flat Leads

재고40,200

AO3407A

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 4.3A SOT23

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3L
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고1,652,040

DMN2300UFB4-7B

Diodes Incorporated

MOSFET N-CH 20V 1.3A 3DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 175 mOhm @ 300mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN1006-3
Package / Case: 3-XFDFN

패키지: 3-XFDFN

재고1,373,580

BSS138-7-F

Diodes Incorporated

MOSFET N-CH 50V 200MA SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고1,221,240

FDV303N

Fairchild/ON Semiconductor

MOSFET N-CH 25V 680MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,517,196

BSS123LT1G

ON Semiconductor

MOSFET N-CH 100V 170MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고1,098,564

BSS138LT1G

ON Semiconductor

MOSFET N-CH 50V 200MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,160,040

BSS84-7-F

Diodes Incorporated

MOSFET P-CH 50V 130MA SOT23-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고5,170,908

FDV301N

Fairchild/ON Semiconductor

MOSFET N-CH 25V 220MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs(th) (Max) @ Id: 1.06V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,609,752

2N7002-7-F

Diodes Incorporated

MOSFET N-CH 60V 115MA SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고127,124,664

2N7002LT1G

ON Semiconductor

MOSFET N-CH 60V 0.115A SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고11,691,168

ARF444

Microsemi Corporation

PWR MOSFET RF N-CH 900V TO-247AD

Transistor Type: -
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: -
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,264

ARF445

Microsemi Corporation

PWR MOSFET RF N-CH 900V TO-247AD

Transistor Type: -
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: -
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,768

VMMK-1218-TR1G

Broadcom Limited

FET RF 5V 10GHZ 0402

Transistor Type: E-pHEMT
Frequency: 10GHz
Gain: 9dB
Voltage - Test: 3V
Current Rating: 100mA
Noise Figure: 0.81dB
Current - Test: 20mA
Power - Output: 12dBm
Voltage - Rated: 5V
Package / Case: 0402 (1005 Metric)
Supplier Device Package: 0402

패키지: 0402 (1005 Metric)

재고5,280

2N5485

Fairchild/ON Semiconductor

JFET N-CH 25V 10MA TO92

Transistor Type: N-Channel JFET
Frequency: 400MHz
Gain: -
Voltage - Test: 15V
Current Rating: 10mA
Noise Figure: 4dB
Current - Test: -
Power - Output: -
Voltage - Rated: 25V
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고183,996

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

Transistor Type: HFET
Frequency: 2GHz
Gain: 17.5dB
Voltage - Test: 2V
Current Rating: 60mA
Noise Figure: 0.4dB
Current - Test: 10mA
Power - Output: 11dBm
Voltage - Rated: 4V
Package / Case: SOT-343F
Supplier Device Package: M04

패키지: SOT-343F

재고6,816

MPF102

Fairchild/ON Semiconductor

JFET N-CH 25V 20MA TO92

Transistor Type: N-Channel JFET
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: 20mA
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: 25V
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,752

VRF150MP

Microsemi Corporation

RF MOSFET N-CHANNEL 50V M174

Transistor Type: N-Channel
Frequency: 150MHz
Gain: 11dB
Voltage - Test: 50V
Current Rating: 1mA
Noise Figure: -
Current - Test: 250mA
Power - Output: 150W
Voltage - Rated: 170V
Package / Case: M174
Supplier Device Package: M174

패키지: M174

재고3,280

MRF151G

M/A-Com Technology Solutions

FET RF 2CH 125V 175MHZ 375-04

Transistor Type: 2 N-Channel (Dual) Common Source
Frequency: 175MHz
Gain: 16dB
Voltage - Test: 50V
Current Rating: 40A
Noise Figure: -
Current - Test: 500mA
Power - Output: 300W
Voltage - Rated: 125V
Package / Case: 375-04
Supplier Device Package: 375-04, Style 2

패키지: 375-04

재고2,000

VRF150

Microsemi Corporation

MOSFET RF PWR N-CH 50V 150W M174

Transistor Type: N-Channel
Frequency: 150MHz
Gain: 11dB
Voltage - Test: 50V
Current Rating: 1mA
Noise Figure: -
Current - Test: 250mA
Power - Output: 150W
Voltage - Rated: 170V
Package / Case: M174
Supplier Device Package: M174

패키지: M174

재고5,520

NPT1012B

M/A-Com Technology Solutions

HEMT N-CH 28V 25W DC-4000MHZ

Transistor Type: HEMT
Frequency: 0Hz ~ 4GHz
Gain: 13dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 225mA
Power - Output: -
Voltage - Rated: 100V
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,496

PD55015-E

STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

Transistor Type: LDMOS
Frequency: 500MHz
Gain: 14dB
Voltage - Test: 12.5V
Current Rating: 5A
Noise Figure: -
Current - Test: 150mA
Power - Output: 15W
Voltage - Rated: 40V
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package: PowerSO-10RF (Formed Lead)

패키지: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

재고7,152

ATF-54143-TR1G

Broadcom Limited

FET RF 5V 2GHZ SOT-343

Transistor Type: pHEMT FET
Frequency: 2GHz
Gain: 16.6dB
Voltage - Test: 3V
Current Rating: 120mA
Noise Figure: 0.5dB
Current - Test: 60mA
Power - Output: 20.4dBm
Voltage - Rated: 5V
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고1,561,968