페이지 2 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTXV1N6621U	Microsemi Corporation	DIODE GEN PURP 400V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	패키지: SQ-MELF, A	재고5,712	400V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
MBRB1045HE3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,104	45V	10A	840mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
VS-31DQ09TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 3.3A C16 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3.3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: C-16, Axial Supplier Device Package: C-16 Operating Temperature - Junction: -40°C ~ 150°C	패키지: C-16, Axial	재고5,760	90V	3.3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 90V	-	Through Hole	C-16, Axial	C-16	-40°C ~ 150°C
SRAS2020 MNG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 20A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,616	20V	20A	570mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
SB560-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AD, Axial	재고6,888	60V	5A	650mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
B350B-E3/52T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 3A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 660mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고3,264	50V	3A	660mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS33HM6G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AB, SMC	재고2,784	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
SK210AHR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고3,104	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
MURS240T3G	ON Semiconductor	DIODE GEN PURP 400V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214AA, SMB	재고1,109,040	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 400V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
US2MA	Fairchild/ON Semiconductor	DIODE GEN PURP 1KV 1.5A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고474,000	1000V	1.5A	1.7V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
MBRD10100TR	SMC Diode Solutions	DIODE SCHOTTKY 100V DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: 250pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고26,466	100V	-	900mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	250pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
S07J-GS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1.5A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고1,951,680	600V	1.5A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
ACEFN103-HF	Comchip Technology	DIODE GEN PURP 600V 1A 1206 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 1206 Operating Temperature - Junction: -65°C ~ 175°C	패키지: 2-SMD, No Lead	재고286,752	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	1206	-65°C ~ 175°C
DSS24U	SMC Diode Solutions	40V, 2A, SOD-123FL, DIODE SCHOTT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고44,304	40 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	80pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
MURS120T3	onsemi	DIODE ULTRA FAST 1A 200V SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -	패키지: -	Request a Quote	200 V	2A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	2 µA @ 200 V	-	Surface Mount	DO-214AA, SMB	SMB	-
SBRD115LT4	onsemi	SCHOTTKY POWER RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
DSC04065	Diodes Incorporated	DIODE SIL CARB 650V 4A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 170 µA @ 650 V Capacitance @ Vr, F: 149pF @ 100mV, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO220AC (Type WX) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	149pF @ 100mV, 1MHz	Through Hole	TO-220-2	TO220AC (Type WX)	-55°C ~ 175°C
S1J_R1_00001	Panjit International Inc.	DIODE GEN PURP 600V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고4,815	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
1SS286TD-E	Renesas Electronics Corporation	RECTIFIER DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MURS460-M3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 2.4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2.4A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	2.4A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
VS-30ETS12S2L-M3	Vishay General Semiconductor - Diodes Division	NEW INPUT DIODES - D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	1200 V	30A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 175°C
SS10100HE_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 100V 1A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 100 V Capacitance @ Vr, F: 100pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고24,855	100 V	1A	800 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 100 V	100pF @ 0V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
NRVUS2DA	onsemi	DIODE GEN PURP 200V 1.5A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	1.5A	1 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CD5711V	Microchip Technology	DIODE SCHOTTKY 50V 15MA DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 15mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	50 V	15mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Surface Mount	Die	Die	-55°C ~ 125°C
JANTXV1N5712UR-1-TR	Microchip Technology	DIODE SCHOTTKY 16V 75MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 16 V Current - Average Rectified (Io): 75mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 nA @ 16 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	16 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
SD0603S020S0R3	KYOCERA AVX	SCHOTTKY DIODES Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 300 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	20 V	300mA	500 mV @ 300 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 20 V	-	Surface Mount	1206 (3216 Metric)	1206	-55°C ~ 125°C
25F20	Solid State Inc.	DIODE GEN PURP 200V 25A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	200 V	25A	1.2 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
SB36AFC_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 60V 3A SMAF-C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 385pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,735	60 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	385pF @ 0V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 150°C

JANTXV1N6621U

Microsemi Corporation

DIODE GEN PURP 400V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

패키지: SQ-MELF, A

재고5,712

400V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 400V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

MBRB1045HE3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,104

45V

10A

840mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

VS-31DQ09TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 3.3A C16

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 3.3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: C-16, Axial
Supplier Device Package: C-16
Operating Temperature - Junction: -40°C ~ 150°C

