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부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 23A 8TSON
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 23A (Ta) | 4.5V, 10V | 2V @ 500µA | 76 nC @ 10 V | 3240 pF @ 10 V | +20V, -25V | - | 700mW (Ta), 30W (Tc) | 7.8mOhm @ 11.5A, 10V | 150°C | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-VDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 38A TO247
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 38A (Ta) | 10V | 4V @ 1.69mA | 62 nC @ 10 V | 3650 pF @ 300 V | ±30V | - | 270W (Tc) | 65mOhm @ 19A, 10V | 150°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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패키지: - |
재고129 |
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MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 3.5V @ 900µA | 45 nC @ 10 V | 1800 pF @ 300 V | ±30V | - | 45W (Tc) | 200mOhm @ 8.7A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 400MA S-MINI
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패키지: - |
재고51,261 |
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MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4V, 10V | 2V @ 1mA | 3 nC @ 10 V | 82 pF @ 10 V | +20V, -16V | - | 1.2W (Ta) | 1.9Ohm @ 100mA, 4.5V | 150°C | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
UMOS10 DPAK 80V 6.9MOHM
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패키지: - |
재고17,187 |
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MOSFET (Metal Oxide) | 80 V | 62A (Tc) | 6V, 10V | 3.5V @ 500µA | 39 nC @ 10 V | 2700 pF @ 40 V | ±20V | - | 89W (Tc) | 6.9mOhm @ 31A, 10V | 175°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247-4L 27
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패키지: - |
재고360 |
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SiC (Silicon Carbide Junction Transistor) | 650 V | 58A (Tc) | 18V | 5V @ 3mA | 65 nC @ 18 V | 2288 pF @ 400 V | +25V, -10V | - | 156W (Tc) | 38mOhm @ 29A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
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패키지: - |
재고5,934 |
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MOSFET (Metal Oxide) | 900 V | 2A (Ta) | 10V | 4V @ 200µA | 12 nC @ 10 V | 500 pF @ 25 V | ±30V | - | 80W (Tc) | 5.9Ohm @ 1A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 180MA CST3
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패키지: - |
재고98,961 |
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MOSFET (Metal Oxide) | 20 V | 180mA (Ta) | 1.2V, 4V | 1V @ 1mA | - | 9.5 pF @ 3 V | ±10V | - | 100mW (Ta) | 3Ohm @ 50mA, 4V | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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패키지: - |
재고144 |
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MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 104 nC @ 10 V | 6320 pF @ 50 V | ±20V | - | 54W (Tc) | 4.1mOhm @ 40A, 10V | 175°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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패키지: - |
재고549 |
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MOSFET (Metal Oxide) | 650 V | 22A (Ta) | 10V | 3.5V @ 1.1mA | 50 nC @ 10 V | 2400 pF @ 300 V | ±30V | - | 45W (Tc) | 150mOhm @ 11A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A UF6
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패키지: - |
재고15,210 |
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MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 23.1 nC @ 4.5 V | 1650 pF @ 10 V | +6V, -8V | - | 1W (Ta) | 22.5mOhm @ 6A, 4.5V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 4.4A UF6
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패키지: - |
재고17,595 |
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MOSFET (Metal Oxide) | 30 V | 4.4A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 12.4 nC @ 10 V | 490 pF @ 15 V | ±20V | - | 500mW (Ta) | 25mOhm @ 2A, 10V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DTM
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패키지: - |
재고7,500 |
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MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | 2400 pF @ 300 V | ±30V | - | 180W (Tc) | 150mOhm @ 7.5A, 10V | 150°C | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 72A 8TSON
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패키지: - |
재고39,057 |
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MOSFET (Metal Oxide) | 60 V | 72A (Tc) | 4.5V, 10V | 2.5V @ 300µA | 29 nC @ 10 V | 2770 pF @ 30 V | ±20V | - | 630mW (Ta), 104W (Tc) | 3.5mOhm @ 36A, 10V | 175°C | Surface Mount | 8-TSON Advance (3.1x3.1) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 200MA CST3C
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패키지: - |
재고55,089 |
