페이지 6 - Cree/Wolfspeed 제품

부품 번호	제조업체	설명	패키지	재고
CMF20120D	Cree/Wolfspeed	MOSFET N-CH 1200V 42A TO-247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V Vgs (Max): +25V, -5V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고7,632
C2M1000170J-TR	Cree/Wolfspeed	MOSFET N-CH 1700V 5.3A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ) Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	재고7,968
C2M0080120D	Cree/Wolfspeed	MOSFET N-CH 1200V 31.6A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고7,104
C2M1000170D	Cree/Wolfspeed	MOSFET N-CH 1700V 4.9A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 191pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고2,608
C2M0160120D	Cree/Wolfspeed	MOSFET N-CH 1200V 19A TO-247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 800V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 196 mOhm @ 10A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고25,188
C2M1000170J	Cree/Wolfspeed	MOSFET N-CH 1700V 5.3A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ) Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7 (Straight Leads)	패키지: TO-263-7 (Straight Leads)	재고22,206
CRF24060FE	Cree/Wolfspeed	FET RF 120V 1.1GHZ 440193 Transistor Type: Silicon Carbide MESFET Frequency: 1.1GHz Gain: 13dB Voltage - Test: 48V Current Rating: 9A Noise Figure: - Current - Test: 2A Power - Output: 60W Voltage - Rated: 120V Package / Case: 440193 Supplier Device Package: 440193	패키지: 440193	재고3,360
CGHV50200F	Cree/Wolfspeed	200-W 4400-5000-MHZ 50-OHM I Transistor Type: HEMT Frequency: 5GHz Gain: 11.8dB Voltage - Test: 40V Current Rating: 17A Noise Figure: - Current - Test: 1A Power - Output: 200W Voltage - Rated: 125V Package / Case: 440217 Supplier Device Package: 440217	패키지: 440217	재고4,144
CGHV60170D	Cree/Wolfspeed	RF MOSFET HEMT 50V DIE Transistor Type: HEMT Frequency: 6GHz Gain: 17dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 260mA Power - Output: 170W Voltage - Rated: 150V Package / Case: Die Supplier Device Package: Die	패키지: Die	재고5,456
CGHV14500F	Cree/Wolfspeed	FET RF 125V 1.4GHZ 440117 Transistor Type: HEMT Frequency: 1.2GHz ~ 1.4GHz Gain: 17dB Voltage - Test: 50V Current Rating: 36A Noise Figure: - Current - Test: 500mA Power - Output: 500W Voltage - Rated: 125V Package / Case: 440117 Supplier Device Package: 440117	패키지: 440117	재고7,424
CGHV96050F2	Cree/Wolfspeed	FET RF 100V 9.6GHZ 440210 Transistor Type: HEMT Frequency: 7.9GHz ~ 9.6GHz Gain: 10dB Voltage - Test: 40V Current Rating: 6A Noise Figure: - Current - Test: 500mA Power - Output: 70W Voltage - Rated: 100V Package / Case: 440210 Supplier Device Package: 440210	패키지: 440210	재고5,840
CGHV14250F	Cree/Wolfspeed	FET RF 125V 1.4GHZ 440162 Transistor Type: HEMT Frequency: 1.2GHz ~ 1.4GHz Gain: 18dB Voltage - Test: 50V Current Rating: 42mA Noise Figure: - Current - Test: 500mA Power - Output: 330W Voltage - Rated: 125V Package / Case: 440162 Supplier Device Package: 440162	패키지: 440162	재고5,872
CGH40120F	Cree/Wolfspeed	FET RF 84V 4GHZ 440193 Transistor Type: HEMT Frequency: 0Hz ~ 4GHz Gain: 19dB Voltage - Test: 28V Current Rating: 28A Noise Figure: - Current - Test: 1A Power - Output: 120W Voltage - Rated: 84V Package / Case: 440193 Supplier Device Package: 440193	패키지: 440193	재고13,956
CGHV1J025D-GP4	Cree/Wolfspeed	RF MOSFET HEMT 40V DIE Transistor Type: HEMT Frequency: 18GHz Gain: 17dB Voltage - Test: 40V Current Rating: - Noise Figure: - Current - Test: 120mA Power - Output: 25W Voltage - Rated: 100V Package / Case: Die Supplier Device Package: Die	패키지: Die	재고6,216
CAS300M17BM2	Cree/Wolfspeed	MOSFET 2N-CH 1700V 325A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 325A Rds On (Max) @ Id, Vgs: 10 mOhm @ 225A, 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V Power - Max: 1760W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고7,936
C3D03065E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 650V 11.5A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 11.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 155pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,144
C3D02060E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 600V 8A TO252-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 11pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고65,784
C4D05120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 8.2A TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8.2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 150µA @ 1200V Capacitance @ Vr, F: 390pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고6,576
CSD01060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 2.2A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2.2A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 80pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고42,720
C4D30120D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 1200V 21.5A Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 21.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고3,712
C4D15120D	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 24.5A TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 24.5V (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고11,736
CGHV27060MP-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV27060MP Type: HEMT Frequency: 0Hz ~ 2.7GHz For Use With/Related Products: CGHV27060 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고3,078
CGH40035F-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40035 Type: HEMT Frequency: 0Hz ~ 6GHz For Use With/Related Products: CGH40035F Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고6,912
CMPA5585025F-TB	Cree/Wolfspeed	EVAL BOARD FOR CMPA5585025F Type: Amplifier Frequency: 5.5GHz ~ 8.5GHz For Use With/Related Products: CMPA5585025F Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고5,742
CGH55030F-TB	Cree/Wolfspeed	RF EVAL HEMT AMPLIFIER Type: Amplifier Frequency: 4.5GHz ~ 6GHz For Use With/Related Products: CGH55030 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고6,804
CGHV14250F-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV14250 Type: FET Frequency: 1.2GHz ~ 1.4GHz For Use With/Related Products: CGHV14250 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고4,050
CMPA801B025F-TB	Cree/Wolfspeed	IC AMP GAN HEMT MMIC 440208 Frequency: 8.5GHz ~ 11GHz P1dB: - Gain: 15.8dB Noise Figure: - RF Type: - Voltage - Supply: 28V Current - Supply: - Test Frequency: - Package / Case: Module Supplier Device Package: Module	패키지: Module	재고5,166
CMPA801B025F	Cree/Wolfspeed	IC AMP GAN HEMT MMIC 440208 Frequency: 8.5GHz ~ 11GHz P1dB: - Gain: 24dB Noise Figure: - RF Type: - Voltage - Supply: - Current - Supply: - Test Frequency: - Package / Case: 440208 Supplier Device Package: 440208	패키지: 440208	재고7,596

CMF20120D

Cree/Wolfspeed

MOSFET N-CH 1200V 42A TO-247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V
Vgs (Max): +25V, -5V
FET Feature: -
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고7,632

C2M1000170J-TR

Cree/Wolfspeed

MOSFET N-CH 1700V 5.3A TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

재고7,968

C2M0080120D

Cree/Wolfspeed

MOSFET N-CH 1200V 31.6A TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고7,104

C2M1000170D

Cree/Wolfspeed

MOSFET N-CH 1700V 4.9A TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 191pF @ 1000V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고2,608

C2M0160120D

Cree/Wolfspeed

MOSFET N-CH 1200V 19A TO-247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 800V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 196 mOhm @ 10A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고25,188

C2M1000170J

Cree/Wolfspeed

MOSFET N-CH 1700V 5.3A TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7 (Straight Leads)

패키지: TO-263-7 (Straight Leads)

재고22,206

CRF24060FE

Cree/Wolfspeed

FET RF 120V 1.1GHZ 440193

Transistor Type: Silicon Carbide MESFET
Frequency: 1.1GHz
Gain: 13dB
Voltage - Test: 48V
Current Rating: 9A
Noise Figure: -
Current - Test: 2A
Power - Output: 60W
Voltage - Rated: 120V
Package / Case: 440193
Supplier Device Package: 440193

패키지: 440193

재고3,360

CGHV50200F

Cree/Wolfspeed

200-W 4400-5000-MHZ 50-OHM I

Transistor Type: HEMT
Frequency: 5GHz
Gain: 11.8dB
Voltage - Test: 40V
Current Rating: 17A
Noise Figure: -
Current - Test: 1A
Power - Output: 200W
Voltage - Rated: 125V
Package / Case: 440217
Supplier Device Package: 440217

패키지: 440217

재고4,144

CGHV60170D

Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

Transistor Type: HEMT
Frequency: 6GHz
Gain: 17dB
Voltage - Test: 50V
Current Rating: -
Noise Figure: -
Current - Test: 260mA
Power - Output: 170W
Voltage - Rated: 150V
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고5,456

