|
|
EPC |
TRANS GAN 40V 4.4A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 500mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고7,360 |
|
|
|
EPC |
TRANS GAN 150V 12A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고7,568 |
|
|
|
EPC |
TRANS GAN 40V 33A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고5,776 |
|
|
|
EPC |
TRANS GAN 40V 31A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고6,672 |
|
|
|
EPC |
TRANS GAN 200V 8.5A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고2,288 |
|
|
|
EPC |
TRANS GAN 100V 11A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고6,448 |
|
|
|
EPC |
TRANS GAN 200V 5A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 100V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (4-Solder Bar)
- Package / Case: Die
|
패키지: Die |
재고5,504 |
|
|
|
EPC |
TRANS GAN 30V 60A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고19,944 |
|
|
|
EPC |
TRANS GAN 200V BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고2,672 |
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|
|
EPC |
TRANS GAN 100V 18A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고6,704 |
|
|
|
EPC |
TRANS GAN 200V BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 100V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고14,520 |
|
|
|
EPC |
TRANS GAN 60V 90A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 30V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 31A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고72,738 |
|
|
|
EPC |
TRANS GAN 100V BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고198,594 |
|
|
|
EPC |
TRANS GAN 40V 10A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 20V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (5-Solder Bar)
- Package / Case: Die
|
패키지: Die |
재고269,130 |
|
|
|
EPC |
TRANS GAN 100V BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고43,776 |
|
|
|
EPC |
TRANS GAN 200V 22A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (7-Solder Bar)
- Package / Case: Die
|
패키지: Die |
재고109,092 |
|
|
|
EPC |
TRANS GAN 100V 2.7A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.48nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고52,914 |
|
|
|
EPC |
TRANS GAN 200V 8.5A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고279,426 |
|
|
|
EPC |
TRANS GAN 200V 5A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (4-Solder Bar)
- Package / Case: Die
|
패키지: Die |
재고196,962 |
|
|
|
EPC |
TRANS GAN 100V 1A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 1A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고5,327,856 |
|
|
|
EPC |
TRANS GAN 2N-CH 100V BUMPED DIE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 23A
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
패키지: Die |
재고4,224 |
|
|
|
EPC |
TRANS GAN 2N-CH 60V BUMPED DIE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 23A
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
패키지: Die |
재고7,440 |
|
|
|
EPC |
TRANS GAN 2N-CH 60V BUMPED DIE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
- Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
패키지: Die |
재고4,704 |
|
|
|
EPC |
TRANS GAN 3N-CH 100V BUMPED DIE
- FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
- Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-VFBGA
- Supplier Device Package: 9-BGA (1.35x1.35)
|
패키지: 9-VFBGA |
재고4,496 |
|
|
|
EPC |
MOSFET ARRAY 2N-CH 30V DIE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Tj), 38A (Tj)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 15V, 15nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V, 1700pF @ 15V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
패키지: Die |
재고51,732 |
|
|
|
EPC |
TRANS GAN ASYMMETRICAL HALF BRID
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
패키지: Die |
재고56,010 |
|
|
|
EPC |
TRANS GAN 2N-CH 120V BUMPED DIE
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 120V
- Current - Continuous Drain (Id) @ 25°C: 3.4A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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패키지: Die |
재고221,688 |
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EPC |
MOSFET 3N-CH 100V 9BGA
- FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
- Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-VFBGA
- Supplier Device Package: 9-BGA (1.35x1.35)
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패키지: 9-VFBGA |
재고201,390 |
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EPC |
MOSFET 3N-CH 60V/100V 9BGA
- FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V, 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-VFBGA
- Supplier Device Package: 9-BGA (1.35x1.35)
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패키지: 9-VFBGA |
재고207,576 |
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EPC |
200 V GAN IC FET DRIVER
- Output Configuration: Low Side
- Applications: DC-DC Converters
- Interface: On/Off
- Load Type: Inductive
- Technology: MOSFET (Metal Oxide)
- Rds On (Typ): 32 mOhm
- Current - Output / Channel: 10A
- Current - Peak Output: 40A
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: -
- Fault Protection: -
- Mounting Type: Surface Mount
- Package / Case: 10-XFBGA
- Supplier Device Package: 10-BGA (2.9x1.1)
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패키지: 10-XFBGA |
재고3,024 |
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