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MOSFET (Metal Oxide) | 20 V | 200mA (Ta) | 1.5V, 4.5V | 1V @ 1mA | - | 12 pF @ 10 V | ±10V | - | 500mW (Ta) | 2.2Ohm @ 100mA, 4.5V | 150°C | Surface Mount | CST3C | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
P-CH MOSFET -30V, -20/+10V, -4A
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패키지: - |
재고17,841 |
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MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4V, 10V | 2V @ 250µA | 6.2 nC @ 4.5 V | 492 pF @ 10 V | +10V, -20V | - | 1.5W (Ta) | 45mOhm @ 4A, 10V | 150°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 100MA S-MINI
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패키지: - |
재고23,637 |
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MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 1.7V @ 100µA | - | 9.1 pF @ 3 V | ±20V | - | 200mW (Ta) | 12Ohm @ 10mA, 4V | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 3.5A UFM
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패키지: - |
재고10,956 |
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MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | 430 pF @ 15 V | ±20V | - | 1W (Ta) | 69mOhm @ 2A, 10V | 175°C | Surface Mount | UFM | 3-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 160A TO220SM
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패키지: - |
재고14,562 |
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MOSFET (Metal Oxide) | 100 V | 160A (Ta) | 6V, 10V | 3.5V @ 1mA | 184 nC @ 10 V | 11500 pF @ 10 V | ±20V | - | 375W (Tc) | 1.92mOhm @ 80A, 10V | 175°C | Surface Mount | TO-220SM(W) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8DSOP
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 150A (Ta) | 6V, 10V | 3V @ 1mA | 85 nC @ 10 V | 6650 pF @ 10 V | ±20V | - | 960mW (Ta), 170W (Tc) | 0.79mOhm @ 75A, 10V | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q LOW RDSON SS MOS N-CH
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패키지: - |
재고16,320 |
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MOSFET (Metal Oxide) | 60 V | 300mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | 40 pF @ 10 V | ±20V | - | 150mW (Ta) | 1.5Ohm @ 100mA, 10V | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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패키지: - |
재고3 |
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MOSFET (Metal Oxide) | 600 V | 4A (Ta) | 10V | 4V @ 460µA | 16 nC @ 10 V | 560 pF @ 300 V | ±30V | - | 35W (Tc) | 1.7Ohm @ 2A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 3A UFM
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패키지: - |
재고30,759 |
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MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 103mOhm @ 1A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
P-CH MOSFET, -40 V, -7 A, 0.035O
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패키지: - |
재고17,949 |
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MOSFET (Metal Oxide) | 40 V | 7A (Ta) | 4V, 10V | 2V @ 100µA | 24.2 nC @ 10 V | 1020 pF @ 10 V | +10V, -20V | - | 1.5W (Ta) | 35mOhm @ 2.5A, 10V | 150°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
40V UMOS9 S 0.65MOHM SOP-ADV(N)
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 400A (Ta), 150A (Tc) | 6V, 10V | 3V @ 1mA | 98 nC @ 10 V | 9000 pF @ 20 V | ±20V | - | 3W (Ta), 210W (Tc) | 0.74mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 90A DPAK
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패키지: - |
재고28,932 |
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MOSFET (Metal Oxide) | 60 V | 90A (Ta) | 4.5V, 10V | 2.5V @ 500µA | 81 nC @ 10 V | 5400 pF @ 10 V | ±20V | - | 157W (Tc) | 3.3mOhm @ 45A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 32V 5.5A PS-8
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 32 V | 5.5A (Ta) | 4V, 10V | 2V @ 1mA | 34 nC @ 10 V | 1760 pF @ 10 V | ±20V | - | 2.14W (Ta) | 35mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | PS-8 | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 80A DPAK
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패키지: - |
재고16,722 |
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MOSFET (Metal Oxide) | 40 V | 80A (Ta) | 6V, 10V | 3V @ 1mA | 158 nC @ 10 V | 7770 pF @ 10 V | +10V, -20V | - | 100W (Tc) | 5.2mOhm @ 40A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3A VS-8
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2V, 4.5V | 1.2V @ 200µA | 7.5 nC @ 5 V | 590 pF @ 10 V | ±12V | Schottky Diode (Isolated) | 330mW (Ta) | 49mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
TJ20A10M3(STA4,Q
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 20A (Ta) | 10V | 4V @ 1mA | 120 nC @ 10 V | 5500 pF @ 10 V | ±20V | - | 35W (Tc) | 90mOhm @ 10A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |