페이지 4 - 주요 제품 | Heisener Electronics
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HM0068ANL
Pulse Electronics Network

MDL SIN 100D 1:1 SMT

  • Transformer Type: -
  • Inductance: -
  • E.T.: -
  • Turns Ratio - Primary:Secondary: -
  • Mounting Type: Surface Mount
  • Size / Dimension: 0.500" L x 0.347" W (12.70mm x 8.81mm)
  • Height - Seated (Max): 0.082" (2.08mm)
  • Operating Temperature: -40°C ~ 105°C
패키지: -
재고2,124
hot TX1475NL
Pulse Electronics Network

XFRMR OCTAL 1:2/1:1 1.2MH SMD

  • Transformer Type: T1/E1 (Octal)
  • Inductance: 1.2mH
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1:2, 1:1
  • Mounting Type: Surface Mount
  • Size / Dimension: 1.000" L x 0.310" W (25.40mm x 7.87mm)
  • Height - Seated (Max): 0.295" (7.49mm)
  • Operating Temperature: -40°C ~ 85°C
패키지: -
재고13,104
hot PE-64934NL
Pulse Electronics Network

XFRMR T1/CEPT/ISDN-PRI 1:1

  • Transformer Type: T1/E1 (Single)
  • Inductance: 1.2mH
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1CT:1
  • Mounting Type: Through Hole
  • Size / Dimension: 0.500" L x 0.350" W (12.70mm x 8.89mm)
  • Height - Seated (Max): 0.250" (6.35mm)
  • Operating Temperature: 0°C ~ 70°C
패키지: -
재고12,372
hot S558-5999-Q3-F
Bel Fuse Inc.

MODULE XFRMR LAN GIGABIT 48P SMD

  • Transformer Type: LAN
  • Inductance: 350µH
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1CT:1CT Transmitter, 1CT:1CT Receiver
  • Mounting Type: Surface Mount
  • Size / Dimension: 1.095" L x 0.480" W (27.81mm x 12.19mm)
  • Height - Seated (Max): 0.295" (7.49mm)
  • Operating Temperature: 0°C ~ 70°C
패키지: -
재고6,804
hot HX5401NL
Pulse Electronics Network

XFRMR MODL 4PORT POE GIGABIT

  • Transformer Type: Isolation and Data Interface (Encapsulated)
  • Inductance: 350µH
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1CT:1CT Transmitter, 1CT:1CT Receiver
  • Mounting Type: Surface Mount
  • Size / Dimension: 1.120" L x 0.680" W (28.45mm x 17.27mm)
  • Height - Seated (Max): 0.438" (11.12mm)
  • Operating Temperature: -40°C ~ 85°C
패키지: -
재고6,840
hot HX5120NL
Pulse Electronics Network

MODULE XFORMR GIGABIT EXT SMD

  • Transformer Type: -
  • Inductance: -
  • E.T.: -
  • Turns Ratio - Primary:Secondary: -
  • Mounting Type: -
  • Size / Dimension: 0.650" L x 0.360" W (16.51mm x 9.14mm)
  • Height - Seated (Max): 0.082" (2.08mm)
  • Operating Temperature: -40°C ~ 85°C
패키지: -
재고6,192
hot HX5008NL
Pulse Electronics Network

MODULE SINGLE GIGABIT LAN 24SOIC

  • Transformer Type: Isolation and Data Interface (Encapsulated)
  • Inductance: -
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1:1
  • Mounting Type: Surface Mount
  • Size / Dimension: 0.518" L x 0.595" W (13.16mm x 15.11mm)
  • Height - Seated (Max): 0.251" (6.37mm)
  • Operating Temperature: -40°C ~ 85°C
패키지: -
재고32,640
hot H5120NL
Pulse Electronics Network

MODULE XFORMR SNGL GIGABIT SMD

  • Transformer Type: -
  • Inductance: -
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1CT:1CT
  • Mounting Type: Surface Mount
  • Size / Dimension: 0.650" L x 0.365" W (16.51mm x 9.27mm)
  • Height - Seated (Max): 0.082" (2.08mm)
  • Operating Temperature: 0°C ~ 70°C
패키지: -
재고14,664
hot HX5008NLT
Pulse Electronics Network

TRANSFORMER MODULE GIGABIT 1PORT

  • Transformer Type: Isolation and Data Interface (Encapsulated)
  • Inductance: -
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1:1
  • Mounting Type: Surface Mount
  • Size / Dimension: 0.518" L x 0.595" W (13.16mm x 15.11mm)
  • Height - Seated (Max): 0.251" (6.37mm)
  • Operating Temperature: -40°C ~ 85°C
패키지: -
재고6,084
hot HX1188NL
Pulse Electronics Network

MODULE XFRMR SGL ETHR LAN 16SOIC

  • Transformer Type: Isolation and Data Interface (Encapsulated)
  • Inductance: -
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1:1 Transmitter, 1:1 Receiver
  • Mounting Type: Surface Mount
  • Size / Dimension: 0.500" L x 0.280" W (12.70mm x 7.11mm)
  • Height - Seated (Max): 0.245" (6.22mm)
  • Operating Temperature: -40°C ~ 85°C
패키지: -
재고33,612
749022011
Wurth Electronics Inc.