패키지: C-16, Axial

재고5,760

90V

3.3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 90V

-

Through Hole

C-16, Axial

C-16

-40°C ~ 150°C

SRAS2020 MNG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고7,616

20V

20A

570mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

SB560-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

재고6,888

60V

5A

650mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

B350B-E3/52T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고3,264

50V

3A

660mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 50V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SS33HM6G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AB, SMC

재고2,784

30V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 125°C

SK210AHR3G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고3,104

100V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

MURS240T3G

ON Semiconductor

DIODE GEN PURP 400V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AA, SMB

재고1,109,040

400V

2A

1.3V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

65ns

5µA @ 400V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 175°C

US2MA

Fairchild/ON Semiconductor

DIODE GEN PURP 1KV 1.5A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고474,000

1000V

1.5A

1.7V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 1000V

30pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

MBRD10100TR

SMC Diode Solutions

DIODE SCHOTTKY 100V DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: 250pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고26,466

100V

-

900mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

250pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

-55°C ~ 150°C

S07J-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고1,951,680

600V

1.5A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

10µA @ 600V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

ACEFN103-HF

Comchip Technology

DIODE GEN PURP 600V 1A 1206

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 1206
Operating Temperature - Junction: -65°C ~ 175°C

패키지: 2-SMD, No Lead

재고286,752

600V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 600V

10pF @ 4V, 1MHz

Surface Mount

2-SMD, No Lead

1206

-65°C ~ 175°C

DSS24U

SMC Diode Solutions

40V, 2A, SOD-123FL, DIODE SCHOTT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고44,304

40 V

2A

550 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

80pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

MURS120T3

onsemi

DIODE ULTRA FAST 1A 200V SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -

패키지: -

Request a Quote

200 V

2A

875 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

2 µA @ 200 V

-

Surface Mount

DO-214AA, SMB

SMB

-

SBRD115LT4

onsemi

SCHOTTKY POWER RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

DSC04065

Diodes Incorporated

DIODE SIL CARB 650V 4A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Capacitance @ Vr, F: 149pF @ 100mV, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

650 V

4A

1.7 V @ 4 A

No Recovery Time > 500mA (Io)

0 ns

170 µA @ 650 V

149pF @ 100mV, 1MHz

Through Hole

TO-220-2

TO220AC (Type WX)

-55°C ~ 175°C

S1J_R1_00001

Panjit International Inc.

DIODE GEN PURP 600V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고4,815

600 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 600 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

1SS286TD-E

Renesas Electronics Corporation

RECTIFIER DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

MURS460-M3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 2.4A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2.4A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

600 V

2.4A

1.25 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 600 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 175°C

VS-30ETS12S2L-M3

Vishay General Semiconductor - Diodes Division

NEW INPUT DIODES - D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

1200 V

30A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

100 µA @ 1200 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-40°C ~ 175°C

SS10100HE_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 100V 1A SOD123HE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Capacitance @ Vr, F: 100pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고24,855

100 V

1A

800 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 100 V

100pF @ 0V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

NRVUS2DA

onsemi

DIODE GEN PURP 200V 1.5A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

1.5A

1 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

CD5711V

Microchip Technology

DIODE SCHOTTKY 50V 15MA DIE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 15mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

50 V

15mA

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

-

200 nA @ 50 V

2pF @ 0V, 1MHz

Surface Mount

Die

-55°C ~ 125°C

JANTXV1N5712UR-1-TR

Microchip Technology

DIODE SCHOTTKY 16V 75MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 16 V
Current - Average Rectified (Io): 75mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 nA @ 16 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

16 V

75mA

1 V @ 35 mA

Small Signal =< 200mA (Io), Any Speed

-

150 nA @ 16 V

2pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 150°C

SD0603S020S0R3

KYOCERA AVX

SCHOTTKY DIODES

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 300 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

20 V

300mA

500 mV @ 300 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 20 V

-

Surface Mount

1206 (3216 Metric)

1206

-55°C ~ 125°C

25F20

Solid State Inc.

DIODE GEN PURP 200V 25A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

200 V

25A

1.2 V @ 25 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 150°C

SB36AFC_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 60V 3A SMAF-C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: 385pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고3,735

60 V

3A

750 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

385pF @ 0V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF-C

-55°C ~ 150°C