Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

HP8MA2TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 18A/15A 8HSOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
• Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
• Power - Max: 3W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-HSOP

패키지: -

SP8K41HZGTB

Rohm Semiconductor

MOSFET 2N-CH 80V 3.4A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
• Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

SH8ME5TB1

Rohm Semiconductor

MOSFET 100V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V, 91mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, 52nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V, 2100pF @ 50V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

RZM001P02T2CL

Rohm Semiconductor

MOSFET 2P-CH 20V EMT6

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

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UT6MB5TCR

Rohm Semiconductor

MOSFET 40V 5A/3.5A HUML2020L8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc)
• Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-PowerUDFN
• Supplier Device Package: HUML2020L8

패키지: -

HS8MA2TCR1

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/7A 9DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
• Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerWDFN
• Supplier Device Package: DFN3333-9DC

패키지: -

QH8K22TCR

Rohm Semiconductor

MOSFET 2N-CH 40V 6.5A TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
• Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

패키지: -

SP8K33TB1

Rohm Semiconductor

MOSFET 2N-CH 60V 8SOP

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

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BSM300D12P4G101

Rohm Semiconductor

SIC 2N-CH 1200V 291A MODULE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 291A (Tc)
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 4.8V @ 145.6mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
• Power - Max: 925W (Tc)
• Operating Temperature: 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

SH8K26GZ0TB

Rohm Semiconductor

MOSFET 2N-CH 40V 6A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

SH8K52GZETB

Rohm Semiconductor

MOSFET 2N-CH 100V 3A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

SP8K32TB1

Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate, 4V Drive
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

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UT6K30TCR

Rohm Semiconductor

MOSFET 2N-CH 60V 3A HUML2020L8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-PowerUDFN
• Supplier Device Package: HUML2020L8

패키지: -

SH8JE5TB1

Rohm Semiconductor

MOSFET 2P-CH 100V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 91mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

UT6KE5TCR

Rohm Semiconductor

MOSFET 2N-CH 100V 2A HUML2020L8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-PowerUDFN
• Supplier Device Package: HUML2020L8

패키지: -

SP8M41HZGTB

Rohm Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
• Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

SH8M31GZETB

Rohm Semiconductor

MOSFET N/P-CH 60V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 2500pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

HP8K24TB

Rohm Semiconductor

MOSFET 2N-CH 30V 15A/27A 8HSOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)
• Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 2410pF @ 15V
• Power - Max: 3W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-HSOP

패키지: -

UT6JB5TCR

Rohm Semiconductor

MOSFET 2P-CH 40V 3.5A HUML2020L8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-PowerUDFN
• Supplier Device Package: HUML2020L8

패키지: -

SP8K33HZGTB

Rohm Semiconductor

MOSFET 2N-CH 60V 5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

SP8K33FRATB

Rohm Semiconductor

MOSFET 2N-CH 60V 5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

SP8K3FRATB

Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

QH8KB5TCR

Rohm Semiconductor

MOSFET 2N-CH 40V 4.5A TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

패키지: -

SP8M4HZGTB

Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

SP8M4FRATB

Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

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QH8KB6TCR

Rohm Semiconductor

MOSFET 2N-CH 40V 8A TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

패키지: -

SH8MC5TB1

Rohm Semiconductor

MOSFET N/P-CH 60V 6.5A/7A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 7A (Ta)
• Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 10V, 33mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V, 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V, 2630pF @ 30V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

BSM400D12P3G002

Rohm Semiconductor

SIC 2N-CH 1200V 400A MODULE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 5.6V @ 109.2mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 10V
• Power - Max: 1570W (Tc)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

HP8KB6TB1

Rohm Semiconductor

40V 24A, DUAL NCH+NCH, HSOP8, PO

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
• Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
• Power - Max: 3W (Ta), 21W (Tc)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-HSOP

패키지: -

HP8KB7TB1

Rohm Semiconductor

40V 24A, DUAL NCH+NCH, HSOP8, PO

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc)
• Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V
• Power - Max: 3W (Ta), 26W (Tc)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-HSOP

패키지: -