CGHV14500F

Cree/Wolfspeed

FET RF 125V 1.4GHZ 440117

Transistor Type: HEMT
Frequency: 1.2GHz ~ 1.4GHz
Gain: 17dB
Voltage - Test: 50V
Current Rating: 36A
Noise Figure: -
Current - Test: 500mA
Power - Output: 500W
Voltage - Rated: 125V
Package / Case: 440117
Supplier Device Package: 440117

패키지: 440117

재고7,424

CGHV96050F2

Cree/Wolfspeed

FET RF 100V 9.6GHZ 440210

Transistor Type: HEMT
Frequency: 7.9GHz ~ 9.6GHz
Gain: 10dB
Voltage - Test: 40V
Current Rating: 6A
Noise Figure: -
Current - Test: 500mA
Power - Output: 70W
Voltage - Rated: 100V
Package / Case: 440210
Supplier Device Package: 440210

패키지: 440210

재고5,840

CGHV14250F

Cree/Wolfspeed

FET RF 125V 1.4GHZ 440162

Transistor Type: HEMT
Frequency: 1.2GHz ~ 1.4GHz
Gain: 18dB
Voltage - Test: 50V
Current Rating: 42mA
Noise Figure: -
Current - Test: 500mA
Power - Output: 330W
Voltage - Rated: 125V
Package / Case: 440162
Supplier Device Package: 440162

패키지: 440162

재고5,872

CGH40120F

Cree/Wolfspeed

FET RF 84V 4GHZ 440193

Transistor Type: HEMT
Frequency: 0Hz ~ 4GHz
Gain: 19dB
Voltage - Test: 28V
Current Rating: 28A
Noise Figure: -
Current - Test: 1A
Power - Output: 120W
Voltage - Rated: 84V
Package / Case: 440193
Supplier Device Package: 440193

패키지: 440193

재고13,956

CGHV1J025D-GP4

Cree/Wolfspeed

RF MOSFET HEMT 40V DIE

Transistor Type: HEMT
Frequency: 18GHz
Gain: 17dB
Voltage - Test: 40V
Current Rating: -
Noise Figure: -
Current - Test: 120mA
Power - Output: 25W
Voltage - Rated: 100V
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고6,216

CAS300M17BM2

Cree/Wolfspeed

MOSFET 2N-CH 1700V 325A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 225A, 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Power - Max: 1760W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고7,936

C3D03065E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 650V 11.5A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 11.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 650V
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,144

C3D02060E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 8A TO252-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고65,784

C4D05120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 8.2A TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8.2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 150µA @ 1200V
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고6,576

CSD01060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 2.2A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2.2A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고42,720

C4D30120D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V 21.5A

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 21.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고3,712

C4D15120D

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 24.5A TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 24.5V (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고11,736

CGHV27060MP-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV27060MP

Type: HEMT
Frequency: 0Hz ~ 2.7GHz
For Use With/Related Products: CGHV27060
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고3,078

CGH40035F-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40035

Type: HEMT
Frequency: 0Hz ~ 6GHz
For Use With/Related Products: CGH40035F
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고6,912

CMPA5585025F-TB

Cree/Wolfspeed

EVAL BOARD FOR CMPA5585025F

Type: Amplifier
Frequency: 5.5GHz ~ 8.5GHz
For Use With/Related Products: CMPA5585025F
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고5,742

CGH55030F-TB

Cree/Wolfspeed

RF EVAL HEMT AMPLIFIER

Type: Amplifier
Frequency: 4.5GHz ~ 6GHz
For Use With/Related Products: CGH55030
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고6,804

CGHV14250F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV14250

Type: FET
Frequency: 1.2GHz ~ 1.4GHz
For Use With/Related Products: CGHV14250
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고4,050

CMPA801B025F-TB

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 440208

Frequency: 8.5GHz ~ 11GHz
P1dB: -
Gain: 15.8dB
Noise Figure: -
RF Type: -
Voltage - Supply: 28V
Current - Supply: -
Test Frequency: -
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고5,166

CMPA801B025F

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 440208

Frequency: 8.5GHz ~ 11GHz
P1dB: -
Gain: 24dB
Noise Figure: -
RF Type: -
Voltage - Supply: -
Current - Supply: -
Test Frequency: -
Package / Case: 440208
Supplier Device Package: 440208

패키지: 440208

재고7,596