페이지 8 - Cree/Wolfspeed 제품

부품 번호	제조업체	설명	패키지	재고
C3M0120100J	Cree/Wolfspeed	MOSFET N-CH SIC 1KV 22A D2PAK-7 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	재고6,048
C3M0065090J	Cree/Wolfspeed	MOSFET N-CH 900V 35A D2PAK-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	재고62,232
C3M0065090D	Cree/Wolfspeed	MOSFET N-CH 900V 36A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Vgs (Max): +18V, -8V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고30,360
CGH40010P	Cree/Wolfspeed	FET RF 28V 6GHZ 440196 Transistor Type: HEMT Frequency: 0Hz ~ 6GHz Gain: 14.5dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 200mA Power - Output: 12.5W Voltage - Rated: 28V Package / Case: 440196 Supplier Device Package: 440196	패키지: 440196	재고3,936
CGHV1J006D	Cree/Wolfspeed	RF MOSFET HEMT 40V DIE Transistor Type: HEMT Frequency: 18GHz Gain: 17dB Voltage - Test: 40V Current Rating: - Noise Figure: - Current - Test: 30mA Power - Output: 6W Voltage - Rated: 100V Package / Case: Die Supplier Device Package: Die	패키지: Die	재고6,672
CGH60060D-GP4	Cree/Wolfspeed	RF MOSFET HEMT 28V DIE Transistor Type: HEMT Frequency: 6GHz Gain: 13dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 400mA Power - Output: 60W Voltage - Rated: 84V Package / Case: Die Supplier Device Package: Die	패키지: Die	재고6,504
CGHV22200F	Cree/Wolfspeed	FET RF 125V 2.2GHZ 440162 Transistor Type: HEMT Frequency: 1.8GHz ~ 2.2GHz Gain: 18dB Voltage - Test: 50V Current Rating: 12A Noise Figure: - Current - Test: 1A Power - Output: 200W Voltage - Rated: 125V Package / Case: 440162 Supplier Device Package: 440162	패키지: 440162	재고4,480
CGHV14800F	Cree/Wolfspeed	800-W 1200-1400-MHZ GAN HEMT Transistor Type: HEMT Frequency: 1.4GHz Gain: 14.5dB Voltage - Test: 50V Current Rating: 24A Noise Figure: - Current - Test: 800mA Power - Output: 900W Voltage - Rated: 125V Package / Case: 440117 Supplier Device Package: 440117	패키지: 440117	재고5,008
CGHV60040D	Cree/Wolfspeed	RF MOSFET HEMT 50V DIE Transistor Type: HEMT Frequency: 6GHz Gain: 17dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 65mA Power - Output: 40W Voltage - Rated: 150V Package / Case: Die Supplier Device Package: Die	패키지: Die	재고8,208
CGHV35400F	Cree/Wolfspeed	FET RF 125V 3.5GHZ 440210 Transistor Type: HEMT Frequency: 2.9GHz ~ 3.5GHz Gain: 11dB Voltage - Test: 45V Current Rating: 24A Noise Figure: - Current - Test: 500mA Power - Output: 455W Voltage - Rated: 125V Package / Case: 440210 Supplier Device Package: 440210	패키지: 440210	재고7,520
CGH40006P	Cree/Wolfspeed	FET RF 84V 6GHZ 440109 Transistor Type: HEMT Frequency: 0Hz ~ 6GHz Gain: 13dB Voltage - Test: 28V Current Rating: 3.5A Noise Figure: - Current - Test: 100mA Power - Output: 8W Voltage - Rated: 84V Package / Case: 440109 Supplier Device Package: 440109	패키지: 440109	재고9,324
CAS325M12HM2	Cree/Wolfspeed	MOSFET 2N-CH 1200V 444A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 444A (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 400A, 20V Vgs(th) (Max) @ Id: 4V @ 105mA Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3000W Operating Temperature: 175°C (TJ) Mounting Type: - Package / Case: Module Supplier Device Package: Module	패키지: Module	재고6,992
CAS300M12BM2	Cree/Wolfspeed	MOSFET 2N-CH 1200V 404A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 404A Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 300A, 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 600V Power - Max: 1660W Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module, Screw Terminals Supplier Device Package: Module	패키지: Module, Screw Terminals	재고5,248
CSD02060G	Cree/Wolfspeed	DIODE SCHOTTKY 600V 3.5A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,328
C4D10120E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 33A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 33A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: 754pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고6,736
C3D04060E	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고13,428
C3D06065E	Cree/Wolfspeed	DIODE SCHOTTKY 650V 2A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 295pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고8,220
C3D04060F	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO220-F2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2 Full Pack, Isolated Tab	재고28,830
C4D10120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: 754pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고17,028
C3D10060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고13,086
CSD01060E	Cree/Wolfspeed	DIODE SCHOTTKY 600V 1A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 80pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고109,674
C4D10120D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 1200V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 9A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 150µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고3,584
C3D30065D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 650V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io) (per Diode): 39A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 95µA @ 650V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고9,240
CGHV1F025S-AMP1	Cree/Wolfspeed	DEMO HEMT TRANS AMP1 CGHV1F025S Type: HEMT Frequency: 0Hz ~ 15GHz For Use With/Related Products: CGHV1F025 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고7,452
CGH40180PP-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40180 Type: HEMT Frequency: 2.5GHz For Use With/Related Products: CGH40180 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고8,514
CGHV59070F-AMP	Cree/Wolfspeed	EVAL BOARD WITH CGHV59070F Type: HEMT Frequency: 5.2GHz ~ 5.9GHz For Use With/Related Products: CGHV59070F Supplied Contents: Board	패키지: -	재고3,870
CMPA2560025F-TB	Cree/Wolfspeed	BOARD DEMO AMP CKT CMPA2560025F Type: Amplifier Frequency: 2.5GHz ~ 6GHz For Use With/Related Products: CMPA2560025F Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고8,262
CGHV40100F-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV40100F Type: FET Frequency: 500MHz ~ 2.5GHz For Use With/Related Products: CGHV40100 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고4,158

C3M0120100J

Cree/Wolfspeed

MOSFET N-CH SIC 1KV 22A D2PAK-7

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
Vgs (Max): +15V, -4V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

재고6,048

C3M0065090J

Cree/Wolfspeed

MOSFET N-CH 900V 35A D2PAK-7

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
Vgs (Max): +19V, -8V
FET Feature: -
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

재고62,232

C3M0065090D

Cree/Wolfspeed

MOSFET N-CH 900V 36A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
Vgs (Max): +18V, -8V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고30,360

CGH40010P

Cree/Wolfspeed

FET RF 28V 6GHZ 440196

Transistor Type: HEMT
Frequency: 0Hz ~ 6GHz
Gain: 14.5dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 200mA
Power - Output: 12.5W
Voltage - Rated: 28V
Package / Case: 440196
Supplier Device Package: 440196

패키지: 440196

재고3,936

CGHV1J006D

Cree/Wolfspeed

RF MOSFET HEMT 40V DIE

Transistor Type: HEMT
Frequency: 18GHz
Gain: 17dB
Voltage - Test: 40V
Current Rating: -
Noise Figure: -
Current - Test: 30mA
Power - Output: 6W
Voltage - Rated: 100V
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고6,672

CGH60060D-GP4

Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

Transistor Type: HEMT
Frequency: 6GHz
Gain: 13dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 400mA
Power - Output: 60W
Voltage - Rated: 84V
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고6,504

CGHV22200F

Cree/Wolfspeed

FET RF 125V 2.2GHZ 440162

Transistor Type: HEMT
Frequency: 1.8GHz ~ 2.2GHz
Gain: 18dB
Voltage - Test: 50V
Current Rating: 12A
Noise Figure: -
Current - Test: 1A
Power - Output: 200W
Voltage - Rated: 125V
Package / Case: 440162
Supplier Device Package: 440162

