페이지 16 - Microsemi Corporation 제품 - 트랜지스터 - IGBT - 모듈

부품 번호	제조업체	설명	패키지	재고	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
APTGT75A120D1G	Microsemi Corporation	IGBT MOD TRENCH PHASE LEG D1 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 110A Power - Max: 357W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 5345nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고6,736	Half Bridge	1200V	110A	357W	2.1V @ 15V, 75A	4mA	5345nF @ 25V	Standard	No	-	Chassis Mount	D1	D1
APTGT580U60D4G	Microsemi Corporation	IGBT 600V 760A 1600W D4 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 760A Power - Max: 1600W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 37nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: D4 Supplier Device Package: D4	패키지: D4	재고4,224	Single	600V	760A	1600W	1.9V @ 15V, 600A	1mA	37nF @ 25V	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount	D4	D4
APTGT50TA170PG	Microsemi Corporation	IGBT MOD TRNCH TRPL PH LEG SP6-P IGBT Type: Trench Field Stop Configuration: Three Phase Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 70A Power - Max: 310W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 4.4nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	패키지: SP6	재고3,312	Three Phase	1700V	70A	310W	2.4V @ 15V, 50A	250µA	4.4nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTGT50SK170D1G	Microsemi Corporation	IGBT 1700V 70A 310W D1 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 70A Power - Max: 310W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Current - Collector Cutoff (Max): 6mA Input Capacitance (Cies) @ Vce: 4.4nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고3,024	Single	1700V	70A	310W	2.4V @ 15V, 50A	6mA	4.4nF @ 25V	Standard	No	-	Chassis Mount	D1	D1
APTGT50SK120D1G	Microsemi Corporation	IGBT 1200V 75A 270W D1 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Power - Max: 270W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 3.6nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고6,176	Single	1200V	75A	270W	2.1V @ 15V, 50A	5mA	3.6nF @ 25V	Standard	No	-	Chassis Mount	D1	D1
APTGT50DU170TG	Microsemi Corporation	IGBT MOD TRENCH DUAL SOURCE SP4 IGBT Type: Trench Field Stop Configuration: Dual, Common Source Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 75A Power - Max: 312W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 4.4nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고3,888	Dual, Common Source	1700V	75A	312W	2.4V @ 15V, 50A	250µA	4.4nF @ 25V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTGT50DH60TG	Microsemi Corporation	IGBT MOD TRENCH ASYM BRIDGE SP4 IGBT Type: Trench Field Stop Configuration: Asymmetrical Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Power - Max: 176W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 3.15nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고3,520	Asymmetrical Bridge	600V	80A	176W	1.9V @ 15V, 50A	250µA	3.15nF @ 25V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	SP4	SP4
APTGT50DA170D1G	Microsemi Corporation	IGBT 1700V 70A 310W D1 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 70A Power - Max: 310W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Current - Collector Cutoff (Max): 6mA Input Capacitance (Cies) @ Vce: 4.4nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고4,784	Single	1700V	70A	310W	2.4V @ 15V, 50A	6mA	4.4nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	D1	D1
APTGT50DA120D1G	Microsemi Corporation	IGBT 1200V 75A 270W D1 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Power - Max: 270W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 3.6nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고3,872	Single	1200V	75A	270W	2.1V @ 15V, 50A	5mA	3.6nF @ 25V	Standard	No	-	Chassis Mount	D1	D1
APTGT50A60T1G	Microsemi Corporation	IGBT MOD TRENCH PHASE LEG SP1 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Power - Max: 176W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 3.15nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고7,376	Half Bridge	600V	80A	176W	1.9V @ 15V, 50A	250µA	3.15nF @ 25V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	SP1	SP1
APTGT50A170D1G	Microsemi Corporation	IGBT MOD TRENCH PHASE LEG D1 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 70A Power - Max: 310W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Current - Collector Cutoff (Max): 6mA Input Capacitance (Cies) @ Vce: 4.4nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고7,952	Half Bridge	1700V	70A	310W	2.4V @ 15V, 50A	6mA	4.4nF @ 25V	Standard	No	-	Chassis Mount	D1	D1
APTGT50A120TG	Microsemi Corporation	IGBT MOD TRENCH PHASE LEG SP4 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Power - Max: 277W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 3.6nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고3,248	Half Bridge	1200V	75A	277W	2.1V @ 15V, 50A	250µA	3.6nF @ 25V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTGT50A120D1G	Microsemi Corporation	IGBT MOD TRENCH PHASE LEG D1 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Power - Max: 270W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 3.6nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고2,784	Half Bridge	1200V	75A	270W	2.1V @ 15V, 50A	5mA	3.6nF @ 25V	Standard	No	-	Chassis Mount	D1	D1
APTGT450DU60G	Microsemi Corporation	IGBT MOD TRENCH DUAL SOURCE SP6 IGBT Type: Trench Field Stop Configuration: Dual, Common Source Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 550A Power - Max: 1750W Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 450A Current - Collector Cutoff (Max): 500µA Input Capacitance (Cies) @ Vce: 37nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고5,360	Dual, Common Source	600V	550A	1750W	1.8V @ 15V, 450A	500µA	37nF @ 25V	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount	SP6	SP6
APTGT400SK120D3G	Microsemi Corporation	IGBT 1200V 580A 2100W D3 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 580A Power - Max: 2100W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A Current - Collector Cutoff (Max): 750µA Input Capacitance (Cies) @ Vce: 29nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: D-3 Module Supplier Device Package: D3	패키지: D-3 Module	재고5,120	Single	1200V	580A	2100W	2.1V @ 15V, 400A	750µA	29nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	D-3 Module	D3