TRANSFORMER LAN 10/100/1000 POE

  • Transformer Type: LAN 10/100/1000 Base-T, POE
  • Inductance: 350µH
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1:1
  • Mounting Type: Surface Mount
  • Size / Dimension: 0.720" L x 0.480" W (18.30mm x 12.20mm)
  • Height - Seated (Max): 0.250" (6.35mm)
  • Operating Temperature: -40°C ~ 85°C
패키지: -
재고29,820
hot HX2019NLT
Pulse Electronics Network

XFRMR MAGNT MOD 1PORT POE 10/100

  • Transformer Type: Isolation and Data Interface (Encapsulated)
  • Inductance: -
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1:1 Transmitter, 1:1 Receiver
  • Mounting Type: Surface Mount
  • Size / Dimension: 0.500" L x 0.280" W (12.70mm x 7.11mm)
  • Height - Seated (Max): 0.245" (6.22mm)
  • Operating Temperature: -40°C ~ 85°C
패키지: -
재고14,136
hot HX1188NLT
Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

  • Transformer Type: Isolation and Data Interface (Encapsulated)
  • Inductance: -
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1:1 Transmitter, 1:1 Receiver
  • Mounting Type: Surface Mount
  • Size / Dimension: 0.500" L x 0.280" W (12.70mm x 7.11mm)
  • Height - Seated (Max): 0.245" (6.22mm)
  • Operating Temperature: -40°C ~ 85°C
패키지: -
재고14,400
hot HX1188FNLT
Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

  • Transformer Type: Isolation and Data Interface (Encapsulated)
  • Inductance: -
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1:1 Transmitter, 1:1 Receiver
  • Mounting Type: Surface Mount
  • Size / Dimension: 0.500" L x 0.358" W (12.70mm x 9.09mm)
  • Height - Seated (Max): 0.241" (6.12mm)
  • Operating Temperature: -40°C ~ 85°C
패키지: -
재고16,332
hot H1102NLT
Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

  • Transformer Type: Isolation and Data Interface (Encapsulated)
  • Inductance: -
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1:1 Transmitter, 1:1 Receiver
  • Mounting Type: Surface Mount
  • Size / Dimension: 0.500" L x 0.280" W (12.70mm x 7.11mm)
  • Height - Seated (Max): 0.245" (6.22mm)
  • Operating Temperature: 0°C ~ 70°C
패키지: -
재고456,492
ALT4532M-171-T001
TDK Corporation

XFRMR LAN 1CT:1CT 170UH

  • Transformer Type: LAN
  • Inductance: 170µH
  • E.T.: -
  • Turns Ratio - Primary:Secondary: 1CT:1CT
  • Mounting Type: Surface Mount
  • Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
  • Height - Seated (Max): 0.087" (2.20mm)
  • Operating Temperature: -40°C ~ 85°C
패키지: -
재고33,168
BCV62C,215
Nexperia USA Inc.

TRANS PNP 30V 100MA DUAL SOT143B

  • Transistor Type: 2 PNP (Dual) Current Mirror
  • Applications: Current Mirror
  • Voltage - Rated: 30V
  • Current Rating: 100mA
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고25,512
hot J201
Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고162,000
hot J111
Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고108,480
IXGH10N300
IXYS

IGBT 3000V 18A 100W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
  • Power - Max: 100W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고7,072
IXGX120N60B
IXYS

IGBT 600V 200A 660W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
  • Power - Max: 660W
  • Switching Energy: 2.4mJ (on), 5.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 350nC
  • Td (on/off) @ 25°C: 60ns/200ns
  • Test Condition: 480V, 100A, 2.4 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고4,688
hot IRG4BC20KDSTRRP
Infineon Technologies

IGBT 600V 16A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 32A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 340µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: 54ns/180ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고24,792
IXBT12N300HV
IXYS

IGBT 3000V 30A 160W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: 64ns/180ns
  • Test Condition: 1250V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 1.4µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고2,144
hot FGH40N60SMD
Fairchild/ON Semiconductor

IGBT 600V 80A 349W TO-247-3

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 349W
  • Switching Energy: 870µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 119nC
  • Td (on/off) @ 25°C: 12ns/92ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 36ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고285,000
IRG7PH42UDPBF
Infineon Technologies

IGBT 1200V 85A 320W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 320W
  • Switching Energy: 2.11mJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 157nC
  • Td (on/off) @ 25°C: 25ns/229ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 153ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고6,576
IXGA20N120A3
IXYS

IGBT 1200V 40A 180W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 180W
  • Switching Energy: 2.85mJ (on), 6.47mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 16ns/290ns
  • Test Condition: 960V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,132
FMG2G400US60
Fairchild/ON Semiconductor

IGBT MOLDING 600V 400A 7PM-IA

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 400A
  • Power - Max: 1136W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 400A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 7PM-IA
  • Supplier Device Package: 7PM-IA
패키지: 7PM-IA
재고7,712
hot FF1200R12KE3
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 1200A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,672
FP25R12KE3BOSA1
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1200V 25A

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Power - Max: 155W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 1.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,080
hot IRFR7440PBF
Infineon Technologies

MOSFET N CH 40V 90A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4610pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고390,396