패키지: 440162

재고4,480

CGHV14800F

Cree/Wolfspeed

800-W 1200-1400-MHZ GAN HEMT

Transistor Type: HEMT
Frequency: 1.4GHz
Gain: 14.5dB
Voltage - Test: 50V
Current Rating: 24A
Noise Figure: -
Current - Test: 800mA
Power - Output: 900W
Voltage - Rated: 125V
Package / Case: 440117
Supplier Device Package: 440117

패키지: 440117

재고5,008

CGHV60040D

Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

Transistor Type: HEMT
Frequency: 6GHz
Gain: 17dB
Voltage - Test: 50V
Current Rating: -
Noise Figure: -
Current - Test: 65mA
Power - Output: 40W
Voltage - Rated: 150V
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고8,208

CGHV35400F

Cree/Wolfspeed

FET RF 125V 3.5GHZ 440210

Transistor Type: HEMT
Frequency: 2.9GHz ~ 3.5GHz
Gain: 11dB
Voltage - Test: 45V
Current Rating: 24A
Noise Figure: -
Current - Test: 500mA
Power - Output: 455W
Voltage - Rated: 125V
Package / Case: 440210
Supplier Device Package: 440210

패키지: 440210

재고7,520

CGH40006P

Cree/Wolfspeed

FET RF 84V 6GHZ 440109

Transistor Type: HEMT
Frequency: 0Hz ~ 6GHz
Gain: 13dB
Voltage - Test: 28V
Current Rating: 3.5A
Noise Figure: -
Current - Test: 100mA
Power - Output: 8W
Voltage - Rated: 84V
Package / Case: 440109
Supplier Device Package: 440109

패키지: 440109

재고9,324

CAS325M12HM2

Cree/Wolfspeed

MOSFET 2N-CH 1200V 444A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 400A, 20V
Vgs(th) (Max) @ Id: 4V @ 105mA
Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3000W
Operating Temperature: 175°C (TJ)
Mounting Type: -
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고6,992

CAS300M12BM2

Cree/Wolfspeed

MOSFET 2N-CH 1200V 404A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 404A
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 300A, 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 600V
Power - Max: 1660W
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module, Screw Terminals
Supplier Device Package: Module

패키지: Module, Screw Terminals

재고5,248

CSD02060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 3.5A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,328

C4D10120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 33A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 33A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고6,736

C3D04060E

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고13,428

C3D06065E

Cree/Wolfspeed

DIODE SCHOTTKY 650V 2A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 650V
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고8,220

C3D04060F

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-F2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2 Full Pack, Isolated Tab

재고28,830

C4D10120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고17,028

C3D10060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고13,086

CSD01060E

Cree/Wolfspeed

DIODE SCHOTTKY 600V 1A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고109,674

C4D10120D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 9A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 150µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고3,584

C3D30065D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 650V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io) (per Diode): 39A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 95µA @ 650V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고9,240

CGHV1F025S-AMP1

Cree/Wolfspeed

DEMO HEMT TRANS AMP1 CGHV1F025S

Type: HEMT
Frequency: 0Hz ~ 15GHz
For Use With/Related Products: CGHV1F025
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고7,452

CGH40180PP-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40180

Type: HEMT
Frequency: 2.5GHz
For Use With/Related Products: CGH40180
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고8,514

CGHV59070F-AMP

Cree/Wolfspeed

EVAL BOARD WITH CGHV59070F

Type: HEMT
Frequency: 5.2GHz ~ 5.9GHz
For Use With/Related Products: CGHV59070F
Supplied Contents: Board

패키지: -

재고3,870

CMPA2560025F-TB

Cree/Wolfspeed

BOARD DEMO AMP CKT CMPA2560025F

Type: Amplifier
Frequency: 2.5GHz ~ 6GHz
For Use With/Related Products: CMPA2560025F
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고8,262

CGHV40100F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV40100F

Type: FET
Frequency: 500MHz ~ 2.5GHz
For Use With/Related Products: CGHV40100
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고4,158