페이지 3 - Toshiba Semiconductor and Storage 제품 - 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
RN4911-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q TR PNP+NPN BRT Q1BSR= Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz, 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고18,000	100mA	50V	10kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz, 250MHz	100mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN4983FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고12,000	100mA	50V	22kOhms	22kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz, 200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN1701-LF	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	패키지: -	재고19,077	100mA	50V	4.7kOhms	4.7kOhms	30 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
RN2905FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고22,500	100mA	50V	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN4988-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q TR NPN + PNP BRT, Q1B Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고18,000	100mA	50V	22kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz, 200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN1911FE-LF-CT	Toshiba Semiconductor and Storage	NPN X 2 BRT Q1BSR=10KOHM Q1BER=I Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고540	100mA	50V	10kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN4983FE-LF-CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고11,550	100mA	50V	22kOhms	22kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN1908-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고18,000	100mA	50V	22kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN4906FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고23,634	100mA	50V	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz, 250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN1704-LF	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR47KOHM Q1BER47KOH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	패키지: -	재고630	100mA	50V	47kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
RN1703-LF	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR22KOHM Q1BER22KOH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	패키지: -	재고9,000	100mA	50V	22kOhms	22kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
RN1903FE-LF-CT	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR22KOHM Q1BER22KOH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고9,000	100mA	50V	22kOhms	22kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN2904-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고8,670	100mA	50V	47kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN4991FE-LF-CT	Toshiba Semiconductor and Storage	NPN + PNP BRT Q1BSR10KOHM Q1BERI Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	Request a Quote	100mA	50V	10kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz, 200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN4981-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q NPN + PNP BRT, Q1BSR= Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고18,000	100mA	50V	4.7kOhms	4.7kOhms	30 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz, 200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN1911-LF-CT	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR10KOHM Q1BERINF.K Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	Request a Quote	100mA	50V	10kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	100mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN1901-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) NP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고7,875	100mA	50V	4.7kOhms	4.7kOhms	30 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN1911FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고23,940	100mA	50V	10kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN1705-LF	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR2.2KOHM Q1BER47KO Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	패키지: -	재고26,634	100mA	50V	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
RN1708-LF	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR22KOHM Q1BER47KOH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	패키지: -	재고8,259	100mA	50V	22kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
RN1905FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고22,467	100mA	50V	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN46A1-TE85L-F	Toshiba Semiconductor and Storage	PNP + NPN BRT Q1BSR=22KOHM Q1BER Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms, 10kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms, 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	패키지: -	Request a Quote	100mA	50V	22kOhms, 10kOhms	22kOhms, 10kOhms	70 @ 10mA, 5V / 50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz, 250MHz	300mW	Surface Mount	SC-74, SOT-457	SM6
RN1706JE-TE85L-F	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ESV Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	패키지: -	Request a Quote	100mA	50V	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	100mW	Surface Mount	SOT-553	ESV
RN4906FE-LF-CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고12,000	100mA	50V	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN2905-LF-CT	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고8,940	100mA	50V	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN4990FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고12,000	100mA	50V	4.7kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz, 200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN4904-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고9,000	100mA	50V	47kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz, 250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN4984FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고22,980	100mA	50V	47kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz, 200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN1709-LF	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR47KOHM Q1BER22KOH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	패키지: -	재고9,000	100mA	50V	47kOhms	22kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
RN2907FE-LF-CT	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	Request a Quote	100mA	50V	10kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6

RN4911-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNP+NPN BRT Q1BSR=

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz, 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고18,000

100mA

50V

10kOhms

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz, 250MHz

100mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN4983FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고12,000

100mA

50V

22kOhms

70 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz, 200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN1701-LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

패키지: -

재고19,077

100mA

50V

4.7kOhms

30 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

RN2905FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고22,500

100mA

50V

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN4988-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPN + PNP BRT, Q1B

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고18,000

100mA

50V

22kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz, 200MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN1911FE-LF-CT

Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=10KOHM Q1BER=I

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고540

100mA

50V

10kOhms

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN4983FE-LF-CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고11,550

100mA

50V

22kOhms

70 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN1908-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고18,000

100mA

50V

22kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN4906FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고23,634

100mA

50V

4.7kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz, 250MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN1704-LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR47KOHM Q1BER47KOH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

패키지: -

재고630

100mA

50V

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

RN1703-LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR22KOHM Q1BER22KOH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

패키지: -

재고9,000

100mA

50V

22kOhms

70 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

RN1903FE-LF-CT

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR22KOHM Q1BER22KOH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고9,000

100mA

50V

22kOhms

70 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN2904-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고8,670

100mA

50V

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN4991FE-LF-CT

Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR10KOHM Q1BERI

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

Request a Quote

100mA

50V

10kOhms

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz, 200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN4981-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q NPN + PNP BRT, Q1BSR=

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고18,000

100mA

50V

4.7kOhms

30 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz, 200MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN1911-LF-CT

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR10KOHM Q1BERINF.K

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

Request a Quote

100mA

50V

10kOhms

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

100mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN1901-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고7,875

100mA

50V

4.7kOhms

30 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN1911FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고23,940

100mA

50V

10kOhms

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN1705-LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR2.2KOHM Q1BER47KO

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

패키지: -

재고26,634

100mA

50V

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

RN1708-LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR22KOHM Q1BER47KOH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

패키지: -

재고8,259

100mA

50V

22kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

RN1905FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고22,467

100mA

50V

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN46A1-TE85L-F

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR=22KOHM Q1BER

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms, 10kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms, 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

패키지: -

Request a Quote

100mA

50V

22kOhms, 10kOhms

70 @ 10mA, 5V / 50 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz, 250MHz

300mW

Surface Mount

SC-74, SOT-457

SM6

RN1706JE-TE85L-F

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ESV

Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

패키지: -

Request a Quote

100mA

50V

4.7kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

100mW

Surface Mount

SOT-553

ESV

RN4906FE-LF-CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고12,000

100mA

50V

4.7kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN2905-LF-CT

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고8,940

100mA

50V

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN4990FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고12,000

100mA

50V

4.7kOhms

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz, 200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN4904-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고9,000

100mA

50V

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz, 250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN4984FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고22,980

100mA

50V

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz, 200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN1709-LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR47KOHM Q1BER22KOH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

패키지: -

재고9,000

100mA

50V

47kOhms

22kOhms

70 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

RN2907FE-LF-CT

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

Request a Quote

100mA

50V

10kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6