APTGT400DA120D3G	Microsemi Corporation	IGBT 1200V 580A 2100W D3 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 580A Power - Max: 2100W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A Current - Collector Cutoff (Max): 750µA Input Capacitance (Cies) @ Vce: 29nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: D-3 Module Supplier Device Package: D3	패키지: D-3 Module	재고6,672	Single	1200V	580A	2100W	2.1V @ 15V, 400A	750µA	29nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	D-3 Module	D3
APTGT35SK120D1G	Microsemi Corporation	IGBT 1200V 55A 205W D1 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Power - Max: 205W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 2.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고2,656	Single	1200V	55A	205W	2.1V @ 15V, 35A	5mA	2.5nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	D1	D1
APTGT35H120T1G	Microsemi Corporation	IGBT MOD TRENCH FULL BRIDGE SP1 IGBT Type: Trench Field Stop Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Power - Max: 208W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 2.5nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고3,808	Full Bridge Inverter	1200V	55A	208W	2.1V @ 15V, 35A	250µA	2.5nF @ 25V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTGT35DA120D1G	Microsemi Corporation	IGBT 1200V 55A 205W D1 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Power - Max: 205W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 2.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고5,024	Single	1200V	55A	205W	2.1V @ 15V, 35A	5mA	2.5nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	D1	D1
APTGT35A120D1G	Microsemi Corporation	IGBT MOD TRENCH PHASE LEG D1 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Power - Max: 205W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 2.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고3,504	Half Bridge	1200V	55A	205W	2.1V @ 15V, 35A	5mA	2.5nF @ 25V	Standard	No	-	Chassis Mount	D1	D1
APTGT30SK170D1G	Microsemi Corporation	IGBT 1700V 45A 210W D1 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 45A Power - Max: 210W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 2.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고2,160	Single	1700V	45A	210W	2.4V @ 15V, 30A	3mA	2.5nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	D1	D1
APTGT30H60T3G	Microsemi Corporation	IGBT MOD TRENCH FULL BRIDGE SP3 IGBT Type: Trench Field Stop Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 50A Power - Max: 90W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.6nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고3,376	Full Bridge Inverter	600V	50A	90W	1.9V @ 15V, 30A	250µA	1.6nF @ 25V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	SP3	SP3
APTGT30DSK60T3G	Microsemi Corporation	IGBT MOD TRENCH DL BUCK CHOP SP3 IGBT Type: Trench Field Stop Configuration: Dual Buck Chopper Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 50A Power - Max: 90W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.6nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고7,920	Dual Buck Chopper	600V	50A	90W	1.9V @ 15V, 30A	250µA	1.6nF @ 25V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	SP3	SP3
APTGT30DDA60T3G	Microsemi Corporation	IGBT MOD TRENCH DL BST CHOP SP3 IGBT Type: Trench Field Stop Configuration: Dual Boost Chopper Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 50A Power - Max: 90W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.6nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고7,232	Dual Boost Chopper	600V	50A	90W	1.9V @ 15V, 30A	250µA	1.6nF @ 25V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	SP3	SP3
APTGT30DA170D1G	Microsemi Corporation	IGBT 1700V 45A 210W D1 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 45A Power - Max: 210W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 2.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고6,432	Single	1700V	45A	210W	2.4V @ 15V, 30A	3mA	2.5nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	D1	D1
APTGT30A60T1G	Microsemi Corporation	IGBT MODULE TRENCH PHASE LEG SP1 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 50A Power - Max: 90W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.6nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고6,416	Half Bridge	600V	50A	90W	1.9V @ 15V, 30A	250µA	1.6nF @ 25V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	SP1	SP1
APTGT30A170D1G	Microsemi Corporation	IGBT MODULE TRENCH PHASE LEG D1 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 45A Power - Max: 210W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 2.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고4,384	Half Bridge	1700V	45A	210W	2.4V @ 15V, 30A	3mA	2.5nF @ 25V	Standard	No	-	Chassis Mount	D1	D1
APTGT25SK120D1G	Microsemi Corporation	IGBT 1200V 40A 140W D1 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Power - Max: 140W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 1.8nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고7,504	Single	1200V	40A	140W	2.1V @ 15V, 25A	5mA	1.8nF @ 25V	Standard	No	-	Chassis Mount	D1	D1
APTGT25H120T1G	Microsemi Corporation	IGBT MOD TRENCH FULL BRIDGE SP1 IGBT Type: Trench Field Stop Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Power - Max: 156W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.8nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고7,504	Full Bridge Inverter	1200V	40A	156W	2.1V @ 15V, 25A	250µA	1.8nF @ 25V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTGT25DA120D1G	Microsemi Corporation	IGBT 1200V 40A 140W D1 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Power - Max: 140W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 1.8nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고7,824	Single	1200V	40A	140W	2.1V @ 15V, 25A	5mA	1.8nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	D1	D1

APTGT75A120D1G

Microsemi Corporation

IGBT MOD TRENCH PHASE LEG D1

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 110A
Power - Max: 357W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Current - Collector Cutoff (Max): 4mA
Input Capacitance (Cies) @ Vce: 5345nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고6,736

Half Bridge

1200V

110A

357W

2.1V @ 15V, 75A

4mA

5345nF @ 25V

Standard

No

-

Chassis Mount

D1

APTGT580U60D4G

Microsemi Corporation

IGBT 600V 760A 1600W D4

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 760A
Power - Max: 1600W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 37nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D4
Supplier Device Package: D4

패키지: D4

재고4,224

Single

600V

760A

1600W

1.9V @ 15V, 600A

1mA

37nF @ 25V

Standard

No

-40°C ~ 175°C (TJ)

Chassis Mount

D4

APTGT50TA170PG

Microsemi Corporation

IGBT MOD TRNCH TRPL PH LEG SP6-P

IGBT Type: Trench Field Stop
Configuration: Three Phase
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 70A
Power - Max: 310W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

패키지: SP6

재고3,312

Three Phase

1700V

70A

310W

2.4V @ 15V, 50A

250µA

4.4nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTGT50SK170D1G

Microsemi Corporation

IGBT 1700V 70A 310W D1

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 70A
Power - Max: 310W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Current - Collector Cutoff (Max): 6mA
Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고3,024

Single

1700V

70A

310W

2.4V @ 15V, 50A

6mA

4.4nF @ 25V

Standard

No

-

Chassis Mount

D1

APTGT50SK120D1G

Microsemi Corporation

IGBT 1200V 75A 270W D1

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Power - Max: 270W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고6,176

Single

1200V

75A

270W

2.1V @ 15V, 50A

5mA

3.6nF @ 25V

Standard

No

-

Chassis Mount

D1

APTGT50DU170TG

Microsemi Corporation

IGBT MOD TRENCH DUAL SOURCE SP4

IGBT Type: Trench Field Stop
Configuration: Dual, Common Source
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 75A
Power - Max: 312W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고3,888

Dual, Common Source

1700V

75A

312W

2.4V @ 15V, 50A

250µA

4.4nF @ 25V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTGT50DH60TG

Microsemi Corporation

IGBT MOD TRENCH ASYM BRIDGE SP4

IGBT Type: Trench Field Stop
Configuration: Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Power - Max: 176W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고3,520

Asymmetrical Bridge

600V

80A

176W

1.9V @ 15V, 50A

250µA

3.15nF @ 25V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

SP4

APTGT50DA170D1G

Microsemi Corporation

IGBT 1700V 70A 310W D1

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 70A
Power - Max: 310W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Current - Collector Cutoff (Max): 6mA
Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고4,784

Single

1700V

70A

310W

2.4V @ 15V, 50A

6mA

4.4nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

D1

APTGT50DA120D1G

Microsemi Corporation

IGBT 1200V 75A 270W D1

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Power - Max: 270W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고3,872

Single

1200V

75A

270W

2.1V @ 15V, 50A

5mA

3.6nF @ 25V

Standard

No

-

Chassis Mount

D1

APTGT50A60T1G

Microsemi Corporation

IGBT MOD TRENCH PHASE LEG SP1

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Power - Max: 176W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고7,376

Half Bridge

600V

80A

176W

1.9V @ 15V, 50A

250µA

3.15nF @ 25V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

SP1

APTGT50A170D1G

Microsemi Corporation

IGBT MOD TRENCH PHASE LEG D1

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 70A
Power - Max: 310W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Current - Collector Cutoff (Max): 6mA
Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고7,952

Half Bridge

1700V

70A

310W

2.4V @ 15V, 50A

6mA

4.4nF @ 25V

Standard

No

-

Chassis Mount

D1

APTGT50A120TG

Microsemi Corporation

IGBT MOD TRENCH PHASE LEG SP4

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Power - Max: 277W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고3,248

Half Bridge

1200V

75A

277W

2.1V @ 15V, 50A

250µA

3.6nF @ 25V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTGT50A120D1G

Microsemi Corporation

IGBT MOD TRENCH PHASE LEG D1

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Power - Max: 270W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고2,784

Half Bridge

1200V

75A

270W

2.1V @ 15V, 50A

5mA

3.6nF @ 25V

Standard

No

-

Chassis Mount

D1

APTGT450DU60G

Microsemi Corporation

IGBT MOD TRENCH DUAL SOURCE SP6

IGBT Type: Trench Field Stop
Configuration: Dual, Common Source
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 550A
Power - Max: 1750W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 450A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: 37nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고5,360

Dual, Common Source

600V

550A

1750W

1.8V @ 15V, 450A

500µA

37nF @ 25V

Standard

No

-40°C ~ 175°C (TJ)

Chassis Mount

SP6

APTGT400SK120D3G

Microsemi Corporation

IGBT 1200V 580A 2100W D3

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 580A
Power - Max: 2100W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A
Current - Collector Cutoff (Max): 750µA
Input Capacitance (Cies) @ Vce: 29nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D-3 Module
Supplier Device Package: D3

패키지: D-3 Module

재고5,120

Single

1200V

580A

2100W

2.1V @ 15V, 400A

750µA

29nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

D-3 Module

D3

APTGT400DA120D3G

Microsemi Corporation

IGBT 1200V 580A 2100W D3

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 580A
Power - Max: 2100W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A
Current - Collector Cutoff (Max): 750µA
Input Capacitance (Cies) @ Vce: 29nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D-3 Module
Supplier Device Package: D3

패키지: D-3 Module

재고6,672

Single

1200V

580A

2100W

2.1V @ 15V, 400A

750µA

29nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

D-3 Module

D3

APTGT35SK120D1G

Microsemi Corporation

IGBT 1200V 55A 205W D1

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 55A
Power - Max: 205W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고2,656

Single

1200V

55A

205W

2.1V @ 15V, 35A

5mA

2.5nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

D1

APTGT35H120T1G

Microsemi Corporation

IGBT MOD TRENCH FULL BRIDGE SP1

IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 55A
Power - Max: 208W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고3,808

Full Bridge Inverter

1200V

55A

208W

2.1V @ 15V, 35A

250µA

2.5nF @ 25V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTGT35DA120D1G

Microsemi Corporation

IGBT 1200V 55A 205W D1

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 55A
Power - Max: 205W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고5,024

Single

1200V

55A

205W

2.1V @ 15V, 35A

5mA

2.5nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

D1

APTGT35A120D1G

Microsemi Corporation

IGBT MOD TRENCH PHASE LEG D1

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 55A
Power - Max: 205W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고3,504

Half Bridge

1200V

55A

205W

2.1V @ 15V, 35A

5mA

2.5nF @ 25V

Standard

No

-

Chassis Mount

D1

APTGT30SK170D1G

Microsemi Corporation

IGBT 1700V 45A 210W D1

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 45A
Power - Max: 210W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고2,160

Single

1700V

45A

210W

2.4V @ 15V, 30A

3mA

2.5nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

D1

APTGT30H60T3G

Microsemi Corporation

IGBT MOD TRENCH FULL BRIDGE SP3

IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Power - Max: 90W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고3,376

Full Bridge Inverter

600V

50A

90W

1.9V @ 15V, 30A

250µA

1.6nF @ 25V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

SP3

APTGT30DSK60T3G

Microsemi Corporation

IGBT MOD TRENCH DL BUCK CHOP SP3

IGBT Type: Trench Field Stop
Configuration: Dual Buck Chopper
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Power - Max: 90W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고7,920

Dual Buck Chopper

600V

50A

90W

1.9V @ 15V, 30A

250µA

1.6nF @ 25V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

SP3

APTGT30DDA60T3G

Microsemi Corporation

IGBT MOD TRENCH DL BST CHOP SP3

IGBT Type: Trench Field Stop
Configuration: Dual Boost Chopper
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Power - Max: 90W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고7,232

Dual Boost Chopper

600V

50A

90W

1.9V @ 15V, 30A

250µA

1.6nF @ 25V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

SP3

APTGT30DA170D1G

Microsemi Corporation

IGBT 1700V 45A 210W D1

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 45A
Power - Max: 210W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고6,432

Single

1700V

45A

210W

2.4V @ 15V, 30A

3mA

2.5nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

D1

APTGT30A60T1G

Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG SP1

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Power - Max: 90W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고6,416

Half Bridge

600V

50A

90W

1.9V @ 15V, 30A

250µA

1.6nF @ 25V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

SP1

APTGT30A170D1G

Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D1

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 45A
Power - Max: 210W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고4,384

Half Bridge

1700V

45A

210W

2.4V @ 15V, 30A

3mA

2.5nF @ 25V

Standard

No

-

Chassis Mount

D1

APTGT25SK120D1G

Microsemi Corporation

IGBT 1200V 40A 140W D1

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Power - Max: 140W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 1.8nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고7,504

Single

1200V

40A

140W

2.1V @ 15V, 25A

5mA

1.8nF @ 25V

Standard

No

-

Chassis Mount

D1

APTGT25H120T1G

Microsemi Corporation

IGBT MOD TRENCH FULL BRIDGE SP1

IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Power - Max: 156W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.8nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고7,504

Full Bridge Inverter

1200V

40A

156W

2.1V @ 15V, 25A

250µA

1.8nF @ 25V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTGT25DA120D1G

Microsemi Corporation

IGBT 1200V 40A 140W D1

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Power - Max: 140W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 1.8nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고7,824

Single

1200V

40A

140W

2.1V @ 15V, 25A

5mA

1.8nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

D1